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1
US2021091135A1
IMAGE SENSOR, IMAGE SENSOR MANUFACTURING METHOD, ELECTRONIC DEVICE, AND IMAGING MODULE
Publication/Patent Number: US2021091135A1 Publication Date: 2021-03-25 Application Number: 16/611,973 Filing Date: 2018-05-01 Inventor: Yokogawa, Sozo   Murakami, Hirotaka   Ito, Mikinori   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or N front-side-illuminated CMOS image sensor.
2
WO2020012984A1
SENSOR DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: WO2020012984A1 Publication Date: 2020-01-16 Application Number: 2019025805 Filing Date: 2019-06-28 Inventor: Oshiyama, Itaru   Ito, Mikinori   Yokogawa, Sozo   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a sensor device and an electronic apparatus with which it is possible to achieve an increase in sensor sensitivity. A photoelectric conversion device for receiving light of a predetermined wavelength region and performing photoelectric conversion is formed in a semiconductor layer. A reflection suppressing portion for suppressing reflection of light is provided on a light-receiving surface which is the side on which light enters the semiconductor layer, and a transmission suppressing portion for suppressing transmission of the light that has entered via the light-receiving surface through the semiconductor layer is provided on a circuit surface which is the opposite side to the semiconductor layer with respect to the light-receiving surface. The present technique can be applied to a back-illuminated CMOS image sensor, for example.
3
KR20190067179A
촬상 소자 및 전자기기
Publication/Patent Number: KR20190067179A Publication Date: 2019-06-14 Application Number: 20197010930 Filing Date: 2017-10-13 Inventor: Oshiyama, Itaru   Yokogawa, Sozo   Ito, Mikinori   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: 본 기술은, 이면 조사형의 촬상 소자에 있어서, 적외광에 대한 감도를 향상시킬 수 있도록 하는 촬상 소자 및 전자기기에 관한 것이다. 촬상 소자는, 광전 변환부가 형성되어 있는 반도체 기판과, 상기 반도체 기판의 수광면과 반대 측에 배치되고, 배선 및 반사막을 구비하는 배선층과, 상기 반도체 기판과 상기 배선층 사이에 적층되어 있는 절연막을 구비하고, 상기 반사막은, 상기 절연막과 상기 배선 사이에 배치되며, 상기 반도체 기판과 상기 배선층이 적층되는 방향인 제1 방향에 있어서, 각 화소의 상기 광전 변환부의 적어도 일부와 겹치고, 상기 절연막과 상기 반사막 사이의 제1 층간막이, 상기 절연막보다 두껍다. 본 기술은, 예를 들면, 이면 조사형의 CMOS 이미지 센서에 적용할 수 있다.
4
US2019244992A1
IMAGING ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: US2019244992A1 Publication Date: 2019-08-08 Application Number: 16/341,974 Filing Date: 2017-10-13 Inventor: Oshiyama, Itaru   Ito, Mikinori   Yokogawa, Sozo   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/374 Abstract: The present technology relates to an imaging element and an electronic device capable of improving sensitivity to infrared light in a back side irradiation imaging element. An imaging element is provided with a semiconductor substrate on which a photoelectric converting unit is formed, a wiring layer arranged on a side opposite to a light receiving surface of the semiconductor substrate, and provided with a wire and a reflective film, and an insulating film stacked between the semiconductor substrate and the wiring layer, in which the reflective film is arranged between the insulating film and the wire and overlaps with at least a part of the photoelectric converting unit of each pixel in a first direction in which the semiconductor substrate and the wiring layer are stacked, and a first interlayer film between the insulating film and the reflective film is thicker than the insulating film. The present technology is applicable to a back side irradiation CMOS image sensor, for example.
5
TW201908776A
Image sensor, image sensor manufacturing method, electronic device, and imaging module
Publication/Patent Number: TW201908776A Publication Date: 2019-03-01 Application Number: 107113454 Filing Date: 2018-04-20 Inventor: Ito, Mikinori   Yokogawa, Sozo   Murakami, Hirotaka   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.
