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1 | US10976200B2 |
Optical sensing device and method for manufacturing an optical sensing device
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Publication/Patent Number: US10976200B2 | Publication Date: 2021-04-13 | Application Number: 16/651,194 | Filing Date: 2018-08-30 | Inventor： Enichlmair, Hubert Eilmsteiner, Gerhard | Assignee: AMS AG | IPC: G01J3/02 | Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array. Furthermore, a method for manufacturing an optical sensing device is provided. | |||
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2 | EP2802009B1 |
Integrated imaging device for infrared radiation and method of production
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Publication/Patent Number: EP2802009B1 | Publication Date: 2021-03-24 | Application Number: 13167095.2 | Filing Date: 2013-05-08 | Inventor： Enichlmair, Hubert Minixhofer, Rainer Schrems, Martin | Assignee: ams AG | IPC: H01L27/146 | ||||
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3 | EP2889901B1 |
Semiconductor device with through-substrate via and corresponding method
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Publication/Patent Number: EP2889901B1 | Publication Date: 2021-02-03 | Application Number: 13199683.7 | Filing Date: 2013-12-27 | Inventor： Schrank, Franz Carniello, Sara Enichlmair, Hubert Kraft, Jochen Löffler, Bernhard Holzhaider, Rainer | Assignee: ams AG | IPC: H01L21/768 | ||||
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4 | EP3032583B1 |
Integrated optical sensor and method of producing an integrated optical sensor
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Publication/Patent Number: EP3032583B1 | Publication Date: 2020-03-04 | Application Number: 14196808.1 | Filing Date: 2014-12-08 | Inventor： Enichlmair, Hubert | Assignee: ams AG | IPC: H01L27/144 | ||||
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5 | US2020271516A1 |
OPTICAL SENSING DEVICE AND METHOD FOR MANUFACTURING AN OPTICAL SENSING DEVICE
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Publication/Patent Number: US2020271516A1 | Publication Date: 2020-08-27 | Application Number: 16/651,194 | Filing Date: 2018-08-30 | Inventor： Enichlmair, Hubert Eilmsteiner, Gerhard | Assignee: ams AG | IPC: G01J3/28 | Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array. Furthermore, a method for manufacturing an optical sensing device is provided. | |||
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6 | EP2661034B1 |
Electric circuit arrangement for galvanic isolated communication
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Publication/Patent Number: EP2661034B1 | Publication Date: 2020-03-11 | Application Number: 12166877.6 | Filing Date: 2012-05-04 | Inventor： Vinau, Jose Poirier, Sébastien Enichlmair, Hubert Ele, Vijay Ranganathan, Rohit Brandl, Manfred | Assignee: ams AG | IPC: H04L25/493 | ||||
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7 | EP3724628A1 |
INTEGRATED FILTER-BASED PARTICULATE MATTER SENSORS
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Publication/Patent Number: EP3724628A1 | Publication Date: 2020-10-21 | Application Number: 18825621.8 | Filing Date: 2018-12-13 | Inventor： Etschmaier, Harald Roehrer, Georg Singulani, Anderson Enichlmair, Hubert Park, Jong-mun Bergmann, Alexander Maierhofer, Paul | Assignee: ams International AG Technische Universität Graz | IPC: G01N1/22 | ||||
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8 | US2020400544A1 |
INTEGRATED FILTER-BASED PARTICULATE MATTER SENSORS
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Publication/Patent Number: US2020400544A1 | Publication Date: 2020-12-24 | Application Number: 16/772,457 | Filing Date: 2018-12-13 | Inventor： Etschmaier, Harald Roehrer, Georg Singulani, Anderson Enichlmair, Hubert Park, Jong-mun Bergmann, Alexander Maierhofer, Paul | Assignee: ams International AG Technische Universität Graz | IPC: G01N15/06 | Abstract: An apparatus for sensing particulate matter in a fluid includes a substrate; and an integrated circuit electrically connected to the substrate, the integrated circuit including a photodetector. The apparatus includes a filter assembly including a particle filter aligned with the photodetector, and a filter housing for the particle filter, the filter housing defining a flow path for fluid through the particle filter. The apparatus includes a light source electrically connected to the substrate and positioned to illuminate the particle filter. | |||
