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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
DE10338017B4
Verfahren zum Füllen eines Kontaktdurchgangs einer Bitleitung
Title (English): The method of filling the contact Channel of a track Pipeline
Publication/Patent Number: DE10338017B4 Publication Date: 2006-09-14 Application Number: 10338017 Filing Date: 2003-08-19 Inventor: Huang, Tse-yao   Chen, Yi-nan   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: H01L21/60 Abstract: Ein Verfahren zum Füllen eines Kontaktdurchgangs einer Bitleitung. Das Verfahren beinhaltet Bereitstellen eines Substrats
2
DE102004036391A1
Diaphragm plate for optical lithography systems comprises an opaque plate with a central pole opening
Publication/Patent Number: DE102004036391A1 Publication Date: 2005-10-13 Application Number: 102004036391 Filing Date: 2004-07-27 Inventor: Wu, Yuan-hsun   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: G03F7/20 Abstract: Diaphragm plate (10) for optical lithography systems comprises an opaque plate with a central pole opening (14)
3
DE102004009292B3
Verfahren zum Bilden von Kontaktlöchern
Title (English): The method of establishing contact hole
Publication/Patent Number: DE102004009292B3 Publication Date: 2005-06-02 Application Number: 102004009292 Filing Date: 2004-02-26 Inventor: Huang, Tse-yao   Chen, Yi-nan   Mao, Hui-min   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: H01L21/28 Abstract: Ein Verfahren zum Bilden von Kontaktlöchern. Ein Substrat wird bereitgestellt
4
DE102004027067A1
Method for manufacturing gate structure for use in semiconductor device
Publication/Patent Number: DE102004027067A1 Publication Date: 2005-06-16 Application Number: 102004027067 Filing Date: 2004-06-03 Inventor: Wu, Chang-rong   Chen, Yi-nan   Ho, Tzu-en   Wu, Kuo-chien   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: H01L21/28 Abstract: The present invention provides a method for manufacturing a stacked-gate structure in a semiconductor device. The method includes the steps of sequentially forming a gate dielectric layer
5
DE10344351A1
Verfahren zum anisotropen Ätzen von Silizium
Title (English): The claimant states that:
Publication/Patent Number: DE10344351A1 Publication Date: 2005-05-19 Application Number: 10344351 Filing Date: 2003-09-24 Inventor: Schupke, Kristin   Huang, Kevin   Assignee: Infineon Technologies AG   NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: C23F1/24 Abstract: Die vorliegende Erfindung stellt ein Verfahren zum anisotropen Ätzen von Silizium bereit unter Verwendung einer Lösung
6
DE102004032170A1
Circuit structure
Publication/Patent Number: DE102004032170A1 Publication Date: 2005-09-29 Application Number: 102004032170 Filing Date: 2004-07-02 Inventor: Kuehn, Olaf   Lin, Chung-min   Kirbach, Uwe   Assignee: Infineon Technologies AG   NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: H01L21/768 Abstract: A process for producing a circuit structure on a substrate (1)
7
DE10300523A1
Forming bottle-shaped trench for capacitor of dynamic random access memory involves forming pad layer and hard mask layer on semiconductor substrate
Publication/Patent Number: DE10300523A1 Publication Date: 2004-03-25 Application Number: 10300523 Filing Date: 2003-01-09 Inventor: Huang, Tung-wang   Wu, Chang-rong   Liao, Chien-mao   Ho, Hsin-jung   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: H01L21/308 Abstract: A bottle-shaped trench is formed by providing a semiconductor substrate (401) on the surface of which a pad layer (402) and a hard mask layer are sequentially formed
8
DE10300523B4
Forming bottle-shaped trench for capacitor of dynamic random access memory involves forming pad layer and hard mask layer on semiconductor substrate
Publication/Patent Number: DE10300523B4 Publication Date: 2004-09-23 Application Number: 10300523 Filing Date: 2003-01-09 Inventor: Huang, Tung-wang   Wu, Chang-rong   Liao, Chien-mao   Ho, Hsin-jung   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: H01L21/308 Abstract: A bottle-shaped trench is formed by providing a semiconductor substrate (401) on the surface of which a pad layer (402) and a hard mask layer are sequentially formed
9
DE10323728A1
Verfahren zur Verbesserung der Gleichmäßigkeit einer Fotolackschicht
Title (English): The method of improving uniformity of varnish coating.
Publication/Patent Number: DE10323728A1 Publication Date: 2004-08-26 Application Number: 10323728 Filing Date: 2003-05-26 Inventor: Chen, Meng Hung   Wu, Hsin Ling   Wu, Hung Mo   Lee, Chung Yuan   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: G03F7/26 Abstract: Ein Verfahren zur Verbesserung der Gleichmäßigkeit einer Fotolackschicht und zur Herstellung einer unteren Elektrode eines Grabenkondensators. Zuerst wird ein Substrat mit einer Vielzahl von Gräben bereitgestellt. Dann wird eine Schutzfotolackschicht auf dem Substrat gebildet
10
DE10338017A1
Verfahren zum Füllen eines Kontaktdurchgangs einer Bitleitung
Title (English): The method of filling the contact Channel of a track Pipeline
Publication/Patent Number: DE10338017A1 Publication Date: 2004-11-11 Application Number: 10338017 Filing Date: 2003-08-19 Inventor: Huang, Tse-yao   Chen, Yi-nan   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: H01L21/60 Abstract: Ein Verfahren zum Füllen eines Kontaktdurchgangs einer Bitleitung. Das Verfahren beinhaltet Bereitstellen eines Substrats
11
DE10231451A1
Vorrichtung und Verfahren zur Kontaktlochbelichtung
Title (English): Contact exposure device and process
Publication/Patent Number: DE10231451A1 Publication Date: 2003-07-10 Application Number: 10231451 Filing Date: 2002-07-11 Inventor: Wu, Yuan-hsun   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: G03F7/20 Abstract: Es werden eine Vorrichtung und ein Verfahren für Kontaktlochbelichtung angegeben. Zunächst wird eine Belichtungsvorrichtung mit einer Lichtquelle und einer Linse
12
DE10228845A1
Pattern design method for semiconductor processing
Publication/Patent Number: DE10228845A1 Publication Date: 2003-04-03 Application Number: 10228845 Filing Date: 2002-06-27 Inventor: Wu, Yuan-hsun   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: G03F1/00 Abstract: The exposure wavelength of a light source is determined. A minimum resolution line width is calculated using signal of light source