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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
EP3764490A1
SURFACE-EMITTING LASER
Publication/Patent Number: EP3764490A1 Publication Date: 2021-01-13 Application Number: 19763697.0 Filing Date: 2019-02-07 Inventor: Arakida, Takahiro   Kimura, Takayuki   Yoshida, Yuuta   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01S5/183 Abstract: A surface emitting laser according to an embodiment of the present disclosure includes an active layer, a first DBR layer and a second DBR layer sandwiching the active layer, and a dielectric layer and a reflection metal layer corresponding to a terminal end of a reflecting mirror on a side of the second DBR layer when viewed from the active layer.
2
US2021044087A1
SURFACE EMITTING LASER
Publication/Patent Number: US2021044087A1 Publication Date: 2021-02-11 Application Number: 16/978,052 Filing Date: 2019-02-07 Inventor: Arakida, Takahiro   Kimura, Takayuki   Yoshida, Yuuta   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01S5/183 Abstract: A surface emitting laser according to an embodiment of the present disclosure includes an active layer, a first DBR layer and a second DBR layer sandwiching the active layer, and a dielectric layer and a reflection metal layer corresponding to a terminal end of a reflecting mirror on a side of the second DBR layer when viewed from the active layer.
3
US2021098971A1
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US2021098971A1 Publication Date: 2021-04-01 Application Number: 17/067,451 Filing Date: 2020-10-09 Inventor: Oki, Tomoyuki   Masui, Yuji   Yamauchi, Yoshinori   Koda, Rintaro   Arakida, Takahiro   Assignee: Sony Corporation   IPC: H01S5/183 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
4
US10833479B2
Light-emitting element and method for manufacturing the same
Publication/Patent Number: US10833479B2 Publication Date: 2020-11-10 Application Number: 16/173,226 Filing Date: 2018-10-29 Inventor: Oki, Tomoyuki   Masui, Yuji   Yamauchi, Yoshinori   Koda, Rintaro   Arakida, Takahiro   Assignee: Sony Corporation   IPC: H01S5/00 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
5
US10811562B2
Light emitting diode
Publication/Patent Number: US10811562B2 Publication Date: 2020-10-20 Application Number: 15/544,101 Filing Date: 2015-10-22 Inventor: Aoyagi, Hidekazu   Arakida, Takahiro   Kawasaki, Takahiko   Itou, Katsutoshi   Nakashima, Makoto   Assignee: SONY CORPORATION   IPC: H01L33/42 Abstract: A light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23, and a first portion 22A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32. A second portion 22B of the second compound semiconductor layer is formed on the first portion 22A of the second compound semiconductor layer, apart from an edge portion 22a3 of the first portion 22A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22B of the second compound semiconductor layer, and light is outputted at least from the top surface 22b1 and a side surface 22b2 of the second portion 22B of the second compound semiconductor layer.
6
USRE47188E1
Semiconductor device and method of manufacturing the same
Publication/Patent Number: USRE47188E1 Publication Date: 2019-01-01 Application Number: 14/722,959 Filing Date: 2015-05-27 Inventor: Koda, Rintaro   Arakida, Takahiro   Masui, Yuji   Oki, Tomoyuki   Assignee: Sony Corporation   IPC: H01L31/12 Abstract: The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.
7
WO2019171869A1
SURFACE-EMITTING LASER
Publication/Patent Number: WO2019171869A1 Publication Date: 2019-09-12 Application Number: 2019004373 Filing Date: 2019-02-07 Inventor: Kimura, Takayuki   Yoshida, Yuuta   Arakida, Takahiro   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01S5/183 Abstract: A surface-emitting laser according to one embodiment of the present disclosure comprises an active layer, a first DBR layer and second DBR layer that sandwich the active layer, and a dielectric layer and reflective metal layer that correspond to the terminal parts of a reflective mirror on the second DBR layer side as viewed from the active layer.
8
US2019074662A1
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US2019074662A1 Publication Date: 2019-03-07 Application Number: 16/173,226 Filing Date: 2018-10-29 Inventor: Oki, Tomoyuki   Masui, Yuji   Yamauchi, Yoshinori   Koda, Rintaro   Arakida, Takahiro   Assignee: Sony Corporation   IPC: H01S5/183 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
9
US201974662A1
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US201974662A1 Publication Date: 2019-03-07 Application Number: 20/181,617 Filing Date: 2018-10-29 Inventor: Masui, Yuji   Arakida, Takahiro   Koda, Rintaro   Oki, Tomoyuki   Yamauchi, Yoshinori   Assignee: Sony Corporation   IPC: H01S5/343 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
10
USRE46996E1
Laser diode array, method of manufacturing same, printer, and optical communication device
Publication/Patent Number: USRE46996E1 Publication Date: 2018-08-14 Application Number: 15/193,637 Filing Date: 2016-06-27 Inventor: Arakida, Takahiro   Shiozaki, Masaki   Maeda, Osamu   Assignee: Sony Corporation   IPC: H01S5/343 Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.
