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1
US10763289B2
Light blocking layer for image sensor device
Publication/Patent Number: US10763289B2 Publication Date: 2020-09-01 Application Number: 16/657,469 Filing Date: 2019-10-18 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manuracturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.
2
US10692911B2
Polarizers for image sensor devices
Publication/Patent Number: US10692911B2 Publication Date: 2020-06-23 Application Number: 16/521,181 Filing Date: 2019-07-24 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
3
US2020035734A1
INCREASED OPTICAL PATH FOR LONG WAVELENGTH LIGHT BY GRATING STRUCTURE
Publication/Patent Number: US2020035734A1 Publication Date: 2020-01-30 Application Number: 16/578,296 Filing Date: 2019-09-21 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
4
US10804307B2
Increased optical path for long wavelength light by grating structure
Publication/Patent Number: US10804307B2 Publication Date: 2020-10-13 Application Number: 16/578,296 Filing Date: 2019-09-21 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
5
US2020066777A1
INCREASED OPTICAL PATH FOR LONG WAVELENGTH LIGHT BY GRATING STRUCTURE
Publication/Patent Number: US2020066777A1 Publication Date: 2020-02-27 Application Number: 16/672,814 Filing Date: 2019-11-04 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
6
US2020321379A1
POLARIZERS FOR IMAGE SENSOR DEVICES
Publication/Patent Number: US2020321379A1 Publication Date: 2020-10-08 Application Number: 16/907,788 Filing Date: 2020-06-22 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
7
US202035734A1
INCREASED OPTICAL PATH FOR LONG WAVELENGTH LIGHT BY GRATING STRUCTURE
Publication/Patent Number: US202035734A1 Publication Date: 2020-01-30 Application Number: 20/191,657 Filing Date: 2019-09-21 Inventor: Lee, Kuo-cheng   Chou chun hao   Cheng, Yun-wei   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
8
US2020052022A1
Light Blocking Layer for Image Sensor Device
Publication/Patent Number: US2020052022A1 Publication Date: 2020-02-13 Application Number: 16/657,469 Filing Date: 2019-10-18 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.
9
US202052022A1
Light Blocking Layer for Image Sensor Device
Publication/Patent Number: US202052022A1 Publication Date: 2020-02-13 Application Number: 20/191,665 Filing Date: 2019-10-18 Inventor: Lee, Kuo-cheng   Cheng, Yun-wei   Chou chun hao   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.
10
US2020099846A1
Image Sensor for Sensing LED Light with Reduced Flickering
Publication/Patent Number: US2020099846A1 Publication Date: 2020-03-26 Application Number: 16/264,212 Filing Date: 2019-01-31 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Chen, Hsin-chi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H04N5/235 Abstract: An image sensor device has a first number of first pixels disposed in a substrate and a second number of second pixels disposed in the substrate. The first number is substantially equal to the second number. A light-blocking structure disposed over the first pixels and the second pixels. The light-blocking structure defines a plurality of first openings and second openings through which light can pass. The first openings are disposed over the first pixels. The second openings are disposed over the second pixels. The second openings are smaller than the first openings. A microcontroller is configured to turn on different ones of the second pixels at different points in time.
11
US10872921B2
Image sensor and method for fabricating the image sensor
Publication/Patent Number: US10872921B2 Publication Date: 2020-12-22 Application Number: 16/118,335 Filing Date: 2018-08-30 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Chen, Hsin-chi   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L27/146 Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.
12
US2020035732A1
IMAGE SENSOR DEVICE
Publication/Patent Number: US2020035732A1 Publication Date: 2020-01-30 Application Number: 16/595,729 Filing Date: 2019-10-08 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Huang, Hsun-ying   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure includes a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, the etch stop layer is between the first insulating layer and the substrate, and the etch stop layer, the first insulating layer, and the substrate are made of different materials. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure is in direct contact with the etch stop layer, the second isolation structure surrounds the light-sensing region, and the second isolation structure includes a light-blocking structure.
13
US10854530B1
Heat dissipation structures
Publication/Patent Number: US10854530B1 Publication Date: 2020-12-01 Application Number: 16/528,207 Filing Date: 2019-07-31 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Chen, Ying-hao   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L23/367 Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.
14
US2020177830A1
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Publication/Patent Number: US2020177830A1 Publication Date: 2020-06-04 Application Number: 16/429,403 Filing Date: 2019-06-03 Inventor: Cheng, Yun-wei   Chun-wei, Chia   Chou chun hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manufacturing Company Limited   IPC: H04N5/378 Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.
15
US2020135787A1
METHOD FOR FORMING LIGHT-SENSING DEVICE
Publication/Patent Number: US2020135787A1 Publication Date: 2020-04-30 Application Number: 16/728,568 Filing Date: 2019-12-27 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Huang, Hsun-ying   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L27/146 Abstract: A method for forming a light-sensing device is provided. The method includes forming a light-sensing region in a semiconductor substrate. The semiconductor substrate has a front surface and a light-receiving surface opposite to the front surface. The method also includes forming a first dielectric layer over the front surface and forming a second dielectric layer over the first dielectric layer. The second dielectric layer has a different refractive index than that of the first dielectric layer, and the first dielectric layer and the second dielectric layer together form a (or a part of a) light-reflective element. The method further includes partially removing the first dielectric layer and the second dielectric layer to form a contact opening. In addition, the method includes forming a conductive contact to partially (or completely) fill the contact opening.
16
US202035732A1
IMAGE SENSOR DEVICE
Publication/Patent Number: US202035732A1 Publication Date: 2020-01-30 Application Number: 20/191,659 Filing Date: 2019-10-08 Inventor: Huang, Hsun-ying   Lee, Kuo-cheng   Chou chun hao   Cheng, Yun-wei   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure includes a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, the etch stop layer is between the first insulating layer and the substrate, and the etch stop layer, the first insulating layer, and the substrate are made of different materials. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure is in direct contact with the etch stop layer, the second isolation structure surrounds the light-sensing region, and the second isolation structure includes a light-blocking structure.
17
US2020075661A1
IMAGE SENSOR AND METHOD FOR FABRICATING THE IMAGE SENSOR
Publication/Patent Number: US2020075661A1 Publication Date: 2020-03-05 Application Number: 16/118,335 Filing Date: 2018-08-30 Inventor: Cheng, Yun-wei   Chou chun hao   Lee, Kuo-cheng   Chen, Hsin-chi   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L27/146 Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.
18
US10553631B2
Color filter uniformity for image sensor devices
Publication/Patent Number: US10553631B2 Publication Date: 2020-02-04 Application Number: 16/414,563 Filing Date: 2019-05-16 Inventor: Chu, Yi-hsing   Chou chun hao   Lee, Kuo-cheng   Huang, Yin-chieh   Cheng, Yun-wei   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.
19
US10818719B2
Semiconductor device with a radiation sensing region and method for forming the same
Publication/Patent Number: US10818719B2 Publication Date: 2020-10-27 Application Number: 16/578,972 Filing Date: 2019-09-23 Inventor: Tsai, Tsung-han   Cheng, Yun-wei   Lee, Kuo-cheng   Chou chun hao   Hsu, Yung-lung   Assignee: Taiwan Semicondutor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.
20
US10714523B2
Isolation structure and image sensor
Publication/Patent Number: US10714523B2 Publication Date: 2020-07-14 Application Number: 16/222,649 Filing Date: 2018-12-17 Inventor: Cheng, Yun-wei   Chia, Chun-wei   Chou chun hao   Lee, Kuo-cheng   Huang, Hsun-ying   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L27/146 Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.