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1
US2020333442A1
METHOD FOR FABRICATING A PLURALITY OF TIME-OF-FLIGHT SENSOR DEVICES
Publication/Patent Number: US2020333442A1 Publication Date: 2020-10-22 Application Number: 16/754,335 Filing Date: 2018-10-10 Inventor: Etschmaier, Harald   Bodner thomas   Assignee: ams AG   IPC: G01S7/481 Abstract: A method for fabricating a plurality of Time-of-Flight sensor devices (1) comprises a step of providing a wafer (100) including a plurality of wafer portions (110) for a respective one of the Time-of-Flight sensor devices (1), wherein each of the wafer portions (110) includes a first light detecting area (10) and a second light detecting area (20) and a respective light emitter device (30). The respective light emitter device (30) and the respective first light detecting area (10) is encapsulated by a first volume (40) of a light transparent material (130), and the respective second light detecting area (20) is encapsulated by a second volume (50) of the light transparent material (130). Before singulation of the devices (1), an opaque material (60) is placed on the wafer portions (110) in a space (120) between the respective first and second volume (40, 50) of the light transparent material (130).
2
EP3471132B1
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Publication/Patent Number: EP3471132B1 Publication Date: 2020-02-26 Application Number: 17196160.0 Filing Date: 2017-10-12 Inventor: Bodner thomas   Jessenig, Stefan   Schrank, Franz   Assignee: ams AG   IPC: H01L21/768
3
EP3671823A1
SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA
Publication/Patent Number: EP3671823A1 Publication Date: 2020-06-24 Application Number: 18215468.2 Filing Date: 2018-12-21 Inventor: Löffler, Bernhard   Bodner thomas   Siegert, Jörg   Assignee: ams AG   IPC: H01L21/768 Abstract: An intermetal dielectric (3) and metal layers (4) embedded in the intermetal dielectric (3) are arranged on a substrate (1) of semiconductor material. A via hole (7) is formed in the substrate, and a metallization (9) contacting a contact area (4*) of one of the metal layers (4') is applied in the via hole. The metallization (9), the metal layer (4') comprising the contact area (4*) and the intermetal dielectric (3) are partially removed at the bottom of the via hole in order to form a hole (16) penetrating the intermetal dielectric and extending the via hole. A continuous passivation (12) is arranged on sidewalls within the via hole (7) and the hole (16), and the metallization (9) contacts the contact area (4*) around the hole (16). Thus the presence of a thin membrane of layers, which is usually formed at the bottom of a hollow through-substrate via, is avoided.
4
US2020243387A1
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Publication/Patent Number: US2020243387A1 Publication Date: 2020-07-30 Application Number: 16/754,323 Filing Date: 2018-10-11 Inventor: Bodner thomas   Jessenig, Stefan   Schrank, Franz   Assignee: ams AG   IPC: H01L21/768 Abstract: A method for manufacturing a semiconductor device comprises the steps of providing a semiconductor body with a main plane of extension, and forming a trench in the semiconductor body from a top side of the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body. The method further comprises the steps of coating inner walls of the trench with an isolation layer, depositing a metallization layer within the trench, and depositing a passivation layer within the trench such that an inner volume of the trench is free of any material, wherein inner surfaces that are adjacent to the inner volume are treated to be hydrophobic at least in places. Furthermore, a semiconductor device is provided.
5
US10734534B2
Method of producing an optical sensor at wafer-level and optical sensor
Publication/Patent Number: US10734534B2 Publication Date: 2020-08-04 Application Number: 15/746,342 Filing Date: 2016-07-22 Inventor: Etschmaier, Harald   Toschkoff, Gregor   Bodner thomas   Schrank, Franz   Assignee: ams AG   IPC: H01L31/0203 Abstract: A method of producing an optical sensor at wafer-level, comprising the steps of providing a wafer having a main top surface and a main back surface and arrange at or near the top surface of the wafer at least one first integrated circuit having at least one light sensitive component. Furthermore, providing in the wafer at least one through-substrate via for electrically contacting the top surface and back surface and forming a first mold structure by wafer-level molding a first mold material over the top surface of the wafer, such that the first mold structure at least partly encloses the first integrated circuit. Finally, forming a second mold structure by wafer-level molding a second mold material over the first mold structure, such that the second mold structure at least partly encloses the first mold structure.
