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1 | US2020251520A1 |
SEMICONDUCTOR PHOTODETECTOR DEVICE WITH PROTECTION AGAINST AMBIENT BACK LIGHT
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Publication/Patent Number: US2020251520A1 | Publication Date: 2020-08-06 | Application Number: 16/621,140 | Filing Date: 2018-06-25 | Inventor： Sidorov, Victor Park, Jong Mun Dierschke eugene g | Assignee: ams AG | IPC: H01L27/146 | Abstract: The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e−, h+ generated by radiation that is incident from a rear side opposite the photodetectors. | |||
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2 | US10768044B2 |
Optical sensor device
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Publication/Patent Number: US10768044B2 | Publication Date: 2020-09-08 | Application Number: 16/306,649 | Filing Date: 2017-05-31 | Inventor： Mehrl, David Chesler, Troy Dierschke eugene g | Assignee: ams International AG | IPC: G01J1/42 | Abstract: An optical sensor device comprises a first and a second optical sensor arrangement. In the first optical sensor arrangement at least one optical sensor structure measures the incidence angle of incoming light that is approximately on the main beam axis of a light source. The second optical sensor arrangement comprises at least one optical sensor structure with at least one optical sensor, at least two metal layers and opaque walls optically isolating the optical sensor. An evaluation circuit provides an output signal of the second optical sensor arrangement under the condition that the incidence angle measured by the first optical sensor arrangement lies within a set interval. | |||
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3 | EP3043159B1 |
Method for processing light sensor signals and light sensor system
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Publication/Patent Number: EP3043159B1 | Publication Date: 2019-12-18 | Application Number: 15150506.2 | Filing Date: 2015-01-08 | Inventor： Jacobs, Dan Dierschke eugene g | Assignee: ams AG | IPC: G01J1/42 | ||||
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4 | US10458841B2 |
Method for processing light sensor signals and light sensor system
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Publication/Patent Number: US10458841B2 | Publication Date: 2019-10-29 | Application Number: 15/535,017 | Filing Date: 2015-11-30 | Inventor： Jacobs, Dan Dierschke eugene g | Assignee: ams AG | IPC: G01J1/04 | Abstract: An embodiment of a method for compensating variations in an attenuation of light of an optical filter of a light sensor system comprises illuminating a clear sensor and a color sensor of the light sensor system with a test light having a test spectrum. Therein the color sensor comprises the optical filter and is designed to predominantly sense light with a wavelength within a pass band of the filter; and the test spectrum has components outside the pass band. A clear test signal generated by the clear sensor and a color test signal generated by the color sensor are received in particular in response to the illumination with the test light. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated to compensate the variations in the attenuation of light based on the first transmission value T and a nominal transmission value Tn of the filter. | |||
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5 | US2019109254A1 |
Sensor Device And Method For Manufacturing A Sensor Device
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Publication/Patent Number: US2019109254A1 | Publication Date: 2019-04-11 | Application Number: 16/088,576 | Filing Date: 2017-04-07 | Inventor： Roger, Frederic Eilmsteiner, Gerhard Dierschke eugene g | Assignee: ams AG | IPC: H01L31/103 | Abstract: A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well arranged within the semiconductor substrate and having a second type of electrical conductivity and a second well arranged at least partially within the first well and having the first type of electrical conductivity. A doping concentration of the first well is greater than a doping concentration of the second well within a surface region at a main surface of the semiconductor substrate. Thereby, a photon capturing layer having the second type of electrical conductivity is formed at the main surface. A p-n junction for detecting the incident UV radiation is formed by a boundary between the second well and the photon capturing layer. | |||
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6 | TW201906188A |
Semiconductor photodetector device with protection against ambient back light
