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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
EP3101435B1
POWER DETECTION
Publication/Patent Number: EP3101435B1 Publication Date: 2020-10-28 Application Number: 16169467.4 Filing Date: 2016-05-12 Inventor: Chen meng hung   Shana'a, Osama K.a.   Chee, Yuenhui   Lu, Chiyuan   Assignee: MediaTek Inc.   IPC: G01R21/07
2
US10082528B2
Power detector
Publication/Patent Number: US10082528B2 Publication Date: 2018-09-25 Application Number: 14/963,921 Filing Date: 2015-12-09 Inventor: Chen meng hung   Shana'a, Osama K. A.   Chee, Yuenhui   Lu, Chiyuan   Assignee: MediaTek Inc.   IPC: G01R21/07 Abstract: Some embodiments relate to power detector including a voltage sensor configured to detect a voltage of a load and a current sensor configured to detect a current of the load. The power detector also includes circuitry configured to introduce a phase delay between the detected voltage of the load and the detected current of the load, thereby producing a voltage measurement and a current measurement. The circuitry is also configured to multiply the voltage measurement and the current measurement.
3
TWI566410B
Semiconductor device
Publication/Patent Number: TWI566410B Publication Date: 2017-01-11 Application Number: 103143498 Filing Date: 2014-12-12 Inventor: Chen, Meng Hung   Ma, Shih Kuei   Ho, Geng Tai   Wu, Hsiao Chia   Lee, Tien Chun   Assignee: EPISIL TECHNOLOGIES INC.   IPC: H01L21/22 Abstract: Provided is a termination structure including a substrate of a first conductivity type
4
WO2016122568A1
STACKED FIN STRUCTURE
Publication/Patent Number: WO2016122568A1 Publication Date: 2016-08-04 Application Number: 2015013700 Filing Date: 2015-01-30 Inventor: Chen meng hung   Lin, Hung-ming   Chiou, Lan-chin   Assignee: Hewlett-Packard Development Company, L.P.   IPC: F28D15/02 Abstract: A heat sink system is described. The heat sink system comprises a plurality of parallel plates
5
TW201636563A
Stacked fin structure
Publication/Patent Number: TW201636563A Publication Date: 2016-10-16 Application Number: 105102931 Filing Date: 2016-01-29 Inventor: Chen meng hung   Lin, Hung-ming   Chiou, Lan-chin   Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P.   IPC: F28F3/08 Abstract: A heat sink system is described. The heat sink system comprises a plurality of parallel plates
6
TW201622150A
Semiconductor device
Publication/Patent Number: TW201622150A Publication Date: 2016-06-16 Application Number: 103143498 Filing Date: 2014-12-12 Inventor: Chen, Meng Hung   Ma, Shih Kuei   Ho, Geng Tai   Wu, Hsiao Chia   Lee, Tien Chun   Assignee: EPISIL TECHNOLOGIES INC.   IPC: H01L21/22 Abstract: Provided is a termination structure including a substrate of a first conductivity type
7
EP3101435A1
POWER DETECTOR
Publication/Patent Number: EP3101435A1 Publication Date: 2016-12-07 Application Number: 16169467.4 Filing Date: 2016-05-12 Inventor: Chen meng hung   Shana'a, Osama K.a.   Chee, Yuenhui   Lu, Chiyuan   Assignee: MediaTek Inc.   IPC: G01R21/07 Abstract: Some embodiments relate to power detector including a voltage sensor (88) configured to detect a voltage of a load (84) and a current sensor (86) configured to detect a current of the load (84). The power detector also includes circuitry (6) configured to introduce a phase delay between the detected voltage of the load (84) and the detected current of the load (84), thereby producing a voltage measurement and a current measurement. The circuitry (6) is also configured to multiply the voltage measurement and the current measurement.
