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1 | US2020185443A1 |
SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
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Publication/Patent Number: US2020185443A1 | Publication Date: 2020-06-11 | Application Number: 16/336,009 | Filing Date: 2017-09-28 | Inventor： Itabasi, Kouichi Nishimura, Yuuji Ishikawa, Mitsuru Seki, Yuichi Shimoji, Masaya | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element. | |||
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2 | US10847561B2 |
Solid-state imaging element and method for manufacturing the same, and electronic device
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Publication/Patent Number: US10847561B2 | Publication Date: 2020-11-24 | Application Number: 16/336,009 | Filing Date: 2017-09-28 | Inventor： Itabasi, Kouichi Nishimura, Yuuji Ishikawa, Mitsuru Seki, Yuichi Shimoji, Masaya | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element. | |||
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3 | WO2018070259A1 |
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
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Publication/Patent Number: WO2018070259A1 | Publication Date: 2018-04-19 | Application Number: 2017035190 | Filing Date: 2017-09-28 | Inventor： Ishikawa, Mitsuru Seki, Yuichi Shimoji, Masaya Itabasi, Kouichi Nishimura, Yuuji | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/369 | Abstract: The present technology relates to a solid-state imaging element, a method for manufacturing same, and an electronic device, wherein the solid-state imaging element can suppress the occurrence of flares, ghosts, or color mixing, as well as the occurrence of stains caused by moisture. The solid-state imaging element has, on the surface of a microlens, a pixel in which a single-layered anti-reflective film is formed, and a pixel in which a double-layered anti-reflective film is formed. The present technology can be applied, for example, to a backside illumination-type solid-state imaging element. | |||
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4 | US10008529B2 |
Solid-state imaging device, method of manufacturing the same, and electronic apparatus
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Publication/Patent Number: US10008529B2 | Publication Date: 2018-06-26 | Application Number: 15/512,131 | Filing Date: 2015-09-17 | Inventor： Nishi, Takafumi Ootsuka, Yoichi Shimoji, Masaya Seki, Yuichi Jinwaki, Toyomi Ishikawa, Mitsuru Takita, Yosuke Chiba, Ryou Itabasi, Kouichi Nishimura, Yuuji Kitano, Yoshiaki Nakashikiryo, Takashi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example. | |||
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5 | US2017278889A1 |
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2017278889A1 | Publication Date: 2017-09-28 | Application Number: 15/512,131 | Filing Date: 2015-09-17 | Inventor： Nakashikiryo, Takashi Kitano, Yoshiaki Nishimura, Yuuji Itabasi, Kouichi Chiba, Ryou Takita, Yosuke Ishikawa, Mitsuru Jinwaki, Toyomi Seki, Yuichi Shimoji, Masaya Ootsuka, Yoichi Nishi, Takafumi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example. | |||
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6 | WO2016052220A1 |
SOLID-STATE IMAGING ELEMENT
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Publication/Patent Number: WO2016052220A1 | Publication Date: 2016-04-07 | Application Number: 2015076414 | Filing Date: 2015-09-17 | Inventor： Ishikawa, Mitsuru Seki, Yuichi Shimoji, Masaya Kitano, Yoshiaki Ootsuka, Yoichi Nakashikiryo, Takashi Jinwaki, Toyomi Nishi, Takafumi Itabasi, Kouichi Takita, Yosuke Chiba, Ryou Nishimura, Yuuji | Assignee: Sony Corporation | IPC: H01L27/14 | Abstract: The present disclosure pertains to a solid-state imaging element |
3.Current Quota