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9 | US10453972B2 |
Integrated optical sensor and method of producing an integrated optical sensor
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Publication/Patent Number: US10453972B2 | Publication Date: 2019-10-22 | Application Number: 15/533,989 | Filing Date: 2015-12-04 | Inventor： Enichlmair, Hubert | Assignee: ams AG | IPC: H01L31/0232 | Abstract: An integrated optical sensor comprises a semiconductor substrate (1), an integrated circuit (2), a dielectric layer (6), a wiring (4), a structured filter layer (7) and a diffuser (10). The semiconductor substrate (1) has a main surface (11) and the integrated circuit (2) is arranged in the substrate (1) at or near the main surface (11). Furthermore, the integrated circuit (2) comprises at least one light sensitive component (3). The dielectric layer (6) comprises at least one compound of the semiconductor material. The dielectric layer (6) is arranged on or above the main surface (11). The wiring (4) is arranged in the dielectric layer (6) and provides an electrical connection to the integrated circuit (2), i.e. the wiring is connected to the integrated circuit (2). The structured filter layer (7) is arranged on the dielectric layer (6) and faces the at least one light sensitive component (3), i.e. the diffusor (10) is positioned over the structured filter layer (7). In particular, the structured filter layer (7) is adapted for diffused incident light. The diffuser (10) is arranged on the structured filter layer (7). | |||
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10 | EP3462148A1 |
OPTICAL SENSING DEVICE AND METHOD FOR MANUFACTURING AN OPTICAL SENSING DEVICE
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Publication/Patent Number: EP3462148A1 | Publication Date: 2019-04-03 | Application Number: 17193871.5 | Filing Date: 2017-09-28 | Inventor： Enichlmair, Hubert Eilmsteiner, Gerhard | Assignee: ams AG | IPC: G01J3/26 | Abstract: An optical sensing device (10) comprises a photodetector array (11) comprising at least one first photodetector (12) and at least one second photodetector (13), the photodetector array (11) being arranged on a semiconductor substrate (14). The optical sensing device (10) further comprises a filter stack (15) arranged on the substrate (14) and covering the photodetector array (11). The filter stack (15) comprises at least two first lower dielectric mirrors (16) and at least two second lower dielectric mirrors (17), where a first and a second lower mirror (16, 17) are arranged above the first photodetector (12) and a first and a second lower mirror (16, 17) are arranged above the second photodetector (13), and where the first lower mirrors (16) have a different thickness in vertical direction (z) which is perpendicular to the main plane of extension of the substrate (14) than the second lower mirrors (17). The filter stack (15) further comprises a spacer stack (18) arranged on the first and second lower mirrors (16, 17), and an upper dielectric mirror (19) arranged on the spacer stack (18) and covering the photodetector array (11). Furthermore, a method for manufacturing an optical sensing device (10) is provided. | |||
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11 | KR102053561B1 |
광 검출 장치 및 광 검출 장치를 제조하는 방법
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Publication/Patent Number: KR102053561B1 | Publication Date: 2019-12-06 | Application Number: 20187016060 | Filing Date: 2016-11-29 | Inventor： Eilmsteiner, Gerhard Enichlmair, Hubert | Assignee: AMS AG | IPC: G01J3/26 | Abstract: 광 검출 장치는 제1 및 제2 광 검출기(S1, S2)를 지지하는 기판(S1) 및 기판 상에 배치되고 광 검출기 어레이를 덮는 필터 스택을 포함한다. 필터 스택은 대역 통과 필터(BP), 대역 통과 필터(BP) 상에 배치된 디커플링층(DL) 및 디커플링층(DL) 상에 배치된 하부 유전체 거울(LM)을 포함한다. 필터 스택은 제1 유전체 재료를 포함하고 광 검출기 어레이를 덮는 하부 유전체 거울(LM) 상에 배치된 주 스페이서층(SP)을 갖는 스페이서 스택을 포함한다. 스페이서 스택은 제1 유전체 재료를 포함하는 제1 스페이서층(S1)을 포함하며, 제1 스페이서층(S1)의 제1 세그먼트는 주 스페이서층(SP) 상에 배치되고 제2 광 검출기를 덮으며, 제1 광 검출기(P1)를 덮지 않는다. 필터 스택은 스페이서 스택 상에 배치된 상부 유전체 거울(UM)를 포함한다. | |||
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12 | WO2019063238A1 |
OPTICAL SENSING DEVICE AND METHOD FOR MANUFACTURING AN OPTICAL SENSING DEVICE
