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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
EP3528288B1
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS IMAGE SENSORS
Publication/Patent Number: EP3528288B1 Publication Date: 2020-08-26 Application Number: 18214935.1 Filing Date: 2014-06-20 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio, Inc.   IPC: H01L27/146
2
EP3608944A1
METHODS FOR REMOVING NUCLEI FORMED DURING EPITAXIAL GROWTH
Publication/Patent Number: EP3608944A1 Publication Date: 2020-02-12 Application Number: 19188206.7 Filing Date: 2016-05-23 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio, Inc.   IPC: H01L21/20 Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.
3
US10600640B2
Reduction of surface roughness in epitaxially grown germanium by controlled thermal oxidation
Publication/Patent Number: US10600640B2 Publication Date: 2020-03-24 Application Number: 15/624,603 Filing Date: 2017-06-15 Inventor: Jung, Woo-shik   Na, Yeul   Kim, Youngsik   Lee, Jae Hyung   Lee, Jin Hyung   Assignee: Stratio, Inc.   IPC: H01L21/02 Abstract: Methods for reducing surface roughness of germanium are described herein. In some embodiments, the surface roughness is reduced by thermal oxidation of germanium. In some embodiments, the surface roughness is further reduced by controlling a rate of the thermal oxidation. In some embodiments, the surface roughness is reduced by thermal annealing.
4
US2020256731A1
SPECTROMETERS WITH SELF-COMPENSATION OF MISALIGNMENT
Publication/Patent Number: US2020256731A1 Publication Date: 2020-08-13 Application Number: 16/859,941 Filing Date: 2020-04-27 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Kang, Juhyung   Assignee: Stratio   IPC: G01J3/14 Abstract: An apparatus for analyzing light includes an input aperture for receiving light; a first set of one or more lenses configured to relay light from the input aperture; and a prism assembly configured to disperse light from the first set of one or more lenses. The prism assembly includes a plurality of prisms that includes a first prism, a second prism that is distinct from the first prism, and a third prism that is distinct from the first prism and the second prism. The first prism is mechanically coupled with the second prism and the second prism is mechanically coupled with the third prism. The apparatus also includes a second set of one or more lenses configured to focus the dispersed light from the prism assembly; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals.
5
EP3701217A1
SPECTROMETERS WITH SELF-COMPENSATION OF MISALIGNMENT
Publication/Patent Number: EP3701217A1 Publication Date: 2020-09-02 Application Number: 18870058.7 Filing Date: 2018-10-29 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Kang, Juhyung   Assignee: Stratio   IPC: G01B9/00
6
US10281327B2
Spectrometers with self-compensation of rotational misalignment
Publication/Patent Number: US10281327B2 Publication Date: 2019-05-07 Application Number: 15/821,591 Filing Date: 2017-11-22 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Kang, Juhyung   Assignee: STRATIO   IPC: G01J3/14 Abstract: An apparatus for analyzing light includes an input aperture for receiving light; a first set of one or more lenses configured to relay light from the input aperture; and a prism assembly configured to disperse light from the first set of one or more lenses. The prism assembly includes a plurality of prisms that includes a first prism, a second prism that is distinct from the first prism, and a third prism that is distinct from the first prism and the second prism. The first prism is mechanically coupled with the second prism and the second prism is mechanically coupled with the third prism. The apparatus also includes a second set of one or more lenses configured to focus the dispersed light from the prism assembly; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals.
7
US10366884B1
Methods for forming a germanium island using selective epitaxial growth and a sacrificial filling layer
Publication/Patent Number: US10366884B1 Publication Date: 2019-07-30 Application Number: 16/184,984 Filing Date: 2018-11-08 Inventor: Lee, Jaehyung   Na, Yeul   Kim, Youngsik   Assignee: STRATIO   IPC: H01L21/02 Abstract: A method for obtaining a semiconductor island includes epitaxially growing a semiconductor structure over a substrate with a mask layer defining a region not covered by the mask layer. The semiconductor structure includes a first portion located adjacent to the mask layer and a second portion located away from the mask layer. The first portion has a first height that is less than a second height of a portion of the mask layer located adjacent to the first portion. The second portion has a third height that is equal to, or greater than, the second height. The method also includes forming a filling layer over at least the first portion; and, subsequently removing at least a portion of the semiconductor structure that is located above the second height. Devices made by this method are also disclosed.
8
EP3528288A1
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS IMAGE SENSORS
Publication/Patent Number: EP3528288A1 Publication Date: 2019-08-21 Application Number: 18214935.1 Filing Date: 2014-06-20 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio, Inc.   IPC: H01L27/146 Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.
