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1
US10886407B2
Semiconductor device, manufacturing method for semiconductor device, and electronic apparatus
Publication/Patent Number: US10886407B2 Publication Date: 2021-01-05 Application Number: 16/466,251 Filing Date: 2017-11-17 Inventor: Yanagisawa, Yuki   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L29/78 Abstract: A semiconductor device formed by using an SOI substrate including a substrate, a BOX layer formed on the substrate, and an SOI layer formed on the BOX layer, in which a part of or all of the BOX layer at least in a part of the BOX layer arranged in a non-active area adjacent to an active area has been removed, and the BOX layer in a portion where the SOI layer forming the active area is arranged is configured to remain deformation used to apply stress to the SOI layer.
2
US10887540B2
Solid-state imaging apparatus, method for driving solid-state imaging apparatus, and electronic equipment
Publication/Patent Number: US10887540B2 Publication Date: 2021-01-05 Application Number: 16/325,277 Filing Date: 2017-08-08 Inventor: Taura, Tadayuki   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/378 Abstract: The present disclosure relates to a solid-state imaging apparatus, a method for driving the solid-state imaging apparatus, and electronic equipment for improving the determination speed of comparators and allowing the comparators to operate faster. A differential input circuit operates on a first power supply voltage and outputs a signal when a voltage of a pixel signal is higher than a voltage of a reference signal. A voltage conversion circuit converts the output signal from the differential input circuit into a signal corresponding to a second power supply voltage. A positive feedback circuit accelerates a transition rate at which a comparison result signal of a comparison in voltage between the pixel signal and the reference signal is inverted. Multiple time code transfer sections each include a shift register that transfer a time code. The present disclosure can be applied, for example, to an imaging apparatus including A/D converters disposed in pixels.
3
US10885403B2
Image processing device, imaging device, and image processing method
Publication/Patent Number: US10885403B2 Publication Date: 2021-01-05 Application Number: 16/246,340 Filing Date: 2019-01-11 Inventor: Hoshino, Kazuhiro   Assignee: Sony Semiconductor Solutions Corporation   IPC: G06K9/00 Abstract: Visibility of a license plate and color reproducibility of a vehicle body are improved in a monitoring camera. A vehicle body area detection unit detects a vehicle body area of a vehicle from an image signal. A license plate area detection unit detects a license plate area of the vehicle from the image signal. A vehicle body area image processing unit performs processing of the image signal corresponding to the detected vehicle body area. A license plate area image processing unit performs processing different from the processing of the image signal corresponding to the vehicle body area on the image signal corresponding to the detected license plate area. A synthesis unit synthesizes the processed image signal corresponding to the vehicle body area and the processed image signal corresponding to the license plate area.
4
US10887538B2
Solid-state imaging device, control method thereof, and electronic apparatus
Publication/Patent Number: US10887538B2 Publication Date: 2021-01-05 Application Number: 16/340,925 Filing Date: 2017-10-17 Inventor: Zhu, Hongbo   Sato, Mamoru   Kato, Akihiko   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/3745 Abstract: An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.
5
US2021005688A1
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
Publication/Patent Number: US2021005688A1 Publication Date: 2021-01-07 Application Number: 16/968,824 Filing Date: 2019-01-24 Inventor: Shinya, Kimihiro   Yamamoto, Atsushi   Maeda, Kensaku   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/32 Abstract: In a display device including a light emitting element, light extraction efficiency and a luminance viewing angle characteristic are improved. The display device includes a light emitting element, a condenser lens, and a scattering lens. The light emitting element is an element that emits light. The condenser lens is a lens that condenses the light emitted from the light emitting element. The scattering lens is a lens that scatters the light condensed by the condenser lens. Combination of the condenser lens and the scattering lens improves the light extraction efficiency and the luminance viewing angle characteristic.
6
US2021005137A1
PIXEL CIRCUIT, DISPLAY DEVICE, DRIVING METHOD OF PIXEL CIRCUIT, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2021005137A1 Publication Date: 2021-01-07 Application Number: 16/969,720 Filing Date: 2019-01-25 Inventor: Toyomura, Naobumi   Assignee: Sony Semiconductor Solutions Corporation   IPC: G09G3/3233 Abstract: To provide a pixel circuit capable of suppressing a decrease in luminance due to leakage of a transistor without increasing the number of elements or with a minimum increase in the number of elements even if the number is increased. A pixel circuit is provided including a light-emitting element, a drive transistor configured to supply a current to the light-emitting element, a first reset transistor configured to set a potential of an anode of the light-emitting element to a predetermined potential, a first write transistor configured to control writing of a signal voltage at a gate node of the drive transistor, a holding capacitance having one end connected to the gate node of the drive transistor and configured to hold a threshold voltage of the drive transistor, and a second write transistor connected in series between the gate node of the drive transistor and the first write transistor.
