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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
US2021025990A1
LIGHT RECEPTION DEVICE AND DISTANCE MEASUREMENT DEVICE
Publication/Patent Number: US2021025990A1 Publication Date: 2021-01-28 Application Number: 16/957,253 Filing Date: 2019-04-09 Inventor: Ozawa, Osamu   Kamizuru, Hayato   Assignee: Sony Semiconductor Solutions Corporation   IPC: G01S7/4863 Abstract: A light reception device comprises a pixel array including a plurality of pixels, each of the plurality of pixels including a photosensitive element configured to generate a signal in response to detection of a photon by the photosensitive element, wherein the plurality of pixels include a first pixel having a first sensitivity to detect a first photon incident on the first pixel and a second pixel having a second sensitivity to detect a second photon incident on the second pixel, wherein the second sensitivity is lower than the first sensitivity.
2
US10896924B2
Solid-state imaging device, manufacturing method thereof, and camera with alternatively arranged pixel combinations
Publication/Patent Number: US10896924B2 Publication Date: 2021-01-19 Application Number: 16/791,681 Filing Date: 2020-02-14 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N3/14 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
3
EP3761097A1
CAMERA MODULE
Publication/Patent Number: EP3761097A1 Publication Date: 2021-01-06 Application Number: 19760433.3 Filing Date: 2019-02-13 Inventor: Dobashi, Eiichiro   Assignee: Sony Semiconductor Solutions Corporation   IPC: G02B7/02 Abstract: The present technology relates to a camera module that is enabled to have a lower height. The camera module includes a supporting component that includes an opening through which light from a lens collecting the light passes, the supporting component supporting an optical component between the lens and an imaging element that performs photoelectric conversion of the light, the optical component being placed so as to cover the opening and being supported on a side of the supporting component closer to the imaging element. In addition, around the opening, there is disposed a sloped portion inclined in the thickness direction of the supporting component, and the supporting component is placed such that the slope of the sloped portion and the lens face each other. Furthermore, the camera module is configured such that a portion of the lens is placed closer to a first face of the supporting component beyond a second face of the supporting component, the portion facing the supporting component, the optical component being placed on the first face, and the second face being opposite to the first face. The present technology can be applied to, for example, a camera module that collects light to capture an image.
4
US2021058577A1
SOLID-STATE IMAGE PICKUP APPARATUS, CORRECTION METHOD, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2021058577A1 Publication Date: 2021-02-25 Application Number: 17/090,666 Filing Date: 2020-11-05 Inventor: Tsuzuki, Takeru   Nishikori, Katsumi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: The present disclosure relates to a solid-state image pickup apparatus, a correction method, and an electronic apparatus, enabled to suppress an apparent uncomfortable feeling of an image output from a solid-state image pickup apparatus in which pixels of different OCL shapes are mounted mixedly. A solid-state image pickup apparatus according to an aspect of the present disclosure includes a pixel array in which a first pixel in which an OCL (On Chip Lens) of a standard size is formed and a second pixel in which an OCL of a size different from the standard size is formed are present mixedly, and a correction section that corrects a pixel value of the first pixel that is positioned in the vicinity of the second pixel among the first pixels on the pixel array. The present disclosure can be applied to, for example, a CMOS image sensor.
5
EP3780584A1
IMAGING ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: EP3780584A1 Publication Date: 2021-02-17 Application Number: 19786059.6 Filing Date: 2019-04-03 Inventor: Etou, Shinichirou   Ikeda, Yusuke   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/378 Abstract: An imaging element according to a first aspect includes: a successive approximation resistor type analog-digital converter that converts an analog signal output from a pixel including a photoelectric conversion part into a digital signal, in which the successive approximation resistor type analog-digital converter has a preamplifier having a band limiting function. An imaging element according to a second aspect includes a DAC in which the successive approximation resistor type analog-digital converter uses a capacitance element to convert a digital value after AD conversion to an analog value, and sets the analog value to a comparison reference for comparison with an analog input voltage. Then, the DAC includes one of lower-bit capacitance elements including a plurality of capacitance elements, and after performing AD conversion for all bits, each of the plurality of capacitance elements is selectively applied with at least a first reference voltage to a fourth reference voltage, so that re-AD conversion is performed for lower bits.
