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1
US2020185443A1
SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: US2020185443A1 Publication Date: 2020-06-11 Application Number: 16/336,009 Filing Date: 2017-09-28 Inventor: Itabasi, Kouichi   Nishimura, Yuuji   Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
2
US10847561B2
Solid-state imaging element and method for manufacturing the same, and electronic device
Publication/Patent Number: US10847561B2 Publication Date: 2020-11-24 Application Number: 16/336,009 Filing Date: 2017-09-28 Inventor: Itabasi, Kouichi   Nishimura, Yuuji   Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
3
WO2018070259A1
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: WO2018070259A1 Publication Date: 2018-04-19 Application Number: 2017035190 Filing Date: 2017-09-28 Inventor: Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Itabasi, Kouichi   Nishimura, Yuuji   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: The present technology relates to a solid-state imaging element, a method for manufacturing same, and an electronic device, wherein the solid-state imaging element can suppress the occurrence of flares, ghosts, or color mixing, as well as the occurrence of stains caused by moisture. The solid-state imaging element has, on the surface of a microlens, a pixel in which a single-layered anti-reflective film is formed, and a pixel in which a double-layered anti-reflective film is formed. The present technology can be applied, for example, to a backside illumination-type solid-state imaging element.
4
US10008529B2
Solid-state imaging device, method of manufacturing the same, and electronic apparatus
Publication/Patent Number: US10008529B2 Publication Date: 2018-06-26 Application Number: 15/512,131 Filing Date: 2015-09-17 Inventor: Nishi, Takafumi   Ootsuka, Yoichi   Shimoji, Masaya   Seki, Yuichi   Jinwaki, Toyomi   Ishikawa, Mitsuru   Takita, Yosuke   Chiba, Ryou   Itabasi, Kouichi   Nishimura, Yuuji   Kitano, Yoshiaki   Nakashikiryo, Takashi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
5
US2017278889A1
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2017278889A1 Publication Date: 2017-09-28 Application Number: 15/512,131 Filing Date: 2015-09-17 Inventor: Nakashikiryo, Takashi   Kitano, Yoshiaki   Nishimura, Yuuji   Itabasi, Kouichi   Chiba, Ryou   Takita, Yosuke   Ishikawa, Mitsuru   Jinwaki, Toyomi   Seki, Yuichi   Shimoji, Masaya   Ootsuka, Yoichi   Nishi, Takafumi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
6
WO2016052220A1
SOLID-STATE IMAGING ELEMENT
Publication/Patent Number: WO2016052220A1 Publication Date: 2016-04-07 Application Number: 2015076414 Filing Date: 2015-09-17 Inventor: Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Kitano, Yoshiaki   Ootsuka, Yoichi   Nakashikiryo, Takashi   Jinwaki, Toyomi   Nishi, Takafumi   Itabasi, Kouichi   Takita, Yosuke   Chiba, Ryou   Nishimura, Yuuji   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: The present disclosure pertains to a solid-state imaging element