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1
US10748947B2
Imaging device, manufacturing method, and electronic apparatus
Publication/Patent Number: US10748947B2 Publication Date: 2020-08-18 Application Number: 16/322,307 Filing Date: 2017-07-25 Inventor: Masuda, Yoshiaki   Ando, Atsuhiro   Kubo, Norihiro   Arai, Chihiro   Saito, Sotetsu   Tada, Masahiro   Miyazawa, Shinji   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L31/0203 Abstract: The present disclosure relates to an imaging device, a manufacturing method, and an electronic apparatus. An imaging device includes: a sensor substrate with an effective pixel area; a transparent sealing member that seals a surface of the sensor substrate; a sealing resin that bonds the sensor substrate and the sealing member; and a reinforcing resin that bonds the sensor substrate and the sealing member. A product of adhesive strength per unit area of the sealing resin and the reinforcing resin in the outer peripheral region and an area of a part bonded in the outer peripheral region is set to be larger than a product of adhesive strength per unit area of the sealing resin in the effective pixel area and an area of a part bonded in the effective pixel area. The present technology can be applied to, for example, a CMOS image sensor of WCSP.
2
US2019172863A1
IMAGING DEVICE, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2019172863A1 Publication Date: 2019-06-06 Application Number: 16/322,307 Filing Date: 2017-07-25 Inventor: Masuda, Yoshiaki   Ando, Atsuhiro   Kubo, Norihiro   Arai, Chihiro   Saito, Sotetsu   Tada, Masahiro   Miyazawa, Shinji   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to an imaging device, a manufacturing method, and an electronic apparatus—An imaging device includes: a sensor substrate with an effective pixel area; a transparent sealing member that seals a surface of the sensor substrate; a sealing resin that bonds the sensor substrate and the sealing member; and a reinforcing resin that bonds the sensor substrate and the sealing member. A product of adhesive strength per unit area of the sealing resin and the reinforcing resin in the outer peripheral region and an area of a part bonded in the outer peripheral region is set to be larger than a product of adhesive strength per unit area of the sealing resin in the effective pixel area and an area of a part bonded in the effective pixel area. The present technology can be applied to, for example, a CMOS image sensor of WCSP.
3
KR20190034553A
촬상 소자, 제조 방법, 및 전자 기기
Publication/Patent Number: KR20190034553A Publication Date: 2019-04-02 Application Number: 20197003594 Filing Date: 2017-07-25 Inventor: Miyazawa, Shinji   Arai, Chihiro   Ando, Atsuhiro   Saito, Sotetsu   Kubo, Norihiro   Masuda, Yoshiaki   Tada, Masahiro   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: 본 개시는, 보다 양호한 특성을 구비할 수 있도록 하는 촬상 소자, 제조 방법, 및 전자 기기에 관한 것이다. 촬상 소자는, 복수의 화소가 어레이 형상으로 배치된 유효 화소 영역이 설치되는 센서 기판과, 센서 기판의 유효 화소 영역측의 면을 봉지하는 투명한 봉지 부재와, 적어도 유효 화소 영역을 포함하는 영역에 있어서 센서 기판 및 봉지 부재를 접착하는 시일 수지와, 평면적으로 보았을 때에 유효 화소 영역보다 외측이 되는 외주 영역에 있어서 센서 기판 및 봉지 부재를 접착하며, 시일 수지보다 강성이 높은 보강 수지를 구비한다. 그리고, 외주 영역에 있어서의 시일 수지 및 보강 수지에 의한 단위면적당의 접착력과, 외주 영역에 있어서 접착되는 접착 면적과의 적이, 유효 화소 영역에 있어서의 시일 수지에 의한 단위면적당의 접착력과, 유효 화소 영역에 있어서 접착되는 접착 면적과의 적보다 크게 설정된다. 본 기술은, 예를 들어, WCSP의 CMOS 이미지 센서에 적용할 수 있다.