9
US2019221595A1
Gate-controlled Charge Modulated Device for CMOS Image Sensors
Publication/Patent Number: US2019221595A1 Publication Date: 2019-07-18 Application Number: 16/167,241 Filing Date: 2018-10-22 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio Inc.   IPC: H01L27/146 Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.
10
WO2019084569A1
SPECTROMETERS WITH SELF-COMPENSATION OF MISALIGNMENT
Publication/Patent Number: WO2019084569A1 Publication Date: 2019-05-02 Application Number: 2018058059 Filing Date: 2018-10-29 Inventor: Lee, Jae   Kim, Youngsik   Kang, Juhyung   Na, Yeul   Assignee: LEE, JAE, HYUNG   STRATIO   IPC: G01J1/00 Abstract: An apparatus for analyzing light includes an input aperture for receiving light; a first set of one or more lenses configured to relay light from the input aperture; and a prism assembly configured to disperse light from the first set of one or more lenses. The prism assembly includes a plurality of prisms that includes a first prism, a second prism that is distinct from the first prism, and a third prism that is distinct from the first prism and the second prism. The first prism is mechanically coupled with the second prism and the second prism is mechanically coupled with the third prism. The apparatus also includes a second set of one or more lenses configured to focus the dispersed light from the prism assembly; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals.
11
KR20180029091A
METHODS FOR REMOVING NUCLEI FORMED DURING EPITAXIAL GROWTH
Publication/Patent Number: KR20180029091A Publication Date: 2018-03-19 Application Number: 20187006394 Filing Date: 2016-05-23 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Jung, Woo Shik   Assignee: STRATIO, INC.   STRATIO   IPC: H01L21/02 Abstract: 선택적 에피택셜 성장 공정 동안 형성되는 핵을 제거하는 방법은, 하나 이상의 마스크 층을 갖는 기판 위에 하나 이상의 반도체 구조의 제1 그룹을 에피택셜 성장시키는 단계를 포함한다. 복수의 반도체 구조의 제2 그룹은 하나 이상의 마스크 층 상에 형성된다. 방법은, 또한, 하나 이상의 반도체 구조의 제1 그룹 위에 하나 이상의 보호층을 형성하는 단계를 포함한다. 복수의 반도체 구조의 제2 그룹의 적어도 서브세트는 하나 이상의 보호층으로부터 노출된다. 방법은, 하나 이상의 반도체 구조의 제1 그룹 위에 하나 이상의 보호층을 형성하는 단계에 후속하여, 복수의 반도체 구조의 제2 그룹의 적어도 그 서브세트를 에칭하는 단계를 더 포함한다.
12
EP3011594B1
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS IMAGE SENSORS
Publication/Patent Number: EP3011594B1 Publication Date: 2018-12-26 Application Number: 14814462.9 Filing Date: 2014-06-20 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio, Inc.   IPC: H01L27/146
13
JP2018129536A
GATE CONTROL TYPE CHARGING MODULATION DEVICE FOR CMOS IMAGE SENSOR
Publication/Patent Number: JP2018129536A Publication Date: 2018-08-16 Application Number: 2018078326 Filing Date: 2018-04-16 Inventor: Lee, Jae-hyung   Kim, Youngsik   Jung, Woo Shik   Na, Yeul   Assignee: STRATIO INC   IPC: H01L31/10 Abstract: PROBLEM TO BE SOLVED: To provide an optical sensor having a small dark current, a high quantum efficiency, and an enhancement channel modulation.SOLUTION: A device 100 for detecting a light, includes: a first semiconductor region 104 doped by using a first type dopant; and a second semiconductor region 106 doped by using a second type dopant. The second semiconductor region is arranged on an upper direction of the first semiconductor region. The device includes: a gate insulation layer 110; a gate 112; a source 114; and a drain 116. The second semiconductor region includes an upper surface arranged so as to be directed to the gate insulation layer, and a bottom surface arranged on the side opposite to the upper surface of the second semiconductor region. The second semiconductor region includes: an upper part including the upper surface of the second semiconductor region; and a lower part including the bottom surface of the second semiconductor region which is alternately excluded from an upper side part. The first semiconductor region is contacted with both sides of an upper side part and a lower side part of the second semiconductor region.SELECTED DRAWING: Figure 1A
14
US10109662B2
Gate-controlled charge modulated device for CMOS image sensors
Publication/Patent Number: US10109662B2 Publication Date: 2018-10-23 Application Number: 14/967,262 Filing Date: 2015-12-11 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio, Inc.   IPC: H01L27/146 Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.