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Publication/Patent Number: WO2019063238A1 | Publication Date: 2019-04-04 | Application Number: 2018073374 | Filing Date: 2018-08-30 | Inventor： Enichlmair, Hubert Eilmsteiner, Gerhard | Assignee: AMS AG | IPC: G01J3/26 | Abstract: An optical sensing device (10) comprises a photodetector array (11) comprising at least one first photodetector (12) and at least one second photodetector (13), the photodetector array (11) being arranged on a semiconductor substrate (14). The optical sensing device (10) further comprises a filter stack (15) arranged on the substrate (14) and covering the photodetector array (11). The filter stack (15) comprises at least two first lower dielectric mirrors (16) and at least two second lower dielectric mirrors (17), where a first and a second lower mirror (16, 17) are arranged above the first photodetector (12) and a first and a second lower mirror (16, 7) are arranged above the second photodetector (13), and where the first lower mirrors (16) have a different thickness in vertical direction (z) which is perpendicular to the main plane of extension of the substrate (14) than the second lower mirrors (17). The filter stack (15) further comprises a spacer stack (18) arranged on the first and second lower mirrors (16, 17), and an upper dielectric mirror (19) arranged on the spacer stack (18) and covering the photodetector array (11). Furthermore, a method for manufacturing an optical sensing device (10) is provided. | |||
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13 | US2019237500A1 |
3D-INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING A 3D-INTEGRATED OPTICAL SENSOR
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Publication/Patent Number: US2019237500A1 | Publication Date: 2019-08-01 | Application Number: 16/312,145 | Filing Date: 2017-06-02 | Inventor： Manninger, Mario Bodner, Thomas Toschkoff, Gregor Schrems, Martin Enichlmair, Hubert | Assignee: ams AG | IPC: H01L27/146 | Abstract: A 3D-Integrated optical sensor comprises a semiconductor substrate, an integrated circuit, a wiring, a filter layer, a transparent spacer layer, and an on-chip diffuser. The semiconductor substrate has a main surface. The integrated circuit comprises at least one light sensitive area and is arranged in the substrate at or near the main surface. The wiring provides an electrical connection to the integrated circuit and is connected to the integrated circuit. The wiring is arranged on or in the semiconductor substrate. The filter layer has a direction dependent transmission characteristic and is arranged on the integrated circuit. In fact, the filter layer at least covers the light sensitive area. The transparent spacer layer is arranged on the main surface and, at least partly, encloses the filter layer. A spacer thickness is arranged to limit a spectral shift of the filter layer. The on-chip diffuser is arranged on the transparent spacer layer. | |||
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14 | EP3261122B1 |
3D-INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING A 3D-INTEGRATED OPTICAL SENSOR
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Publication/Patent Number: EP3261122B1 | Publication Date: 2019-10-30 | Application Number: 16176222.4 | Filing Date: 2016-06-24 | Inventor： Enichlmair, Hubert Schrems, Martin Toschkoff, Gregor Bodner, Thomas Manninger, Mario | Assignee: ams AG | IPC: H01L27/146 | ||||
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15 | US10468541B2 |
Semiconductor device with through-substrate via and corresponding method of manufacture
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Publication/Patent Number: US10468541B2 | Publication Date: 2019-11-05 | Application Number: 15/107,901 | Filing Date: 2014-12-12 | Inventor： Schrank, Franz Carniello, Sara Enichlmair, Hubert Kraft, Jochen Loeffler, Bernhard Holzhaider, Rainer | Assignee: ams AG | IPC: H01L31/0224 | Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening. | |||
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16 | WO2019115690A1 |
INTEGRATED FILTER-BASED PARTICULATE MATTER SENSORS
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Publication/Patent Number: WO2019115690A1 | Publication Date: 2019-06-20 | Application Number: 2018084759 | Filing Date: 2018-12-13 | Inventor： Enichlmair, Hubert Bergmann, Alexander Roehrer, Georg Singulani, Anderson Maierhofer, Paul Etschmaier, Harald Park, Jong-mun | Assignee: TECHNISCHE UNIVERSITäT GRAZ AMS INTERNATIONAL AG | IPC: G01N15/06 | Abstract: An apparatus for sensing particulate matter in a fluid includes a substrate; and an integrated circuit electrically connected to the substrate, the integrated circuit including a photodetector. The apparatus includes a filter assembly including a particle filter aligned with the photodetector, and a filter housing for the particle filter, the filter housing defining a flow path for fluid through the particle filter. The apparatus includes a light source electrically connected to the substrate and positioned to illuminate the particle filter. | |||
