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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
US2020251520A1
SEMICONDUCTOR PHOTODETECTOR DEVICE WITH PROTECTION AGAINST AMBIENT BACK LIGHT
Publication/Patent Number: US2020251520A1 Publication Date: 2020-08-06 Application Number: 16/621,140 Filing Date: 2018-06-25 Inventor: Sidorov, Victor   Park, Jong Mun   Dierschke eugene g   Assignee: ams AG   IPC: H01L27/146 Abstract: The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e−, h+ generated by radiation that is incident from a rear side opposite the photodetectors.
2
US10768044B2
Optical sensor device
Publication/Patent Number: US10768044B2 Publication Date: 2020-09-08 Application Number: 16/306,649 Filing Date: 2017-05-31 Inventor: Mehrl, David   Chesler, Troy   Dierschke eugene g   Assignee: ams International AG   IPC: G01J1/42 Abstract: An optical sensor device comprises a first and a second optical sensor arrangement. In the first optical sensor arrangement at least one optical sensor structure measures the incidence angle of incoming light that is approximately on the main beam axis of a light source. The second optical sensor arrangement comprises at least one optical sensor structure with at least one optical sensor, at least two metal layers and opaque walls optically isolating the optical sensor. An evaluation circuit provides an output signal of the second optical sensor arrangement under the condition that the incidence angle measured by the first optical sensor arrangement lies within a set interval.
3
EP3043159B1
Method for processing light sensor signals and light sensor system
Publication/Patent Number: EP3043159B1 Publication Date: 2019-12-18 Application Number: 15150506.2 Filing Date: 2015-01-08 Inventor: Jacobs, Dan   Dierschke eugene g   Assignee: ams AG   IPC: G01J1/42
4
US10458841B2
Method for processing light sensor signals and light sensor system
Publication/Patent Number: US10458841B2 Publication Date: 2019-10-29 Application Number: 15/535,017 Filing Date: 2015-11-30 Inventor: Jacobs, Dan   Dierschke eugene g   Assignee: ams AG   IPC: G01J1/04 Abstract: An embodiment of a method for compensating variations in an attenuation of light of an optical filter of a light sensor system comprises illuminating a clear sensor and a color sensor of the light sensor system with a test light having a test spectrum. Therein the color sensor comprises the optical filter and is designed to predominantly sense light with a wavelength within a pass band of the filter; and the test spectrum has components outside the pass band. A clear test signal generated by the clear sensor and a color test signal generated by the color sensor are received in particular in response to the illumination with the test light. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated to compensate the variations in the attenuation of light based on the first transmission value T and a nominal transmission value Tn of the filter.
5
US2019109254A1
Sensor Device And Method For Manufacturing A Sensor Device
Publication/Patent Number: US2019109254A1 Publication Date: 2019-04-11 Application Number: 16/088,576 Filing Date: 2017-04-07 Inventor: Roger, Frederic   Eilmsteiner, Gerhard   Dierschke eugene g   Assignee: ams AG   IPC: H01L31/103 Abstract: A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well arranged within the semiconductor substrate and having a second type of electrical conductivity and a second well arranged at least partially within the first well and having the first type of electrical conductivity. A doping concentration of the first well is greater than a doping concentration of the second well within a surface region at a main surface of the semiconductor substrate. Thereby, a photon capturing layer having the second type of electrical conductivity is formed at the main surface. A p-n junction for detecting the incident UV radiation is formed by a boundary between the second well and the photon capturing layer.
6
TW201906188A
Semiconductor photodetector device with protection against ambient back light
Publication/Patent Number: TW201906188A Publication Date: 2019-02-01 Application Number: 107118706 Filing Date: 2018-05-31 Inventor: Dierschke eugene g   Park, Jong-mun   Sidorov, Victor   Assignee: AMS AG   IPC: H01L31/109 Abstract: The semiconductor photodetector device comprises a substrate (1) of semiconductor material of a first type of electric conductivity, an epitaxial layer (2) of an opposite second type of electric conductivity, a further epitaxial layer (3) of the first type of electric conductivity and photodetectors (4). The epitaxial layer functions as a shielding layer for charge carriers (e-, h+) generated by radiation that is incident from a rear side opposite the photodetectors.
7
US2019154498A1
OPTICAL SENSOR DEVICE
Publication/Patent Number: US2019154498A1 Publication Date: 2019-05-23 Application Number: 16/306,649 Filing Date: 2017-05-31 Inventor: Mehrl, David   Chesler, Troy   Dierschke eugene g   Assignee: ams International AG   IPC: G01J1/02 Abstract: An optical sensor device comprises a first and a second optical sensor arrangement. In the first optical sensor arrangement at least one optical sensor structure measures the incidence angle of incoming light that is approximately on the main beam axis of a light source. The second optical sensor arrangement comprises at least one optical sensor structure with at least one optical sensor, at least two metal layers and opaque walls optically isolating the optical sensor. An evaluation circuit provides an output signal of the second optical sensor arrangement under the condition that the incidence angle measured by the first optical sensor arrangement lies within a set interval.
