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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
1
US10886249B2
Hybrid wafer-to-wafer bonding and methods of surface preparation for wafers comprising an aluminum metalization
Publication/Patent Number: US10886249B2 Publication Date: 2021-01-05 Application Number: 15/966,206 Filing Date: 2018-04-30 Inventor: Hofrichter, Jens   Assignee: ams International AG   IPC: H01L21/46 Abstract: A surface treatment solution includes a fluoride source; a first solvent; and a water transforming agent to transform water produced during wafer surface treatment into a second solvent, which can be the same as, or different from, the first solvent. The solution can be used, for example, in surface preparation for wafers having a backend including an electrical interconnect that includes aluminum or an aluminum alloy.
2
EP3690490A1
X-RAY DETECTOR COMPONENT, X-RAY DETECTION MODULE, IMAGING DEVICE AND METHOD FOR MANUFACTURING AN X-RAY DETECTOR COMPONENT
Publication/Patent Number: EP3690490A1 Publication Date: 2020-08-05 Application Number: 19155294.2 Filing Date: 2019-02-04 Inventor: Hofrichter, Jens   Assignee: ams International AG   IPC: G01T1/24 Abstract: The invention relates to an X-ray detector component (1) comprising an X-ray detector chip (22) made from a silicon substrate (21) and comprising charge collecting electrodes (10). The X-ray detector chip (22) is suitable for providing an X-ray-dependent current at the charge collecting electrodes (10). The X-ray detector component (1) further comprises a CMOS read-out circuit chip (24) comprising connection electrodes (20). The X-ray detector chip (22) and the CMOS read-out circuit chip (24) are mechanically and electrically connected in such a manner that the charge collecting electrodes (10) and the connection electrodes (20) are electrically connected. The invention further relates to an X-ray detection module (60), an imaging device and a method for manufacturing an X-ray detector component (1).
3
EP3261130B1
PHOTODETECTOR DEVICE WITH INTEGRATED HIGH-CONTRAST GRATING POLARIZER
Publication/Patent Number: EP3261130B1 Publication Date: 2020-11-18 Application Number: 16175275.3 Filing Date: 2016-06-20 Inventor: Hofrichter, Jens   Enenkel, Jan   Assignee: ams AG   IPC: H01L31/0232
4
US10763380B2
Photodetector device with integrated high-contrast grating polarizer
Publication/Patent Number: US10763380B2 Publication Date: 2020-09-01 Application Number: 16/311,470 Filing Date: 2017-06-13 Inventor: Hofrichter, Jens   Enenkel, Jan   Assignee: ams AG   IPC: H01L31/0232 Abstract: The photodetector device comprises a substrate (1) of semiconductor material, a sensor region (2) in the substrate, a plurality of grid elements (4) arranged at a distance (d) from one another above the sensor region, the grid elements having a refractive index, a region of lower refractive index (3), the grid elements being arranged on the region of lower refractive index, and a further region of lower refractive index (5) covering the grid elements.
5
US2020176343A1
RADIATION-HARDENED PACKAGE FOR AN ELECTRONIC DEVICE
Publication/Patent Number: US2020176343A1 Publication Date: 2020-06-04 Application Number: 16/624,484 Filing Date: 2018-06-13 Inventor: Hofrichter, Jens   Meynants, Guy   Pertl, Josef   Troxler, Thomas   Assignee: ams International AG   IPC: H01L23/31 Abstract: The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.
6
US2020124748A1
SEMICONDUCTOR DEVICE FOR INDIRECT DETECTION OF ELECTROMAGNETIC RADIATION AND METHOD OF PRODUCTION
Publication/Patent Number: US2020124748A1 Publication Date: 2020-04-23 Application Number: 16/608,272 Filing Date: 2018-04-19 Inventor: Hofrichter, Jens   Meynants, Guy   Pertl, Josef   Troxler, Thomas   Assignee: ams International AG   IPC: G01T1/20 Abstract: The semiconductor device comprises a substrate of semiconductor material having a main surface, an integrated circuit in the substrate, a photodetector element or array of photodetector elements arranged at or above the main surface, and at least one nanomaterial film arranged above the main surface. At least part of the nanomaterial film has a scintillating property. The method of production includes the use of a solvent to apply the nanomaterial film, in particular by inject printing, by silk-screen printing, by spin coating or by spray coating.