6
US10847664B2
Optical package and method of producing an optical package
Publication/Patent Number: US10847664B2 Publication Date: 2020-11-24 Application Number: 15/773,539 Filing Date: 2016-11-04 Inventor: Mehrl, David   Bodner thomas   Toschkoff, Gregor   Etschmaier, Harald   Schrank, Franz   Assignee: AMS AG   IPC: H01L31/0232 Abstract: An optical package is proposed comprising a carrier, an optoelectronic component, an aspheric lens, and a reflective layer. The carrier comprises electrical interconnections and the optoelectric component is arranged for emitting and/or detecting electromagnetic radiation in a specified wavelength range. Furthermore, the optoelectric component is mounted on the carrier or integrated into the carrier and electrically connected to the electric interconnections. The aspheric lens has an upper surface, a lateral surface, and a bottom surface and the bottom surface is arranged on or near the optoelectric component. The aspheric lens comprises a material which is at least transparent in the specified wavelength range. The reflective layer comprises a reflective material, wherein the reflective layer at least partly covers the lateral surface of the aspheric lens, and wherein the reflective material is at least partly reflective in the specified wavelength range.
7
US2020313031A1
METHOD FOR MANUFACTURING AN OPTICAL SENSOR AND OPTICAL SENSOR
Publication/Patent Number: US2020313031A1 Publication Date: 2020-10-01 Application Number: 16/756,025 Filing Date: 2018-10-15 Inventor: Toschkoff, Gregor   Bodner thomas   Schrank, Franz   Labodi, Miklos   Siegert, Joerg   Schrems, Martin   Assignee: ams AG   IPC: H01L31/18 Abstract: A method for manufacturing an optical sensor is provided. The method comprises providing an optical sensor arrangement which comprises at least two optical sensor elements on a carrier, where the optical sensor arrangement comprises a light entrance surface at the side of the optical sensor elements facing away from the carrier. The method further comprises forming a trench between two optical sensor elements in a vertical direction which is perpendicular to the main plane of extension of the carrier, where the trench extends from the light entrance surface of the sensor arrangement at least to the carrier. Moreover, the method comprises coating the trench with an opaque material, forming electrical contacts for the at least two optical sensor elements on a back side of the carrier facing away from the optical sensor elements, and forming at least one optical sensor by dicing the optical sensor arrangement along the trench. Each optical sensor comprises an optical sensor element, and the light entrance surface is free of electrical contacts and at least partially free of the opaque material above the optical sensor elements. Furthermore, an optical sensor is provided.
8
EP3471146B1
METHOD FOR MANUFACTURING AN OPTICAL SENSOR AND OPTICAL SENSOR
Publication/Patent Number: EP3471146B1 Publication Date: 2020-09-09 Application Number: 17196609.6 Filing Date: 2017-10-16 Inventor: Toschkoff, Gregor   Bodner thomas   Schrank, Franz   Labodi, Miklos   Siegert, Jörg   Schrems, Martin   Assignee: ams AG   IPC: H01L27/146
9
US2020401430A1
GENERATION OF BOTS BASED ON OBSERVED BEHAVIOR
Publication/Patent Number: US2020401430A1 Publication Date: 2020-12-24 Application Number: 16/447,033 Filing Date: 2019-06-20 Inventor: Berg, Gregor   Wenz, Andre Niklas   Hoeppner, Bernhard   Bodner thomas   Cherepanova, Olga   Steffen, Lasse   Siebert, Jan   Hennemann, David   Schulze, Pascal   Dobler, Konstantin   Kahl, Kris-fillip   Beneke, Paul Udo   Hoberg, Philipp Bernhard   Assignee: SAP SE   IPC: G06F9/455 Abstract: An application server provides an application to client devices. Users of the client devices interact with the application to perform a business process. Data regarding user interactions with the application is transmitted from the client devices to the application server. Based on an analysis of the received data, a bot generation server generates a bot to automate a process step. The bot generation server provides a heatmap user interface (UI) that provides information regarding the process steps. Using the heatmap UI, the administrator selects a process step for automation. In response to the selection, the bot generation server identifies, based on the observed behavior, relationships between input fields, typical values for input fields, typical order of data entry into input fields, or any suitable combination thereof. Based on the identified patterns, the bot generation server generates a bot to automate some or all of the process step.
