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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
1 EP2636068B1
MONOLITHIC MULTISPECTRAL VISIBLE-AND-INFRARED IMAGER
Publication/Patent Number: EP2636068B1 Publication Date: 2020-03-11 Application Number: 11787702.7 Filing Date: 2011-11-03 Inventor: Giffard, Benoit   Cazaux, Yvon   Moussy, Norbert   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H01L27/146
2 US10613202B2
Time-of-flight detection pixel
Publication/Patent Number: US10613202B2 Publication Date: 2020-04-07 Application Number: 16/194,985 Filing Date: 2018-11-19 Inventor: Roy, Francois   Goncalves, Boris Rodrigues   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/486 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
3 US10264242B2
Image sensor for capturing 2D image and depth
Publication/Patent Number: US10264242B2 Publication Date: 2019-04-16 Application Number: 15/829,662 Filing Date: 2017-12-01 Inventor: Cazaux, Yvon   Giffard, Benoit   Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES   IPC: H04N13/286 Abstract: The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); and a third memory (mem3) electrically coupled to the detection zone by a third gate (316), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (404, 406), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (P1 to P8) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels. The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); ...More Less
4 US2019086519A1
TIME-OF-FLIGHT DETECTION PIXEL
Publication/Patent Number: US2019086519A1 Publication Date: 2019-03-21 Application Number: 16/194,985 Filing Date: 2018-11-19 Inventor: Roy, Francois   Rodrigues, Goncalves Boris   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/486 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
5 EP2636066B1
VISIBLE AND NEAR-INFRARED RADIATION DETECTOR
Publication/Patent Number: EP2636066B1 Publication Date: 2018-09-05 Application Number: 11785716.9 Filing Date: 2011-11-03 Inventor: Cazaux, Yvon   Giffard, Benoit   Hugon, Xavier   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H01L27/146
6 US9880057B2
Visible and near-infrared radiation detector
Publication/Patent Number: US9880057B2 Publication Date: 2018-01-30 Application Number: 13/882,944 Filing Date: 2011-11-03 Inventor: Cazaux, Yvon   Giffard, Benoit   Hugon, Xavier   Assignee: Cazaux, Yvon   Giffard, Benoit   Hugon, Xavier   Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: G01J5/08 Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive ...More Less
7 US10162048B2
Time-of-flight detection pixel
Publication/Patent Number: US10162048B2 Publication Date: 2018-12-25 Application Number: 15/392,032 Filing Date: 2016-12-28 Inventor: Roy, Francois   Rodrigues, Boris   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/48 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
8 US2017373118A1
OPTOELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES
Publication/Patent Number: US2017373118A1 Publication Date: 2017-12-28 Application Number: 20/151,553 Filing Date: 2015-12-24 Inventor: Giffard, Benoit   Assignee: Aledia   IPC: H01L27/15 Abstract: An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining
9 EP2398230B1
Linear image sensor using CMOS technology
Publication/Patent Number: EP2398230B1 Publication Date: 2017-05-03 Application Number: 11354031.4 Filing Date: 2011-05-26 Inventor: Giffard, Benoit   Cazaux, Yvon   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H04N5/372 Abstract: The image sensor has matrix of photosensitive pixels (10) which are organized in rows and columns. The analog-to-digital converters are provided for each column and receiving outputs of pixels of column through column bus. A control circuit is configured to organize read of pixels on column busses and write of outputs of converters respectively in memory cell matrices so as to store accumulated brightness levels of rows of pixel matrix portions in row of memory cell matrixes. An adder is connected to sum levels accumulated in row of memory cell matrixes. An independent claim is included for method for managing time-delay-integration image sensor. The image sensor has matrix of photosensitive pixels (10) which are organized in rows and columns. The analog-to-digital converters are provided for each column and receiving outputs of pixels of column through column bus. A control circuit is configured to organize read of ...More Less
10 EP2636067B1
DETECTOR OF VISIBLE AND NEAR-INFRARED RADIATION
Publication/Patent Number: EP2636067B1 Publication Date: 2017-12-06 Application Number: 11785717.7 Filing Date: 2011-11-03 Inventor: Cazaux, Yvon   Giffard, Benoit   Hugon, Xavier   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: G01J5/20
11 US9854632B2
Optoelectronic circuit with low-flicker light-emitting diodes
Publication/Patent Number: US9854632B2 Publication Date: 2017-12-26 Application Number: 20/151,532 Filing Date: 2015-07-08 Inventor: Dornel, Erwan   Giffard, Benoit   Mercier, FrÉdÉric   Assignee: Aledia   IPC: H01L27/15 Abstract: An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals. Each resistive element is inserted between two consecutive sets. The optoelectronic circuit includes An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals ...More Less
12 FR3046494A1
PIXEL DE DETECTION DE TEMPS DE VOL
Title (English): Flight time pixel