8
US2016334444A1
POWER DETECTOR
Publication/Patent Number: US2016334444A1 Publication Date: 2016-11-17 Application Number: 14/963,921 Filing Date: 2015-12-09 Inventor: Chen meng hung   Shana'a, Osama K.a.   Chee, Yuenhui   Lu, Chiyuan   Assignee: MediaTek Inc.   IPC: G01R21/06 Abstract: Some embodiments relate to power detector including a voltage sensor configured to detect a voltage of a load and a current sensor configured to detect a current of the load. The power detector also includes circuitry configured to introduce a phase delay between the detected voltage of the load and the detected current of the load, thereby producing a voltage measurement and a current measurement. The circuitry is also configured to multiply the voltage measurement and the current measurement.
9
US2016172436A1
SEMICONDUCTOR DEVICE, TERMINATION STRUCTURE AND METHOD OF FORMING THE SAME
Publication/Patent Number: US2016172436A1 Publication Date: 2016-06-16 Application Number: 14/749,655 Filing Date: 2015-06-25 Inventor: Ho, Geng-tai   Ma, Shih-kuei   Lee, Tien-chun   Chen meng hung   Wu, Hsiao-chia   Assignee: Episil Technologies Inc.   IPC: H01L29/06 Abstract: Provided is a termination structure including a substrate of a first conductivity type, an epitaxial layer of the first conductivity type, a single bulk isolation structure and a bulk doped region of a second conductivity type. The epitaxial layer is disposed on the substrate. The single bulk isolation structure is disposed on the epitaxial layer. The bulk doped region is disposed in the epitaxial layer below the single bulk isolation structure, wherein the doping depth of the bulk doped region has a gradient distribution. A method of forming a termination structure and a semiconductor device having the termination structure are also provided.
10
TW201315255A
Adsorption speaker with situation-displaying function
Publication/Patent Number: TW201315255A Publication Date: 2013-04-01 Application Number: 100135106 Filing Date: 2011-09-28 Inventor: Chen meng hung   Assignee: EETAI TECH DEVELOP CO., LTD.   IPC: G10H1/00 Abstract: An adsorption speaker with situation-displaying function is disclosed and comprising a control module
11
US2013257484A1
VOLTAGE-TO-CURRENT CONVERTER
Publication/Patent Number: US2013257484A1 Publication Date: 2013-10-03 Application Number: 13/621,765 Filing Date: 2012-09-17 Inventor: Rafati, Hamid   Huang, Bryan Liangchin   Chen meng hung   Assignee: MEDIATEK SINGAPORE PTE. LTD.   IPC: H02M11/00 Abstract: A voltage-to-current converter is described. In one embodiment, the voltage-to-current converter includes an operational amplifier, where a first input of the operational amplifier is coupled to a first node and a second input of the operational amplifier is coupled to a reference voltage. The input voltage is connected to the first node through a resistor which generates the input current. The voltage-to-current converter also includes a first transistor coupled to a first node and to an output of the operational amplifier, where the input current flows through the first transistor. The voltage-to-current converter also includes a second transistor coupled to the first transistor, to the output of the operational amplifier, and to an output node, where an output current flows through the second transistor. The first and second transistors constitute a current mirror to provide additional current gain for the output current.
12
TWI413191B
Memory device
Publication/Patent Number: TWI413191B Publication Date: 2013-10-21 Application Number: 97100046 Filing Date: 2008-01-02 Inventor: Chen, Meng Hung   Lee, Chung Yuan   Lin, Shian Jyh   Lee, Pei Ing   Liao, Hung Chang   Assignee: NANYA TECHNOLOGY CORPORATION.   IPC: H01L21/336 Abstract: A memory device is provided. The memory device includes a substrate
13
TWI340433B
Method of manufacturing dynamic random access memory
Publication/Patent Number: TWI340433B Publication Date: 2011-04-11 Application Number: 96117016 Filing Date: 2007-05-14 Inventor: Chen, Meng Hung   Assignee: Nanya Technology Corporation   IPC: H01L21/762 Abstract: A manufacturing method of a dynamic random access memory is provided. A deep trench is formed in a substrate. A bottom electrode is formed in the substrate at the bottom of the deep trench. A capacitor dielectric layer and a first conductive layer are sequentially formed at the bottom of the deep trench. A collar oxide layer is formed on the sidewall of the deep trench exposed by the capacitor dielectric layer. A second conductive layer is formed in the deep trench. A shallow trench isolation structure is formed in the substrate. A part of the second conductive layer is removed. A titanium nitride layer is formed on the second conductive layer. A part of the collar oxide layer is removed. A buried strap is formed in the deep trench. A dielectric layer is formed in the deep trench. An active device is formed on the substrate.
