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1
US2020027865A1
MICRO LED DISPLAY AND MANUFACTURING METHOD THEREOF
Publication/Patent Number: US2020027865A1 Publication Date: 2020-01-23 Application Number: 16/120,835 Filing Date: 2018-09-04 Inventor: Fan, Regis   Ko, Pei-wen   Fan, Chun-sheng   Assignee: Omnivision semiconductor shanghai co ltd   IPC: H01L25/16 Abstract: A micro LED display and a manufacturing method thereof are disclosed. A plurality of electrode structures is formed on a first surface of a substrate, and a plurality of circuit structure are formed in the substrate, where the circuit structures are electrically connected to the electrode structures. An LED functional layer is formed on the substrate, and includes a plurality of mutually isolated LED functional structures, where the LED functional structures are corresponding and electrically connected to the electrode structures. An electrode layer covers the LED functional layer and is electrically connected to the LED functional structures. Micro lenses are formed on the electrode layer and corresponding to the LED functional structures. Therefore, all the LED functional structures can be wholly used as a light-emitting region of a pixel, improving light emission efficiency of the micro LED display.
2
US2020266316A1
IMAGE SENSOR
Publication/Patent Number: US2020266316A1 Publication Date: 2020-08-20 Application Number: 16/560,239 Filing Date: 2019-09-04 Inventor: Fan, Chun-sheng   Assignee: Omnivision semiconductor shanghai co ltd   IPC: H01L31/12 Abstract: An image sensor is disclosed which includes a substrate, a pixel array, a peripheral circuit, an SPAD detector and a VCSEL integrated in the substrate. The peripheral circuit is configured to process an electrical signal obtained from photoelectric conversion in the pixel array, the SPAD detector is configured to convert a first external optical pulse into an electrical pulse to provide a clock signal to the peripheral circuit. The VCSEL is driven by the peripheral circuit and configured to output a second optical pulse. The number of electrical connection terminals in the image sensor is reduced to only two, which is favorable to the miniaturization of the image sensor and simplifies the design of the mating device while allowing the inputting of a first optical pulse and outputting of a second optical pulse. By using these optical signals, extremely high speed and high bandwidth data transmission can be achieved.
3
US10848648B2
Image sensor
Publication/Patent Number: US10848648B2 Publication Date: 2020-11-24 Application Number: 16/560,239 Filing Date: 2019-09-04 Inventor: Fan, Chun-sheng   Assignee: Omnivision semiconductor shanghai co ltd   IPC: H04N5/225 Abstract: An image sensor is disclosed which includes a substrate, a pixel array, a peripheral circuit, an SPAD detector and a VCSEL integrated in the substrate. The peripheral circuit is configured to process an electrical signal obtained from photoelectric conversion in the pixel array, the SPAD detector is configured to convert a first external optical pulse into an electrical pulse to provide a clock signal to the peripheral circuit. The VCSEL is driven by the peripheral circuit and configured to output a second optical pulse. The number of electrical connection terminals in the image sensor is reduced to only two, which is favorable to the miniaturization of the image sensor and simplifies the design of the mating device while allowing the inputting of a first optical pulse and outputting of a second optical pulse. By using these optical signals, extremely high speed and high bandwidth data transmission can be achieved.
4
US10607974B2
Micro LED display and manufacturing method thereof
Publication/Patent Number: US10607974B2 Publication Date: 2020-03-31 Application Number: 16/120,835 Filing Date: 2018-09-04 Inventor: Fan, Regis   Ko, Pei-wen   Fan, Chun-sheng   Assignee: Omnivision semiconductor shanghai co ltd   IPC: H01L25/16 Abstract: A micro LED display and a manufacturing method thereof are disclosed. A plurality of electrode structures is formed on a first surface of a substrate, and a plurality of circuit structure are formed in the substrate, where the circuit structures are electrically connected to the electrode structures. An LED functional layer is formed on the substrate, and includes a plurality of mutually isolated LED functional structures, where the LED functional structures are corresponding and electrically connected to the electrode structures. An electrode layer covers the LED functional layer and is electrically connected to the LED functional structures. Micro lenses are formed on the electrode layer and corresponding to the LED functional structures. Therefore, all the LED functional structures can be wholly used as a light-emitting region of a pixel, improving light emission efficiency of the micro LED display.
5
US202027865A1
MICRO LED DISPLAY AND MANUFACTURING METHOD THEREOF
Publication/Patent Number: US202027865A1 Publication Date: 2020-01-23 Application Number: 20/181,612 Filing Date: 2018-09-04 Inventor: Fan, Regis   Fan, Chun-sheng   Ko, Pei-wen   Assignee: Omnivision semiconductor shanghai co ltd   IPC: H01L33/62 Abstract: A micro LED display and a manufacturing method thereof are disclosed. A plurality of electrode structures is formed on a first surface of a substrate, and a plurality of circuit structure are formed in the substrate, where the circuit structures are electrically connected to the electrode structures. An LED functional layer is formed on the substrate, and includes a plurality of mutually isolated LED functional structures, where the LED functional structures are corresponding and electrically connected to the electrode structures. An electrode layer covers the LED functional layer and is electrically connected to the LED functional structures. Micro lenses are formed on the electrode layer and corresponding to the LED functional structures. Therefore, all the LED functional structures can be wholly used as a light-emitting region of a pixel, improving light emission efficiency of the micro LED display.