7
WO2020025483A1
FILTER ASSEMBLY, DETECTOR, AND METHOD OF MANUFACTURE OF A FILTER ASSEMBLY
Publication/Patent Number: WO2020025483A1 Publication Date: 2020-02-06 Application Number: 2019070211 Filing Date: 2019-07-26 Inventor: Eilmsteiner, Gerhard   Oppel, Desislava   Hofrichter, Jens   Morecroft, Deborah   Assignee: AMS AG   IPC: G02B5/28 Abstract: A filter assembly comprises an incident medium (10), a spacer (30), at least one dielectric filter (50) and an exit medium (70). The spacer (30) is arranged between the incident medium (10) and the at least one dielectric filter (50) such that the incident medium (10) and the at least one dielectric filter (50) are spaced apart by a working distance (32) and thereby enclose a medium of lower index of refraction than the incident medium (10). The at least one dielectric filter (50) is arranged on the exit medium (70).
8
US10644047B2
Optoelectronic device with a refractive element and a method of producing such an optoelectronic device
Publication/Patent Number: US10644047B2 Publication Date: 2020-05-05 Application Number: 16/069,802 Filing Date: 2016-12-15 Inventor: Hofrichter, Jens   Schrank, Franz   Siegert, Joerg   Assignee: ams AG   IPC: H01L27/146 Abstract: A top surface of a substrate is provided with a detection element for detecting electromagnetic radiation. A refractive element is formed by a portion of a cover element, which is attached to the substrate, so that the refractive element is arranged facing the detection element. The refractive element may be arranged within a recess of the cover element, so that a cavity is formed between the detection element and the refraction element.
9
EP3193368B1
AN OPTOELECTRONIC DEVICE WITH A REFRACTIVE ELEMENT AND A METHOD OF PRODUCING SUCH AN OPTOELECTRONIC DEVICE
Publication/Patent Number: EP3193368B1 Publication Date: 2020-03-18 Application Number: 16151134.0 Filing Date: 2016-01-13 Inventor: Hofrichter, Jens   Schrank, Franz   Siegert, Jörg   Assignee: ams AG   IPC: H01L27/146
10
EP3605042A1
FILTER ASSEMBLY, DETECTOR, AND METHOD OF MANUFACTURE OF A FILTER ASSEMBLY
Publication/Patent Number: EP3605042A1 Publication Date: 2020-02-05 Application Number: 18186348.1 Filing Date: 2018-07-30 Inventor: Eilmsteiner, Gerhard   Oppel, Desislava   Morecroft, Deborah   Hofrichter, Jens   Assignee: ams AG   IPC: G01J1/04 Abstract: A filter assembly comprises an incident medium (10), a spacer (30), at least one dielectric filter (50) and an exit medium (70). The spacer (30) is arranged between the incident medium (10) and the at least one dielectric filter (50) such that the incident medium (10) and the at least one dielectric filter (50) are spaced apart by a working distance (32) and thereby enclose a medium of lower index of refraction than the incident medium (10). The at least one dielectric filter (50) is arranged on the exit medium (70).
11
EP3628990A1
INTEGRATED OPTICAL TRANSDUCER AND METHOD FOR DETECTING DYNAMIC PRESSURE CHANGES
Publication/Patent Number: EP3628990A1 Publication Date: 2020-04-01 Application Number: 18196899.1 Filing Date: 2018-09-26 Inventor: Stojanovic, Goran   Steele, Colin   Hofrichter, Jens   Lazar, Catalin   Kraft, Jochen   Assignee: ams International AG   IPC: G01L9/00 Abstract: An integrated optical transducer (1) for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die (10) having a MEMS diaphragm (11) with a first side (12) exposed to the dynamic pressure changes and a second side (13), and an application-specific integrated circuit, ASIC, die (20) having an optical interferometer assembly. The interferometer assembly comprises a beam splitting element (21) for receiving a source beam (30) from a light source (23) and for splitting the source beam (30) into a probe beam (31) in a first beam path and a reference beam (32) in a second beam path, a beam combining element (22) for combining the probe beam (31) with the reference beam (32) to a superposition beam (33), and a detector (24) configured to generate an electronic interference signal depending on the superposition beam (33). The MEMS die (10) is arranged with respect to the ASIC die (20) such that a gap is formed between the second side (12) of the diaphragm and the ASIC die (20), with the gap defining a cavity (14) and having a gap height. The first beam path of the probe beam (31) comprises coupling into the cavity (14), reflection off of a deflection point or a deflection surface (16) of the diaphragm (11) and coupling out of the cavity (14).
