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1
US2020321484A1
PN JUNCTION AND PREPARATION METHOD AND USE THEREOF
Publication/Patent Number: US2020321484A1 Publication Date: 2020-10-08 Application Number: 16/837,189 Filing Date: 2020-04-01 Inventor: Gao, Liang   Zhang, Zhun   Lin, Yu-ting   Assignee: Sunflare (Nanjing) Energy Technology Ltd   IPC: H01L31/032 Abstract: The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InxGa1-x)Se2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.
2
EP3719854A1
PN JUNCTION AND PREPARATION METHOD AND USE THEREOF
Publication/Patent Number: EP3719854A1 Publication Date: 2020-10-07 Application Number: 20167490.0 Filing Date: 2020-04-01 Inventor: Gao, Liang   Zhang, Zhun   Lin, Yu-ting   Assignee: Sunflare nanjing energy technology ltd   IPC: H01L31/032 Abstract: The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InxGa1. x)Se2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.