6
WO2019124562A1
SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
Publication/Patent Number: WO2019124562A1 Publication Date: 2019-06-27 Application Number: 2018047397 Filing Date: 2018-12-21 Inventor: Tanaka, Takashi   Ootani, Natsuko   Okano, Tomomi   Ito, Mikinori   Arai, Tomoyuki   Kitabayashi, Yuya   Nakamoto, Yuta   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The solid-state imaging device according to an embodiment of the present invention comprises: a semiconductor substrate that is provided with a photoelectric conversion element; a lens that is disposed above a first light incident surface of the photoelectric conversion element; and a plurality of columnar structures that are disposed on a surface parallel to the first light incident surface so as to be positioned in the space from a second light incident surface of the lens up to the first light incident surface of the photoelectric conversion element, wherein the columnar structures contain at least one from among the following: silicon, germanium, gallium phosphide, aluminum oxide, cerium oxide, hafnium oxide, indium oxide, tin oxide, niobium pentoxide, magnesium oxide, tantalum pentoxide, titanium pentoxide, titanium oxide, tungsten oxide, yttrium oxide, zinc oxide, zirconia, cerium fluoride, gadolinium fluoride, lanthanum fluoride, and neodymium fluoride.
7
JP2018195908A
IMAGE ELEMENT, IMAGE ELEMENT MANUFACTURING METHOD, ELECTRONIC APPARATUS, AND IMAGING MODULE
Publication/Patent Number: JP2018195908A Publication Date: 2018-12-06 Application Number: 2017096403 Filing Date: 2017-05-15 Inventor: Murakami, Hirotaka   Yokokawa, Sozo   Ito, Mikinori   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORP   IPC: G02B5/18 Abstract: To downsize an image element including a structural color filter that uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane such as GMR filters, or a device comprising the image element.SOLUTION: An image element includes: a structural color filter that uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane; and a reflector that reflects electromagnetic waves between adjacent ones of the structural color filters. The present techniques are applicable, e.g., to an image sensor provided with GMR filters, such as a back-side or front-side illuminated CMOS image sensor.SELECTED DRAWING: Figure 7
8
JP2018023942A
WATER PURIFICATION CARTRIDGE PRETREATMENT METHOD AND PURIFYING METHOD
Publication/Patent Number: JP2018023942A Publication Date: 2018-02-15 Application Number: 2016158152 Filing Date: 2016-08-10 Inventor: Terui, Hideyuki   Takeda, Hatsumi   Ito, Mikinori   Assignee: MITSUBISHI CHEM CLEANSUI CORP   IPC: C02F1/28 Abstract: PROBLEM TO BE SOLVED: To provide a water purification cartridge pretreatment method that makes water permeate a filter medium before use to purge excess air.SOLUTION: A pretreatment method has a first shaking step to immerse at least part of a water purification cartridge 100 in water for shaking, and a second shaking step to shake the water purification cartridge in a direction different from that in the first shaking step. The first shaking step and the second shaking step are repeated one or more times.SELECTED DRAWING: Figure 2
9
JP2018023941A
WATER PURIFICATION CARTRIDGE
Publication/Patent Number: JP2018023941A Publication Date: 2018-02-15 Application Number: 2016158147 Filing Date: 2016-08-10 Inventor: Terui, Hideyuki   Takeda, Hatsumi   Ito, Mikinori   Assignee: MITSUBISHI CHEM CLEANSUI CORP   IPC: C02F1/28 Abstract: PROBLEM TO BE SOLVED: To achieve a water purification cartridge that suitably purifies water.SOLUTION: When a water purification cartridge 100 is set so that a channel of water introduced from a water introduction port 112 turns in a vertical direction, a face having the water introduction port 112 thereon is an inclined face inclined horizontally, and the air reservoir part 117 is outside the water introduction port 112 and at a position higher than the inclined face.SELECTED DRAWING: Figure 3
10
WO2018079296A1
IMAGING ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: WO2018079296A1 Publication Date: 2018-05-03 Application Number: 2017037119 Filing Date: 2017-10-13 Inventor: Oshiyama, Itaru   Yokogawa, Sozo   Ito, Mikinori   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: The present technique relates to: a backside-illuminated imaging element which is able to have improved sensitivity with respect to infrared light; and an electronic device. An imaging element according to the present invention is provided with: a semiconductor substrate which is provided with a photoelectric conversion part; a wiring layer which is arranged on a surface of the semiconductor substrate, said surface being on the reverse side of the light-receiving surface, and which comprises a wiring line and a reflective film; and an insulating film which is laminated between the semiconductor substrate and the wiring layer. The reflective film is arranged between the insulating film and the wiring line, and overlaps at least a part of the photoelectric conversion part of each pixel in a first direction that is the lamination direction of the semiconductor substrate and the wiring layer; and a first interlayer film between the insulating film and the reflective film is thicker than the insulating film. The present technique is applicable, for example, to a backside-illuminated CMOS image sensor.
