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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1 EP3281039B1
SEMICONDUCTOR X-RAY DETECTOR
Publication/Patent Number: EP3281039B1 Publication Date: 2020-03-11 Application Number: 15888101.1 Filing Date: 2015-04-07 Inventor: Cao peiyan   Assignee: Shenzhen Xpectvision Technology Co., Ltd.   IPC: G01T1/16
2 EP3704515A1
RADIATION DETECTOR WITH DC-TO-DC CONVERTER BASED ON MEMS SWITCHES
Publication/Patent Number: EP3704515A1 Publication Date: 2020-09-09 Application Number: 17930322.7 Filing Date: 2017-10-30 Inventor: Cao peiyan   Assignee: Shenzhen Xpectvision Technology Co., Ltd.   IPC: G01T1/24
3 EP3704514A1
DARK NOISE COMPENSATION IN RADIATION DETECTOR
Publication/Patent Number: EP3704514A1 Publication Date: 2020-09-09 Application Number: 17930693.1 Filing Date: 2017-10-30 Inventor: Cao peiyan   Assignee: Shenzhen Xpectvision Technology Co., Ltd.   IPC: G01T1/00
4 US2020064499A1
Semiconductor X-ray Detector
Publication/Patent Number: US2020064499A1 Publication Date: 2020-02-27 Application Number: 16/671,615 Filing Date: 2019-11-01 Inventor: Cao peiyan   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: G01T1/24 Abstract: Disclosed herein is an apparatus comprising: a radiation absorption layer comprising an electrode; a counter configured to register a number of radiation particles absorbed by the radiation absorption layer; a controller configured to start a time delay from a time at which an absolute value of an electrical signal on the electrode equals or exceeds an absolute value of a first threshold; wherein the controller is configured to cause the number registered by the counter to change, in response to the absolute value of the electrical signal equaling or exceeding an absolute value of a second threshold during the time delay.
5 US2020249365A1
RADIATION DETECTOR WITH A DC-TO-DC CONVERTER BASED ON MEMS SWITCHES
Publication/Patent Number: US2020249365A1 Publication Date: 2020-08-06 Application Number: 16/854,053 Filing Date: 2020-04-21 Inventor: Cao peiyan   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: G01T1/24 Abstract: An apparatus suitable for detecting radiation, comprising: a radiation absorption layer comprising a semiconductor, a first electrical contact and a second electrical contact, the first electrical contact positioned across the semiconductor from the second electrical contact; a DC-to-DC converter configured to apply a DC voltage between the first electrical contact and the second electrical contact, the DC-to-DC converter comprising micro-electromechanical switches.
6 US2020250519A1
COMPUTING UNIT
Publication/Patent Number: US2020250519A1 Publication Date: 2020-08-06 Application Number: 16/857,554 Filing Date: 2020-04-24 Inventor: Cao peiyan   Assignee: Shenzhen Genorivision Technology Co., Ltd.   IPC: G06N3/063 Abstract: Disclosed herein is a system, which comprises a plurality of processing units. Each of the processing units comprises a first oscillator, a second oscillator, and a counter. Each of the processing units is configured to receive a first input and a second input and to send an output as a function of the first input and the second input. The function has a plurality of parameters. Each of the processing units is configured to receive and send values of the parameters. The system can be used together with a microprocessor to perform parallel computing.
7 WO2020010589A1
AN APPARATUS FOR BIOPOLYMER SEQUENCING
Publication/Patent Number: WO2020010589A1 Publication Date: 2020-01-16 Application Number: 2018095522 Filing Date: 2018-07-12 Inventor: Cao peiyan   Assignee: SHENZHEN GENORIVISION TECHNOLOGY CO., LTD.   IPC: G01N33/487 Abstract: An apparatus and a method use of it, wherein the apparatus comprising: a plurality of sensors, each of which comprising a nanopore and configured to output an electrical signal depending on an interaction of a chemical compound with the nanopore; a detector configured to receive electrical signals from the sensors through a sacrificial device, wherein the sacrificial device is configured to selectively and irreversibly sever electrical connections between the detector and any of the sensors; and the method including: obtaining an apparatus comprising a plurality of sensors, each of which comprising a nanopore and configured to output an electrical signal depending on an interaction of a chemical compound with the nanopore, a detector configured to receive electrical signals from the sensors; determining a quality of performance of each of the sensors; selecting a subset from the sensors based on the qualities of performance; irreversibly severing electrical connections between the detector and the subset.
