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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
EP2889901B1
Semiconductor device with through-substrate via and corresponding method
Publication/Patent Number: EP2889901B1 Publication Date: 2021-02-03 Application Number: 13199683.7 Filing Date: 2013-12-27 Inventor: Schrank, Franz   Carniello, Sara   Enichlmair, Hubert   Kraft, Jochen   Löffler, Bernhard   Holzhaider, Rainer   Assignee: ams AG   IPC: H01L21/768
2
US10234332B2
Bolometer and method for measurement of electromagnetic radiation
Publication/Patent Number: US10234332B2 Publication Date: 2019-03-19 Application Number: 15/341,963 Filing Date: 2016-11-02 Inventor: Roehrer, Georg   Carniello, Sara   Assignee: ams AG   IPC: G01J5/02 Abstract: A bolometer (10) comprises a first and a second suspension beam (12, 13) and a semiconductor portion (11) that is suspended by the first and the second suspension beam (12, 13) and comprises a first region (17) of a first conductivity type and a second region (18) of a second conductivity type. The first region (17) comprises a first triangle (21) or at least two stripes (40, 41) or islands (60, 61) which each contribute to a non-short-circuited diode (20) with the second region (18).
3
US10468541B2
Semiconductor device with through-substrate via and corresponding method of manufacture
Publication/Patent Number: US10468541B2 Publication Date: 2019-11-05 Application Number: 15/107,901 Filing Date: 2014-12-12 Inventor: Schrank, Franz   Carniello, Sara   Enichlmair, Hubert   Kraft, Jochen   Loeffler, Bernhard   Holzhaider, Rainer   Assignee: ams AG   IPC: H01L31/0224 Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
4
EP2908341B1
Semiconductor device with surface integrated focusing element
Publication/Patent Number: EP2908341B1 Publication Date: 2018-07-11 Application Number: 14155574.8 Filing Date: 2014-02-18 Inventor: Minixhofer, Rainer   Schrems, Martin   Carniello, Sara   Assignee: ams AG   IPC: H01L27/146 Abstract: The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element is preferably arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance.
5
US9947711B2
Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element
Publication/Patent Number: US9947711B2 Publication Date: 2018-04-17 Application Number: 15/119,377 Filing Date: 2015-02-10 Inventor: Carniello, Sara   Schrems, Martin   Minixhofer, Rainer   Assignee: AMS AG   IPC: H01L27/32 Abstract: The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (17) comprising recesses (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element (17) is formed by etching the recesses (4) into the semiconductor material.
6
US2017074725A1
BOLOMETER AND METHOD FOR MEASUREMENT OF ELECTROMAGNETIC RADIATION
Publication/Patent Number: US2017074725A1 Publication Date: 2017-03-16 Application Number: 15/341,963 Filing Date: 2016-11-02 Inventor: Roehrer, Georg   Carniello, Sara   Assignee: ams AG   IPC: G01J5/02 Abstract: A bolometer (10) comprises a first and a second suspension beam (12, 13) and a semiconductor portion (11) that is suspended by the first and the second suspension beam (12, 13) and comprises a first region (17) of a first conductivity type and a second region (18) of a second conductivity type. The first region (17) comprises a first triangle (21) or at least two stripes (40, 41) or islands (60, 61) which each contribute to a non-short-circuited diode (20) with the second region (18).
7
DE112015002133T5
Bolometer und Verfahren zur Messung elektromagnetischer Strahlung
Title (English): The Claimant stated that, however, it could also be said that,
Publication/Patent Number: DE112015002133T5 Publication Date: 2017-03-02 Application Number: 112015002133 Filing Date: 2015-04-27 Inventor: Carniello, Sara   RÖhrer, Georg   Assignee: AMS AG   IPC: G01J5/02 Abstract: Ein Bolometer (10) umfasst einen ersten und einen zweiten Hängeträger (12
8
US2017062504A1
SEMICONDUCTOR DEVICE WITH SURFACE INTEGRATED FOCUSING ELEMENT AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH FOCUSING ELEMENT
Publication/Patent Number: US2017062504A1 Publication Date: 2017-03-02 Application Number: 15/119,377 Filing Date: 2015-02-10 Inventor: Minixhofer, Rainer   Schrems, Martin   Carniello, Sara   Assignee: ams AG   IPC: H01L27/146 Abstract: The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (17) comprising recesses (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element (17) is formed by etching the recesses (4) into the semiconductor material.
