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1
US2020403023A1
WAVELENGTH TUNABLE NARROW BAND FILTER
Publication/Patent Number: US2020403023A1 Publication Date: 2020-12-24 Application Number: 16/654,297 Filing Date: 2019-10-16 Inventor: Huang, Cheng Yu   Chuang, Chun-hao   Hashimoto, Kazuaki   Chou, Keng-yu   Chiang, Wei-chieh   Wu, Wen-hau   Chang chih kung   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.
2
US2020098801A1
SEMICONDUCTOR IMAGE SENSOR
Publication/Patent Number: US2020098801A1 Publication Date: 2020-03-26 Application Number: 16/695,575 Filing Date: 2019-11-26 Inventor: Chou, Keng-yu   Chuang, Chun-hao   Tseng, Chien-hsien   Hashimoto, Kazuaki   Chiang, Wei-chieh   Huang, Cheng Yu   Wu, Wen-hau   Chang chih kung   Sze, Jhy-jyi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.
3
US2020098813A1
WAVE GUIDE FILTER FOR SEMICONDUCTOR IMAGING DEVICES
Publication/Patent Number: US2020098813A1 Publication Date: 2020-03-26 Application Number: 16/416,583 Filing Date: 2019-05-20 Inventor: Huang, Cheng Yu   Chuang, Chun-hao   Tseng, Chien-hsien   Hashimoto, Kazuaki   Chou, Keng-yu   Chiang, Wei-chieh   Yu, Wen-chien   Chang, Ting-cheng   Wu, Wen-hau   Chang chih kung   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.
4
TW201902149A
Communication device
Publication/Patent Number: TW201902149A Publication Date: 2019-01-01 Application Number: 106116915 Filing Date: 2017-05-22 Inventor: Chang chih kung   Chou, Yu-pang   Chang, Jyh-hui   Assignee: JIENG TAI INTERNATIONAL ELECTRIC CORP.   IPC: H04B1/40 Abstract: A communication device includes a first connector, a first radio frequency unit, a first transmission line and a first antenna. The first radio frequency (RF) unit is connected to the first connector, the first transmission line has a first terminal and a second terminal, the first terminal of the first transmission line is connected to the first connector, and the first antenna is contacted and electrically coupled to the second terminal of the first transmission line. The first RF unit is configured to generate a first RF signal. The first terminal of the first transmission line is configured to receive the first RF signal, and the first transmission line is configured to transmit the first RF signal from the first terminal of the first transmission line to the second terminal of the first transmission line. The first antenna is configured to send the first RF signal.
5
KR20190140809A
SEMICONDUCTOR IMAGE SENSOR
Publication/Patent Number: KR20190140809A Publication Date: 2019-12-20 Application Number: 20180126719 Filing Date: 2018-10-23 Inventor: Chiang, Wei Chieh   Chou, Keng Yu   Hashimoto, Kazuaki   Wu, Wen Hau   Chuang, Chun Hao   Chang, Chih Kung   Huang, Cheng Yu   Tseng, Chien Hsien   Sze, Jhy Jyi   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L27/146 Abstract: 일부 실시예에서, 본 개시는 이미지 센서 집적 칩에 관한 것이다. 집적 칩은 기판의 픽셀 영역 내에 배열된 이미지 센싱 소자를 갖는다. 제1 유전체가 기판의 제1 면 내의 트렌치에 배치된다. 트렌치는 픽셀 영역의 대향 측에 배치된 제1 측벽에 의해 정의된다. 내부 반사 강화 구조물이 기판의 제1 면을 따라 배열되며, 기판으로부터 빠져나가는 방사선을 다시 기판 안으로 반사시키도록 구성된다.
6
DE102018118613A1
Halbleiter-Bildsensor
Publication/Patent Number: DE102018118613A1 Publication Date: 2019-12-12 Application Number: 102018118613 Filing Date: 2018-08-01 Inventor: Tseng, Chien-hsien   Chang chih kung   Wu, Wen-hau   Huang, Cheng Yu   Chou, Keng-yu   Chiang, Wei-chieh   Chuang, Chun-hao   Hashimoto, Kazuaki   Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.   IPC: H04N5/335 Abstract: Bei einigen Ausführungsformen betrifft die vorliegende Erfindung einen integrierten Bildsensor-Chip. Der integrierte Bildsensor-Chip weist ein Bildabtastelement auf, das in einem Pixelbereich eines Substrats angeordnet ist. Ein erstes Dielektrikum ist in Gräben in einer ersten Seite des Substrats angeordnet. Die Gräben werden von ersten Seitenwänden definiert, die sich auf gegenüberliegenden Seiten des Pixelbereichs befinden. Entlang der ersten Seite des Substrats ist eine Innere-Reflexion-Verbesserungsstruktur angeordnet, die so konfiguriert ist, dass sie aus dem Substrat austretende Strahlung in das Substrat zurück reflektiert.
