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1
US2021028159A1
SYMMETRICAL LAYOUT STRUCTURE OF SEMICONDUCTOR DEVICE
Publication/Patent Number: US2021028159A1 Publication Date: 2021-01-28 Application Number: 16/522,635 Filing Date: 2019-07-25 Inventor: Huang hung yi   Kuo, Tai-haur   Assignee: NATIONAL CHENG KUNG UNIVERSITY   IPC: H01L27/02 Abstract: A symmetrical layout structure of a semiconductor device is formed on a chip. The symmetrical layout structure is performed in a (2M+1)×(2M+1) array and comprises 2M−r working units and r dummy unit(s). Each working unit has 22+M sub-working units continuously connected by a closed trace and arranged along the closed trace in the array, wherein M is a positive integer, and r is zero or a positive integer. Each closed trace forms a parallelogram that is symmetrical to a diagonal path of the array. The working unit can be a current cell. According to the layout structure, all parallelograms have the same centroid, the perimeters of all parallelograms are the same, the lengths of the closed traces are the same, and the distances between all of the sub-current cells are the same. The present invention thus improves the performance of the digital-to-analog converter.
2
US2021058502A1
ELECTRONIC DEVICE
Publication/Patent Number: US2021058502A1 Publication Date: 2021-02-25 Application Number: 16/982,442 Filing Date: 2019-02-23 Inventor: Liao, Yuelong   Huang hung yi   Jin, Qinghao   Yao, Lupeng   Assignee: Huawei Technologies Co., Ltd.   IPC: H04M1/02 Abstract: An electronic device is disclosed. The electronic device includes a foldable display including a first display portion and a second display portion, a shaft disposed between the first display portion and the second display portion, and at least one camera disposed in a sub-area of the first display portion. The first display portion and the second display portion are configured to rotate about the shaft with respect to each other to fold or unfold the foldable display. The sub-area of the first display portion has a thickness greater a thickness of the electronic device when the foldable display is folded.
3
US2021013033A1
Conductive Feature Formation and Structure
Publication/Patent Number: US2021013033A1 Publication Date: 2021-01-14 Application Number: 17/036,734 Filing Date: 2020-09-29 Inventor: Chang, Cheng-wei   Hung, Min-hsiu   Huang hung yi   Wang, Chun Chieh   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/02 Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
4
US2021098295A1
Method and Structure for Barrier-Less Plug
Publication/Patent Number: US2021098295A1 Publication Date: 2021-04-01 Application Number: 16/589,941 Filing Date: 2019-10-01 Inventor: Wang, Sung-li   Huang hung yi   Peng, Yu-yun   Khaderbad, Mrunal A.   Chu, Chia-hung   Liang, Shuen-shin   Lin, Keng-chu   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/768 Abstract: A method includes receiving a structure having a dielectric layer over a conductive feature; etching a hole through the dielectric layer and exposing the conductive feature; depositing a first metal into the hole and in direct contact with the dielectric layer and the conductive feature; depositing a second metal over the first metal; and annealing the structure including the first and the second metals.
5
EP3745688A1
FOLDABLE TERMINAL AND METHOD FOR CONTROLLING ACTIVATION OF SCREEN OF FOLDABLE TERMINAL
Publication/Patent Number: EP3745688A1 Publication Date: 2020-12-02 Application Number: 19915578.9 Filing Date: 2019-11-06 Inventor: Jin, Qinghao   Huang hung yi   Assignee: HUAWEI TECHNOLOGIES CO., LTD.   IPC: H04M1/02 Abstract: This application discloses a foldable terminal and a screen-on control method for the foldable terminal, and pertains to the field of electronic device technologies. The foldable terminal includes a body, a display component, a processor, and a covering detection sensor. The body includes a first body part and a second body part that are connected in a foldable connection manner, the display component includes two display parts, and the two display parts are fastened on the different body parts. The covering detection sensor is disposed on the first body part. The covering detection sensor is configured to detect whether the first body part is covered with a terminal protective case. The processor is configured to: when the body is in a folded state, if the covering detection sensor detects that the first body part is not covered with the terminal protective case, control a to-be-used display part to be completely or partially on. According to this application, a technical problem in the related art that a process of operating a foldable terminal is complex and inefficient can be effectively resolved.