10
EP3471152A1
METHOD FOR FABRICATING A PLURALITY OF TIME-OF-FLIGHT SENSOR DEVICES
Publication/Patent Number: EP3471152A1 Publication Date: 2019-04-17 Application Number: 17196120.4 Filing Date: 2017-10-12 Inventor: Etschmaier, Harald   Bodner thomas   Assignee: ams AG   IPC: H01L31/173 Abstract: A method for fabricating a plurality of Time-of-Flight sensor devices (1) comprises a step of providing a wafer (100) including a plurality of wafer portions (110) for a respective one of the Time-of-Flight sensor devices (1), wherein each of the wafer portions (110) includes a first light detecting area (10) and a second light detecting area (20) and a respective light emitter device (30). The respective light emitter device (30) and the respective first light detecting area (10) is encapsulated by a first volume (40) of a light transparent material (130), and the respective second light detecting area (20) is encapsulated by a second volume (50) of the light transparent material (130). Before singulation of the devices (1), an opaque material (60) is placed on the wafer portions (110) in a space (120) between the respective first and second volume (40, 50) of the light transparent material (130).
11
WO2019072927A1
METHOD FOR FABRICATING A PLURALITY OF TIME-OF-FLIGHT SENSOR DEVICES
Publication/Patent Number: WO2019072927A1 Publication Date: 2019-04-18 Application Number: 2018077626 Filing Date: 2018-10-10 Inventor: Bodner thomas   Etschmaier, Harald   Assignee: AMS AG   IPC: G01S7/481 Abstract: A method for fabricating a plurality of Time-of-Flight sensor devices (1) comprises a step of providing a wafer (100) including a plurality of wafer portions (110) for a respective one of the Time-of-Flight sensor devices (1), wherein each of the wafer portions (110) includes a first light detecting area (10) and a second light detecting area (20) and a respective light emitter device (30). The respective light emitter device (30) and the respective first light detecting area (10) is encapsulated by a first volume (40) of a light transparent material (130), and the respective second light detecting area (20) is encapsulated by a second volume (50) of the light transparent material (130). Before singulation of the devices (1), an opaque material (60) is placed on the wafer portions (110) in a space (120) between the respective first and second volume (40, 50) of the light transparent material (130).
12
US2019165020A1
METHOD OF PRODUCING AN OPTICAL SENSOR AT WAFER-LEVEL AND OPTICAL SENSOR
Publication/Patent Number: US2019165020A1 Publication Date: 2019-05-30 Application Number: 16/316,724 Filing Date: 2017-08-08 Inventor: Toschkoff, Gregor   Bodner thomas   Schrank, Franz   Assignee: ams AG   IPC: H01L27/146 Abstract: A method is proposed to produce an optical sensor at wafer-level, the methods comprises the following steps. A wafer is provided and has a main top surface and a main back surface. At or near the top surface of the wafer at least one integrated circuit is arranged having a light sensitive component. A first mold tool is placed over the at least one integrated circuit such that at least one channel remains between the first mold tool and the top surface to enter a first mold material. A first mold structure is formed by wafer-level molding the first mold material via the at least one channel. The first mold material creates at least one runner structure. A second mold tool is placed over the first mold structure and a second mold structure is formed by wafer-level molding a second mold material by means of the second mold tool. A light path blocking structure is arranged on the top surface to block light from entering via the at least one runner structure.