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Publication/Patent Number: TW201906188A | Publication Date: 2019-02-01 | Application Number: 107118706 | Filing Date: 2018-05-31 | Inventor： Dierschke eugene g Park, Jong-mun Sidorov, Victor | Assignee: AMS AG | IPC: H01L31/109 | Abstract: The semiconductor photodetector device comprises a substrate (1) of semiconductor material of a first type of electric conductivity, an epitaxial layer (2) of an opposite second type of electric conductivity, a further epitaxial layer (3) of the first type of electric conductivity and photodetectors (4). The epitaxial layer functions as a shielding layer for charge carriers (e-, h+) generated by radiation that is incident from a rear side opposite the photodetectors. | |||
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7 | US2019154498A1 |
OPTICAL SENSOR DEVICE
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Publication/Patent Number: US2019154498A1 | Publication Date: 2019-05-23 | Application Number: 16/306,649 | Filing Date: 2017-05-31 | Inventor： Mehrl, David Chesler, Troy Dierschke eugene g | Assignee: ams International AG | IPC: G01J1/02 | Abstract: An optical sensor device comprises a first and a second optical sensor arrangement. In the first optical sensor arrangement at least one optical sensor structure measures the incidence angle of incoming light that is approximately on the main beam axis of a light source. The second optical sensor arrangement comprises at least one optical sensor structure with at least one optical sensor, at least two metal layers and opaque walls optically isolating the optical sensor. An evaluation circuit provides an output signal of the second optical sensor arrangement under the condition that the incidence angle measured by the first optical sensor arrangement lies within a set interval. | |||
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8 | EP3422424A1 |
SEMICONDUCTOR PHOTODETECTOR DEVICE WITH PROTECTION AGAINST AMBIENT BACK LIGHT
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Publication/Patent Number: EP3422424A1 | Publication Date: 2019-01-02 | Application Number: 17183342.9 | Filing Date: 2017-07-26 | Inventor： Sidorov, Victor Park, Jong Mun Dierschke eugene g | Assignee: ams AG | IPC: H01L31/103 | Abstract: The semiconductor photodetector device comprises a substrate (1) of semiconductor material of a first type of electric conductivity, an epitaxial layer (2) of an opposite second type of electric conductivity, a further epitaxial layer (3) of the first type of electric conductivity and photodetectors (4). The epitaxial layer functions as a shielding layer for charge carriers (e-, h+) generated by radiation that is incident from a rear side opposite the photodetectors. | |||
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9 | EP2881753B1 |
Optical sensor arrangement and method of producing an optical sensor arrangement
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Publication/Patent Number: EP2881753B1 | Publication Date: 2019-03-06 | Application Number: 13199086.3 | Filing Date: 2013-12-20 | Inventor： Schrank, Franz Dierschke eugene g Schrems, Martin | Assignee: ams AG | IPC: G01S7/481 | ||||
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10 | US2018266878A1 |
METHOD FOR PROCESSING LIGHT SENSOR SIGNALS AND LIGHT SENSOR SYSTEM
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Publication/Patent Number: US2018266878A1 | Publication Date: 2018-09-20 | Application Number: 15/535,017 | Filing Date: 2015-11-30 | Inventor： Jacobs, Dan Dierschke eugene g | Assignee: AMS AG | IPC: G01J1/04 | Abstract: An embodiment of a method for compensating variations in an attenuation of light of an optical filter of a light sensor system comprises illuminating a clear sensor and a color sensor of the light sensor system with a test light having a test spectrum. Therein the color sensor comprises the optical filter and is designed to predominantly sense light with a wavelength within a pass band of the filter; and the test spectrum has components outside the pass band. A clear test signal generated by the clear sensor and a color test signal generated by the color sensor are received in particular in response to the illumination with the test light. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated to compensate the variations in the attenuation of light based on the first transmission value T and a nominal transmission value Tn of the filter. | |||
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11 | EP3211672A1 |
CHIP-SCALE PACKAGE FOR AN OPTICAL SENSOR SEMICONDUCTOR DEVICE WITH FILTER AND METHOD OF PRODUCING A CHIP-SCALE PACKAGE
