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1 US2020203401A1
IMAGE SENSOR
Publication/Patent Number: US2020203401A1 Publication Date: 2020-06-25 Application Number: 16/719,558 Filing Date: 2019-12-18 Inventor: Frey, Laurent   Cazaux, Yvon   Assignee: Commissariat à I'Énergie Atomique et aux Énergies Alternatives   IPC: H01L27/146 Abstract: An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, a portion of the absorbing layer made of a material different from that of the semiconductor region, the absorbing layer being capable of absorbing, in a single passage, more than 30% of an incident radiation at the central wavelength of the pass band or of the stop band of the interference filter. An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor ...More Less
2 EP2636068B1
MONOLITHIC MULTISPECTRAL VISIBLE-AND-INFRARED IMAGER
Publication/Patent Number: EP2636068B1 Publication Date: 2020-03-11 Application Number: 11787702.7 Filing Date: 2011-11-03 Inventor: Giffard, Benoit   Cazaux, Yvon   Moussy, Norbert   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H01L27/146
3 US10613202B2
Time-of-flight detection pixel
Publication/Patent Number: US10613202B2 Publication Date: 2020-04-07 Application Number: 16/194,985 Filing Date: 2018-11-19 Inventor: Roy, Francois   Goncalves, Boris Rodrigues   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/486 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
4 US2019393253A1
IMAGE SENSOR
Publication/Patent Number: US2019393253A1 Publication Date: 2019-12-26 Application Number: 16/445,361 Filing Date: 2019-06-19 Inventor: Cazaux, Yvon   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H01L27/146 Abstract: An image sensor including a plurality of pixels, each pixel including a photogate detector coupled to a readout circuit via a first conductive transfer gate, wherein the photogate detector and the first transfer gate are formed inside and on top of a first semiconductor substrate, and the readout circuit is formed inside and on top of a second semiconductor substrate arranged on the first substrate, the sensor being intended to be illuminated on the side of the surface of the first substrate opposite to the second substrate. An image sensor including a plurality of pixels, each pixel including a photogate detector coupled to a readout circuit via a first conductive transfer gate, wherein the photogate detector and the first transfer gate are formed inside and on top of a first semiconductor ...More Less
5 US10264242B2
Image sensor for capturing 2D image and depth
Publication/Patent Number: US10264242B2 Publication Date: 2019-04-16 Application Number: 15/829,662 Filing Date: 2017-12-01 Inventor: Cazaux, Yvon   Giffard, Benoit   Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES   IPC: H04N13/286 Abstract: The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); and a third memory (mem3) electrically coupled to the detection zone by a third gate (316), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (404, 406), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (P1 to P8) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels. The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); ...More Less
6 EP3503192A1
DEVICE FOR ACQUIRING A 2D IMAGE AND A DEPTH IMAGE OF A SCENE
Publication/Patent Number: EP3503192A1 Publication Date: 2019-06-26 Application Number: 18208212.3 Filing Date: 2018-11-26 Inventor: Vaillant, Jérôme   Cazaux, Yvon   Rochas, Alexis   Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: H01L27/146 Abstract: L'invention concerne un dispositif d'acquisition d'une image 2D et d'une image de profondeur, comprenant : un premier capteur (C1) comportant une face avant et une face arrière, le premier capteur étant formé dans et sur un premier substrat semiconducteur (100) et comprenant une pluralité de pixels d'image 2D (P1) et une pluralité de fenêtres transmissives (F) ; et un deuxième capteur (C2) comportant une face avant accolée à la face arrière du premier capteur et une face arrière opposée au premier capteur, le deuxième capteur étant formé dans et sur un deuxième substrat semiconducteur (130) et comprenant une pluralité de pixels de profondeur (P2) disposés en regard des fenêtres du premier capteur. L'invention concerne un dispositif d'acquisition d'une image 2D et d'une image de profondeur, comprenant : un premier capteur (C1) comportant une face avant et une face arrière, le premier capteur étant formé dans et sur un premier substrat semiconducteur (100) et comprenant une ...More Less
7 US10170513B2
Image sensor with vertical electrodes
Publication/Patent Number: US10170513B2 Publication Date: 2019-01-01 Application Number: 15/713,639 Filing Date: 2017-09-23 Inventor: Cazaux, Yvon   Roy, François   Guillon, Marie   Laflaquiere, Arnaud   Assignee: Commissariat à l'Energie Atomique et aux Energies   STMICROELECTRONICS (CROLLES 2) SAS   STMICROELECTRONICS (GRENOBLE 2) SAS   IPC: H01L27/146 Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening. An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and ...More Less