15
US201894976A1
Spectrometers with Self-Compensation of Rotational Misalignment
Publication/Patent Number: US201894976A1 Publication Date: 2018-04-05 Application Number: 20/171,582 Filing Date: 2017-11-22 Inventor: Saraswat, Krishna C   Na, Yeul   Lee, Jae Hyung   Na, Yeul   Assignee: Stratio   IPC: G01J3/28 Abstract: An apparatus for analyzing light includes an input aperture for receiving light; a first set of one or more lenses configured to relay light from the input aperture; and a prism assembly configured to disperse light from the first set of one or more lenses. The prism assembly includes a plurality of prisms that includes a first prism, a second prism that is distinct from the first prism, and a third prism that is distinct from the first prism and the second prism. The first prism is mechanically coupled with the second prism and the second prism is mechanically coupled with the third prism. The apparatus also includes a second set of one or more lenses configured to focus the dispersed light from the prism assembly; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals.
16
US2018094976A1
Spectrometers with Self-Compensation of Rotational Misalignment
Publication/Patent Number: US2018094976A1 Publication Date: 2018-04-05 Application Number: 15/821,591 Filing Date: 2017-11-22 Inventor: Kang, Juhyung   Na, Yeul   Kim, Youngsik   Lee, Jae Hyung   Assignee: Stratio   IPC: G02B27/10 Abstract: An apparatus for analyzing light includes an input aperture for receiving light; a first set of one or more lenses configured to relay light from the input aperture; and a prism assembly configured to disperse light from the first set of one or more lenses. The prism assembly includes a plurality of prisms that includes a first prism, a second prism that is distinct from the first prism, and a third prism that is distinct from the first prism and the second prism. The first prism is mechanically coupled with the second prism and the second prism is mechanically coupled with the third prism. The apparatus also includes a second set of one or more lenses configured to focus the dispersed light from the prism assembly; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals.
17
WO2017139008A1
BROADBAND VISIBLE-SHORTWAVE INFRARED SPECTROMETER
Publication/Patent Number: WO2017139008A1 Publication Date: 2017-08-17 Application Number: 2016064585 Filing Date: 2016-12-02 Inventor: Kim, Youngsik   Na, Yeul   Jung, Wooshik   Kang, Juhyung   Lee, Jae Hyung   Assignee: STRATIO, INC.   STRATIO   IPC: A61B1/06 Abstract: An apparatus for analyzing visible and shortwave infrared light includes an input aperture for receiving light that includes a visible wavelength component and a shortwave infrared wavelength component; a first set of one or more lenses configured to relay light from the input aperture; one or more dispersive optical elements configured to disperse light from the first set of one or more lenses; a second set of one or more lenses configured to focus the dispersed light from the one or more dispersive optical elements; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals that include electrical signals indicating intensity of the visible wavelength component and electrical signals indicating intensity of the shortwave infrared wavelength component.
18
EP3111466A1
METHODS FOR REMOVING NUCLEI FORMED DURING EPITAXIAL GROWTH
Publication/Patent Number: EP3111466A1 Publication Date: 2017-01-04 Application Number: 16750355.6 Filing Date: 2016-05-23 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio, Inc.   STRATIO   IPC: H01L21/02
19
KR20170029638A
METHODS FOR REMOVING NUCLEI FORMED DURING EPITAXIAL GROWTH
Publication/Patent Number: KR20170029638A Publication Date: 2017-03-15 Application Number: 20177005543 Filing Date: 2016-05-23 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Jung, Woo Shik   Assignee: STRATIO, INC.   STRATIO   IPC: H01L21/02 Abstract: 선택적 에피택셜 성장 공정 동안 형성되는 핵을 제거하는 방법은
20
US2017195327A1
PEER-TO-PEER COMMUNICATION BASED ON DEVICE IDENTIFIERS
Publication/Patent Number: US2017195327A1 Publication Date: 2017-07-06 Application Number: 15/468,027 Filing Date: 2017-03-23 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Jung, Wooshik   Bhattiprolu, Seema   Assignee: STRATIO, INC.   STRATIO   IPC: H04L29/06 Abstract: A server system receives from a first electronic device a first device identifier and network information of the first electronic device; subsequent to receiving the first device identifier and the network information of the first electronic device, receives from a second electronic device a second device identifier and network information of the second electronic device; in response to receiving from the second electronic device the second device identifier and the network information of the second electronic device, determines whether the first device identifier is associated with the second device identifier; and, in accordance with a determination that the first device identifier is associated with the second device identifier, sends to the second electronic device the network information of the first electronic device and/or sends to the first electronic device the network information of the second electronic device.
Total 2 pages