12
US2020168657A1
ASSEMBLY FOR DETECTING ELECTROMAGNETIC RADIATION AND METHOD OF PRODUCING AN ASSEMBLY FOR DETECTING ELECTROMAGNETIC RADIATION
Publication/Patent Number: US2020168657A1 Publication Date: 2020-05-28 Application Number: 16/637,883 Filing Date: 2018-07-26 Inventor: Froehlich, Thomas   Leitner, Michael   Troxler, Thomas   Pertl, Josef   Hollinger, Dominik   Mueller, Thomas   Fitzi, Andreas   Hofrichter, Jens   Assignee: ams International AG   IPC: H01L27/146 Abstract: The assembly comprises a semiconductor device with an active-pixel array, a readout circuit chip or plurality of readout circuit chips mounted outside the active-pixel array, the readout circuit chip or plurality of readout circuit chips being configured to read out voltages or currents provided by the active-pixel array, and electric connections between the active-pixel array and the readout circuit chip or plurality of readout circuit chips.
13
EP3444843B1
ASSEMBLY FOR DETECTING ELECTROMAGNETIC RADIATION AND METHOD OF PRODUCING AN ASSEMBLY FOR DETECTING ELECTROMAGNETIC RADIATION
Publication/Patent Number: EP3444843B1 Publication Date: 2020-12-30 Application Number: 17186179.2 Filing Date: 2017-08-14 Inventor: FrÖhlich, Thomas   Leitner, Michael   Troxler, Thomas   Pertl, Josef   Hollinger, Dominik   MÜller, Thomas   Fitzi, Andreas   Hofrichter, Jens   Assignee: ams International AG   IPC: H01L27/146
14
EP3734652A1
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Publication/Patent Number: EP3734652A1 Publication Date: 2020-11-04 Application Number: 19172269.3 Filing Date: 2019-05-02 Inventor: Hofrichter, Jens Dr.   Kaschowitz, Manuel   Poelzl, Bernhard   Rohracher, Karl Dipl.-ing.   Jouve, Amandine   Balan, Viorel   Crochemore, Romain   Fournel, Frank   Maitrejean, Sylvain   Assignee: ams AG   Commissariat à l'énergie atomique et aux énergies alternatives   IPC: H01L23/00 Abstract: A semiconductor device comprises a substrate body (2) with a surface (3), a conductor (5) comprising a conductor material (5a) covering at least part of the surface (3), and a dielectric (4) that is arranged on a part of the surface (3) that is not covered by the conductor (5). Therein, the conductor (5) is in contact with the substrate body (2), the conductor (5) and the dielectric (4) form a layer (8), and a bonding surface (6) of the layer (8) has surface topographies of less than 10 nm, with the bonding surface (6) facing away from the substrate body (2). Moreover, the semiconductor device (1) is free of a diffusion barrier.
15
WO2019201800A1
PHOTONIC DEVICE, METHOD FOR OPERATING A PHOTONIC DEVICE AND METHOD FOR MANUFACTURING A PHOTONIC DEVICE
Publication/Patent Number: WO2019201800A1 Publication Date: 2019-10-24 Application Number: 2019059535 Filing Date: 2019-04-12 Inventor: Hofrichter, Jens   Assignee: AMS INTERNATIONAL AG   IPC: G01L9/00 Abstract: A photonic device comprises a semiconductor substrate (10) and a pressure-sensitive membrane (20). The pressure-sensitive membrane (20)is arranged in or on the substrate (10). A photonic structure (30) is at least partly coupled to the membrane (20) and arranged to change an optical property depending on a deformation to be induced by a pressure applied to the membrane (20).