6
EP3780583A1
SOLID-STATE IMAGING ELEMENT, TEST SYSTEM, AND CONTROL METHOD FOR SOLID-STATE IMAGING ELEMENT
Publication/Patent Number: EP3780583A1 Publication Date: 2021-02-17 Application Number: 19777234.6 Filing Date: 2019-02-07 Inventor: Niwa, Atsumi   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/378 Abstract: Presence or absence of an abnormality is easily determined in a solid-state imaging element that detects an address event. The solid-state imaging element includes a photoelectric conversion element, a test signal supply unit, a selection unit, and a comparator. The photoelectric conversion element converts incident light into an electric signal by photoelectric conversion. The test signal supply unit supplies, as a test signal, a signal that fluctuates with time. The selection unit selects either the electric signal or the test signal. The comparator compares a predetermined threshold value with the signal selected by the selection unit, and outputs a result of the comparison.
7
US10910424B2
Solid-state image pickup unit, method of manufacturing the same, and electronic apparatus
Publication/Patent Number: US10910424B2 Publication Date: 2021-02-02 Application Number: 14/780,640 Filing Date: 2014-03-27 Inventor: Hatano, Keisuke   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state image pickup unit includes: a first member including a photoelectric conversion section; and a second member including a reflective plate with a concave surface section, the second member being bonded to a surface opposite to a light incident surface of the first member to allow the concave surface section of the reflective plate to face the photoelectric conversion section.
8
US2021091135A1
IMAGE SENSOR, IMAGE SENSOR MANUFACTURING METHOD, ELECTRONIC DEVICE, AND IMAGING MODULE
Publication/Patent Number: US2021091135A1 Publication Date: 2021-03-25 Application Number: 16/611,973 Filing Date: 2018-05-01 Inventor: Yokogawa, Sozo   Murakami, Hirotaka   Ito, Mikinori   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or N front-side-illuminated CMOS image sensor.
9
US2021091132A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATIVELY ARRANGED PIXEL COMBINATIONS
Publication/Patent Number: US2021091132A1 Publication Date: 2021-03-25 Application Number: 17/114,071 Filing Date: 2020-12-07 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
10
US2021091725A1
LIMITING CIRCUIT AND ELECTRONIC DEVICE
Publication/Patent Number: US2021091725A1 Publication Date: 2021-03-25 Application Number: 17/048,445 Filing Date: 2019-02-21 Inventor: Luo, Dan   Misul, Koichi   Assignee: Sony Semiconductor Solutions Corporation   IPC: H03F1/52 Abstract: In a limiting circuit that limits an output voltage of an operational amplifier, the signal quality of the output voltage is improved. The limiting circuit includes a short-circuit transistor and a gate voltage supply unit. In the limiting circuit, the short-circuit transistor short-circuits a path between an input terminal and an output terminal of the operational amplifier in a case where a voltage between the input terminal of the operational amplifier and the gate is higher than a predetermined threshold voltage. Furthermore, in the limiting circuit, the gate voltage supply unit supplies a voltage to the gate, the voltage depending on the threshold voltage and the output voltage of the output terminal.
11
US2021074954A1
DISPLAY ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: US2021074954A1 Publication Date: 2021-03-11 Application Number: 16/955,917 Filing Date: 2018-12-21 Inventor: Sekine, Masaaki   Sakairi, Takashi   Ohchi, Tomokazu   Ichikawa, Tomoyoshi   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L51/52 Abstract: There is provided a display element, including: a display region including pixels arranged in a two-dimensional form, each of the pixels including a plurality of sub pixels. In each pixel, a height of a light reflecting portion with respect to a light emitting portion is adjusted for each sub pixel.