8 US2020252561A1
DARK NOISE COMPENSATION IN A RADIATION DETECTOR
Publication/Patent Number: US2020252561A1 Publication Date: 2020-08-06 Application Number: 16/854,068 Filing Date: 2020-04-21 Inventor: Cao peiyan   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: H04N5/361 Abstract: Disclosed herein is a radiation detector, comprising: pixels arranged in an array, the pixels comprising peripheral pixels at a periphery of the array and interior pixels at an interior of the array, each of the pixels configured to generate an electrical signal on an electrode thereof, upon exposure to a radiation; an electronic system configured to provide first compensation to the peripheral pixels for a dark noise of the peripheral pixels and to provide second compensation to the interior pixels for a dark noise of the interior pixels, the first compensation and the second compensation being different.
9 US2020150290A1
RADIATION DETECTOR AND METHODS OF DATA OUTPUT FROM IT
Publication/Patent Number: US2020150290A1 Publication Date: 2020-05-14 Application Number: 16/742,797 Filing Date: 2020-01-14 Inventor: Cao peiyan   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: G01T1/24 Abstract: Disclosed herein is an apparatus suitable for detecting radiation, comprising: a plurality of pixels configured to generate an electric signal upon exposure to a radiation; an electronic system configured to read out the electric signal; wherein the electronic system comprises a first memory and a second memory; wherein the first memory is configured to store a plurality of data bits representing the electric signal generated by the pixel that the first memory is associated with; wherein the electronic system is configured to transmit a subset of bits among the plurality of data bits, from the first memory to the second memory; wherein the electronic system is configured to transmit the subset of bits from the second memory to a bus.
10 EP3658961A1
A RADIATION DETECTORAND METHODS OF DATA OUTPUT FROM IT
Publication/Patent Number: EP3658961A1 Publication Date: 2020-06-03 Application Number: 17918927.9 Filing Date: 2017-07-26 Inventor: Cao peiyan   Assignee: Shenzhen Xpectvision Technology Co., Ltd.   IPC: G01T1/24
11 US2020003914A1
PORTABLE RADIATION DETECTOR SYSTEM
Publication/Patent Number: US2020003914A1 Publication Date: 2020-01-02 Application Number: 16/565,450 Filing Date: 2019-09-09 Inventor: Cao peiyan   Liu, Yurun   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: G01T1/24 Abstract: An apparatus for detecting radiation, comprising: a first radiation absorption layer configured to generate first electrical signals from a photon of the radiation absorbed by the first radiation absorption layer, wherein the first radiation absorption layer comprises a first electrode; an electronic system configured to process the first electrical signals; a counter configured to register a number of photons absorbed by the radiation absorption layer; a controller; the controller is configured to cause the number registered by the counter to increase by one; a power supply; and a communication interface configured for the electronic system to communicate with outside circuitry.
12 US2020150291A1
RADIATION DETECTOR WITH BUILT-IN DEPOLARIZATION DEVICE
Publication/Patent Number: US2020150291A1 Publication Date: 2020-05-14 Application Number: 16/742,814 Filing Date: 2020-01-14 Inventor: Cao peiyan   Liu, Yurun   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: G01T1/24 Abstract: Disclosed herein is a radiation detector configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate positive charge carriers and negative charge carriers in the semiconductor single crystal. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The radiation detector comprises a first electrical contact in electrical contact with the semiconductor single crystal and a second electrical contact surrounding the first electrical contact or the semiconductor single crystal. The first electrical contact is configured to collect the negative charge carriers. The second electrical contact is configured to cause the positive charge carriers to drift out of the semiconductor single crystal.
