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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1 EP3621113A1
HIGH-SPEED LIGHT SENSING APPARATUS
Publication/Patent Number: EP3621113A1 Publication Date: 2020-03-11 Application Number: 19203472.6 Filing Date: 2016-11-04 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146 Abstract: An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal. An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches ...More Less
2 US2020132927A1
WAVEGUIDE STRUCTURE AND OPTOELECTRONIC DEVICE COMPRISING THE SAME
Publication/Patent Number: US2020132927A1 Publication Date: 2020-04-30 Application Number: 16/663,266 Filing Date: 2019-10-24 Inventor: Cheng, Szu-lin   Chen, Chien-yu   Liu, Han-din   Lin, Chia-peng   Lin, Chung-chih   Na, Yun-chung   Lin, Pin-tso   Wu, Tsung-ting   Liu, Yu-hsuan   Chu, Kuan-chen   Assignee: ARTILUX, INC.   IPC: G02B6/10 Abstract: A waveguide structure includes a first surface having a first width, a second surface having a second width, the second surface being opposite to the first surface, and a sidewall surface connecting the first surface and the second surface. The first width is greater than the second width. A waveguide structure includes a first surface having a first width, a second surface having a second width, the second surface being opposite to the first surface, and a sidewall surface connecting the first surface and the second surface. The first width is greater than the ...More Less
3 US10707260B2
Circuit for operating a multi-gate VIS/IR photodiode
Publication/Patent Number: US10707260B2 Publication Date: 2020-07-07 Application Number: 15/952,088 Filing Date: 2018-04-12 Inventor: Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Liu, Han-din   Chen, Hui-wen   Liang, Che-fu   Lyu, Yuan-fu   Chen, Chien-lung   Lin, Chung-chih   Chu, Kuan-chen   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit. A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the ...More Less
4 EP3404717B1
HIGH-SPEED LIGHT SENSING APPARATUS
Publication/Patent Number: EP3404717B1 Publication Date: 2020-01-08 Application Number: 18176031.5 Filing Date: 2016-11-04 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146
5 US2020194490A1
HIGH EFFICIENCY WIDE SPECTRUM SENSOR
Publication/Patent Number: US2020194490A1 Publication Date: 2020-06-18 Application Number: 16/801,946 Filing Date: 2020-02-26 Inventor: Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Liu, Han-din   Chen, Hui-wen   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and silicon; and forming, over the graded material layer, a second material layer comprising a second alloy of germanium and silicon having a second germanium composition. The first germanium composition is lower than the second germanium composition and a germanium composition of the graded material layer is between the first germanium composition and the second germanium composition and varies along a direction perpendicular to the substrate. A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and ...More Less
6 EP3667727A1
PHOTO-DETECTING APPARATUS WITH MULTI-RESET MECHANISM
Publication/Patent Number: EP3667727A1 Publication Date: 2020-06-17 Application Number: 19215415.1 Filing Date: 2019-12-11 Inventor: Na, Yun-chung   Liang, Che-fu   Chen, Chien-lung   Lyu, Yuan-fu   Lu, Yen-cheng   Assignee: Artilux Inc.   IPC: H01L27/144 Abstract: A photo-detecting apparatus (100A) includes an optical-to-electric converter (170), having a first output terminal, configured to convert an incident light (IL) to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal (120A) and a second channel terminal, wherein the second channel terminal of the cascode transistor is coupled to the first output terminal of the optical-to-electric converter (170); and a reset transistor (141A), having a control terminal, a first channel terminal and a second channel terminal, wherein the first channel terminal of the reset transistor (141A) is coupled to a supply voltage (VDDR) and the second channel terminal of the reset transistor (141A) is coupled to the first channel terminal of the cascode transistor. A photo-detecting apparatus (100A) includes an optical-to-electric converter (170), having a first output terminal, configured to convert an incident light (IL) to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal (120A) and a second ...More Less
7 EP3363050B1
HIGH EFFICIENCY WIDE SPECTRUM SENSOR
Publication/Patent Number: EP3363050B1 Publication Date: 2020-07-08 Application Number: 16828622.7 Filing Date: 2016-07-22 Inventor: Liu, Han-din   Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Chen, Hui-wen   Assignee: Artilux Inc.   IPC: H01L27/146
8 US10622390B2
High-speed light sensing apparatus II
Publication/Patent Number: US10622390B2 Publication Date: 2020-04-14 Application Number: 15/908,447 Filing Date: 2018-02-28 Inventor: Na, Yun-chung   Liang, Che-fu   Cheng, Szu-lin   Chen, Shu-lu   Chu, Kuan-chen   Lin, Chung-chih   Liu, Han-din   Assignee: Artilux, Inc.   IPC: G01C3/08 Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal. An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a ...More Less
