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1
US10963713B2
Electronic device and biological monitoring method using the same
Publication/Patent Number: US10963713B2 Publication Date: 2021-03-30 Application Number: 16/158,289 Filing Date: 2018-10-11 Inventor: Shen, Chih-teng   Chang cheng wei   Assignee: Wistron Corporation   IPC: G06K9/00 Abstract: An electronic device is disclosed. The electronic device includes a wireless module configured to emit a first radar signal and receive a second radar signal, which is the first radar signal reflected by a user; a gravity sensor configured to sense a status of the electronic device to generate a sensing result; and a control unit coupled to the wireless module and the gravity sensor, and configured to control the wireless module to emit the first radar signal when the sensing result conforms to an emitting condition and determine a physiological status of the user according to the second radar signal received by the wireless module.
2
US10915147B2
Portable electronic device and method of controlling an image of a display module
Publication/Patent Number: US10915147B2 Publication Date: 2021-02-09 Application Number: 16/197,286 Filing Date: 2018-11-20 Inventor: Liang, Chen Yi   Yang, Keng-hsien   Ho, Hsin Ting   Chang cheng wei   Liao, Fang-wen   Assignee: WISTRON CORP.   IPC: G06F1/16 Abstract: A portable electronic device is provided and includes a first display module, a second display module, a keyboard device, a sensing unit and a control unit. The second display module is pivotally connected to the first display module. The sensing unit is configured to sense a position of the keyboard device relative to the second display module to output a sensing signal. The control unit is configured to control a displaying image of the second display module according to the sensing signal.
3
US2021013033A1
Conductive Feature Formation and Structure
Publication/Patent Number: US2021013033A1 Publication Date: 2021-01-14 Application Number: 17/036,734 Filing Date: 2020-09-29 Inventor: Chang cheng wei   Hung, Min-hsiu   Huang, Hung-yi   Wang, Chun Chieh   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/02 Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
4
US2021098366A1
MIDDLE-OF-LINE INTERCONNECT STRUCTURE AND MANUFACTURING METHOD
Publication/Patent Number: US2021098366A1 Publication Date: 2021-04-01 Application Number: 16/844,133 Filing Date: 2020-04-09 Inventor: Chang cheng wei   Wang, Sung-li   Liu, Yi-ying   Chu, Chia-hung   Lee, Fang-wei   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L23/522 Abstract: In some embodiments, the present disclosure relates to an integrated circuit device. A transistor structure includes a gate electrode separated from a substrate by a gate dielectric and a pair of source/drain regions disposed within the substrate on opposite sides of the gate electrode. A lower conductive plug is disposed through a lower inter-layer dielectric (ILD) layer and contacting a first source/drain region. A capping layer is disposed directly on the lower conductive plug. An upper inter-layer dielectric (ILD) layer is disposed over the capping layer and the lower ILD layer. An upper conductive plug is disposed through the upper ILD layer and directly on the capping layer.
5
US2020012874A1
ELECTRONIC DEVICE AND BIOLOGICAL MONITORING METHOD USING THE SAME
Publication/Patent Number: US2020012874A1 Publication Date: 2020-01-09 Application Number: 16/158,289 Filing Date: 2018-10-11 Inventor: Shen, Chih-teng   Chang cheng wei   Assignee: Wistron Corporation   IPC: G06K9/00 Abstract: An electronic device is disclosed. The electronic device includes a wireless module configured to emit a first radar signal and receive a second radar signal, which is the first radar signal reflected by a user; a gravity sensor configured to sense a status of the electronic device to generate a sensing result; and a control unit coupled to the wireless module and the gravity sensor, and configured to control the wireless module to emit the first radar signal when the sensing result conforms to an emitting condition and determine a physiological status of the user according to the second radar signal received by the wireless module.
6
US10741915B2
Antenna structure and mobile device
Publication/Patent Number: US10741915B2 Publication Date: 2020-08-11 Application Number: 16/278,340 Filing Date: 2019-02-18 Inventor: Chen, Wei-chen   Chang cheng wei   Assignee: WISTRON NEWEB CORP.   IPC: H01Q1/24 Abstract: An antenna structure includes a metal mechanism element, a ground element, a feeding radiation element, a coupling element, a dielectric substrate, and a switchable circuit. The metal mechanism element has a slot. The feeding radiation element extends across the slot. A coupling gap is formed between the feeding radiation element and the coupling element. The feeding radiation element and the coupling element are disposed on the dielectric substrate. The switchable circuit includes a first metal element, a second metal element, a reactance element, a capacitor, and a diode. The first metal element is coupled to the coupling element. The reactance element is embedded in the first metal element. The second metal element is coupled through the capacitor to the ground element. The diode is coupled between the first metal element and the second metal element. The diode is turned on or off according to the control voltage difference.