11
JP5927945B2
PORTABLE SIMPLIFIED WATER PURIFIER
Publication/Patent Number: JP5927945B2 Publication Date: 2016-06-01 Application Number: 2012019703 Filing Date: 2012-02-01 Inventor: Taneike, Masahiko   Takeda, Hatsubi   Ito, Mikinori   Assignee: MITSUBISHI RAYON CLEANSUI CO LTD   IPC: C02F1/28 Abstract: PROBLEM TO BE SOLVED: To provide a cup-type portable simplified water purifier equipped with a simple purifying structure in low cost
12
JP2016010800A
WATER PURIFICATION CARTRIDGE AND WATER PURIFIER
Publication/Patent Number: JP2016010800A Publication Date: 2016-01-21 Application Number: 2015181266 Filing Date: 2015-09-14 Inventor: Ishikawa, Takeshi   Kimura, Shozo   Takeda, Hatsumi   Sanai, Katsuya   Minagawa, Masakazu   Ito, Mikinori   Doi, Tsuyoshi   Assignee: MITSUBISHI RAYON CO LTD   IPC: C02F1/28 Abstract: PROBLEM TO BE SOLVED: To provide a water purification cartridge and a water purifier which have a simple configuration owing to unnecessity of a vent path and reduce member costs by reducing resin materials.SOLUTION: A water purification cartridge is arranged removably in a water purifier and includes a plurality of single cartridges provided with a bottomed cylindrical case body and one or more ceiling wall parts closing the upper-end openings of the single cartridges. The inside of the single cartridges serve as a housing part for a filter medium
13
JP2015217315A
WATER PURIFICATION CARTRIDGE
Publication/Patent Number: JP2015217315A Publication Date: 2015-12-07 Application Number: 2014100348 Filing Date: 2014-05-14 Inventor: Takeda, Hatsumi   Ito, Mikinori   Assignee: MITSUBISHI RAYON CO LTD   IPC: C02F1/28 Abstract: PROBLEM TO BE SOLVED: To provide a water purification cartridge in which a purifying agent can be used efficiently and the purification capacity of which is improved to obtain excellent purification performance.SOLUTION: A water purification cartridge 3 is fit to an electrical pot 1 including: a bottomed cylindrical container body 10 having a pouring port 14; and a lid body 2 to be attached detachably to an upper end opening of the bottomed cylindrical container body 10. The water purification cartridge 3 includes: a raw water storage part 31; a bottom part housing area 32A for surrounding the bottom part 31B of the raw water storage part 31; a side part housing area 32B for surrounding the side surface part 31A of the raw water storage part 31; a purifying agent housing part 32 in which the purifying agent is housed; a first inflow port 33 which is arranged on the bottom part 31B of the raw water storage part 31
14
JP2015213551A
POT AND ELECTRIC POT
Publication/Patent Number: JP2015213551A Publication Date: 2015-12-03 Application Number: 2014096580 Filing Date: 2014-05-08 Inventor: Takeda, Hatsumi   Ito, Mikinori   Assignee: MITSUBISHI RAYON CO LTD   IPC: A47J27/21 Abstract: PROBLEM TO BE SOLVED: To inhibit water from dropping into a raw water storage part by improving a draining property of the inside of a lid body after pouring and preventing accumulation in the lid body.SOLUTION: An electric pot 1 includes a bottomed cylindrical container body 10 having a pourer 14; and a lid body 2 detachably attached to an upper end opening of the container body 1 and having a water discharge path 21 communicated to the pourer 14. A lower face 41a of a lower lid body 40 includes a plurality of water passing holes 44 connected to the water discharge path 21
15
JP2015167635A
POT
Publication/Patent Number: JP2015167635A Publication Date: 2015-09-28 Application Number: 2014043001 Filing Date: 2014-03-05 Inventor: Terui, Hideyuki   Kimura, Shozo   Takeda, Hatsumi   Ito, Mikinori   Assignee: MITSUBISHI RAYON CO LTD   IPC: A47J27/21 Abstract: PROBLEM TO BE SOLVED: To provide excellent purification performance by improving purification treatment capability.SOLUTION: An electric pot 1 is provided with: a bottomed cylindrical container body 10 having a pouring port 14; and a lid body 2 which is removably fitted to an upper end opening of the container body 10 and has an outgoing water path 21 communicating with the pouring port 14. On a lower surface 41a of a lower lid body 40