16
EP3557211A1
PHOTONIC DEVICE, METHOD FOR OPERATING A PHOTONIC DEVICE AND METHOD FOR MANUFACTURING A PHOTONIC DEVICE
Publication/Patent Number: EP3557211A1 Publication Date: 2019-10-23 Application Number: 18167569.5 Filing Date: 2018-04-16 Inventor: Hofrichter, Jens   Assignee: ams International AG   IPC: G01L9/00 Abstract: A photonic device comprises a semiconductor substrate (10) and a pressure-sensitive membrane (20). The pressure-sensitive membrane (20) is arranged in or on the substrate (10). A photonic structure (30) is at least partly coupled to the membrane (20) and arranged to change an optical property depending on a deformation to be induced by a pressure applied to the membrane (20).
17
US2019237429A1
HYBRID WAFER-TO-WAFER BONDING AND METHODS OF SURFACE PREPARATION FOR WAFERS COMPRISING AN ALUMINUM METALIZATION
Publication/Patent Number: US2019237429A1 Publication Date: 2019-08-01 Application Number: 15/966,206 Filing Date: 2018-04-30 Inventor: Hofrichter, Jens   Assignee: ams International AG   IPC: C23C22/78 Abstract: A surface treatment solution includes a fluoride source; a first solvent; and a water transforming agent to transform water produced during wafer surface treatment into a second solvent, which can be the same as, or different from, the first solvent. The solution can be used, for example, in surface preparation for wafers having a backend including an electrical interconnect that includes aluminum or an aluminum alloy.
18
US2019198686A1
PHOTODETECTOR DEVICE WITH INTEGRATED HIGH-CONTRAST GRATING POLARIZER
Publication/Patent Number: US2019198686A1 Publication Date: 2019-06-27 Application Number: 16/311,470 Filing Date: 2017-06-13 Inventor: Hofrichter, Jens   Enenkel, Jan   Assignee: ams AG   IPC: H01L31/0232 Abstract: The photodetector device comprises a substrate (1) of semiconductor material, a sensor region (2) in the substrate, a plurality of grid elements (4) arranged at a distance (d) from one another above the sensor region, the grid elements having a refractive index, a region of lower refractive index (3), the grid elements being arranged on the region of lower refractive index, and a further region of lower refractive index (5) covering the grid elements.
19
US2019035835A1
AN OPTOELECTRONIC DEVICE WITH A REFRACTIVE ELEMENT AND A METHOD OF PRODUCING SUCH AN OPTOELECTRONIC DEVICE
Publication/Patent Number: US2019035835A1 Publication Date: 2019-01-31 Application Number: 16/069,802 Filing Date: 2016-12-15 Inventor: Hofrichter, Jens   Schrank, Franz   Siegert, Joerg   Assignee: ams AG   IPC: H01L27/146 Abstract: A top surface of a substrate is provided with a detection element for detecting electromagnetic radiation. A refractive element is formed by a portion of a cover element, which is attached to the substrate, so that the refractive element is arranged facing the detection element. The refractive element may be arranged within a recess of the cover element, so that a cavity is formed between the detection element and the refraction element.
20
US2019319156A1
RADIATION-HARD HIGH-SPEED PHOTODIODE DEVICE
Publication/Patent Number: US2019319156A1 Publication Date: 2019-10-17 Application Number: 16/464,806 Filing Date: 2017-11-28 Inventor: Meinhardt, Gerald   Wachmann, Ewald   Sagmeister, Martin   Hofrichter, Jens   Assignee: ams International AG   IPC: H01L31/118 Abstract: The photodiode device comprises a substrate (1) of semiconductor material with a main surface (10), a plurality of doped wells (3) of a first type of conductivity, which are spaced apart at the main surface (10), and a guard ring (7) comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring (7) surrounds an area of the main surface (10) including the plurality of doped wells (3) without dividing this area. Conductor tracks (4) are electrically connected with the doped wells (3), which are thus interconnected, and further conductor tracks (5) are electrically connected with a region of the second type of conductivity. A doped surface region (2) of the second type of conductivity is present at the main surface (10) and covers the entire area between the guard ring (7) and the doped wells (3).
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