7
US202012874A1
ELECTRONIC DEVICE AND BIOLOGICAL MONITORING METHOD USING THE SAME
Publication/Patent Number: US202012874A1 Publication Date: 2020-01-09 Application Number: 20/181,615 Filing Date: 2018-10-11 Inventor: Chang cheng wei   Shen, Chih-teng   Assignee: Wistron Corporation   IPC: G06K9/00 Abstract: An electronic device is disclosed. The electronic device includes a wireless module configured to emit a first radar signal and receive a second radar signal, which is the first radar signal reflected by a user; a gravity sensor configured to sense a status of the electronic device to generate a sensing result; and a control unit coupled to the wireless module and the gravity sensor, and configured to control the wireless module to emit the first radar signal when the sensing result conforms to an emitting condition and determine a physiological status of the user according to the second radar signal received by the wireless module.
8
EP3590419A1
ELECTRONIC DEVICE AND BIOLOGICAL MONITORING METHOD USING THE SAME
Publication/Patent Number: EP3590419A1 Publication Date: 2020-01-08 Application Number: 18204073.3 Filing Date: 2018-11-02 Inventor: Shen, Chih-teng   Chang cheng wei   Assignee: Wistron Corporation   IPC: A61B5/00 Abstract: An electronic device (104) includes a wireless module (106) configured to emit a first radar signal (R1) and receive a second radar signal (R2), which is the first radar signal (R1) reflected by a user; a gravity sensor (110) configured to sense a status of the electronic device (104) to generate a sensing result (SR); and a control unit (108) coupled to the wireless module (106) and the gravity sensor (110), and configured to control the wireless module (106) to emit the first radar signal (R1) when the sensing result (SR) conforms to an emitting condition and determine a physiological status of the user according to the second radar signal (R2) received by the wireless module (106).
9
US2020185831A1
ANTENNA STRUCTURE AND MOBILE DEVICE
Publication/Patent Number: US2020185831A1 Publication Date: 2020-06-11 Application Number: 16/278,340 Filing Date: 2019-02-18 Inventor: Chen, Wei-chen   Chang cheng wei   Assignee: Wistron NeWeb Corp.   IPC: H01Q5/328 Abstract: An antenna structure includes a metal mechanism element, a ground element, a feeding radiation element, a coupling element, a dielectric substrate, and a switchable circuit. The metal mechanism element has a slot. The feeding radiation element extends across the slot. A coupling gap is formed between the feeding radiation element and the coupling element. The feeding radiation element and the coupling element are disposed on the dielectric substrate. The switchable circuit includes a first metal element, a second metal element, a reactance element, a capacitor, and a diode. The first metal element is coupled to the coupling element. The reactance element is embedded in the first metal element. The second metal element is coupled through the capacitor to the ground element. The diode is coupled between the first metal element and the second metal element. The diode is turned on or off according to the control voltage difference.
10
US2020006058A1
Conductive Feature Formation and Structure
Publication/Patent Number: US2020006058A1 Publication Date: 2020-01-02 Application Number: 16/568,720 Filing Date: 2019-09-12 Inventor: Chang cheng wei   Hung, Min-hsiu   Huang, Huang-yi   Wang, Chun-chieh   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/02 Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
11
EP3614230A1
PORTABLE ELECTRONIC DEVICE AND METHOD OF CONTROLLING AN IMAGE OF A DISPLAY MODULE
Publication/Patent Number: EP3614230A1 Publication Date: 2020-02-26 Application Number: 19152084.0 Filing Date: 2019-01-16 Inventor: Liang, Chen Yi   Yang, Keng-hsien   Ho, Hsin Ting   Chang cheng wei   Liao, Fang-wen   Assignee: Wistron Corporation   IPC: G06F1/16 Abstract: A portable electronic device (100) is provided and includes a first display module (102), a second display module (104), a keyboard device (106), a sensing unit (108) and a control unit (110). The second display module (104) is pivotally connected to the first display module (102). The sensing unit (108) is configured to sense a position of the keyboard device (106) relative to the second display module (104) to output a sensing signal. The control unit (110) is configured to control a displaying image of the second display module (104) according to the sensing signal.
