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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
1
US2021091132A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATIVELY ARRANGED PIXEL COMBINATIONS
Publication/Patent Number: US2021091132A1 Publication Date: 2021-03-25 Application Number: 17/114,071 Filing Date: 2020-12-07 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
2
US10896924B2
Solid-state imaging device, manufacturing method thereof, and camera with alternatively arranged pixel combinations
Publication/Patent Number: US10896924B2 Publication Date: 2021-01-19 Application Number: 16/791,681 Filing Date: 2020-02-14 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N3/14 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
3
US10692909B2
Solid-state imaging device, manufacturing method thereof, and camera with alternatively arranged pixel combinations
Publication/Patent Number: US10692909B2 Publication Date: 2020-06-23 Application Number: 16/204,313 Filing Date: 2018-11-29 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N3/14 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
4
US10770495B1
Solid-state imaging device, manufacturing method thereof, and camera with alternatively arranged pixel combinations
Publication/Patent Number: US10770495B1 Publication Date: 2020-09-08 Application Number: 16/890,844 Filing Date: 2020-06-02 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N3/14 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
5
US2020295067A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATIVELY ARRANGED PIXEL COMBINATIONS
Publication/Patent Number: US2020295067A1 Publication Date: 2020-09-17 Application Number: 16/890,844 Filing Date: 2020-06-02 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
6
US2020185442A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATIVELY ARRANGED PIXEL COMBINATIONS
Publication/Patent Number: US2020185442A1 Publication Date: 2020-06-11 Application Number: 16/791,681 Filing Date: 2020-02-14 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
7
US2020068152A1
IMAGE SENSOR
Publication/Patent Number: US2020068152A1 Publication Date: 2020-02-27 Application Number: 16/667,193 Filing Date: 2019-10-29 Inventor: Keel, Min-sun   Koh, Kyoungmin   Ha, Sanghoon   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H04N5/363 Abstract: An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.
8
US2019096940A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATIVELY ARRANGED PIXEL COMBINATIONS
Publication/Patent Number: US2019096940A1 Publication Date: 2019-03-28 Application Number: 16/204,313 Filing Date: 2018-11-29 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
9
US10249663B2
Solid-state imaging device, manufacturing method thereof, and camera with arranged pixel combinations alternatively
Publication/Patent Number: US10249663B2 Publication Date: 2019-04-02 Application Number: 16/045,927 Filing Date: 2018-07-26 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N3/14 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
10
US201996940A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATIVELY ARRANGED PIXEL COMBINATIONS
Publication/Patent Number: US201996940A1 Publication Date: 2019-03-28 Application Number: 20/181,620 Filing Date: 2018-11-29 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N9/04 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
11
US10484630B2
Image sensor including feedback device to reduce noise during reset operation
Publication/Patent Number: US10484630B2 Publication Date: 2019-11-19 Application Number: 15/631,278 Filing Date: 2017-06-23 Inventor: Keel, Min-sun   Koh, Kyoungmin   Ha, Sanghoon   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H04N5/363 Abstract: An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.
12
US2018358395A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ARRANGED PIXEL COMBINATIONS ALTERNATIVELY
Publication/Patent Number: US2018358395A1 Publication Date: 2018-12-13 Application Number: 16/045,927 Filing Date: 2018-07-26 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
13
US10062719B2
Solid-state imaging device, manufacturing method thereof, and camera with arranged pixel combinations alternatively
Publication/Patent Number: US10062719B2 Publication Date: 2018-08-28 Application Number: 15/425,420 Filing Date: 2017-02-06 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N3/14 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
14
US10068939B2
Solid-state imaging device, manufacturing method thereof, and camera with arranged pixel combinations alternatively
Publication/Patent Number: US10068939B2 Publication Date: 2018-09-04 Application Number: 15/424,650 Filing Date: 2017-02-03 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/225 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
15
US2018152653A1
IMAGE SENSOR
Publication/Patent Number: US2018152653A1 Publication Date: 2018-05-31 Application Number: 15/631,278 Filing Date: 2017-06-23 Inventor: Ha, Sanghoon   Koh, Kyoungmin   Keel, Min-sun   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L27/146 Abstract: An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.
16
US9793313B2
Solid-state imaging device, manufacturing method thereof, and camera with arranged pixel combinations alternatively
Publication/Patent Number: US9793313B2 Publication Date: 2017-10-17 Application Number: 14/971,666 Filing Date: 2015-12-16 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N3/14 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
17
US2017148835A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ARRANGED PIXEL COMBINATIONS ALTERNATIVELY
Publication/Patent Number: US2017148835A1 Publication Date: 2017-05-25 Application Number: 15/424,650 Filing Date: 2017-02-03 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
18
US2017148836A1
SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ARRANGED PIXEL COMBINATIONS ALTERNATIVELY
Publication/Patent Number: US2017148836A1 Publication Date: 2017-05-25 Application Number: 15/425,420 Filing Date: 2017-02-06 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
19
US9245918B2
Solid-state imaging device, manufacturing method thereof, and camera with alternately arranged pixel combinations and shared floating diffusion
Publication/Patent Number: US9245918B2 Publication Date: 2016-01-26 Application Number: 14/586,208 Filing Date: 2014-12-30 Inventor: Ishiwata, Hiroaki   Ha, Sanghoon   Assignee: Sony Corporation   IPC: H04N3/14 Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
20
US9299867B2
Method of manufacturing solid-state imaging apparatus
Publication/Patent Number: US9299867B2 Publication Date: 2016-03-29 Application Number: 14/188,052 Filing Date: 2014-02-24 Inventor: Kobayashi, Mikiko   Ha, Sanghoon   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.
Total 3 pages