9
US2016322519A1
SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND CORRESPONDING METHOD OF MANUFACTURE
Publication/Patent Number: US2016322519A1 Publication Date: 2016-11-03 Application Number: 15/107,901 Filing Date: 2014-12-12 Inventor: Schrank, Franz   Carniello, Sara   Enichlmair, Hubert   Kraft, Jochen   Loeffler, Bernhard   Holzhaider, Rainer   Assignee: AMS AG   IPC: H01L31/0224 Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
10
EP2942609A1
Bolometer and method for measurement of electromagnetic radiation
Publication/Patent Number: EP2942609A1 Publication Date: 2015-11-11 Application Number: 14167385.5 Filing Date: 2014-05-07 Inventor: RÖhrer, Georg   Carniello, Sara   Assignee: ams AG   IPC: G01J5/02 Abstract: A bolometer (10) comprises a first and a second suspension beam (12, 13) and a semiconductor portion (11) that is suspended by the first and the second suspension beam (12, 13) and comprises a first region (17) of a first conductivity type and a second region (18) of a second conductivity type. The first region (17) comprises a first triangle (21) or at least two stripes (40, 41) or islands (60, 61) which each contribute to a non-short-circuited diode (20) with the second region (18).
11
WO2015169627A1
BOLOMETER AND METHOD FOR MEASUREMENT OF ELECTROMAGNETIC RADIATION
Publication/Patent Number: WO2015169627A1 Publication Date: 2015-11-12 Application Number: 2015059058 Filing Date: 2015-04-27 Inventor: Carniello, Sara   RÖhrer, Georg   Assignee: AMS AG   IPC: G01J5/02 Abstract: A bolometer (10) comprises a first and a second suspension beam (12
12
EP2908341A1
Semiconductor device with surface integrated focusing element
Publication/Patent Number: EP2908341A1 Publication Date: 2015-08-19 Application Number: 14155574.8 Filing Date: 2014-02-18 Inventor: Minixhofer, Rainer   Schrems, Martin   Carniello, Sara   Assignee: ams AG   IPC: H01L27/146 Abstract: The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element is preferably arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance.
13
EP2793254B1
Semiconductor device with through-substrate via of enhanced conductivity and corresponding fabrication method
Publication/Patent Number: EP2793254B1 Publication Date: 2015-10-21 Application Number: 13163968.4 Filing Date: 2013-04-16 Inventor: Kraft, Jochen   Schrems, Martin   Carniello, Sara   Assignee: AMS AG   IPC: H01L21/74 Abstract: The semiconductor device comprises a substrate (1) with an upper surface (20), the substrate (1) including a semiconductor layer (3), a connection pad (7) below the semiconductor layer (3) opposite the upper surface (20), a via opening (9) with a sidewall (19) in the semiconductor layer (3) above the connection pad (7), and an electrically conductive via layer (6) arranged at the sidewall (19) and in contact with the connection pad (7). An electrically conductive upper via layer (26) is arranged at the sidewall (19) on or above the via layer (6) and is electrically conductively connected to the connection pad (7).