11
US9941662B2
Light-emitting element and method for manufacturing the same
Publication/Patent Number: US9941662B2 Publication Date: 2018-04-10 Application Number: 15/272,181 Filing Date: 2016-09-21 Inventor: Oki, Tomoyuki   Masui, Yuji   Yamauchi, Yoshinori   Koda, Rintaro   Arakida, Takahiro   Assignee: Sony Corporation   IPC: H01S5/125 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
12
US2018069375A1
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US2018069375A1 Publication Date: 2018-03-08 Application Number: 15/810,690 Filing Date: 2017-11-13 Inventor: Arakida, Takahiro   Koda, Rintaro   Yamauchi, Yoshinori   Masui, Yuji   Oki, Tomoyuki   Assignee: Sony Corporation   IPC: H01S5/042 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
13
US10153613B2
Light-emitting element and method for manufacturing the same
Publication/Patent Number: US10153613B2 Publication Date: 2018-12-11 Application Number: 15/810,690 Filing Date: 2017-11-13 Inventor: Oki, Tomoyuki   Masui, Yuji   Yamauchi, Yoshinori   Koda, Rintaro   Arakida, Takahiro   Assignee: Sony Corporation   IPC: H01S5/00 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
14
US201869375A1
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US201869375A1 Publication Date: 2018-03-08 Application Number: 20/171,581 Filing Date: 2017-11-13 Inventor: Masui, Yuji   Arakida, Takahiro   Koda, Rintaro   Oki, Tomoyuki   Yamauchi, Yoshinori   Assignee: Sony Corporation   IPC: H01S5/183 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
15
KR101760937B1
VERTICAL CAVITY SURFACE EMITTING LASER
Publication/Patent Number: KR101760937B1 Publication Date: 2017-07-24 Application Number: 20090071203 Filing Date: 2009-08-03 Inventor: Maeda, Osamu   Masui, Yuji   Arakida, Takahiro   Shiozaki, Masaki   Kawasumi, Takayuki   Assignee: Sony Corporation   IPC: H01S5/00 Abstract: PURPOSE: A vertical cavity surface emitting laser is provided to suppress the influence of a basic transverse mode on an optical output and a high transverse mode oscillation by forming a reflexibility control layer on a second multilayer reflector. CONSTITUTION: A laminate structure is formed on one side of a substrate(10). The laminate structure includes a lower DBR layer(11)
16
US2017358711A1
LIGHT EMITTING DIODE
Publication/Patent Number: US2017358711A1 Publication Date: 2017-12-14 Application Number: 15/544,101 Filing Date: 2015-10-22 Inventor: Aoyagi, Hidekazu   Arakida, Takahiro   Kawasaki, Takahiko   Itou, Katsutoshi   Nakashima, Makoto   Assignee: SONY CORPORATION   IPC: H01L33/24 Abstract: Provided is a light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23 formed of a compound semiconductor, and a first portion 22A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32. A second portion 22B of the second compound semiconductor layer is formed on the first portion 22A of the second compound semiconductor layer, apart from an edge portion 22a3 of the first portion 22A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22B of the second compound semiconductor layer, and light is outputted at least from the top surface 22b1 and a side surface 22b2 of the second portion 22B of the second compound semiconductor layer.
17
US2017012409A1
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US2017012409A1 Publication Date: 2017-01-12 Application Number: 15/272,181 Filing Date: 2016-09-21 Inventor: Oki, Tomoyuki   Masui, Yuji   Yamauchi, Yoshinori   Koda, Rintaro   Arakida, Takahiro   Assignee: Sony Corporation   IPC: H01S5/183 Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
18
USRE46633E1
Optical module
Publication/Patent Number: USRE46633E1 Publication Date: 2017-12-12 Application Number: 15/046,557 Filing Date: 2016-02-18 Inventor: Nakata, Hidehiko   Arakida, Takahiro   Naruse, Terukazu   Okubo, Miwa   Yamada, Kazuyoshi   Eguchi, Momoko   Assignee: SONY CORPORATION   IPC: G02B6/42 Abstract: An optical module has at least two optical elements mounted in parallel with each other. The module also has a first electrode pad which is formed between the paralleled optical elements and grounded to a ground potential and a second electrode pad which is arranged along a line that is intersected with a direction in which the optical elements are arranged, which faces the first electrode pad and is grounded to the ground potential. The module further has a conductive shield member which is connected to the first electrode pad and the second electrode pad and placed between electrical signal transmission paths each connected to the optical elements.
19
US2017162747A1
LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT ASSEMBLY
Publication/Patent Number: US2017162747A1 Publication Date: 2017-06-08 Application Number: 15/320,428 Filing Date: 2015-05-15 Inventor: Aoyagi, Hidekazu   Arakida, Takahiro   Kawasaki, Takahiko   Koyama, Takahiro   Itou, Katsutoshi   Nakashima, Makoto   Assignee: SONY CORPORATION   IPC: H01L33/20 Abstract: The light-emitting element of the present disclosure has a constant light emission intensity over a specific range of emission angle of light emitted from the center of its main light-emitting surface.
20
USRE46059E1
Laser diode array, method of manufacturing same, printer, and optical communication device
Publication/Patent Number: USRE46059E1 Publication Date: 2016-07-05 Application Number: 14/605,715 Filing Date: 2015-01-26 Inventor: Maeda, Osamu   Shiozaki, Masaki   Arakida, Takahiro   Assignee: Sony Corporation   IPC: H01S5/187 Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.
Total 18 pages