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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1 EP2748852B1
PIXEL-GROUPING IMAGE SENSOR
Publication/Patent Number: EP2748852B1 Publication Date: 2020-02-05 Application Number: 12740947.2 Filing Date: 2012-07-25 Inventor: Mayer, Frédéric   Guillon, Marie   Assignee: Teledyne e2v Semiconductors SAS   IPC: H01L27/146
2 US10613202B2
Time-of-flight detection pixel
Publication/Patent Number: US10613202B2 Publication Date: 2020-04-07 Application Number: 16/194,985 Filing Date: 2018-11-19 Inventor: Roy, Francois   Goncalves, Boris Rodrigues   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/486 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
3 US10468440B2
Storage zone for an image array pixel
Publication/Patent Number: US10468440B2 Publication Date: 2019-11-05 Application Number: 15/959,763 Filing Date: 2018-04-23 Inventor: Saxod, Olivier   Guillon, Marie   Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: H01L27/146 Abstract: The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive charge accumulated by a photodiode; a second charge storage trench (204) doped to have the first conductivity type; and a first transfer gate (212) linking a second end (214) of the first charge storage trench (202) and the second charge storage trench (202, 204) to a sense node (216), wherein the first and second charge storage trenches are linked together by a linking channel (206) doped to have the first conductivity type and bordering a portion of an edge of the transfer gate (212). The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive ...More Less
4 US10488499B2
Time-of-flight detection pixel
Publication/Patent Number: US10488499B2 Publication Date: 2019-11-26 Application Number: 15/387,883 Filing Date: 2016-12-22 Inventor: Roy, Francois   Guillon, Marie   Cazaux, Yvon   Rodrigues, Boris   Rochas, Alexis   Assignee: STMicroelectronics (Crolles 2) SAS   Commissariat A L'Energie Atomique et aux Energies Alternatives   IPC: G01S7/486 Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate. A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped ...More Less
5 US10170513B2
Image sensor with vertical electrodes
Publication/Patent Number: US10170513B2 Publication Date: 2019-01-01 Application Number: 15/713,639 Filing Date: 2017-09-23 Inventor: Cazaux, Yvon   Roy, François   Guillon, Marie   Laflaquiere, Arnaud   Assignee: Commissariat à l'Energie Atomique et aux Energies   STMICROELECTRONICS (CROLLES 2) SAS   STMICROELECTRONICS (GRENOBLE 2) SAS   IPC: H01L27/146 Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening. An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and ...More Less
6 US2019086519A1
TIME-OF-FLIGHT DETECTION PIXEL
Publication/Patent Number: US2019086519A1 Publication Date: 2019-03-21 Application Number: 16/194,985 Filing Date: 2018-11-19 Inventor: Roy, Francois   Rodrigues, Goncalves Boris   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/486 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
7 US2018315784A1
STORAGE ZONE FOR AN IMAGE ARRAY PIXEL
Publication/Patent Number: US2018315784A1 Publication Date: 2018-11-01 Application Number: 15/959,763 Filing Date: 2018-04-23 Inventor: Saxod, Olivier   Guillon, Marie   Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives   IPC: H01L27/146 Abstract: The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive charge accumulated by a photodiode; a second charge storage trench (204) doped to have the first conductivity type; and a first transfer gate (212) linking a second end (214) of the first charge storage trench (202) and the second charge storage trench (202, 204) to a sense node (216), wherein the first and second charge storage trenches are linked together by a linking channel (206) doped to have the first conductivity type and bordering a portion of an edge of the transfer gate (212). The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive ...More Less
8 EP3013037B1
PIXEL OF IMAGE SENSOR HAVING MULTIPLE DETECTION NODE GAINS
Publication/Patent Number: EP3013037B1 Publication Date: 2018-06-27 Application Number: 15190265.7 Filing Date: 2015-10-16 Inventor: Guillon, Marie   Cazaux, Yvon   Segura, Puchades Josep   Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES   IPC: H04N5/355 Abstract: L'invention concerne un capteur d'image comprenant : au moins un pixel comportant une photodiode (PD) ; un noeud de détection (SN) couplé à la photodiode par l'intermédiaire d'une porte de transfert (104) ; et un autre noeud (AN) couplé au noeud de détection (SN) par l'intermédiaire d'un premier transistor (112) ; et un circuit de commande (120) adapté à : appliquer, pendant une opération de réinitialisation des niveaux de tension sur le noeud de détection (SN) et l'autre noeud (AN), un premier niveau de tension (VDD) à un noeud de commande du premier transistor (112) ; et appliquer, pendant une opération de transfert de charge à partir de la photodiode (PD) vers le noeud de détection (SN), un deuxième niveau de tension (VSK) au noeud de commande du premier transistor (112), le deuxième niveau de tension étant inférieur au premier niveau de tension et supérieur à une tension de masse du pixel. L'invention concerne un capteur d'image comprenant : au moins un pixel comportant une photodiode (PD) ; un noeud de détection (SN) couplé à la photodiode par l'intermédiaire d'une porte de transfert (104) ; et un autre noeud (AN) couplé au noeud de détection (SN) par ...More Less