7
US2021006255A1
PHASE-LOCKED LOOP
Publication/Patent Number: US2021006255A1 Publication Date: 2021-01-07 Application Number: 16/976,670 Filing Date: 2019-02-15 Inventor: Arisaka, Naoya   Fujiwara, Tetsuya   Etou, Shinichirou   Assignee: Sony Semiconductor Solutions Corporation   IPC: H03L7/089 Abstract: The present technology relates to a phase-locked loop that allows a reduction in power consumption. A SAR-ADC that includes two capacitors and outputs a result of comparison between voltages generated from the two capacitors, a current source that charges the two capacitors with current, a first switch that is disposed between one of the two capacitors and the current source and is provided with a phase difference between a first clock of a reference frequency and a second clock having a higher frequency than the first clock, and a second switch that is disposed between another of the two capacitors and the current source and is provided with the second clock are included. The present disclosure can be applied, for example, to a wireless communication device.
8
US2021006212A1
AMPLIFICATION CIRCUIT, IMAGING DEVICE, AND CONTROL METHOD OF AMPLIFICATION CIRCUIT
Publication/Patent Number: US2021006212A1 Publication Date: 2021-01-07 Application Number: 16/971,997 Filing Date: 2018-12-04 Inventor: Watanabe, Shinichi   Assignee: Sony Semiconductor Solutions Corporation   IPC: H03F3/16 Abstract: A decline in image quality that is caused by a variation of a gain in an amplification circuit is suppressed. The amplification circuit includes an amplification transistor, a cascode transistor, and a control circuit. The amplification transistor amplifies an input signal. The cascode transistor is configured to, in a case where a drain-source voltage between a drain and a source is higher than a predetermined voltage, supply a substantially-constant drain current to a reference potential line with a predetermined reference potential via the amplification transistor. Further, the control circuit is configured to, in a case where an initialization instruction is issued, control the drain-source voltage to be a value higher than the predetermined voltage.
9
US2021005654A1
IMAGING ELEMENT, IMAGING DEVICE, AND MANUFACTURING APPARATUS AND METHOD
Publication/Patent Number: US2021005654A1 Publication Date: 2021-01-07 Application Number: 17/027,486 Filing Date: 2020-09-21 Inventor: Fukuoka, Shinpei   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer. An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element. Further, a manufacturing apparatus of the present technology includes a vertical transistor manufacturing unit that manufactures a vertical transistor having a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. The present technology can be applied to imaging elements, imaging devices, and manufacturing apparatuses and methods, for example.
10
US10887568B2
Image processing apparatus, and image processing method
Publication/Patent Number: US10887568B2 Publication Date: 2021-01-05 Application Number: 16/482,332 Filing Date: 2018-03-14 Inventor: Imai, Kotaro   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N9/73 Abstract: The present technology relates to an image processing apparatus and an image processing method that can appropriately set an attention area in an image on which image correction processing is performed. An image processing apparatus according to an aspect of the present technology includes a speed detecting section that detects a moving speed of the mobile body; an attention area setting section that sets an attention area to an image imaged in an advancing direction of the mobile body on the basis of the moving speed detected; and an image correction processing section that performs the predetermined image correction processing on the image on the basis of a pixel value of a pixel belonging to the attention area on the image. The present technology is applicable to, for example, a vehicle-mounted sensor.
11
US2021006756A1
IMAGING DEVICE AND IMAGE PROCESSING SYSTEM
Publication/Patent Number: US2021006756A1 Publication Date: 2021-01-07 Application Number: 16/982,554 Filing Date: 2019-03-08 Inventor: Sato, Yasushi   Sakamoto, Junichi   Mishio, Mitsuru   Baba, Yuichiro   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N9/04 Abstract: An imaging device includes: a pixel array part in which a plurality of pixel groups each including four pixels arranged in a matrix of 2×2 is arrayed. As a pixel group including four pixels, there are formed a first pixel group that includes three pixels that receive red light and one pixel that receives infrared light, a second pixel group that includes three pixels that receive blue light and one pixel that receives infrared light, a third pixel group that includes three pixels that receive green light and one pixel that receives infrared light, and a fourth pixel group that includes three pixels that receive green light and one pixel that receives infrared light. Four pixel groups including the first pixel group, the second pixel group, the third pixel group, and the fourth pixel group are arranged to form a set of 2×2 units in which the first pixel group and the second pixel group are diagonally positioned, and the third pixel group and the fourth pixel group are diagonally positioned.
12
US2021005658A1
IMAGING UNIT AND ELECTRONIC APPARATUS
Publication/Patent Number: US2021005658A1 Publication Date: 2021-01-07 Application Number: 16/979,592 Filing Date: 2019-01-30 Inventor: Yukawa, Masahiko   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: An imaging unit that makes it possible to ensure high dimensional accuracy is provided. This solid-state imaging unit includes a stacked structure including a sensor substrate and a circuit board. The sensor board has an effective pixel region where an imaging device is disposed. The imaging device includes a plurality of pixels and is configured to receive external light in each of the pixels to generate a pixel signal. The circuit board includes a chip including a first portion and a second portion that are integrated with each other. The first portion includes a signal processing circuit that performs signal processing of the pixel signal. The second portion is disposed at a position different from a position of the first portion in an in-plane direction. Here, both the first portion and the second portion are disposed to overlap the effective pixel region in a stacking direction of the sensor board and the circuit board.