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Publication/Patent Number: EP3211672A1 | Publication Date: 2017-08-30 | Application Number: 16160917.7 | Filing Date: 2016-03-17 | Inventor： Dierschke, Eugene G Marchl, Marco | Assignee: ams AG | IPC: H01L27/146 | Abstract: Chip-scale package for an optical sensor semiconductor device with filter and method of producing a chip-scale package The chip-scale package comprises a semiconductor substrate (1) with a main surface (10), an optical sensor element (2) integrated in the substrate at the main surface, a filter element (3) arranged above the sensor element, and a glass wafer (4) arranged above the main surface, so that the filter element is arranged between the main surface and the glass wafer. An intermediate layer (9) is arranged between the filter element and the glass wafer, which is attached to the intermediate layer. The glass wafer has a thickness (t) in the direction perpendicular to the main surface of less than 200 µm. | |||
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12 | EP3229278A1 |
SENSOR DEVICE AND METHOD FOR MANUFACTURING A SENSOR DEVICE
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Publication/Patent Number: EP3229278A1 | Publication Date: 2017-10-11 | Application Number: 16168987.2 | Filing Date: 2016-05-10 | Inventor： Roger, Frederic Eilmsteiner, Gerhard Dierschke, Eugene G | Assignee: ams AG | IPC: H01L31/18 | Abstract: A sensor device comprises a semiconductor substrate (S) with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well (W1) arranged within the semiconductor substrate (S) and having a second type of electrical conductivity and a second well (W2) arranged at least partially within the first well (W1) and having the first type of electrical conductivity. A doping concentration of the first well (W1) is greater than a doping concentration of the second well (W2) within a surface region at a main surface (MS) of the semiconductor substrate (S). Thereby, a photon capturing layer (PC) having the second type of electrical conductivity is formed at the main surface (MS). A p-n junction (PND) for detecting the incident UV radiation is formed by a boundary between the second well (W2) and the photon capturing layer (PC). | |||
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13 | EP3255397A1 |
OPTICAL SENSOR DEVICE
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Publication/Patent Number: EP3255397A1 | Publication Date: 2017-12-13 | Application Number: 16176932.8 | Filing Date: 2016-06-29 | Inventor： Mehrl, David Dierschke, Eugene G Chesler, Troy | Assignee: ams international AG | IPC: G01S3/786 | Abstract: An optical sensor device comprises a first (10) and a second (15) optical sensor arrangement. In the first optical sensor arrangement (10) at least one optical sensor structure (11) measures the incidence angle of incoming light (θ) that is approximately on the main beam axis (20) of a light source (22). The second optical sensor arrangement (15) comprises at least one optical sensor structure (16) with at least one optical sensor (24), at least two metal layers (43,44) and opaque walls (26) optically isolating the optical sensor (24). An evaluation circuit (14) provides an output signal (46) of the second optical sensor arrangement (15) under the condition that the incidence angle (θ) measured by the first optical sensor arrangement (10) lies within a set interval. | |||
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14 | WO2017174798A1 |
SENSOR DEVICE AND METHOD FOR MANUFACTURING A SENSOR DEVICE
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Publication/Patent Number: WO2017174798A1 | Publication Date: 2017-10-12 | Application Number: 2017058435 | Filing Date: 2017-04-07 | Inventor： Dierschke, Eugene G Roger, Frederic Eilmsteiner, Gerhard | Assignee: AMS AG | IPC: H01L31/103 | Abstract: A sensor device comprises a semiconductor substrate (S) with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well (W1) arranged within the semiconductor substrate (S) and having a second type of electrical conductivity and a second well (W2) arranged at least partially within the first well (W1) and having the first type of electrical conductivity. A doping concentration of the first well (W1) is greater than a doping concentration of the second well (W2) within a surface region at a main surface (MS) of the semiconductor substrate (S). Thereby | |||
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15 | US9684074B2 |
Optical sensor arrangement and method of producing an optical sensor arrangement