12
US202006058A1
Conductive Feature Formation and Structure
Publication/Patent Number: US202006058A1 Publication Date: 2020-01-02 Application Number: 20/191,656 Filing Date: 2019-09-12 Inventor: Wang, Chun-chieh   Lin, Yu-ting   Chang cheng wei   Huang, Huang-yi   Hung, Min-hsiu   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L23/532 Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
13
US10714334B2
Conductive feature formation and structure
Publication/Patent Number: US10714334B2 Publication Date: 2020-07-14 Application Number: 15/860,354 Filing Date: 2018-01-02 Inventor: Chang cheng wei   Huang, Huang-yi   Wang, Chun-chieh   Lin, Yu-ting   Hung, Min-hsiu   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/762 Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
14
US2020064889A1
PORTABLE ELECTRONIC DEVICE AND METHOD OF CONTROLLING AN IMAGE OF A DISPLAY MODULE
Publication/Patent Number: US2020064889A1 Publication Date: 2020-02-27 Application Number: 16/197,286 Filing Date: 2018-11-20 Inventor: Liang, Chen Yi   Yang, Keng-hsien   Ho, Hsin Ting   Chang cheng wei   Liao, Fang-wen   Assignee: Wistron Corp.   IPC: G06F1/16 Abstract: A portable electronic device is provided and includes a first display module, a second display module, a keyboard device, a sensing unit and a control unit. The second display module is pivotally connected to the first display module. The sensing unit is configured to sense a position of the keyboard device relative to the second display module to output a sensing signal. The control unit is configured to control a displaying image of the second display module according to the sensing signal.
15
US10804097B2
Conductive feature formation and structure
Publication/Patent Number: US10804097B2 Publication Date: 2020-10-13 Application Number: 16/568,720 Filing Date: 2019-09-12 Inventor: Chang cheng wei   Hung, Min-hsiu   Huang, Hung-yi   Wang, Chun Chieh   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/02 Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
16
US2020161412A1
TILED DEVICE AND ELECTRONIC DEVICE
Publication/Patent Number: US2020161412A1 Publication Date: 2020-05-21 Application Number: 16/656,537 Filing Date: 2019-10-17 Inventor: Lin, Ya-wen   Chen, Chien-chih   Tu, Yen-hsi   Chang cheng wei   Yang, Shu-hui   Assignee: InnoLux Corporation   IPC: H01L27/32 Abstract: An electronic device includes a flexible substrate and a conductive wire. The flexible substrate includes a first bending region and a side region connected to the first bending region. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. A ratio of a total width of the metal portion disposed in the first bending region to a total width of the metal portion disposed in the side region is in a range from 0.8 to 1.2, and a length of one of the openings in the first bending region is less than or equal to a length of one of the openings in the side region.
17
EP3654320A1
TILED DEVICE AND ELECTRONIC DEVICE
Publication/Patent Number: EP3654320A1 Publication Date: 2020-05-20 Application Number: 19208485.3 Filing Date: 2019-11-12 Inventor: Lin, Ya-wen   Chen, Chien-chih   Tu, Yen-hsi   Chang cheng wei   Yang, Shu-hui   Assignee: InnoLux Corporation   IPC: G09F9/302 Abstract: An electronic device (10) includes a flexible substrate (100) and a conductive wire (106, 106a, 106b). The flexible substrate (100) includes a first bending region (100b) and a side region (100c) connected to the first bending region (100b). The conductive wire (106, 106a, 106b) is disposed on the flexible substrate (100) and includes a metal portion (120) and a plurality of openings (122, 1220, 1222, 1224, 1226) disposed in the metal portion (120). A ratio of a total width of the metal portion (120) disposed in the first bending region (100b) to a total width of the metal portion (120) disposed in the side region (100c) is in a range from 0.8 to 1.2, and a length (H0) of one of the openings (1222) in the first bending region (100b) is less than or equal to a length (HI) of one of the openings (1220) in the side region (100c).
18
US2020402859A1
Contact Structure and Method of Fabricating the Same
Publication/Patent Number: US2020402859A1 Publication Date: 2020-12-24 Application Number: 17/010,995 Filing Date: 2020-09-03 Inventor: Hsu, Wan Hsuan   Wang, I-hsiu   Chen, Yean-zhaw   Chang cheng wei   Wang, Yu Shih   Lu, Hsin-yan   Chiu, Yi-wei   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/8234 Abstract: An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.
19
US10770356B2
Contact structure and method of fabricating the same
Publication/Patent Number: US10770356B2 Publication Date: 2020-09-08 Application Number: 16/016,962 Filing Date: 2018-06-25 Inventor: Hsu, Wan Hsuan   Wang, I-hsiu   Chen, Yean-zhaw   Chang cheng wei   Wang, Yu Shih   Lu, Hsin-yan   Chiu, Yi-wei   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L21/8234 Abstract: An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.
20
US10685842B2
Selective formation of titanium silicide and titanium nitride by hydrogen gas control
Publication/Patent Number: US10685842B2 Publication Date: 2020-06-16 Application Number: 15/983,216 Filing Date: 2018-05-18 Inventor: Chang cheng wei   Lin, Kao-feng   Hung, Min-hsiu   Chao, Yi-hsiang   Huang, Huang-yi   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/285 Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.
Total 7 pages