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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
TW577112B
Method of improving uniformity of photoresist layer
Publication/Patent Number: TW577112B Publication Date: 2004-02-21 Application Number: 92102762 Filing Date: 2003-02-11 Inventor: Lee, Chung-yuan   Chen mong hung   Wu, Hsin-ling   Wu, Hung-mo   Assignee: Nanya Technology Corporation   IPC: G03F7/26 Abstract: A method for improving uniformity of a photoresist layer. First
2
TW200415699A
Method of improving uniformity of photoresist layer
Publication/Patent Number: TW200415699A Publication Date: 2004-08-16 Application Number: 92102762 Filing Date: 2003-02-11 Inventor: Lee, Chung-yuan   Chen mong hung   Wu, Hsin-ling   Wu, Hung-mo   Assignee: Nanya Technology Corporation   IPC: G03F7/26 Abstract: A method for improving uniformity of a photoresist layer. First
3
TW583746B
Method of forming a bottle trench
Publication/Patent Number: TW583746B Publication Date: 2004-04-11 Application Number: 92104769 Filing Date: 2003-03-06 Inventor: Chang, Ming-cheng   Lin, Shian-jyh   Chen mong hung   Huang, Chen-chou   Liao, Hsien-hao   Assignee: Nanya Technology Corporation   IPC: H01L21/308 Abstract: A method of forming a bottle shaped trench. A silicon substrate having a trench is provided. The trench has upper and lower regions. A conformal SiO2 layer is formed on the surface of the trench in the lower region. A nitridation procedure is performed on the trench to form a Si3N4 film on the side wall of the trench in the upper region. The SiO2 layer is removed. Then
4
TW200418126A
Method of forming a bottle trench
Publication/Patent Number: TW200418126A Publication Date: 2004-09-16 Application Number: 92104769 Filing Date: 2003-03-06 Inventor: Chang, Ming-cheng   Lin, Shian-jyh   Chen mong hung   Huang, Chen-chou   Liao, Hsien-hao   Assignee: Nanya Technology Corporation   IPC: H01L21/308 Abstract: A method of forming a bottle shaped trench. A silicon substrate having a trench is provided. The trench has upper and lower regions. A conformal SiO2 layer is formed on the surface of the trench in the lower region. A nitridation procedure is performed on the trench to form a Si3N4 film on the side wall of the trench in the upper region. The SiO2 layer is removed. Then