Publication/Patent Number: FR3046494A1 Publication Date: 2017-07-07 Application Number: 1662341 Filing Date: 2016-12-12 Inventor: Roy, Francois   Giffard, Benoit   Cazaux, Yvon   Guillon, Marie   Rodrigues, Boris   Assignee: Commissariat a l'Energie Atomique Et Aux Energies Alternatives   STMICROELECTRONICS (CROLLES 2) SAS   IPC: G01S17/89 Abstract: L'invention concerne un pixel (40) comprenant un substrat semiconducteur comportant : une zone photosensible comportant une première couche dopée d'un premier type et une zone de collection de charges (45) plus fortement dopée du premier type que la première couche et s'étendant à travers la première couche ; au moins deux zones de stockage de charges (mem1 L'invention concerne un pixel (40) comprenant un substrat semiconducteur comportant : une zone photosensible comportant une première couche dopée d'un premier type et une zone de collection de charges (45) plus fortement dopée du premier type que la première couche et s'étendant ...More Less
13 US2017194368A1
TIME-OF-FLIGHT DETECTION PIXEL
Publication/Patent Number: US2017194368A1 Publication Date: 2017-07-06 Application Number: 15/392,032 Filing Date: 2016-12-28 Inventor: Roy, Francois   Rodrigues, Boris   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   Commissariat A L'Energie Atomique et aux Energies Alternatives   IPC: H01L27/146 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
14 FR2966976B1
IMAGEUR MONOLITHIQUE MULTISPECTRAL VISIBLE ET INFRAROUGE
Title (English): A visible, infrared multi-spectral single-chip microcomputer imaging device
Publication/Patent Number: FR2966976B1 Publication Date: 2016-07-29 Application Number: 1004314 Filing Date: 2010-11-03 Inventor: Moussy, Norbert   Giffard, Benoit   Cazaux, Yvon   Assignee: Commissariat a l'Energie Atomique Et Aux Energies Alternatives   IPC: H01L27/146 Abstract: L'invention concerne un dispositif de détection de rayonnement comprenant un substrat en silicium (11) et une photodiode infrarouge (21) en un matériau optimisé pour la détection infrarouge (22). Le substrat comprend une zone photosensible (13)
15 FR2966978B1
DETECTEUR DE RAYONNEMENT VISIBLE ET PROCHE INFRAROUGE
Title (English): A visible and near infrared radiation detecto
Publication/Patent Number: FR2966978B1 Publication Date: 2016-04-01 Application Number: 1004318 Filing Date: 2010-11-03 Inventor: Hugon, Xavier   Giffard, Benoit   Cazaux, Yvon   Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES   IPC: G01J3/18 Abstract: Le détecteur comprend quatre éléments photosensibles (32) formés dans un substrat en silicium (14) ; quatre circuits de lecture (34) des éléments photosensibles (32) formés dans le substrat en silicium (14) ; et quatre filtres recouvrant le substrat en silicium (14) de manière à définir un quadruplet de pixels dont un premier pixel (54) est muni d'un filtre (52d) opaque au rayonnement visible et les trois autres pixels (48a-48c) sont munis respectivement de filtres (52a Le détecteur comprend quatre éléments photosensibles (32) formés dans un substrat en silicium (14) ; quatre circuits de lecture (34) des éléments photosensibles (32) formés dans le substrat en silicium (14) ; et quatre filtres recouvrant le substrat en silicium (14) de manière à ...More Less
16 US9245915B2
Monolithic multispectral visible and infrared imager
Publication/Patent Number: US9245915B2 Publication Date: 2016-01-26 Application Number: 13/882,441 Filing Date: 2011-11-03 Inventor: Giffard, Benoit   Cazaux, Yvon   Moussy, Norbert   Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES   IPC: H01L27/146 Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode. The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an ...More Less
17 FR2966977B1
DETECTEUR DE RAYONNEMENT VISIBLE ET PROCHE INFRAROUGE
Title (English): A visible and near infrared radiation detecto
Publication/Patent Number: FR2966977B1 Publication Date: 2016-02-26 Application Number: 1004317 Filing Date: 2010-11-03 Inventor: Hugon, Xavier   Giffard, Benoit   Cazaux, Yvon   Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES   IPC: G01J3/28 Abstract: Le détecteur visible et proche infrarouge comprend un élément photosensible 36 dans le proche infrarouge formé dans une couche 30 en matériau optimisé pour la détection du proche infrarouge
18 US9379158B2
Optical detector unit
Publication/Patent Number: US9379158B2 Publication Date: 2016-06-28 Application Number: 14/361,152 Filing Date: 2012-11-29 Inventor: Giffard, Benoit   Hugon, Xavier   Moussy, Norbert   Reverchon, Jean-luc   Bois, Philippe   Assignee: THALES   COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES   IPC: G01J5/00 Abstract: This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit. This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons ...More Less
19 US9040916B2
Visible and near-infrared radiation detector
Publication/Patent Number: US9040916B2 Publication Date: 2015-05-26 Application Number: 13/882,914 Filing Date: 2011-11-03 Inventor: Cazaux, Yvon   Giffard, Benoit   Hugon, Xavier   Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES   IPC: G01J5/20 Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers. The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive ...More Less
20 US8817150B2
Linear image sensor in CMOS technology
Publication/Patent Number: US8817150B2 Publication Date: 2014-08-26 Application Number: 13/152,333 Filing Date: 2011-06-03 Inventor: Giffard, Benoit   Cazaux, Yvon   Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives   IPC: H04N3/14 Abstract: A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state. A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel ...More Less