9 EP3188238B1
PIXEL FOR DETECTING FLIGHT TIME
Publication/Patent Number: EP3188238B1 Publication Date: 2018-04-25 Application Number: 16203843.4 Filing Date: 2016-12-13 Inventor: Roy, François   Guillon, Marie   Cazaux, Yvon   Rodrigues, Boris   Rochas, Alexis   Assignee: STMicroelectronics (Crolles 2) SAS   COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES   IPC: H01L27/146 Abstract: L'invention concerne un pixel (40) de détection de temps de vol comprenant une zone photosensible (PD) comportant une première couche (43) dopée N1 ; une zone de collection de charges (47) s'étendant dans la première couche et étant plus fortement dopée N2 que la première couche ; au moins deux zones de stockage de charges (mem1, mem2, mem3, mem4) s'étendant à partir de la zone de collection et comprenant chacune un premier caisson (51) plus fortement dopé N3 que la zone de collection et séparé de ladite zone de collection par une première portion (59) de la première couche revêtue d'une première grille (61), chaque zone de stockage de charges étant délimitée latéralement par deux électrodes conductrices isolées (53), parallèles et en vis-à-vis ; et une deuxième couche (45) fortement dopée P+ revêtant le pixel à l'exception de chaque portion (59, 65) de la première couche revêtue d'une grille (61, 67). L'invention concerne un pixel (40) de détection de temps de vol comprenant une zone photosensible (PD) comportant une première couche (43) dopée N1 ; une zone de collection de charges (47) s'étendant dans la première couche et étant plus fortement dopée N2 que la première couche ...More Less
10 US10162048B2
Time-of-flight detection pixel
Publication/Patent Number: US10162048B2 Publication Date: 2018-12-25 Application Number: 15/392,032 Filing Date: 2016-12-28 Inventor: Roy, Francois   Rodrigues, Boris   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: G01S7/48 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
11 US9917124B2
Image sensor with vertical electrodes
Publication/Patent Number: US9917124B2 Publication Date: 2018-03-13 Application Number: 14/919,836 Filing Date: 2015-10-22 Inventor: Guillon, Marie   Laflaquiere, Arnaud   Roy, François   Cazaux, Yvon   Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: H01L27/12 Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening. An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and ...More Less
12 KR101747487B1
2 - TWO-LINE SHARED-PIXEL LINEAR IMAGE SENSOR
Publication/Patent Number: KR101747487B1 Publication Date: 2017-06-14 Application Number: 20137021172 Filing Date: 2012-02-10 Inventor: Ligozat, Thierry   Guillon, Marie   Assignee: E2V Semiconductors   IPC: H04N5/341 Abstract: 본 발명은 한 번에 하나의 이미지 라인을 관측하는 스캐너 이미지 센서들에 관한 것이다. 본 발명에 따르면
13 TWI574564B
Liner image sensor with two lines and with shared pixels
Publication/Patent Number: TWI574564B Publication Date: 2017-03-11 Application Number: 101104206 Filing Date: 2012-02-09 Inventor: Ligozat, Thierry   Guillon, Marie   Assignee: E2V Semiconductors   IPC: H04N5/347 Abstract: The invention relates to image sensors of scanner type observing one image line at a time. According to the invention
14 US9736411B2
Image sensor pixel having multiple sensing node gains
Publication/Patent Number: US9736411B2 Publication Date: 2017-08-15 Application Number: 14/918,195 Filing Date: 2015-10-20 Inventor: Guillon, Marie   Cazaux, Yvon   Segura, Puchades Josep   Assignee: Commissariat à l'Eneragie Atomique et aux Energies Alternatives   IPC: H04N3/14 Abstract: The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel. The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit ...More Less
15 FR3027479B1
PIXEL DE CAPTEUR D'IMAGE AYANT DE MULTIPLES GAINS DE NOEUD DE DETECTION
Title (English): Image sensor pixel with multiple touch junction gain
Publication/Patent Number: FR3027479B1 Publication Date: 2017-12-29 Application Number: 1460106 Filing Date: 2014-10-21 Inventor: Cazaux, Yvon   Segura, Puchades Josep   Guillon, Marie   Assignee: Commissariat a l'Energie Atomique Et Aux Energies Alternatives   IPC: H04N5/374 Abstract: L'invention concerne un capteur d'image comprenant : au moins un pixel comportant une photodiode (PD) ; un noeud de détection (SN) couplé à la photodiode par l'intermédiaire d'une porte de transfert (104) ; et un autre noeud (AN) couplé au noeud de détection (SN) par l'intermédiaire d'un premier transistor (112) ; et un circuit de commande (120) adapté à : appliquer L'invention concerne un capteur d'image comprenant : au moins un pixel comportant une photodiode (PD) ; un noeud de détection (SN) couplé à la photodiode par l'intermédiaire d'une porte de transfert (104) ; et un autre noeud (AN) couplé au noeud de détection (SN) par ...More Less