13
US2021005655A1
SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING ELEMENT
Publication/Patent Number: US2021005655A1 Publication Date: 2021-01-07 Application Number: 16/971,433 Filing Date: 2019-01-21 Inventor: Kawazoe, Takanobu   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: To prevent peeling at an interface between layers forming a layer structure of a solid-state imaging element even in a case where stress is caused by an increase in pressure in a cavity in a configuration in which a translucent member is provided on the solid-state imaging element with a support portion interposed therebetween and the cavity is formed between the solid-state imaging element and the translucent member. There are included a solid-state imaging element, the light-receiving side of which corresponds to one of plate surface sides of a semiconductor substrate; a translucent member provided on the light-receiving side of the solid-state imaging element at a predetermined distance therefrom; and a support portion that forms a cavity between the solid-state imaging element and the translucent member, in which the solid-state imaging element has a layer structure provided on the light-receiving side of the semiconductor substrate, the layer structure including a first layer, a second layer, and a third layer, the second layer being different in material from the first layer, the third layer being different in material from the first layer and formed in the second layer, and the third layer has a protrusion-and-recess shape portion at least in a region where the support portion is formed in a planar direction along the plate surface of the semiconductor substrate, the protrusion-and-recess shape portion forming an interface between the second layer and the third layer in a protrusion-and-recess shape.
14
US2021006737A1
SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE
Publication/Patent Number: US2021006737A1 Publication Date: 2021-01-07 Application Number: 17/028,269 Filing Date: 2020-09-22 Inventor: Nojima, Kenta   Nishikido, Kenju   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: There is provided a solid-state imaging device including a semiconductor substrate on which photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array, and a stacked body formed by stacking layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices, a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface, and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has structures at a height generally equal to a height of the in-layer lenses, the structures being provided on an outside of the imaging device region.
15
US2021005714A1
CONDUCTIVE STRUCTURE, METHOD OF FORMING CONDUCTIVE STRUCTURE, AND SEMICONDUCTOR DEVICE
Publication/Patent Number: US2021005714A1 Publication Date: 2021-01-07 Application Number: 16/968,670 Filing Date: 2019-01-22 Inventor: Tomida, Kazuyuki   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L29/10 Abstract: To further reduce contact resistance when a current or a voltage is taken out from a metal layer. A conductive structure including: an insulating layer; a metal layer provided on one surface of the insulating layer to protrude in a thickness direction of the insulating layer; and a two-dimensional material layer provided along outer shapes of the metal layer and the insulating layer from a side surface of the metal layer to the one surface of the insulating layer.
16
US2021005252A1
CROSS POINT DEVICE AND STORAGE APPARATUS
Publication/Patent Number: US2021005252A1 Publication Date: 2021-01-07 Application Number: 16/968,662 Filing Date: 2019-02-12 Inventor: Yasuda, Shuichiro   Ikarashi, Minoru   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: G11C13/00 Abstract: A cross point device according to an embodiment of the present disclosure includes a first electrode, a second electrode that is provided to be opposed to the first electrode, and a memory, a selector, and a resistor that are stacked between the first electrode and the second electrode. Of the resistor, a resistance value obtained through application of a negative voltage is lower than a resistance value obtained through application of a positive voltage.
17
US2021005656A1
IMAGING ELEMENT AND METHOD OF MANUFACTURING IMAGING ELEMENT
Publication/Patent Number: US2021005656A1 Publication Date: 2021-01-07 Application Number: 16/976,749 Filing Date: 2019-01-21 Inventor: Shibayama, Toshikazu   Moriya, Yusuke   Mitsunaga, Nobuyuki   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: To reduce reflection of incident light in an imaging element having a transparent resin arranged on a surface of a microlens. The imaging element includes a pixel, a microlens, a transparent resin layer, and a sealing glass. The pixel is formed on a semiconductor substrate and generates an image signal according to radiated light. The microlens is arranged adjacent to the pixel, collects incident light, irradiates the pixel with the incident light, and flattens a surface of the pixel. The transparent resin layer is arranged adjacent to the microlens and has a refractive index different from a refractive index of the microlens by a predetermined difference. The sealing glass is arranged adjacent to the transparent resin and seals the semiconductor substrate.
18
US2021005816A1
PHOTOELECTRIC CONVERSION FILM, SOLID-STATE IMAGE SENSOR, AND ELECTRONIC DEVICE
Publication/Patent Number: US2021005816A1 Publication Date: 2021-01-07 Application Number: 17/026,026 Filing Date: 2020-09-18 Inventor: Enoki, Osamu   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L51/00 Abstract: [Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic. [Solution] Provided is a photoelectric conversion film including: a subphthalocyanine derivative represented by the following General Formula (1), where, in General Formula (1), X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group, R1 to R3 each independently represent a substituted or unsubstituted ring structure, and at least one of R1 to R3 includes at least one hetero atom in the ring structure.