6
US2020379511A1
Foldable Terminal and Screen-On Control Method for Foldable Terminal
Publication/Patent Number: US2020379511A1 Publication Date: 2020-12-03 Application Number: 16/996,997 Filing Date: 2020-08-19 Inventor: Jin, Qinghao   Huang hung yi   Assignee: Huawei Technologies Co., Ltd.   IPC: G06F1/16 Abstract: This application discloses a foldable terminal and a screen-on control method for the foldable terminal, and pertains to the field of electronic device technologies. The foldable terminal includes a body, a display component, a processor, and a covering detection sensor. The body includes a first body part and a second body part that are connected in a foldable connection manner, the display component includes two display parts. The covering detection sensor is configured to detect whether the first body part is covered with a terminal protective case. The processor is configured to: if the covering detection sensor detects that the first body part is not covered with the terminal protective case, control a to-be-used display part to be completely or partially on. According to this application, a technical problem in the related art that a process of operating a foldable terminal is complex and inefficient can be effectively resolved.
7
US10804097B2
Conductive feature formation and structure
Publication/Patent Number: US10804097B2 Publication Date: 2020-10-13 Application Number: 16/568,720 Filing Date: 2019-09-12 Inventor: Chang, Cheng-wei   Hung, Min-hsiu   Huang hung yi   Wang, Chun Chieh   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/02 Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
8
US2020176260A1
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
Publication/Patent Number: US2020176260A1 Publication Date: 2020-06-04 Application Number: 16/265,747 Filing Date: 2019-02-01 Inventor: Hung, Min-hsiu   Chang, Chien   Chao, Yi-hsiang   Huang hung yi   Chang, Chih-wei   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L21/285 Abstract: A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.
9
US10727117B2
Method for manufacturing semiconductor structure
Publication/Patent Number: US10727117B2 Publication Date: 2020-07-28 Application Number: 16/130,690 Filing Date: 2018-09-13 Inventor: Liao, Yu-hsiang   Li, Ya-huei   Chu, Li-wei   Nieh, Chun-wen   Huang hung yi   Chang, Chih-wei   Su, Ching-hwanq   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.   IPC: H01L21/768 Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.
10
US2020357691A1
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Publication/Patent Number: US2020357691A1 Publication Date: 2020-11-12 Application Number: 16/940,246 Filing Date: 2020-07-27 Inventor: Liao, Yu-hsiang   Li, Ya-huei   Chu, Li-wei   Nieh, Chun-wen   Huang hung yi   Chang, Chih-wei   Su, Ching-hwanq   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.   IPC: H01L21/768 Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed.
11
US202020583A1
FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH METAL-SEMICONDUCTOR COMPOUND REGION
Publication/Patent Number: US202020583A1 Publication Date: 2020-01-16 Application Number: 20/181,603 Filing Date: 2018-07-13 Inventor: Chang, Chih-wei   Tsai, Ming-hsing   Su, Ching-hwanq   Chu, Li-wei   Chao, Yi-hsiang   Hung, Min-hsiu   Li, Ya-huei   Liao, Yu-hsiang   Huang hung yi   Yeh, Kuan-yu   Lin, Kan-ju   Chuang, Chi-hung   Nieh, Chun-wen   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L29/78 Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.