7
US10510795B1
Semiconductor image sensor
Publication/Patent Number: US10510795B1 Publication Date: 2019-12-17 Application Number: 16/516,451 Filing Date: 2019-07-19 Inventor: Chou, Keng-yu   Chuang, Chun-hao   Tseng, Chien-hsien   Hashimoto, Kazuaki   Chiang, Wei-chieh   Huang, Cheng Yu   Wu, Wen-hau   Chang chih kung   Sze, Jhy-jyi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.
8
US10367023B1
Semiconductor image sensor
Publication/Patent Number: US10367023B1 Publication Date: 2019-07-30 Application Number: 16/005,857 Filing Date: 2018-06-12 Inventor: Chou, Keng-yu   Chuang, Chun-hao   Tseng, Chien-hsien   Hashimoto, Kazuaki   Chiang, Wei-chieh   Huang, Cheng Yu   Wu, Wen-hau   Chang chih kung   Sze, Jhy-jyi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.
9
US2019378863A1
SEMICONDUCTOR IMAGE SENSOR
Publication/Patent Number: US2019378863A1 Publication Date: 2019-12-12 Application Number: 16/516,451 Filing Date: 2019-07-19 Inventor: Chou, Keng-yu   Chuang, Chun-hao   Tseng, Chien-hsien   Hashimoto, Kazuaki   Chiang, Wei-chieh   Huang, Cheng Yu   Wu, Wen-hau   Chang chih kung   Sze, Jhy-jyi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.
10
TWI635716B
Communication device
Publication/Patent Number: TWI635716B Publication Date: 2018-09-11 Application Number: 106116915 Filing Date: 2017-05-22 Inventor: Chang chih kung   Chou, Yu-pang   Chang, Jyh-hui   Assignee: JIENG TAI INTERNATIONAL ELECTRIC CORP.   IPC: H04B1/40 Abstract: A communication device includes a first connector, a first radio frequency unit, a first transmission line and a first antenna. The first radio frequency (RF) unit is connected to the first connector, the first transmission line has a first terminal and a second terminal, the first terminal of the first transmission line is connected to the first connector, and the first antenna is contacted and electrically coupled to the second terminal of the first transmission line. The first RF unit is configured to generate a first RF signal. The first terminal of the first transmission line is configured to receive the first RF signal, and the first transmission line is configured to transmit the first RF signal from the first terminal of the first transmission line to the second terminal of the first transmission line. The first antenna is configured to send the first RF signal.
11
US10069188B1
Communication device
Publication/Patent Number: US10069188B1 Publication Date: 2018-09-04 Application Number: 15/654,732 Filing Date: 2017-07-20 Inventor: Chou, Yu-pang   Chang chih kung   Chang, Jyh-hui   Assignee: JIENG TAI INTERNATIONAL ELECTRONIC CORP.   IPC: G11C8/00 Abstract: A communication device includes a first connector, a first radio frequency unit, a first transmission line and a first antenna. The first radio frequency (RF) unit is connected to the first connector, the first transmission line has a first terminal and a second terminal, the first terminal of the first transmission line is connected to the first connector, and the first antenna is contacted and electrically coupled to the second terminal of the first transmission line. The first RF unit is configured to generate a first RF signal. The first terminal of the first transmission line is configured to receive the first RF signal, and the first transmission line is configured to transmit the first RF signal from the first terminal of the first transmission line to the second terminal of the first transmission line. The first antenna is configured to send the first RF signal.
12
TWI566389B
Solid-state imaging devices and methods of fabricating the same
Publication/Patent Number: TWI566389B Publication Date: 2017-01-11 Application Number: 103118359 Filing Date: 2014-05-27 Inventor: Chang, Chih Kung   Hsiao, Yu Kun   Tu, Zong Ru   Lin, Chi Han   Assignee: VISERA TECHNOLOGIES COMPANY LIMITED   IPC: H01L27/146 Abstract: Solid-state imaging devices and fabrication methods thereof are provided. The solid-state imaging device includes a substrate containing a first photoelectric conversion element and a second photoelectric conversion element. A color filter layer has a first color filter component and a second color filter component respectively disposed above the first and second photoelectric conversion elements. A light-shielding partition is disposed between the first and second color filter components. The light-shielding partition has a height lower than that of the first and second color filter components. A buffer layer is disposed between the first and second color filter components and above the light-shielding partition. The buffer layer has a refractive index lower than that of the color filter layer.