12
EP3789730A1
LIGHT-RECEIVING ELEMENT AND DISTANCE MEASUREMENT MODULE
Publication/Patent Number: EP3789730A1 Publication Date: 2021-03-10 Application Number: 19832264.6 Filing Date: 2019-07-04 Inventor: Isogai, Yuji   Imoto, Tsutomu   Maruyama, Takuya   Murase, Takuro   Watanabe, Ryota   Wakano, Toshifumi   Assignee: Sony Semiconductor Solutions Corporation   IPC: G01C3/06 Abstract: The present technology relates to a light reception device and a distance measurement module that make it possible to improve a characteristic. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion to which a first voltage is applied and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion to which a second voltage different from the first voltage is applied and a second charge detection portion arranged around the second voltage application portion The on-chip lens is configured such that the position thereof differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.
13
US10950515B2
Semiconductor device, manufacturing method of semiconductor device, and electronic apparatus
Publication/Patent Number: US10950515B2 Publication Date: 2021-03-16 Application Number: 16/838,892 Filing Date: 2020-04-02 Inventor: Kishida, Eiichirou   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L23/31 Abstract: To prevent deterioration of light incident/emission environment in a semiconductor device in which a transmissive material is laminated on an optical element forming surface via an adhesive. The semiconductor device includes a semiconductor element manufactured by chip size packaging, a transmissive material which is bonded with an adhesive to cover an optical element forming surface of the semiconductor element, and a side surface protective resin which covers an entire side surface where a layer structure of the semiconductor element and the transmissive material is exposed.
14
US2021012174A1
NON-CONTACT COMMUNICATION MEDIUM, DRIVING METHOD THEREFOR, AND RECORDING MEDIUM CARTRIDGE
Publication/Patent Number: US2021012174A1 Publication Date: 2021-01-14 Application Number: 16/977,958 Filing Date: 2019-03-19 Inventor: Ono, Kazutoshi   Terashima, Toru   Fujita, Hiroaki   Nakano, Hiroaki   Maeda, Hideo   Shigyo, Nobuhiko   Assignee: Sony Semiconductor Solutions Corporation   IPC: G06K19/07 Abstract: A non-contact communication medium according to one disclosed embodiment includes a memory unit, a power generation unit, a power monitoring unit, and a capacitance control unit. The power generation unit includes a resonant circuit and a rectification circuit, and generates electric power to be supplied to the memory unit. The resonant circuit includes an antenna coil and resonant capacitance unit having a variable capacitance value, and the rectification circuit rectifies a resonant output of the resonant circuit. The power monitoring unit includes a current adjustment element, a reference voltage generation source, and an operational amplifier. The operational amplifier controls the current adjustment element such that an output voltage of the rectification circuit is equal to a reference voltage from the reference voltage generation source. The capacitance control unit is configured to control the resonant capacitance unit on the basis of an output of the operational amplifier.
15
EP3764490A1
SURFACE-EMITTING LASER
Publication/Patent Number: EP3764490A1 Publication Date: 2021-01-13 Application Number: 19763697.0 Filing Date: 2019-02-07 Inventor: Arakida, Takahiro   Kimura, Takayuki   Yoshida, Yuuta   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01S5/183 Abstract: A surface emitting laser according to an embodiment of the present disclosure includes an active layer, a first DBR layer and a second DBR layer sandwiching the active layer, and a dielectric layer and a reflection metal layer corresponding to a terminal end of a reflecting mirror on a side of the second DBR layer when viewed from the active layer.
16
US10887540B2
Solid-state imaging apparatus, method for driving solid-state imaging apparatus, and electronic equipment
Publication/Patent Number: US10887540B2 Publication Date: 2021-01-05 Application Number: 16/325,277 Filing Date: 2017-08-08 Inventor: Taura, Tadayuki   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/378 Abstract: The present disclosure relates to a solid-state imaging apparatus, a method for driving the solid-state imaging apparatus, and electronic equipment for improving the determination speed of comparators and allowing the comparators to operate faster. A differential input circuit operates on a first power supply voltage and outputs a signal when a voltage of a pixel signal is higher than a voltage of a reference signal. A voltage conversion circuit converts the output signal from the differential input circuit into a signal corresponding to a second power supply voltage. A positive feedback circuit accelerates a transition rate at which a comparison result signal of a comparison in voltage between the pixel signal and the reference signal is inverted. Multiple time code transfer sections each include a shift register that transfer a time code. The present disclosure can be applied, for example, to an imaging apparatus including A/D converters disposed in pixels.