14
TWM413294U
Vibration Speaker with adhering structure
Publication/Patent Number: TWM413294U Publication Date: 2011-10-01 Application Number: 100204356 Filing Date: 2011-03-11 Inventor: Chen meng hung   Assignee: EETAI TECH DEVELOP CO., LTD.   IPC: H04R5/02
15
TWI351735B
Memory device and fabrication method thereof
Publication/Patent Number: TWI351735B Publication Date: 2011-11-01 Application Number: 96117764 Filing Date: 2007-05-18 Inventor: Chen, Meng Hung   Liao, Shian Hau   Assignee: NANYA TECHNOLOGY CORPORATION.   IPC: H01L21/8242 Abstract: A fabrication of a memory device is disclosed. At least two gates are formed on a substrate. A doped dielectric layer is formed on the gates and the substrate
16
US8044449B2
Memory device with a length-controllable channel
Publication/Patent Number: US8044449B2 Publication Date: 2011-10-25 Application Number: 12/183,021 Filing Date: 2008-07-30 Inventor: Lin, Shian-jyh   Liao, Hung-chang   Chen meng hung   Lee, Chung-yuan   Lee, Pei-ing   Assignee: Nanya Technology Corporation   IPC: H01L29/76 Abstract: A memory device is provided. The memory device includes a substrate, a trench having an upper portion and a lower portion formed in the substrate, a trench capacitor formed in the lower portion of the trench, a collar dielectric layer formed on a sidewall of the trench capacitor and extending away from a top surface of the substrate, a first doping region formed on a side of the upper portion of the trench in the substrate for serving as source/drain, a conductive layer formed in the trench and electrically connected to the first doping region, a top dielectric layer formed on conductive layer, a gate formed on the top dielectric layer, an epitaxy layer formed on both sides of the gate and on the substrate and a second doping area formed on a top of the epitaxy layer for serving as source/drain.
17
TWM380702U
Multi-baffle rotary axle structure
Publication/Patent Number: TWM380702U Publication Date: 2010-05-11 Application Number: 98225048 Filing Date: 2009-12-31 Inventor: Chen meng hung   Hsu, Hua-feng   Chiu, Yu-teng   Assignee: Jarllytec Co., Ltd.   IPC: H05K7/16
18
TWM388822U
Rotatable and movable dual-shaft hinge
Publication/Patent Number: TWM388822U Publication Date: 2010-09-11 Application Number: 99209562 Filing Date: 2010-05-20 Inventor: Chen meng hung   Hsu, Hua-feng   Chiu, Yu-teng   Yu, Tse-cheng   Assignee: Jarllytec Co., Ltd.   IPC: H05K7/16
19
TW200931539A
Memory device
Publication/Patent Number: TW200931539A Publication Date: 2009-07-16 Application Number: 97100046 Filing Date: 2008-01-02 Inventor: Chen, Meng Hung   Lee, Chung Yuan   Lin, Shian Jyh   Lee, Pei Ing   Liao, Hung Chang   Assignee: NANYA TECHNOLOGY CORPORATION.   IPC: H01L21/336 Abstract: A memory device is provided. The memory device includes a substrate
20
TWM365626U
Hinge locking structure for slim display panel
Publication/Patent Number: TWM365626U Publication Date: 2009-09-21 Application Number: 98209270 Filing Date: 2009-05-22 Inventor: Chen meng hung   Hsu, Hua-feng   Chung, Feng-yu   Tsai, You-shiuan   Assignee: Jarllytec Co., Ltd.   IPC: H05K7/16
Total 5 pages