13 EP3658032A1
X-RAY IMAGING SYSTEM AND METHOD OF X-RAY IMAGE TRACKING
Publication/Patent Number: EP3658032A1 Publication Date: 2020-06-03 Application Number: 17918811.5 Filing Date: 2017-07-26 Inventor: Cao peiyan   Liu, Yurun   Assignee: Shenzhen Xpectvision Technology Co., Ltd.   IPC: A61B6/03
14 EP3658030A1
AN INTEGRATED X-RAY SOURCE
Publication/Patent Number: EP3658030A1 Publication Date: 2020-06-03 Application Number: 17919529.2 Filing Date: 2017-07-26 Inventor: Cao peiyan   Liu, Yurun   Assignee: Shenzhen Xpectvision Technology Co., Ltd.   IPC: A61B6/00
15 WO2020010590A1
IMAGE SENSORS WITH SILVER-NANOPARTICLE ELECTRODES
Publication/Patent Number: WO2020010590A1 Publication Date: 2020-01-16 Application Number: 2018095523 Filing Date: 2018-07-12 Inventor: Liu, Yurun   Cao peiyan   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: H01L31/107 Abstract: An apparatus comprising: an array of avalanche photodiodes (APDs) (350) or an absorption region (210, 310) comprising a semiconductor single crystal (406) such as a CdZnTe single crystal or a CdTe single crystal. The apparatus may be configured to absorb radiation particles incident on an absorption region (210, 310) of the APDs (350) or the semiconductor single crystal (406) and to generate charge carriers. The apparatus may comprise an electrode (301, 304, 419A, 419B, 501) comprising silver nanoparticles (322, 422, 522) and being electrically connected to the absorption region (210, 310) of the APDs (350) or the semiconductor single crystal (406). For the APDs (350), each of the APDs (350) may comprise an amplification region (220,320), which may comprise a junction (315) with an electric field in the junction (315). The electric field may be at a value sufficient to cause an avalanche of charge carriers entering the amplification region (220,320), but not sufficient to make the avalanche self-sustaining. The junctions (315) of the APDs (350) may be discrete.
16 WO2020010588A1
A LIGHT SCANNER
Publication/Patent Number: WO2020010588A1 Publication Date: 2020-01-16 Application Number: 2018095521 Filing Date: 2018-07-12 Inventor: Liu, Yurun   Cao peiyan   Assignee: SHENZHEN GENORIVISION TECHNOLOGY CO., LTD.   IPC: G02B26/10 Abstract: Disclosed herein is an apparatus suitable for light scanning (100). The apparatus (100) comprises a light source (102) and a photonic crystal (104). The light source (102) is configured to direct a light beam along an optical axis (105) toward the photonic crystal (104). The photonic crystal (104) is configured to direct the light beam along a direction at an angle relative to the optical axis (105). The angle is a function of wavelength of the light beam. The apparatus (100) may also comprise a partial toroid lens (106) configured to diverge the light beam received from the photonic crystal (104). The light source (102) of the apparatus (100) may be configured to change the wavelength continuously across a range of wavelengths.
17 EP3701311A1
A LIDAR LIGHT SOURCE
Publication/Patent Number: EP3701311A1 Publication Date: 2020-09-02 Application Number: 17930021.5 Filing Date: 2017-10-26 Inventor: Cao peiyan   Liu, Yurun   Assignee: Shenzhen Genorivision Technology Co. Ltd.   IPC: G02B26/10
18 US10670527B2
Biosensor
Publication/Patent Number: US10670527B2 Publication Date: 2020-06-02 Application Number: 15/309,303 Filing Date: 2015-09-14 Inventor: Cao peiyan   Liu, Yurun   Assignee: Shenzhen Genorivision Technology Co., Ltd.   IPC: G01N21/00 Abstract: Disclosed herein is an apparatus comprising: a probe carrier comprising: a substrate comprising with holes through a thickness of the substrate and a transparent window across an opening of each of the holes, wherein the transparent window closes the opening, wherein one or more locations on the transparent window are configured to have probes attached thereto, wherein interaction between the probes and an analyte generates a signal; an optical system comprising a plurality of collimators; a sensor configured to detect the signal; wherein the collimators can essentially prevent light from passing if a deviation of a propagation direction of the light from an optical axis of the collimators is greater than a threshold. Because the probe carrier is separate and independent from the microarray, the probe carrier may be assembled with a pre-existing microarray prior to its use, and be detached from the microarray and disposed after its use.
19 US2020152820A1
RADIATION DETECTOR AND A METHOD OF MAKING IT
Publication/Patent Number: US2020152820A1 Publication Date: 2020-05-14 Application Number: 16/742,803 Filing Date: 2020-01-14 Inventor: Cao peiyan   Liu, Yurun   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: H01L31/18 Abstract: Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers.. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.
20 US2020161075A1
INTEGRATED X-RAY SOURCE
Publication/Patent Number: US2020161075A1 Publication Date: 2020-05-21 Application Number: 16/742,733 Filing Date: 2020-01-14 Inventor: Cao peiyan   Liu, Yurun   Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.   IPC: H01J35/06 Abstract: Disclosed herein is an X-ray source, comprising: a cathode in a recess of a first substrate; a counter electrode on a sidewall of the recess, configured to cause field emission of electrons from the cathode; and a metal anode configured to receive the electrons emitted from the cathode and to emit X-ray from impact by the electrons on the metal anode.