16 EP3188238A1
PIXEL FOR DETECTING FLIGHT TIME
Publication/Patent Number: EP3188238A1 Publication Date: 2017-07-05 Application Number: 16203843.4 Filing Date: 2016-12-13 Inventor: Roy, François   Guillon, Marie   Cazaux, Yvon   Rodrigues, Boris   Rochas, Alexis   Assignee: STMicroelectronics (Crolles 2) SAS   COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES   IPC: H01L27/146 Abstract: L'invention concerne un pixel (40) de détection de temps de vol comprenant une zone photosensible (PD) comportant une première couche (43) dopée N1 ; une zone de collection de charges (47) s'étendant dans la première couche et étant plus fortement dopée N2 que la première couche ; au moins deux zones de stockage de charges (mem1, mem2, mem3, mem4) s'étendant à partir de la zone de collection et comprenant chacune un premier caisson (51) plus fortement dopé N3 que la zone de collection et séparé de ladite zone de collection par une première portion (59) de la première couche revêtue d'une première grille (61), chaque zone de stockage de charges étant délimitée latéralement par deux électrodes conductrices isolées (53), parallèles et en vis-à-vis ; et une deuxième couche (45) fortement dopée P+ revêtant le pixel à l'exception de chaque portion (59, 65) de la première couche revêtue d'une grille (61, 67). L'invention concerne un pixel (40) de détection de temps de vol comprenant une zone photosensible (PD) comportant une première couche (43) dopée N1 ; une zone de collection de charges (47) s'étendant dans la première couche et étant plus fortement dopée N2 que la première couche ...More Less
17 US2017192090A1
TIME-OF-FLIGHT DETECTION PIXEL
Publication/Patent Number: US2017192090A1 Publication Date: 2017-07-06 Application Number: 15/387,883 Filing Date: 2016-12-22 Inventor: Roy, Francois   Guillon, Marie   Cazaux, Yvon   Rodrigues, Boris   Rochas, Alexis   Assignee: STMicroelectronics (Crolles 2) SAS   Commissariat A L'Energie Atomique et aux Energies Alternatives   IPC: G01S7/486 Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate. A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped ...More Less
18 FR3046494A1
PIXEL DE DETECTION DE TEMPS DE VOL
Title (English): Flight time pixel
Publication/Patent Number: FR3046494A1 Publication Date: 2017-07-07 Application Number: 1662341 Filing Date: 2016-12-12 Inventor: Roy, Francois   Giffard, Benoit   Cazaux, Yvon   Guillon, Marie   Rodrigues, Boris   Assignee: Commissariat a l'Energie Atomique Et Aux Energies Alternatives   STMICROELECTRONICS (CROLLES 2) SAS   IPC: G01S17/89 Abstract: L'invention concerne un pixel (40) comprenant un substrat semiconducteur comportant : une zone photosensible comportant une première couche dopée d'un premier type et une zone de collection de charges (45) plus fortement dopée du premier type que la première couche et s'étendant à travers la première couche ; au moins deux zones de stockage de charges (mem1 L'invention concerne un pixel (40) comprenant un substrat semiconducteur comportant : une zone photosensible comportant une première couche dopée d'un premier type et une zone de collection de charges (45) plus fortement dopée du premier type que la première couche et s'étendant ...More Less
19 US2017194368A1
TIME-OF-FLIGHT DETECTION PIXEL
Publication/Patent Number: US2017194368A1 Publication Date: 2017-07-06 Application Number: 15/392,032 Filing Date: 2016-12-28 Inventor: Roy, Francois   Rodrigues, Boris   Guillon, Marie   Cazaux, Yvon   Giffard, Benoit   Assignee: STMicroelectronics (Crolles 2) SAS   Commissariat A L'Energie Atomique et aux Energies Alternatives   IPC: H01L27/146 Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas. A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a ...More Less
20 FR3046495A1
PIXEL DE DETECTION DE TEMPS DE VOL
Title (English): pixels for detecting time of flight
Publication/Patent Number: FR3046495A1 Publication Date: 2017-07-07 Application Number: 1563457 Filing Date: 2015-12-30 Inventor: Roy, Francois   Cazaux, Yvon   Guillon, Marie   Rodrigues, Boris   Rochas, Alexis   Assignee: Commissariat a l'Energie Atomique Et Aux Energies Alternatives   STMICROELECTRONICS (CROLLES 2) SAS   IPC: G01S17/08 Abstract: L'invention concerne un pixel (40) de détection de temps de vol comprenant une zone photosensible (PD) comportant une première couche (43) dopée N1 ; une zone de collection de charges (47) s'étendant dans la première couche et étant plus fortement dopée N2 que la première couche ; au moins deux zones de stockage de charges (mem1 L'invention concerne un pixel (40) de détection de temps de vol comprenant une zone photosensible (PD) comportant une première couche (43) dopée N1 ; une zone de collection de charges (47) s'étendant dans la première couche et étant plus fortement dopée N2 que la première couche ...More Less