8
EP3422424A1
SEMICONDUCTOR PHOTODETECTOR DEVICE WITH PROTECTION AGAINST AMBIENT BACK LIGHT
Publication/Patent Number: EP3422424A1 Publication Date: 2019-01-02 Application Number: 17183342.9 Filing Date: 2017-07-26 Inventor: Sidorov, Victor   Park, Jong Mun   Dierschke eugene g   Assignee: ams AG   IPC: H01L31/103 Abstract: The semiconductor photodetector device comprises a substrate (1) of semiconductor material of a first type of electric conductivity, an epitaxial layer (2) of an opposite second type of electric conductivity, a further epitaxial layer (3) of the first type of electric conductivity and photodetectors (4). The epitaxial layer functions as a shielding layer for charge carriers (e-, h+) generated by radiation that is incident from a rear side opposite the photodetectors.
9
EP2881753B1
Optical sensor arrangement and method of producing an optical sensor arrangement
Publication/Patent Number: EP2881753B1 Publication Date: 2019-03-06 Application Number: 13199086.3 Filing Date: 2013-12-20 Inventor: Schrank, Franz   Dierschke eugene g   Schrems, Martin   Assignee: ams AG   IPC: G01S7/481
10
US2018266878A1
METHOD FOR PROCESSING LIGHT SENSOR SIGNALS AND LIGHT SENSOR SYSTEM
Publication/Patent Number: US2018266878A1 Publication Date: 2018-09-20 Application Number: 15/535,017 Filing Date: 2015-11-30 Inventor: Jacobs, Dan   Dierschke eugene g   Assignee: AMS AG   IPC: G01J1/04 Abstract: An embodiment of a method for compensating variations in an attenuation of light of an optical filter of a light sensor system comprises illuminating a clear sensor and a color sensor of the light sensor system with a test light having a test spectrum. Therein the color sensor comprises the optical filter and is designed to predominantly sense light with a wavelength within a pass band of the filter; and the test spectrum has components outside the pass band. A clear test signal generated by the clear sensor and a color test signal generated by the color sensor are received in particular in response to the illumination with the test light. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated to compensate the variations in the attenuation of light based on the first transmission value T and a nominal transmission value Tn of the filter.
11
EP3211672A1
CHIP-SCALE PACKAGE FOR AN OPTICAL SENSOR SEMICONDUCTOR DEVICE WITH FILTER AND METHOD OF PRODUCING A CHIP-SCALE PACKAGE
Publication/Patent Number: EP3211672A1 Publication Date: 2017-08-30 Application Number: 16160917.7 Filing Date: 2016-03-17 Inventor: Dierschke, Eugene G   Marchl, Marco   Assignee: ams AG   IPC: H01L27/146 Abstract: Chip-scale package for an optical sensor semiconductor device with filter and method of producing a chip-scale package The chip-scale package comprises a semiconductor substrate (1) with a main surface (10), an optical sensor element (2) integrated in the substrate at the main surface, a filter element (3) arranged above the sensor element, and a glass wafer (4) arranged above the main surface, so that the filter element is arranged between the main surface and the glass wafer. An intermediate layer (9) is arranged between the filter element and the glass wafer, which is attached to the intermediate layer. The glass wafer has a thickness (t) in the direction perpendicular to the main surface of less than 200 µm.
12
EP3229278A1
SENSOR DEVICE AND METHOD FOR MANUFACTURING A SENSOR DEVICE
Publication/Patent Number: EP3229278A1 Publication Date: 2017-10-11 Application Number: 16168987.2 Filing Date: 2016-05-10 Inventor: Roger, Frederic   Eilmsteiner, Gerhard   Dierschke, Eugene G   Assignee: ams AG   IPC: H01L31/18 Abstract: A sensor device comprises a semiconductor substrate (S) with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well (W1) arranged within the semiconductor substrate (S) and having a second type of electrical conductivity and a second well (W2) arranged at least partially within the first well (W1) and having the first type of electrical conductivity. A doping concentration of the first well (W1) is greater than a doping concentration of the second well (W2) within a surface region at a main surface (MS) of the semiconductor substrate (S). Thereby, a photon capturing layer (PC) having the second type of electrical conductivity is formed at the main surface (MS). A p-n junction (PND) for detecting the incident UV radiation is formed by a boundary between the second well (W2) and the photon capturing layer (PC).
13
EP3255397A1
OPTICAL SENSOR DEVICE
Publication/Patent Number: EP3255397A1 Publication Date: 2017-12-13 Application Number: 16176932.8 Filing Date: 2016-06-29 Inventor: Mehrl, David   Dierschke, Eugene G   Chesler, Troy   Assignee: ams international AG   IPC: G01S3/786 Abstract: An optical sensor device comprises a first (10) and a second (15) optical sensor arrangement. In the first optical sensor arrangement (10) at least one optical sensor structure (11) measures the incidence angle of incoming light (θ) that is approximately on the main beam axis (20) of a light source (22). The second optical sensor arrangement (15) comprises at least one optical sensor structure (16) with at least one optical sensor (24), at least two metal layers (43,44) and opaque walls (26) optically isolating the optical sensor (24). An evaluation circuit (14) provides an output signal (46) of the second optical sensor arrangement (15) under the condition that the incidence angle (θ) measured by the first optical sensor arrangement (10) lies within a set interval.