4
US2017234971A1
PHASE CALIBRATION DEVICE FOR A PLURALITY OF TRANSMISSION ANTENNAS
Publication/Patent Number: US2017234971A1 Publication Date: 2017-08-17 Application Number: 15/407,464 Filing Date: 2017-01-17 Inventor: Arai, Chihiro   Assignee: DENSO CORPORATION   IPC: G01S7/40 Abstract: In a phase calibration device, a first integrated circuit outputs a transmission signal for generating a transmission wave of a first transmission antenna, a second integrated circuit outputs a transmission signal for generating a transmission wave of a second transmission antenna, a calibration reception antenna is disposed in a state to be theoretically identical in electric coupling amount when receiving the transmission waves of the first transmission antenna and the second transmission antenna, a reception circuit acquires a received signal from the calibration reception antenna, and a control circuit calibrates phases of the transmission signals based on an amplitude of the received signal of the reception circuit when the first integrated circuit and the second integrated circuit output the transmission signals to the first transmission antenna and the second transmission antenna.
5
TWI594578B
Semiconductor device and computer-readable medium
Publication/Patent Number: TWI594578B Publication Date: 2017-08-01 Application Number: 102108622 Filing Date: 2013-03-12 Inventor: Uozumi, Toshiya   Arai, Chihiro   Ueda, Keisuke   Assignee: Renesas Electronics Corporation   IPC: H03L7/099 Abstract: A conventional semiconductor device has a problem that acquisition of variation information of circuit elements constructing the semiconductor device is not easy. According to an embodiment
6
US8963593B2
High-frequency signal processing device
Publication/Patent Number: US8963593B2 Publication Date: 2015-02-24 Application Number: 14/217,971 Filing Date: 2014-03-18 Inventor: Arai, Chihiro   Uozumi, Toshiya   Ueda, Keisuke   Assignee: Renesas Electronics Corporation   IPC: H03L7/06 Abstract: A high-frequency signal processing device having a frequency synthesizer (PLL: Phase Locked Loop) is provided. A control circuit measures oscillation frequencies obtained upon setting a bias current of an oscillation circuit to first and second bias setting values and acquires a frequency difference amount of the oscillation frequencies. The frequency difference amount may be acquired as difference amount of setting values of a coarse adjustment capacitance setting signal (CTRM) using, for example, an automatic frequency selector unit. The control circuit retains a relationship of a difference amount of bias setting values and a difference value of setting values of the CTRM and approximating the relationship to a linear function. Thereafter, the control circuit defines, upon switching the bias current during locking of the PLL, the CTRM based on the linear function and switches the CTRM together with the bias current.
7
US9094021B2
Semiconductor device and variation information obtaining program
Publication/Patent Number: US9094021B2 Publication Date: 2015-07-28 Application Number: 13/783,329 Filing Date: 2013-03-03 Inventor: Arai, Chihiro   Uozumi, Toshiya   Ueda, Keisuke   Assignee: Renesas Electronics Corporation   IPC: H03L7/08 Abstract: A conventional semiconductor device has a problem that acquisition of variation information of circuit elements constructing the semiconductor device is not easy. According to an embodiment, a semiconductor device has a control circuit which makes an oscillation circuit operate by at least two operation current values, obtains first frequency information related to frequency of an output signal corresponding to a first operation current value and second frequency information related to frequency of an output signal corresponding to a second operation current value, and obtains manufacture variation information of a circuit element on the basis of the difference between the first and second frequency information.
8
US8716811B2
Semiconductor device
Publication/Patent Number: US8716811B2 Publication Date: 2014-05-06 Application Number: 13/410,422 Filing Date: 2012-03-02 Inventor: Mori, Hideki   Arai, Chihiro   Assignee: Sony Corporation   IPC: H01L29/66 Abstract: A semiconductor device includes a first conduction-type semiconductor substrate, a first semiconductor region of a first conduction-type formed on the semiconductor substrate, a second semiconductor region of a second conduction-type formed on a surface of the first semiconductor region, a third semiconductor region of the second conduction-type formed to be separated from the second semiconductor region on the surface of the first semiconductor region, a fourth semiconductor region of the second conduction-type formed to be separated from the second semiconductor region and the third semiconductor region on the surface of the first semiconductor region, and a first electrode connected to the second semiconductor region and the third semiconductor region.