13
EP3471132A1
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Publication/Patent Number: EP3471132A1 Publication Date: 2019-04-17 Application Number: 17196160.0 Filing Date: 2017-10-12 Inventor: Bodner thomas   Jessenig, Stefan   Schrank, Franz   Assignee: ams AG   IPC: H01L21/768 Abstract: A method for manufacturing a semiconductor device (10) comprises the steps of providing a semiconductor body (11) with a main plane of extension, and forming a trench (12) in the semiconductor body (11) from a top side (13) of the semiconductor body (11) in a vertical direction (z) which is perpendicular to the main plane of extension of the semiconductor body (11). The method further comprises the steps of coating inner walls (14) of the trench (12) with an isolation layer (15), depositing a metallization layer (16) within the trench (12), and depositing a passivation layer (17) within the trench (12) such that an inner volume (18) of the trench (12) is free of any material, wherein inner surfaces (19) that are adjacent to the inner volume (18) are treated to be hydrophobic at least in places. Furthermore, a semiconductor device (10) is provided.
14
WO2019072970A1
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Publication/Patent Number: WO2019072970A1 Publication Date: 2019-04-18 Application Number: 2018077743 Filing Date: 2018-10-11 Inventor: Schrank, Franz   Jessenig, Stefan   Bodner thomas   Assignee: AMS AG   IPC: H01L23/48 Abstract: A method for manufacturing a semiconductor device (10) comprises the steps of providing a semiconductor body (11) with a main plane of extension, and forming a trench (12) in the semiconductor body (11) from a top side (13) of the semiconductor body (11) in a vertical direction (z) which is perpendicular to the main plane of extension of the semiconductor body (11). The method further comprises the steps of coating inner walls (14) of the trench (12) with an isolation layer (15), depositing a metallization layer (16) within the trench (12), and depositing a passivation layer (17) within the trench (12) such that an inner volume (18) of the trench (12) is free of any material, wherein inner surfaces (19) that are adjacent to the inner volume (18) are treated to be hydrophobic at least in places. Furthermore, a semiconductor device (10) is provided.
15
EP3168603B1
METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT
Publication/Patent Number: EP3168603B1 Publication Date: 2019-06-19 Application Number: 15194108.5 Filing Date: 2015-11-11 Inventor: Richter, Helene   Bodner thomas   Siegert, Jörg   Assignee: ams AG   IPC: G01N21/64
16
EP3261122B1
3D-INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING A 3D-INTEGRATED OPTICAL SENSOR
Publication/Patent Number: EP3261122B1 Publication Date: 2019-10-30 Application Number: 16176222.4 Filing Date: 2016-06-24 Inventor: Enichlmair, Hubert   Schrems, Martin   Toschkoff, Gregor   Bodner thomas   Manninger, Mario   Assignee: ams AG   IPC: H01L27/146
17
EP3166146B1
OPTICAL PACKAGE AND METHOD OF PRODUCING AN OPTICAL PACKAGE
Publication/Patent Number: EP3166146B1 Publication Date: 2019-04-17 Application Number: 15198468.9 Filing Date: 2015-12-08 Inventor: Mehrl, David   Bodner thomas   Toschkoff, Gregor   Etschmaier, Harald   Schrank, Franz   Assignee: ams AG   IPC: H01L25/16 Abstract: An optical package is proposed comprising a carrier (4), an optoelectronic component (2), an aspheric lens (1), and a reflective layer (3). The carrier (4) comprises electrical interconnections (5) and the optoelectric component (2) is arranged for emitting and/or detecting electromagnetic radiation in a specified wavelength range. Furthermore, the optoelectric component (2) is mounted on the carrier (4) or integrated into the carrier (4) and electrically connected to the electric interconnections (5). The aspheric lens (1) has an upper surface (11), a lateral surface (12), and a bottom surface (13) and the bottom surface (13) is arranged on or near the optoelectric component (2). The aspheric lens (1) comprises a material which is at least transparent in the specified wavelength range. The reflective layer (3) comprises a reflective material, wherein the reflective layer at least partly covers the lateral surface (12) of the aspheric lens (1), and wherein the reflective material is at least partly reflective in the specified wavelength range.