16
JP2014188433A
PORTABLE SIMPLE WATER PURIFIER
Publication/Patent Number: JP2014188433A Publication Date: 2014-10-06 Application Number: 2013065953 Filing Date: 2013-03-27 Inventor: Takeda, Hatsumi   Ito, Mikinori   Assignee: MITSUBISHI RAYON CO LTD   IPC: C02F1/28 Abstract: PROBLEM TO BE SOLVED: To provide a cup-type portable simple water purifier at a low cost
17
JP2013158659A
PORTABLE SIMPLIFIED WATER PURIFIER
Publication/Patent Number: JP2013158659A Publication Date: 2013-08-19 Application Number: 2012019703 Filing Date: 2012-02-01 Inventor: Taneike, Masahiko   Takeda, Hatsubi   Ito, Mikinori   Assignee: MITSUBISHI RAYON CLEANSUI CO LTD   IPC: C02F1/28 Abstract: PROBLEM TO BE SOLVED: To provide a cup-type portable simplified water purifier equipped with a simple purifying structure in low cost
18
JP5228188B2
MULTILAYER STRUCTURE ON SEMICONDUCTOR SUBSTRATE
Publication/Patent Number: JP5228188B2 Publication Date: 2013-07-03 Application Number: 2007066393 Filing Date: 2007-03-15 Inventor: Ishida, Makoto   Sawada, Kazuaki   Akai, Daisuke   Ito, Mikinori   Odonari, Tatsuhito   Kikuchi, Kenro   Assignee: TOYOHASHI UNIV OF TECHNOLOGY   IPC: H01L21/336 Abstract: PROBLEM TO BE SOLVED: To provide a ferroelectric element excellent in characteristics by using a γ-Al2O3single crystal film as a buffer layer on a silicon substrate. SOLUTION: The γ-Al2O3single crystal film 6 is formed on the lowermost silicon substrate 4 of an MFMIS-structure thin film 2. An LaNiO3film 8 as an oxide conductor is formed as a lower electrode immediately above the γ-Al2O3single crystal film 6. A PZT thin film 10 as a ferroelectric material is formed immediately above the LaNiO3film 8. A Pt layer 12 as an upper electrode is formed on the upper surface of the PZT thin film 10. COPYRIGHT: (C)2008
19
JP2013197333A
SOLID-STATE IMAGING DEVICE
Publication/Patent Number: JP2013197333A Publication Date: 2013-09-30 Application Number: 2012063299 Filing Date: 2012-03-21 Inventor: Yamaguchi, Yuichi   Iwamoto, Shinji   Yamagishi, Katsumi   Kawamoto, Takeyoshi   Ito, Mikinori   Kurose, Tomonori   Assignee: SONY CORP   IPC: H01L27/148 Abstract: PROBLEM TO BE SOLVED: To provide a solid-state imaging device in which conversion efficiency of an FD amplifier can be enhanced by a simple structure.SOLUTION: A solid-state imaging device 1-1 includes a horizontal output gate HOG provided on a semiconductor substrate 3 in order to read the signal charge of a photoelectric conversion unit
20
US2010096666A1
LAMINAR STRUCTURE ON A SEMICONDUCTOR SUBSTRATE
Publication/Patent Number: US2010096666A1 Publication Date: 2010-04-22 Application Number: 12/450,182 Filing Date: 2007-12-12 Inventor: Ishida, Makoto   Sawada, Kazuaki   Akai, Daisuke   Ito, Mikinori   Otonari, Mikito   Kikuchi, Kenro   Guo, Yiping   Assignee: National University Corporation Toyohashi University of Technology   IPC: H01L23/14 Abstract: An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of γ-Al2O3 formed as a buffer layer on a silicon substrate. The monocrystalline γ-Al2O3 film 6 is formed on the silicon substrate 4 which is the lowermost layer of an MFMIS structure 2. On the monocrystalline γ-Al2O3 film 6, there is formed an electrically conductive oxide in the form of a LaNiO3 film 8 as a lower electrode. On the LaNiO3 film 8, there is formed a PZT thin film 10 which is a ferroelectric material. ON the PZT thin film 10, there is formed a Pt film as an upper electrode.
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