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17 | US2018337291A1 |
INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING AN INTEGRATED OPTICAL SENSOR
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Publication/Patent Number: US2018337291A1 | Publication Date: 2018-11-22 | Application Number: 15/533,989 | Filing Date: 2015-12-04 | Inventor： Enichlmair, Hubert | Assignee: ams AG | IPC: H01L31/0216 | Abstract: An integrated optical sensor comprises a semiconductor substrate (1), an integrated circuit (2), a dielectric layer (6), a wiring (4), a structured filter layer (7) and a diffuser (10). The semiconductor substrate (1) has a main surface (11) and the integrated circuit (2) is arranged in the substrate (1) at or near the main surface (11). Furthermore, the integrated circuit (2) comprises at least one light sensitive component (3). The dielectric layer (6) comprises at least one compound of the semiconductor material. The dielectric layer (6) is arranged on or above the main surface (11). The wiring (4) is arranged in the dielectric layer (6) and provides an electrical connection to the integrated circuit (2), i.e. the wiring is connected to the integrated circuit (2). The structured filter layer (7) is arranged on the dielectric layer (6) and faces the at least one light sensitive component (3), i.e. the diffusor (10) is positioned over the structured filter layer (7). In particular, the structured filter layer (7) is adapted for diffused incident light. The diffuser (10) is arranged on the structured filter layer (7). | |||
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18 | EP3404379A1 |
OPTICAL DEVICE FOR ANGLE MEASUREMENTS
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Publication/Patent Number: EP3404379A1 | Publication Date: 2018-11-21 | Application Number: 17171125.2 | Filing Date: 2017-05-15 | Inventor： Enichlmair, Hubert | Assignee: AMS AG | IPC: G01J1/04 | Abstract: The device comprises a substrate (1) of semiconductor material with a main surface (10), a photodetector (4) and a further photodetector (5) arranged in the substrate at the main surface, a filter (6) arranged above the main surface (10) above the photodetector (4), and a further filter (7) arranged above the main surface (10) above the further photodetector (5). The filter (6) is a colour filter (16), and the further filter (7) includes an interference filter (15) and a further colour filter (17). | |||
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19 | EP2899760B1 |
Semiconductor device for optical applications and method of producing such a semiconductor device
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Publication/Patent Number: EP2899760B1 | Publication Date: 2018-08-29 | Application Number: 14152688.9 | Filing Date: 2014-01-27 | Inventor： Enichlmair, Hubert Schrank, Franz | Assignee: ams AG | IPC: H01L31/0203 | Abstract: A sensor (2) is arranged at a main surface (10) of a semiconductor substrate (1), and a filter (3) is arranged above the sensor. A through-substrate via (4) penetrates the substrate outside the region of the sensor. A semiconductor body is applied above the main surface and then partially removed at least in an area above the sensor. A portion of the semiconductor body remains above the through-substrate via as a frame layer (5). The filter is on a level with the frame layer. | |||
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20 | US10084004B2 |
Semiconductor device for optical applications and method of producing such a semiconductor device
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Publication/Patent Number: US10084004B2 | Publication Date: 2018-09-25 | Application Number: 15/114,387 | Filing Date: 2015-01-14 | Inventor： Enichlmair, Hubert Schrank, Franz | Assignee: AMS AG | IPC: H01L31/0232 | Abstract: A sensor (2) is arranged at a main surface (10) of a semiconductor substrate (1), and a filter (3) is arranged above the sensor. A through-substrate via (4) penetrates the substrate outside the region of the sensor. A semiconductor body is applied above the main surface and then partially removed at least in an area above the sensor. A portion of the semiconductor body remains above the through-substrate via as a frame layer (5). The filter is on a level with the frame layer. |
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