8 US10488499B2
Time-of-flight detection pixel
Publication/Patent Number: US10488499B2 Publication Date: 2019-11-26 Application Number: 15/387,883 Filing Date: 2016-12-22 Inventor: Roy, Francois   Guillon, Marie   Cazaux, Yvon   Rodrigues, Boris   Rochas, Alexis   Assignee: STMicroelectronics (Crolles 2) SAS   Commissariat A L'Energie Atomique et aux Energies Alternatives   IPC: G01S7/486 Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate. A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped ...More Less
9 US2019191067A1
DEVICE FOR ACQUIRING A 2D IMAGE AND A DEPTH IMAGE OF A SCENE
Publication/Patent Number: US2019191067A1 Publication Date: 2019-06-20 Application Number: 16/208,712 Filing Date: 2018-12-04 Inventor: Vaillant, Jérôme   Cazaux, Yvon   Rochas, Alexis   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H04N5/225 Abstract: A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of transmissive windows; and a second sensor including a front surface placed against the rear surface of the first sensor and a rear surface opposite to the first sensor, the second sensor being formed inside and on top of a second semiconductor substrate and comprising a plurality of depth pixels arranged opposite the windows of the first sensor. A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of ...More Less
10 US2019086519A1
TIME-OF-FLIGHT DETECTION PIXEL
Publication/Patent Number: US2019086519A1 Publication Date: 2019-03-21 Application Number: 16/194,985 Filing Date: 2018-11-19 Inventor: Roy, Francois   Rodrigues, Goncalves Boris   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/486 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
11 US2018167606A1
IMAGE SENSOR FOR CAPTURING 2D IMAGE AND DEPTH
Publication/Patent Number: US2018167606A1 Publication Date: 2018-06-14 Application Number: 15/829,662 Filing Date: 2017-12-01 Inventor: Giffard, Benoît   Cazaux, Yvon   Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: H04N5/33 Abstract: The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); and a third memory (mem3) electrically coupled to the detection zone by a third gate (316), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (404, 406), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (P1 to P8) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels. The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); ...More Less
12 EP3013037B1
PIXEL OF IMAGE SENSOR HAVING MULTIPLE DETECTION NODE GAINS
Publication/Patent Number: EP3013037B1 Publication Date: 2018-06-27 Application Number: 15190265.7 Filing Date: 2015-10-16 Inventor: Guillon, Marie   Cazaux, Yvon   Segura, Puchades Josep   Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES   IPC: H04N5/355 Abstract: L'invention concerne un capteur d'image comprenant : au moins un pixel comportant une photodiode (PD) ; un noeud de détection (SN) couplé à la photodiode par l'intermédiaire d'une porte de transfert (104) ; et un autre noeud (AN) couplé au noeud de détection (SN) par l'intermédiaire d'un premier transistor (112) ; et un circuit de commande (120) adapté à : appliquer, pendant une opération de réinitialisation des niveaux de tension sur le noeud de détection (SN) et l'autre noeud (AN), un premier niveau de tension (VDD) à un noeud de commande du premier transistor (112) ; et appliquer, pendant une opération de transfert de charge à partir de la photodiode (PD) vers le noeud de détection (SN), un deuxième niveau de tension (VSK) au noeud de commande du premier transistor (112), le deuxième niveau de tension étant inférieur au premier niveau de tension et supérieur à une tension de masse du pixel. L'invention concerne un capteur d'image comprenant : au moins un pixel comportant une photodiode (PD) ; un noeud de détection (SN) couplé à la photodiode par l'intermédiaire d'une porte de transfert (104) ; et un autre noeud (AN) couplé au noeud de détection (SN) par ...More Less
13 EP2636066B1
VISIBLE AND NEAR-INFRARED RADIATION DETECTOR
Publication/Patent Number: EP2636066B1 Publication Date: 2018-09-05 Application Number: 11785716.9 Filing Date: 2011-11-03 Inventor: Cazaux, Yvon   Giffard, Benoit   Hugon, Xavier   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H01L27/146
14 US9880057B2
Visible and near-infrared radiation detector
Publication/Patent Number: US9880057B2 Publication Date: 2018-01-30 Application Number: 13/882,944 Filing Date: 2011-11-03 Inventor: Cazaux, Yvon   Giffard, Benoit   Hugon, Xavier   Assignee: Cazaux, Yvon   Giffard, Benoit   Hugon, Xavier   Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: G01J5/08 Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive ...More Less
15 US10162048B2
Time-of-flight detection pixel
Publication/Patent Number: US10162048B2 Publication Date: 2018-12-25 Application Number: 15/392,032 Filing Date: 2016-12-28 Inventor: Roy, Francois   Rodrigues, Boris   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/48 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