14
WO2015124465A1
SEMICONDUCTOR DEVICE WITH SURFACE INTEGRATED FOCUSING ELEMENT AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH FOCUSING ELEMENT
Publication/Patent Number: WO2015124465A1 Publication Date: 2015-08-27 Application Number: 2015052765 Filing Date: 2015-02-10 Inventor: Schrems, Martin   Minixhofer, Rainer   Carniello, Sara   Assignee: AMS AG   IPC: H01L27/146 Abstract: The semiconductor device comprises a semiconductor substrate (I)
15
WO2015097002A1
SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND CORRESPONDING METHOD OF MANUFACTURE
Publication/Patent Number: WO2015097002A1 Publication Date: 2015-07-02 Application Number: 2014077587 Filing Date: 2014-12-12 Inventor: Schrank, Franz   Kraft, Jochen   Enichlmair, Hubert   Carniello, Sara   LÖffler, Bernhard   Holzhaider, Rainer   Assignee: AMS AG   IPC: H01L21/768 Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1)
16
EP2889901A1
Semiconductor device with through-substrate via and method of producing a semiconductor device with through-substrate via
Publication/Patent Number: EP2889901A1 Publication Date: 2015-07-01 Application Number: 13199683.7 Filing Date: 2013-12-27 Inventor: Schrank, Franz   Carniello, Sara   Enichlmair, Hubert   Kraft, Jochen   Löffler, Bernhard   Holzhaider, Rainer   Assignee: ams AG   IPC: H01L21/768 Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
17
EP2793254A1
Semiconductor device with through-substrate via of enhanced conductivity and corresponding fabrication method
Publication/Patent Number: EP2793254A1 Publication Date: 2014-10-22 Application Number: 13163968.4 Filing Date: 2013-04-16 Inventor: Kraft, Jochen   Carniello, Sara   Schrems, Martin   Assignee: AMS AG   IPC: H01L21/768 Abstract: The semiconductor device comprises a substrate (1) with an upper surface (20), the substrate (1) including a semiconductor layer (3), a connection pad (7) below the semiconductor layer (3) opposite the upper surface (20), a via opening (9) with a sidewall (19) in the semiconductor layer (3) above the connection pad (7), and an electrically conductive via layer (6) arranged at the sidewall (19) and in contact with the connection pad (7). An electrically conductive upper via layer (26) is arranged at the sidewall (19) on or above the via layer (6) and is electrically conductively connected to the connection pad (7).
18
US8658534B2
Method for producing a semiconductor component, and semiconductor component
Publication/Patent Number: US8658534B2 Publication Date: 2014-02-25 Application Number: 13/054,614 Filing Date: 2009-06-25 Inventor: Schrank, Franz   Koppitsch, Günther   Beutl, Michael   Carniello, Sara   Kraft, Jochen   Assignee: AMS AG   IPC: H01L21/44 Abstract: In an insulation layer of an SOI substrate, a connection pad is arranged. A contact hole opening above the connection pad is provided on side walls and on the connection pad with a metallization that is contacted on top side with a top metal.
19
DE102009038938B4
Verfahren zur Herstellung eines vertikalen Hall-Sensors
Title (English): Preparation method of Vertical Hall Senso
Publication/Patent Number: DE102009038938B4 Publication Date: 2013-10-10 Application Number: 102009038938 Filing Date: 2009-08-26 Inventor: Schrems, Martin Dr   Carniello, Sara   Assignee: Austriamicrosystems AG   IPC: H01L43/06 Abstract: Verfahren zur Herstellung eines vertikalen Hall-Sensors
20
US8368390B2
Vertical hall sensor and method for manufacturing a vertical hall sensor
Publication/Patent Number: US8368390B2 Publication Date: 2013-02-05 Application Number: 12/869,651 Filing Date: 2010-08-26 Inventor: Schrems, Martin   Carniello, Sara   Assignee: Austriamicrosystems AG   IPC: G01B7/14 Abstract: A well (2) doped for a conductivity type and provided as the sensor region is formed in a substrate (1) made of semiconductor material. Contact regions (4), arranged spaced apart from one another and doped for the same conductivity type as the well (2), are formed in a cover layer (3) that delimits the region with the conductivity type of the well. The contact areas (4) are electroconductively connected to the well (2) and provided for terminal contacts (6).
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