9
EP1049168B1
Semiconductor device
Publication/Patent Number: EP1049168B1 Publication Date: 2014-12-31 Application Number: 00108794.9 Filing Date: 2000-04-25 Inventor: Fujisawa, Tomotaka   Arai, Chihiro   Assignee: Sony Corporation   IPC: H01L27/144 Abstract: A semiconductor device in which a photoreceptor element and a semiconductor element are formed on a common semiconductor substrate, includes: a substrate of a first conductive type; and a semiconductor layer of a second conductive type formed on the substrate; wherein the photoreceptor element is composed of the substrate and the semiconductor layer; and an impurity concentration region of the first conductive type having an impurity concentration higher than that of the substrate is provided at a position under the semiconductor layer in a region where the semiconductor element is to be formed.
10
EP1172865B1
Semiconductor photosensitive device
Publication/Patent Number: EP1172865B1 Publication Date: 2014-12-03 Application Number: 01116841.6 Filing Date: 2001-07-10 Inventor: Fujisawa, Tomotaka Sony Corporation   Arai, Chihiro Sony Corporation   Assignee: Sony Corporation   IPC: H01L31/11 Abstract: A semiconductor device having a photo diode which has substantially the same sensitivity to a plurality of light having different wavelengths, comprising a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed at a surface layer portion of said first conductivity type semiconductor layer, wherein the sensitivity to light of a first wavelength and the sensitivity to light of a second wavelength which is different from said first wavelength are made substantially the same by designing a region in which a depletion layer spreads from a junction of said first conductivity type semiconductor layer and said second conductivity type semiconductor layer when an inverse bias is applied to said first conductivity type semiconductor layer and said second conductivity type semiconductor layer, for example, by designing it to spread in a region of 3 to 6 mu m or a region of 2 to 7 mu m from the surface of the second conductivity type semiconductor layer in the depth direction.
11
US2014266342A1
HIGH-FREQUENCY SIGNAL PROCESSING DEVICE
Publication/Patent Number: US2014266342A1 Publication Date: 2014-09-18 Application Number: 14/217,971 Filing Date: 2014-03-18 Inventor: Arai, Chihiro   Uozumi, Toshiya   Ueda, Keisuke   Assignee: Renesas Electronics Corporation   IPC: H03L7/093 Abstract: A high-frequency signal processing device having a frequency synthesizer (PLL: Phase Locked Loop) is provided. A control circuit measures oscillation frequencies obtained upon setting a bias current of an oscillation circuit to first and second bias setting values and acquires a frequency difference amount of the oscillation frequencies. The frequency difference amount may be acquired as difference amount of setting values of a coarse adjustment capacitance setting signal (CTRM) using, for example, an automatic frequency selector unit. The control circuit retains a relationship of a difference amount of bias setting values and a difference value of setting values of the CTRM and approximating the relationship to a linear function. Thereafter, the control circuit defines, upon switching the bias current during locking of the PLL, the CTRM based on the linear function and switches the CTRM together with the bias current.
12
KR101248084B1
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
Publication/Patent Number: KR101248084B1 Publication Date: 2013-03-27 Application Number: 20087005372 Filing Date: 2006-08-10 Inventor: Arai, Chihiro   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: A semiconductor device (1) has a plurality of photodiodes (20) on a semiconductor substrate (11). The photodiodes (20(20a
13
TW201351886A
Semiconductor device and computer-readable medium
Publication/Patent Number: TW201351886A Publication Date: 2013-12-16 Application Number: 102108622 Filing Date: 2013-03-12 Inventor: Uozumi, Toshiya   Arai, Chihiro   Ueda, Keisuke   Assignee: Renesas Electronics Corporation   IPC: H03L7/099 Abstract: A conventional semiconductor device has a problem that acquisition of variation information of circuit elements constructing the semiconductor device is not easy. According to an embodiment
14
US2013257547A1
SEMICONDUCTOR DEVICE AND VARIATION INFORMATION OBTAINING PROGRAM
Publication/Patent Number: US2013257547A1 Publication Date: 2013-10-03 Application Number: 13/783,329 Filing Date: 2013-03-03 Inventor: Arai, Chihiro   Uozumi, Toshiya   Ueda, Keisuke   Assignee: RENESAS ELECTRONICS CORPORATION   IPC: H03L7/06 Abstract: A conventional semiconductor device has a problem that acquisition of variation information of circuit elements constructing the semiconductor device is not easy. According to an embodiment, a semiconductor device has a control circuit which makes an oscillation circuit operate by at least two operation current values, obtains first frequency information related to frequency of an output signal corresponding to a first operation current value and second frequency information related to frequency of an output signal corresponding to a second operation current value, and obtains manufacture variation information of a circuit element on the basis of the difference between the first and second frequency information.