18
US2019237500A1
3D-INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING A 3D-INTEGRATED OPTICAL SENSOR
Publication/Patent Number: US2019237500A1 Publication Date: 2019-08-01 Application Number: 16/312,145 Filing Date: 2017-06-02 Inventor: Manninger, Mario   Bodner thomas   Toschkoff, Gregor   Schrems, Martin   Enichlmair, Hubert   Assignee: ams AG   IPC: H01L27/146 Abstract: A 3D-Integrated optical sensor comprises a semiconductor substrate, an integrated circuit, a wiring, a filter layer, a transparent spacer layer, and an on-chip diffuser. The semiconductor substrate has a main surface. The integrated circuit comprises at least one light sensitive area and is arranged in the substrate at or near the main surface. The wiring provides an electrical connection to the integrated circuit and is connected to the integrated circuit. The wiring is arranged on or in the semiconductor substrate. The filter layer has a direction dependent transmission characteristic and is arranged on the integrated circuit. In fact, the filter layer at least covers the light sensitive area. The transparent spacer layer is arranged on the main surface and, at least partly, encloses the filter layer. A spacer thickness is arranged to limit a spectral shift of the filter layer. The on-chip diffuser is arranged on the transparent spacer layer.
19
WO2019076806A1
METHOD FOR MANUFACTURING AN OPTICAL SENSOR AND OPTICAL SENSOR
Publication/Patent Number: WO2019076806A1 Publication Date: 2019-04-25 Application Number: 2018078064 Filing Date: 2018-10-15 Inventor: Schrank, Franz   Schrems, Martin   Siegert, JÖrg   Bodner thomas   Toschkoff, Gregor   Labodi, Miklos   Assignee: AMS AG   IPC: H01L27/146 Abstract: A method for manufacturing an optical sensor (10) is provided. The method comprises providing an optical sensor arrangement (11) which comprises at least two optical sensor elements (12) on a carrier (13), where the optical sensor arrangement (11) comprises a light entrance surface (14) at the side of the optical sensor elements (12) facing away from the carrier (13). The method further comprises forming a trench (15) between two optical sensor elements (12) in a vertical direction (z) which is perpendicular to the main plane of extension of the carrier (13), where the trench (15) extends from the light entrance surface (14) of the sensor arrangement (11) at least to the carrier (13). Moreover, the method comprises coating the trench (15) with an opaque material (16), forming electrical contacts (17) for the at least two optical sensor elements (12) on a back side(18)of the carrier (13) facing away from the optical sensor elements (12), and forming at least one optical sensor (10) by dicing the optical sensor arrangement (11) along the trench (15). Each optical sensor (10) comprises an optical sensor element (12), and the light entrance surface (14) is free of electrical contacts (17) and at least partially free of the opaque material (16) above the optical sensor elements (12). Furthermore, an optical sensor (10) is provided.
20
EP3471146A1
METHOD FOR MANUFACTURING AN OPTICAL SENSOR AND OPTICAL SENSOR
Publication/Patent Number: EP3471146A1 Publication Date: 2019-04-17 Application Number: 17196609.6 Filing Date: 2017-10-16 Inventor: Toschkoff, Gregor   Bodner thomas   Schrank, Franz   Labodi, Miklos   Siegert, Jörg   Schrems, Martin   Assignee: ams AG   IPC: H01L27/146 Abstract: A method for manufacturing an optical sensor (10) is provided. The method comprises providing an optical sensor arrangement (11) which comprises at least two optical sensor elements (12) on a carrier (13), where the optical sensor arrangement (11) comprises a light entrance surface (14) at the side of the optical sensor elements (12) facing away from the carrier (13). The method further comprises forming a trench (15) between two optical sensor elements (12) in a vertical direction (z) which is perpendicular to the main plane of extension of the carrier (13), where the trench (15) extends from the light entrance surface (14) of the sensor arrangement (11) at least to the carrier (13). Moreover, the method comprises coating the trench (15) with an opaque material (16), forming electrical contacts (17) for the at least two optical sensor elements (12) on a back side (18) of the carrier (13) facing away from the optical sensor elements (12), and forming at least one optical sensor (10) by dicing the optical sensor arrangement (11) along the trench (15). Each optical sensor (10) comprises an optical sensor element (12), and the light entrance surface (14) is free of electrical contacts (17) and at least partially free of the opaque material (16) above the optical sensor elements (12). Furthermore, an optical sensor (10) is provided.