14
WO2017174798A1
SENSOR DEVICE AND METHOD FOR MANUFACTURING A SENSOR DEVICE
Publication/Patent Number: WO2017174798A1 Publication Date: 2017-10-12 Application Number: 2017058435 Filing Date: 2017-04-07 Inventor: Dierschke, Eugene G   Roger, Frederic   Eilmsteiner, Gerhard   Assignee: AMS AG   IPC: H01L31/103 Abstract: A sensor device comprises a semiconductor substrate (S) with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well (W1) arranged within the semiconductor substrate (S) and having a second type of electrical conductivity and a second well (W2) arranged at least partially within the first well (W1) and having the first type of electrical conductivity. A doping concentration of the first well (W1) is greater than a doping concentration of the second well (W2) within a surface region at a main surface (MS) of the semiconductor substrate (S). Thereby
15
US9684074B2
Optical sensor arrangement and method of producing an optical sensor arrangement
Publication/Patent Number: US9684074B2 Publication Date: 2017-06-20 Application Number: 15/101,893 Filing Date: 2014-12-03 Inventor: Schrank, Franz   Dierschke eugene g   Schrems, Martin   Assignee: AMS AG   IPC: H01L33/00 Abstract: An optical sensor arrangement, in particular an optical proximity sensor arrangement comprises a three-dimensional integrated circuit further comprising a first layer comprising a light-emitting device, a second layer comprising a light-detector and a driver circuit. The driver circuit is electrically connected to the light-emitting device and to the light-detector to control the operation of the light-emitting device and the light-detector. A mold layer comprising a first light-barrier between the light-emitting device and the light-detector configured to block light from being transmitted directly from the light-emitting device to the light-detector.
16
US9683889B2
Ultraviolet semiconductor sensor device and method of measuring ultraviolet radiation
Publication/Patent Number: US9683889B2 Publication Date: 2017-06-20 Application Number: 14/773,737 Filing Date: 2014-03-07 Inventor: Dierschke eugene g   Bishop, Todd   Manninger, Mario   Assignee: AMS AG   IPC: G01J1/42 Abstract: A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device.
17
EP3043159A1
Method for processing light sensor signals and light sensor system
Publication/Patent Number: EP3043159A1 Publication Date: 2016-07-13 Application Number: 15150506.2 Filing Date: 2015-01-08 Inventor: Jacobs, Dan   Dierschke eugene g   Assignee: ams AG   IPC: G01J1/42 Abstract: An embodiment of a method for processing light sensor signals comprises illuminating a clear sensor (CS) and a color sensor (RS, GS, BS) of a light sensor system with a test light having a test spectrum. Therein the color sensor (RS, GS, BS) comprises an optical filter and is designed to sense light with a wavelength within a pass band of the filter and the test spectrum has components outside of the pass band. A clear test signal which is generated by the clear sensor (CS) and a color test signal which is generated by the color sensor (RS, GS, BS) are received. Then a first transmission value T is determined based on the clear test signal and on the color test signal. Finally, a compensation factor Kr, Kg, Kb is calculated based on the first transmission value T and on a nominal transmission value Tn of the filter.
18
US2016025558A1
ULTRAVIOLET SEMICONDUCTOR SENSOR DEVICE AND METHOD OF MEASURING ULTRAVIOLET RADIATION
Publication/Patent Number: US2016025558A1 Publication Date: 2016-01-28 Application Number: 14/773,737 Filing Date: 2014-03-07 Inventor: Dierschke eugene g   Bishop, Todd   Manninger, Mario   Assignee: AMA AG   IPC: G01J1/42 Abstract: A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device.
19
US2016306042A1
OPTICAL SENSOR ARRANGEMENT AND METHOD OF PRODUCING AN OPTICAL SENSOR ARRANGEMENT
Publication/Patent Number: US2016306042A1 Publication Date: 2016-10-20 Application Number: 15/101,893 Filing Date: 2014-12-03 Inventor: Schrank, Franz   Dierschke eugene g   Schrems, Martin   Assignee: AMS AG   IPC: G01S17/02 Abstract: An optical sensor arrangement, in particular an optical proximity sensor arrangement comprises a three-dimensional integrated circuit further comprising a first layer comprising a light-emitting device, a second layer comprising a light-detector and a driver circuit. The driver circuit is electrically connected to the light-emitting device and to the light-detector to control the operation of the light-emitting device and the light-detector. A mold layer comprising a first light-barrier between the light-emitting device and the light-detector configured to block light from being transmitted directly from the light-emitting device to the light-detector.
20
WO2015082549A1
OPTICAL SENSOR ARRANGEMENT AND METHOD OF PRODUCING AN OPTICAL SENSOR ARRANGEMENT
Publication/Patent Number: WO2015082549A1 Publication Date: 2015-06-11 Application Number: 2014076420 Filing Date: 2014-12-03 Inventor: Schrank, Franz   Schrems, Martin   Dierschke, Eugene G   Assignee: AMS AG   IPC: G01S7/481 Abstract: An optical sensor arrangement
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