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Publication/Patent Number: US9684074B2 | Publication Date: 2017-06-20 | Application Number: 15/101,893 | Filing Date: 2014-12-03 | Inventor： Schrank, Franz Dierschke eugene g Schrems, Martin | Assignee: AMS AG | IPC: H01L33/00 | Abstract: An optical sensor arrangement, in particular an optical proximity sensor arrangement comprises a three-dimensional integrated circuit further comprising a first layer comprising a light-emitting device, a second layer comprising a light-detector and a driver circuit. The driver circuit is electrically connected to the light-emitting device and to the light-detector to control the operation of the light-emitting device and the light-detector. A mold layer comprising a first light-barrier between the light-emitting device and the light-detector configured to block light from being transmitted directly from the light-emitting device to the light-detector. | |||
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16 | US9683889B2 |
Ultraviolet semiconductor sensor device and method of measuring ultraviolet radiation
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Publication/Patent Number: US9683889B2 | Publication Date: 2017-06-20 | Application Number: 14/773,737 | Filing Date: 2014-03-07 | Inventor： Dierschke eugene g Bishop, Todd Manninger, Mario | Assignee: AMS AG | IPC: G01J1/42 | Abstract: A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device. | |||
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17 | EP3043159A1 |
Method for processing light sensor signals and light sensor system
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Publication/Patent Number: EP3043159A1 | Publication Date: 2016-07-13 | Application Number: 15150506.2 | Filing Date: 2015-01-08 | Inventor： Jacobs, Dan Dierschke eugene g | Assignee: ams AG | IPC: G01J1/42 | Abstract: An embodiment of a method for processing light sensor signals comprises illuminating a clear sensor (CS) and a color sensor (RS, GS, BS) of a light sensor system with a test light having a test spectrum. Therein the color sensor (RS, GS, BS) comprises an optical filter and is designed to sense light with a wavelength within a pass band of the filter and the test spectrum has components outside of the pass band. A clear test signal which is generated by the clear sensor (CS) and a color test signal which is generated by the color sensor (RS, GS, BS) are received. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated based on the first transmission value T and on a nominal transmission value Tn of the filter. | |||
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18 | US2016025558A1 |
ULTRAVIOLET SEMICONDUCTOR SENSOR DEVICE AND METHOD OF MEASURING ULTRAVIOLET RADIATION
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Publication/Patent Number: US2016025558A1 | Publication Date: 2016-01-28 | Application Number: 14/773,737 | Filing Date: 2014-03-07 | Inventor： Dierschke eugene g Bishop, Todd Manninger, Mario | Assignee: AMA AG | IPC: G01J1/42 | Abstract: A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device. | |||
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19 | US2016306042A1 |
OPTICAL SENSOR ARRANGEMENT AND METHOD OF PRODUCING AN OPTICAL SENSOR ARRANGEMENT
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Publication/Patent Number: US2016306042A1 | Publication Date: 2016-10-20 | Application Number: 15/101,893 | Filing Date: 2014-12-03 | Inventor： Schrank, Franz Dierschke eugene g Schrems, Martin | Assignee: AMS AG | IPC: G01S17/02 | Abstract: An optical sensor arrangement, in particular an optical proximity sensor arrangement comprises a three-dimensional integrated circuit further comprising a first layer comprising a light-emitting device, a second layer comprising a light-detector and a driver circuit. The driver circuit is electrically connected to the light-emitting device and to the light-detector to control the operation of the light-emitting device and the light-detector. A mold layer comprising a first light-barrier between the light-emitting device and the light-detector configured to block light from being transmitted directly from the light-emitting device to the light-detector. | |||
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20 | WO2015082549A1 |
OPTICAL SENSOR ARRANGEMENT AND METHOD OF PRODUCING AN OPTICAL SENSOR ARRANGEMENT
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Publication/Patent Number: WO2015082549A1 | Publication Date: 2015-06-11 | Application Number: 2014076420 | Filing Date: 2014-12-03 | Inventor： Schrank, Franz Schrems, Martin Dierschke, Eugene G | Assignee: AMS AG | IPC: G01S7/481 | Abstract: An optical sensor arrangement |
3.Current Quota