9 EP3590136A1
HIGH-SPEED LIGHT SENSING APPARATUS II
Publication/Patent Number: EP3590136A1 Publication Date: 2020-01-08 Application Number: 18761724.6 Filing Date: 2018-02-28 Inventor: Na, Yun-chung   Liang, Che-fu   Cheng, Szu-lin   Chen, Shu-lu   Chu, Kuan-chen   Lin, Chung-chih   Liu, Han-din   Assignee: Artilux Inc.   IPC: H01L27/146
10 US2020217715A1
PHOTODETECTING DEVICE FOR DETECTING DIFFERENT WAVELENGTHS
Publication/Patent Number: US2020217715A1 Publication Date: 2020-07-09 Application Number: 16/734,918 Filing Date: 2020-01-06 Inventor: Lu, Yen-cheng   Na, Yun-chung   Chen, Shu-lu   Chen, Chien-yu   Cheng, Szu-lin   Lin, Chung-chih   Liu, Yu-hsuan   Assignee: ARTILUX, INC.   IPC: G01J1/44 Abstract: A photodetecting device for detecting different wavelengths includes a first photodetecting component including a substrate and a second photodetecting component including second absorption region. The substrate includes a first absorption region configured to absorb photons having a first peak wavelength and to generate first photo-carriers. The second absorption region is supported by the substrate and configured to absorb photons having a second peak wavelength and to generate second photo-carriers. The first absorption region and the second absorption region are overlapped along a vertical direction. A photodetecting device for detecting different wavelengths includes a first photodetecting component including a substrate and a second photodetecting component including second absorption region. The substrate includes a first absorption region configured to absorb photons ...More Less
11 US10564718B2
Eye gesture tracking
Publication/Patent Number: US10564718B2 Publication Date: 2020-02-18 Application Number: 16/118,312 Filing Date: 2018-08-30 Inventor: Na, Yun-chung   Chen, Chien-lung   Liu, Han-din   Chen, Shu-lu   Assignee: Artilux, Inc.   IPC: G06F3/00 Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from an eye and determining a depth map of the eye based on phase differences between the electrical signal generated by the photodetector and a reference signal. Further, the method includes determining gaze information that represents a gaze of the eye based on the depth map and providing output data representing the gaze information. Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from ...More Less
12 US10656253B2
High-speed light sensing apparatus
Publication/Patent Number: US10656253B2 Publication Date: 2020-05-19 Application Number: 16/430,019 Filing Date: 2019-06-03 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal. An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches ...More Less
13 EP3667743A3
SEMICONDUCTOR DEVICE WITH LOW DARK NOISE
Publication/Patent Number: EP3667743A3 Publication Date: 2020-06-24 Application Number: 19215416.9 Filing Date: 2019-12-11 Inventor: Na, Yun-chung   Lu, Yen-cheng   Yang, Ming-jay   Cheng, Szu-lin   Assignee: Artilux Inc.   IPC: H01L31/103 Abstract: A semiconductor device with low dark noise is provided. The semiconductor device includes a photo-detecting device, including an absorption layer (310, 610) comprising germanium; a first switch (330, 630) comprising a first doped region (331, 631) in the absorption layer and of a first conductivity type; a second switch (340, 640) comprising a second doped region (341, 641) in the absorption layer and physically separated from the first doped region (331, 631), wherein the second doped region (341, 641) is of a second conductivity type the same as the first conductivity type; a first counter-doped region (350, 650) adjacent to the first doped region and of a third conductivity type different from the first conductivity type; and a second counter-doped region (351, 651) and adjacent to the second doped region (341, 641) and of a fourth conductivity type different from the second conductivity type. A semiconductor device with low dark noise is provided. The semiconductor device includes a photo-detecting device, including an absorption layer (310, 610) comprising germanium; a first switch (330, 630) comprising a first doped region (331, 631) in the absorption layer and of ...More Less
14 US2020194480A1
SEMICONDUCTOR DEVICE WITH LOW DARK NOISE
Publication/Patent Number: US2020194480A1 Publication Date: 2020-06-18 Application Number: 16/709,848 Filing Date: 2019-12-10 Inventor: Na, Yun-chung   Lu, Yen-cheng   Yang, Ming-jay   Cheng, Szu-lin   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: A semiconductor device includes a germanium region, a doped region in the germanium region, wherein the doped region is of a first conductivity type; and a counter-doped region in the germanium region and adjacent to the doped region, wherein the counter-doped region is of a second conductivity type different from the first conductivity type. A semiconductor device includes a germanium region, a doped region in the germanium region, wherein the doped region is of a first conductivity type; and a counter-doped region in the germanium region and adjacent to the doped region, wherein the counter-doped region is of a ...More Less