12
US2020020583A1
FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH METAL-SEMICONDUCTOR COMPOUND REGION
Publication/Patent Number: US2020020583A1 Publication Date: 2020-01-16 Application Number: 16/034,843 Filing Date: 2018-07-13 Inventor: Chao, Yi-hsiang   Hung, Min-hsiu   Nieh, Chun-wen   Li, Ya-huei   Liao, Yu-hsiang   Chu, Li-wei   Lin, Kan-ju   Yeh, Kuan-yu   Chuang, Chi-hung   Chang, Chih-wei   Su, Ching-hwanq   Huang hung yi   Tsai, Ming-hsing   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/768 Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.
13
US10267271B2
Temperature-controllable engine fuel supply device
Publication/Patent Number: US10267271B2 Publication Date: 2019-04-23 Application Number: 15/635,195 Filing Date: 2017-06-28 Inventor: Huang hung yi   Assignee: Huang hung yi   IPC: F02M31/20 Abstract: A temperature-controllable engine fuel supply device is used to feed fuel into a fuel inlet (40) of an engine (40). The temperature-controllable engine fuel supply device includes a fuel tank (1) for receiving the fuel, a cooling unit (2) and a nozzle (3). The cooling unit (2) communicates with the fuel tank (1) to cool the fuel. The nozzle (3) is disposed corresponding to the fuel inlet (40) to jet the fuel toward the fuel inlet (40). A cooling path (P) through which the fuel passes is from the cooling unit (2), through the nozzle (3), to the fuel inlet (40). A temperature sensor (21), (23) is installed on the cooling path (P) to detect temperature of the fuel, so temperature of the fuel is controlled to be within an ideal range before the fuel enters the engine (4).
14
US2019020258A1
ROTARY OBJECT DRIVING AND POWER GENERATING SYSTEM
Publication/Patent Number: US2019020258A1 Publication Date: 2019-01-17 Application Number: 15/648,461 Filing Date: 2017-07-13 Inventor: Huang, Jhao-tang   Huang, Hung Yi   Assignee: HUANG, JHAO-TANG   HUANG, HUNG YI   IPC: H02K47/00 Abstract: A rotary object driving and power generating system has a motor for driving a transversal rod, and then the transversal rod drives supporting rods which further drive the eccentric rotation device. The eccentric rotation device further drives a lower shaft so as to drive the power generator to generate electric power. Therefore power not used in the eccentric rotation device may be saved to drive the power generator to generate electric power and the electric power can be fed back to drive the eccentric rotation device so as to achieve the object of power saving.
15
US201920258A1
ROTARY OBJECT DRIVING AND POWER GENERATING SYSTEM
Publication/Patent Number: US201920258A1 Publication Date: 2019-01-17 Application Number: 20/171,564 Filing Date: 2017-07-13 Inventor: Huang, Jhao-tang   Huang, Hung Yi   Assignee: HUANG, JHAO-TANG   HUANG, HUNG YI   IPC: H02K47/00 Abstract: A rotary object driving and power generating system has a motor for driving a transversal rod, and then the transversal rod drives supporting rods which further drive the eccentric rotation device. The eccentric rotation device further drives a lower shaft so as to drive the power generator to generate electric power. Therefore power not used in the eccentric rotation device may be saved to drive the power generator to generate electric power and the electric power can be fed back to drive the eccentric rotation device so as to achieve the object of power saving.
16
US2019273024A1
CONTACT PLUG AND METHOD OF FORMATION
Publication/Patent Number: US2019273024A1 Publication Date: 2019-09-05 Application Number: 15/909,682 Filing Date: 2018-03-01 Inventor: Li, Ya-huei   Chu, Li-wei   Liao, Yu-hsiang   Huang hung yi   Chang, Chih-wei   Su, Ching-hwanq   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.   IPC: H01L21/768 Abstract: A method of making a semiconductor device that includes forming a dielectric stack over a substrate and patterning a contact region in the dielectric stack, the contact region having side portions and a bottom portion that exposes the substrate. The method also includes forming a dielectric barrier layer in the contact region to cover the side portions and forming a conductive blocking layer to cover the dielectric barrier layer, the dielectric stack, and the bottom portion of the contact region. The method can include forming a conductive layer over the conductive blocking layer and forming a conductive barrier layer over the conductive layer. The method can further include forming a silicide region in the substrate beneath the conductive layer.