16 US9917124B2
Image sensor with vertical electrodes
Publication/Patent Number: US9917124B2 Publication Date: 2018-03-13 Application Number: 14/919,836 Filing Date: 2015-10-22 Inventor: Guillon, Marie   Laflaquiere, Arnaud   Roy, François   Cazaux, Yvon   Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: H01L27/12 Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening. An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and ...More Less
17 US2018012925A1
IMAGE SENSOR WITH VERTICAL ELECTRODES
Publication/Patent Number: US2018012925A1 Publication Date: 2018-01-11 Application Number: 15/713,639 Filing Date: 2017-09-23 Inventor: Cazaux, Yvon   Roy, Francois   Martin, Jean-luc   Segura, Puchades Josep   Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: H01L27/12 Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening. An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and ...More Less
18 EP3188238B1
PIXEL FOR DETECTING FLIGHT TIME
Publication/Patent Number: EP3188238B1 Publication Date: 2018-04-25 Application Number: 16203843.4 Filing Date: 2016-12-13 Inventor: Roy, François   Guillon, Marie   Cazaux, Yvon   Rodrigues, Boris   Rochas, Alexis   Assignee: STMicroelectronics (Crolles 2) SAS   COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES   IPC: H01L27/146 Abstract: L'invention concerne un pixel (40) de détection de temps de vol comprenant une zone photosensible (PD) comportant une première couche (43) dopée N1 ; une zone de collection de charges (47) s'étendant dans la première couche et étant plus fortement dopée N2 que la première couche ; au moins deux zones de stockage de charges (mem1, mem2, mem3, mem4) s'étendant à partir de la zone de collection et comprenant chacune un premier caisson (51) plus fortement dopé N3 que la zone de collection et séparé de ladite zone de collection par une première portion (59) de la première couche revêtue d'une première grille (61), chaque zone de stockage de charges étant délimitée latéralement par deux électrodes conductrices isolées (53), parallèles et en vis-à-vis ; et une deuxième couche (45) fortement dopée P+ revêtant le pixel à l'exception de chaque portion (59, 65) de la première couche revêtue d'une grille (61, 67). L'invention concerne un pixel (40) de détection de temps de vol comprenant une zone photosensible (PD) comportant une première couche (43) dopée N1 ; une zone de collection de charges (47) s'étendant dans la première couche et étant plus fortement dopée N2 que la première couche ...More Less
19 EP2752878B1
Image sensor
Publication/Patent Number: EP2752878B1 Publication Date: 2017-09-06 Application Number: 13199817.1 Filing Date: 2013-12-30 Inventor: Cazaux, Yvon   Roy, Francois   Assignee: STMicroelectronics SA   Commissariat à l'énergie atomique et aux énergies alternatives   IPC: H01L27/146 Abstract: The sensor has a set of pixels (200) arranged inside and on top of a semiconductor substrate (201), where each pixel has a photosensitive area (205), a read area, and a storage area (207) extending between the photosensitive area and the read area. A first insulated vertical electrode (203) extends in the substrate between the photosensitive area and the storage area. A second insulated vertical electrode (209) extends in the substrate between the storage area and the read area. The photosensitive area is partially delimited by a third insulated vertical electrode (202). The sensor has a set of pixels (200) arranged inside and on top of a semiconductor substrate (201), where each pixel has a photosensitive area (205), a read area, and a storage area (207) extending between the photosensitive area and the read area. A first insulated vertical ...More Less
20 EP2398230B1
Linear image sensor using CMOS technology
Publication/Patent Number: EP2398230B1 Publication Date: 2017-05-03 Application Number: 11354031.4 Filing Date: 2011-05-26 Inventor: Giffard, Benoit   Cazaux, Yvon   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H04N5/372 Abstract: The image sensor has matrix of photosensitive pixels (10) which are organized in rows and columns. The analog-to-digital converters are provided for each column and receiving outputs of pixels of column through column bus. A control circuit is configured to organize read of pixels on column busses and write of outputs of converters respectively in memory cell matrices so as to store accumulated brightness levels of rows of pixel matrix portions in row of memory cell matrixes. An adder is connected to sum levels accumulated in row of memory cell matrixes. An independent claim is included for method for managing time-delay-integration image sensor. The image sensor has matrix of photosensitive pixels (10) which are organized in rows and columns. The analog-to-digital converters are provided for each column and receiving outputs of pixels of column through column bus. A control circuit is configured to organize read of ...More Less