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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
1
TWI400813B
Apparatus and method for forming quantum-dot and quantum-well mixed-mode infrared photodetector
Publication/Patent Number: TWI400813B Publication Date: 2013-07-01 Application Number: 97132489 Filing Date: 2008-08-26 Inventor: Lin, Shih Yen   Chou, Shu Ting   Tseng, Chi Che   Lin, Wei Hsun   Assignee: Academia Sinica   IPC: H01L31/101 Abstract: The present invention is disclosed that Quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector (MMIP) are demonstrated for multi-color detection in both the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) ranges. The polarization-dependent response of the device has shown that the higher normal-incident absorption is observed for the MWIR peaks
2
TW201010105A
Apparatus and method for forming quantum-dot and quantum-well mixed-mode infrared photodetector
Publication/Patent Number: TW201010105A Publication Date: 2010-03-01 Application Number: 97132489 Filing Date: 2008-08-26 Inventor: Lin, Shih Yen   Chou, Shu Ting   Tseng, Chi Che   Lin, Wei Hsun   Assignee: Academia Sinica   IPC: H01L31/101 Abstract: The present invention is disclosed that Quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector (MMIP) are demonstrated for multi-color detection in both the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) ranges. The polarization-dependent response of the device has shown that the higher normal-incident absorption is observed for the MWIR peaks
3
US7560728B2
Vertical organic transistor and method of fabricating the same
Publication/Patent Number: US7560728B2 Publication Date: 2009-07-14 Application Number: 11/308,716 Filing Date: 2006-04-25 Inventor: Lin, Shih-yen   Ou, Tzu-min   Yang, Chuan-yi   Chou shu ting   Huang, Chun-yuan   Chan, I-min   Cheng, Shiau-shin   Chan, Yi-jen   Assignee: Industrial Technology Research Institute   IPC: H01L29/08 Abstract: A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.
4
TWI299904B
VERTICAL ORGANIC TRANSISTOR AND FABRICATING METHOD OF THE SAME
Publication/Patent Number: TWI299904B Publication Date: 2008-08-11 Application Number: 95103384 Filing Date: 2006-01-27 Inventor: Chan, I Min   Huang, Chun Yuan   Chan, Yi Jen   Lin, Shih Yen   Ou, Tzu Min   Yang, Chuan Yi   Chou, Shu Ting   Cheng, Shiau Shin   Assignee: Industrial Technology Research Institute   IPC: H01L29/43 Abstract: A vertical organic transistor includes: a collector contact layer disposed on a substrate
5
TW200729483A
VERTICAL ORGANIC TRANSISTOR AND FABRICATING METHOD OF THE SAME
Publication/Patent Number: TW200729483A Publication Date: 2007-08-01 Application Number: 95103384 Filing Date: 2006-01-27 Inventor: Chan, I Min   Huang, Chun Yuan   Chan, Yi Jen   Lin, Shih Yen   Ou, Tzu Min   Yang, Chuan Yi   Chou, Shu Ting   Cheng, Shiau Shin   Assignee: Industrial Technology Research Institute   IPC: H01L29/43 Abstract: A vertical organic transistor includes: a collector contact layer disposed on a substrate
6
US2007176166A1
VERTICAL ORGANIC TRANSISTOR AND METHOD OF FABRICATING THE SAME
Publication/Patent Number: US2007176166A1 Publication Date: 2007-08-02 Application Number: 11/308,716 Filing Date: 2006-04-25 Inventor: Lin, Shih-yen   Ou, Tzu-min   Yang, Chuan-yi   Chou shu ting   Huang, Chun-yuan   Chan, I-min   Cheng, Shiau-shin   Chan, Yi-jen   Assignee: Lin, Shih-Yen   Ou, Tzu-Min   Yang, Chuan-Yi   Chou shu ting   Huang, Chun-Yuan   Chan, I-Min   Cheng, Shiau-Shin   Chan, Yi-Jen   IPC: H01L29/08 Abstract: A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.
7
TWI269355B
Quantum-dot infrared photodetector
Publication/Patent Number: TWI269355B Publication Date: 2006-12-21 Application Number: 93141218 Filing Date: 2004-12-29 Inventor: Chi, Jim-yun   Lin, Shih-yen   Chou shu ting   Tsai, Cheng-xuan   Assignee: Industrial Technology Research Institute   IPC: H01L21/00 Abstract: The present invention discloses a quantum-dot infrared photodetector which comprises a semiconductor substrate; a buffer layer formed onto the semiconductor substrate; an un-doped 1st barrier layer formed onto the buffer layer; a 1st quantum-dot structure layer formed onto the 1st barrier layer; an heavily doped 1st contact layer formed onto the 1st quantum-dot structure layer; a 2nd quantum-dot structure layer formed onto the 1st contact layer; an un-doped 2nd barrier layer formed onto the 2nd quantum-dot structure layer; and an doped 2nd contact layer formed onto the 2nd quantum-dot structure layer. In another embodiment
8
US2006138396A1
Quantum-dot infrared photodetector
Publication/Patent Number: US2006138396A1 Publication Date: 2006-06-29 Application Number: 11/201,158 Filing Date: 2005-08-11 Inventor: Lin, Shih-yen   Chi, Jim-yung   Chou shu ting   Tsai, Cheng-xuan   Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   IPC: H01L29/06 Abstract: A quantum-dot infrared photodetector comprises a semiconductor substrate; a buffer layer formed on the semiconductor substrate; an undoped first obstructing layer formed on the buffer layer; a first quantum-dot layer formed on the first barrier layer; a heavily doped first contact layer formed on the first quantum-dot layer; a second quantum-dot layer formed on the first contact layer; an undoped second obstructing layer formed on the second quantum-dot layer; and a doped second contact layer formed on the second quantum-dot layer. In another embodiment, the first obstructing layer and the second obstructing layer may be formed optionally. The quantum-dot photodetector may increase photo current and constrict dark current such that detectability is improved and the operation temperature can be increased.
9
TW200623203A
Quantum-dot infrared photodetector
Publication/Patent Number: TW200623203A Publication Date: 2006-07-01 Application Number: 93141218 Filing Date: 2004-12-29 Inventor: Chi, Jim-yun   Lin, Shih-yen   Chou shu ting   Tsai, Cheng-xuan   Assignee: Industrial Technology Research Institute   IPC: H01L21/00 Abstract: The present invention discloses a quantum-dot infrared photodetector which comprises a semiconductor substrate; a buffer layer formed onto the semiconductor substrate; an un-doped 1st barrier layer formed onto the buffer layer; a 1st quantum-dot structure layer formed onto the 1st barrier layer; an heavily doped 1st contact layer formed onto the 1st quantum-dot structure layer; a 2nd quantum-dot structure layer formed onto the 1st contact layer; an un-doped 2nd barrier layer formed onto the 2nd quantum-dot structure layer; and an doped 2nd contact layer formed onto the 2nd quantum-dot structure layer. In another embodiment