13
TW201728095A
Communication device
Publication/Patent Number: TW201728095A Publication Date: 2017-08-01 Application Number: 105102542 Filing Date: 2016-01-27 Inventor: Chang chih kung   Rao, Pei-zong   Chou, Yu-pang   Assignee: JIENG TAI INTERNATIONAL ELECTRIC CORP.   IPC: H01Q1/44 Abstract: A communication device includes an antenna unit
14
TWI589126B
Communication device
Publication/Patent Number: TWI589126B Publication Date: 2017-06-21 Application Number: 105102542 Filing Date: 2016-01-27 Inventor: Chang chih kung   Rao, Pei-zong   Chou, Yu-pang   Assignee: JIENG TAI INTERNATIONAL ELECTRIC CORP.   IPC: H01Q1/44 Abstract: A communication device includes an antenna unit
15
US9559137B2
Color filter of illumination image sensor and method for fabricating the same
Publication/Patent Number: US9559137B2 Publication Date: 2017-01-31 Application Number: 12/940,756 Filing Date: 2010-11-05 Inventor: Chen, Hao-min   Lu, Chen-wei   Chang chih kung   Assignee: VISERA TECHNOLOGIES COMPANY LIMITED   IPC: H01L27/146 Abstract: The invention provides a color filter of an illumination image sensor and a method for fabricating the same. A color filter of an illumination image sensor includes a light shield portion constructed by a plurality of grid photoresist patterns, wherein the light shield portion covers a back side surface of the silicon wafer in a periphery region of an illumination image sensor chip.
16
US2017215151A1
COMMUNICATION DEVICE
Publication/Patent Number: US2017215151A1 Publication Date: 2017-07-27 Application Number: 15/168,101 Filing Date: 2016-05-30 Inventor: Chou, Yu-pang   Rao, Pei-zong   Chang chih kung   Assignee: JIENG TAI INTERNATIONAL ELECTRIC CORP.   IPC: H04W52/18 Abstract: A communication device includes an antenna unit, a sensing unit and a radio frequency unit. The antenna unit is configured to send a radio frequency signal. The sensing unit is coupled to a ground terminal through a capacitor and configured to sense a first capacitance through the antenna unit. The radio frequency unit is configured to generate the radio frequency signal, and to adjust energy of the radio frequency signal to a first energy according to the first capacitance. When the energy if the radio frequency signal is the first energy, the sensing unit is configured to sense a second capacitance through the antenna unit. The radio frequency unit is configured to adjust the energy of the radio frequency signal from the first energy to a second energy according to the second capacitance.
17
TWI536549B
Color filter of illumination image sensor and method for fabricating the same
Publication/Patent Number: TWI536549B Publication Date: 2016-06-01 Application Number: 100125764 Filing Date: 2011-07-21 Inventor: Chang, Chih Kung   Lu, Chen Wei   Chen, Hao Min   Assignee: VISERA TECHNOLOGIES COMPANY LIMITED   IPC: H01L27/146 Abstract: The invention provides a color filter of an illumination image sensor and a method for fabricating the same. A color filter of an illumination image sensor includes a light shield portion constructed by grid photoresist patterns
18
TWI537666B
SOLID-STATE IMAGING DEVICES
Publication/Patent Number: TWI537666B Publication Date: 2016-06-11 Application Number: 103127725 Filing Date: 2014-08-13 Inventor: Chang, Chih Kung   Lin, Chi Han   Mao, Hsin Wei   Assignee: VISERA TECHNOLOGIES COMPANY LIMITED   IPC: G02B5/20 Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements. A color filter layer is disposed above the photoelectric conversion elements. A light shielding layer is disposed between the color filter layer and substrate. The light-shielding layer has a plurality of first light shielding partitions extended along a first direction and a plurality of second light shielding partitions extended along a second direction perpendicular to the first direction. The first light shielding partitions have different dimensions along the second direction and the second light shielding partitions have different dimensions along the first direction.
19
US9281333B2
Solid-state imaging devices having light shielding partitions with variable dimensions
Publication/Patent Number: US9281333B2 Publication Date: 2016-03-08 Application Number: 14/267,480 Filing Date: 2014-05-01 Inventor: Lin, Chi-han   Chang chih kung   Mao, Hsin-wei   Assignee: VisEra TECHNOLOGIES COMPANY LIMITED   IPC: H01L27/146 Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements. A color filter layer is disposed above the photoelectric conversion elements. A light shielding layer is disposed between the color filter layer and substrate. The light-shielding layer has a plurality of first light shielding partitions extended along a first direction and a plurality of second light shielding partitions extended along a second direction perpendicular to the first direction. The first light shielding partitions have different dimensions along the second direction and the second light shielding partitions have different dimensions along the first direction.
20
US9412775B2
Solid-state imaging devices and methods of fabricating the same
Publication/Patent Number: US9412775B2 Publication Date: 2016-08-09 Application Number: 14/220,864 Filing Date: 2014-03-20 Inventor: Lin, Chi-han   Chang chih kung   Hsiao, Yu-kun   Tu, Zong-ru   Assignee: VISERA TECHNOLOGIES COMPANY LIMITED   IPC: H01L31/00 Abstract: Solid-state imaging devices and fabrication methods thereof are provided. The solid-state imaging device includes a substrate containing a first photoelectric conversion element and a second photoelectric conversion element. A color filter layer has a first color filter component and a second color filter component respectively disposed above the first and second photoelectric conversion elements. A light-shielding partition is disposed between the first and second color filter components. The light-shielding partition has a height lower than that of the first and second color filter components. A buffer layer is disposed between the first and second color filter components and above the light-shielding partition. The buffer layer has a refractive index lower than that of the color filter layer.
Total 4 pages