17
TW201923977A
Method for manufacturing semiconductor structure
Publication/Patent Number: TW201923977A Publication Date: 2019-06-16 Application Number: 107141115 Filing Date: 2018-11-19 Inventor: Chang, Chih-wei   Huang hung yi   Li, Ya-huei   Liao, Yu-hsiang   Chu, Li-wei   Su, Ching-hwanq   Nieh, Chun-wen   Assignee: Taiwan Semiconductor Manufacturing Company Ltd.   IPC: H01L21/768 Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.
18
US2019157141A1
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Publication/Patent Number: US2019157141A1 Publication Date: 2019-05-23 Application Number: 16/130,690 Filing Date: 2018-09-13 Inventor: Liao, Yu-hsiang   Li, Ya-huei   Chu, Li-wei   Nieh, Chun-wen   Huang hung yi   Chang, Chih-wei   Su, Ching-hwanq   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.   IPC: H01L21/768 Abstract: A method for manufacturing a semiconductor structure includes following operations. A sacrificial layer is formed over the conductive layer, wherein the sacrificial layer includes a first sacrificial portion over the first conductive portion, and a second sacrificial portion over the second conductive portion, and a first thickness of the first sacrificial portion is larger than a second thickness of the second sacrificial portion. The first sacrificial portion and the second sacrificial portion of the sacrificial layer, and the second conductive portion of the conductive layer are removed, with at least a portion of the first conductive portion remaining over the bottom of the trench.
19
US201838323A1
TEMPERATURE-CONTROLLABLE ENGINE FUEL SUPPLY DEVICE
Publication/Patent Number: US201838323A1 Publication Date: 2018-02-08 Application Number: 20/171,563 Filing Date: 2017-06-28 Inventor: Huang, Hung Yi   Assignee: Huang hung yi   IPC: F02M53/04 Abstract: A temperature-controllable engine fuel supply device is used to feed fuel into a fuel inlet (40) of an engine (40). The temperature-controllable engine fuel supply device includes a fuel tank (1) for receiving the fuel, a cooling unit (2) and a nozzle (3). The cooling unit (2) communicates with the fuel tank (1) to cool the fuel. The nozzle (3) is disposed corresponding to the fuel inlet (40) to jet the fuel toward the fuel inlet (40). A cooling path (P) through which the fuel passes is from the cooling unit (2), through the nozzle (3), to the fuel inlet (40). A temperature sensor (21), (23) is installed on the cooling path (P) to detect temperature of the fuel, so temperature of the fuel is controlled to be within an ideal range before the fuel enters the engine (4).
20
US2018038323A1
TEMPERATURE-CONTROLLABLE ENGINE FUEL SUPPLY DEVICE
Publication/Patent Number: US2018038323A1 Publication Date: 2018-02-08 Application Number: 15/635,195 Filing Date: 2017-06-28 Inventor: Huang hung yi   Assignee: Huang hung yi   IPC: F02M53/04 Abstract: A temperature-controllable engine fuel supply device is used to feed fuel into a fuel inlet (40) of an engine (40). The temperature-controllable engine fuel supply device includes a fuel tank (1) for receiving the fuel, a cooling unit (2) and a nozzle (3). The cooling unit (2) communicates with the fuel tank (1) to cool the fuel. The nozzle (3) is disposed corresponding to the fuel inlet (40) to jet the fuel toward the fuel inlet (40). A cooling path (P) through which the fuel passes is from the cooling unit (2), through the nozzle (3), to the fuel inlet (40). A temperature sensor (21), (23) is installed on the cooling path (P) to detect temperature of the fuel, so temperature of the fuel is controlled to be within an ideal range before the fuel enters the engine (4).
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