15
JP2013022984A
INSTRUMENT FOR VEHICLE
Publication/Patent Number: JP2013022984A Publication Date: 2013-02-04 Application Number: 2011157265 Filing Date: 2011-07-16 Inventor: Saito, Tatsuya   Fujita, Katsura   Arai, Chihiro   Omoto, Yuta   Nakamata, Koji   Assignee: NIPPON SEIKI CO LTD   IPC: B60K35/00 Abstract: PROBLEM TO BE SOLVED: To provide an instrument for vehicle
16
JP5167671B2
SEMICONDUCTOR CHIP
Publication/Patent Number: JP5167671B2 Publication Date: 2013-03-21 Application Number: 2007093349 Filing Date: 2007-03-30 Inventor: Yamada, Takaaki   Abe, Masami   Arai, Chihiro   Kadoyama, Takahide   Kamo, Tokuji   Assignee: SONY CORP   IPC: H01L21/3205 Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip capable of reducing the noise of a circuit propagating to another circuit via a sealing ring. SOLUTION: The semiconductor chip comprises a p-type semiconductor substrate 40
17
JP5023409B2
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Publication/Patent Number: JP5023409B2 Publication Date: 2012-09-12 Application Number: 2001042967 Filing Date: 2001-02-20 Inventor: Arai, Chihiro   Assignee: SONY CORP   IPC: H01L21/331 Abstract: PROBLEM TO BE SOLVED: To mount a transistor of a double polysilicon structure
18
JP4940511B2
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Publication/Patent Number: JP4940511B2 Publication Date: 2012-05-30 Application Number: 2001204577 Filing Date: 2001-07-05 Inventor: Arai, Chihiro   Assignee: SONY CORP   IPC: H01L21/8222 Abstract: PROBLEM TO BE SOLVED: To electrically isolate a high performance photo diode from semiconductor integrated circuit which are formed on the same substrate. SOLUTION: A semiconductor device 1 comprises a photo diode 2 consisting of a high-concentration N-type silicon substrate 5
19
EP1933390A4
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
Publication/Patent Number: EP1933390A4 Publication Date: 2012-05-23 Application Number: 06782631 Filing Date: 2006-08-10 Inventor: Arai, Chihiro   Assignee: Sony Corporation   IPC: H01L21/76 Abstract: A semiconductor device (1) includes a plurality of photodiodes (20) on a semiconductor substrate (11). Cathodes (22) and a common anode (21) of the plurality of photodiodes (20 (20a
20
JP4951807B2
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Publication/Patent Number: JP4951807B2 Publication Date: 2012-06-13 Application Number: 2000210259 Filing Date: 2000-07-11 Inventor: Arai, Chihiro   Assignee: SONY CORP   IPC: H01L21/331 Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having lateral bipolar transistors capable of being highly integrated as well as a semiconductor device having good bipolar transistor characteristics and its manufacturing method. SOLUTION: An electrode layer 330 is formed which is connected to a semiconductor substrate 10 through an opening formed in an insulation film at a base leading part of a lateral bipolar transistor and covers a base region between an emitter and a collector. The side wall of a gate electrode of a MOS transistor and the insulation film covering the base region between the emitter and the collector of the lateral bipolar transistor are made of the same insulation film 28. A gate electrode of the MOS transistor is formed
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