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1
US2021040386A1
SEMICONDUCTOR NANOCRYSTAL PARTICLE AND PRODUCTION METHODS THEREOF
Publication/Patent Number: US2021040386A1 Publication Date: 2021-02-11 Application Number: 16/986,384 Filing Date: 2020-08-06 Inventor: Min, Jihyun   Jang, Eun Joo   Sargent, Edward H.   Jang, Hyo Sook   Saidaminov, Makhsud I.   Hoogland, Sjoerd   Jain, Ankit   Johnston, Andrew   Voznyy, Oleksandr   Assignee: SAMSUNG ELECTRONICS CO., LTD.   The Governing Council of the University of Toronto   IPC: C09K11/75 Abstract: A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ).   Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x≤3, −1<α<1, 3+α−x>0, −1<β<1, and −1<γ<1.
2
US10717649B2
Processes for synthesizing nanocrystals
Publication/Patent Number: US10717649B2 Publication Date: 2020-07-21 Application Number: 16/117,394 Filing Date: 2018-08-30 Inventor: Jang, Hyo Sook   Jun, Shin Ae   Jang, Eun Joo   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/00 Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy  [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.
3
US2020216755A1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020216755A1 Publication Date: 2020-07-09 Application Number: 16/817,902 Filing Date: 2020-03-13 Inventor: Jang, Hyo Sook   Won, Yuho   Hwang, Sungwoo   Kim, Ji Yeong   Jang, Eun Joo   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/08 Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.
4
US2020411784A1
DISPLAY DEVICE
Publication/Patent Number: US2020411784A1 Publication Date: 2020-12-31 Application Number: 16/910,369 Filing Date: 2020-06-24 Inventor: Jang, Hyo Sook   Kim, Tae Hyung   Jang, Eun Joo   Cho, Oul   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L51/50 Abstract: A display device including a light source; and a quantum dot emission layer disposed on the light source, wherein the quantum dot emission layer includes a first emission layer disposed in a red pixel of the display device, and a second emission layer disposed in a green pixel of the display device, the light source includes a first portion configured to supply a first incident light to the first emission layer, a second portion configured to supply a second incident light to the second emission layer, and a third portion configured to supply a third light to a blue pixel of the display device, the first emission layer includes red light emitting quantum dots and the second emission layer includes green light emitting quantum dots, and each of the first portion, the second portion, and the third portion comprises a layer comprising blue light emitting quantum dots.
5
US10590340B2
Quantum dots, a composition or composite including the same, and an electronic device including the same
Publication/Patent Number: US10590340B2 Publication Date: 2020-03-17 Application Number: 16/245,728 Filing Date: 2019-01-11 Inventor: Jang, Eun Joo   Kim, Ji Yeong   Hwang, Sungwoo   Won, Yuho   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: B82Y40/00 Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.
6
US10782611B2
Quantum dots, a composition or composite including the same, and en electronic device including the same
Publication/Patent Number: US10782611B2 Publication Date: 2020-09-22 Application Number: 15/900,519 Filing Date: 2018-02-20 Inventor: Yang, Hyeyeon   Jang, Eun Joo   Jang, Hyo Sook   Jun, Shin Ae   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: G03F7/028 Abstract: A photosensitive composition, a quantum dot polymer composite pattern prepared therefrom, and a layered structure and an electronic device including the same. The photosensitive composition includes plurality of quantum dots; a luminescent material other than a quantum dot; a carboxylic acid group containing binder; a photopolymerizable monomer having a carbon-carbon double bond; and a photoinitiator, and the luminescent material comprises a fluorophore, a nanosized inorganic phosphor, or a combination thereof.
7
US10739634B2
Backlight unit and liquid crystal display including same
Publication/Patent Number: US10739634B2 Publication Date: 2020-08-11 Application Number: 15/670,399 Filing Date: 2017-08-07 Inventor: Kang, Hyun A   Jang, Eun Joo   Jang, Hyo Sook   Jun, Shin Ae   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: G02F1/1335 Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.
8
US2020371396A1
BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME
Publication/Patent Number: US2020371396A1 Publication Date: 2020-11-26 Application Number: 16/989,794 Filing Date: 2020-08-10 Inventor: Kang, Hyun A.   Jang, Eun Joo   Jang, Hyo Sook   Jun, Shin Ae   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: G02F1/1335 Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.
9
US2020224094A1
CORE SHELL QUANTUM DOT AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020224094A1 Publication Date: 2020-07-16 Application Number: 16/739,595 Filing Date: 2020-01-10 Inventor: Won, Yuho   Kim, Yong Wook   Jang, Eun Joo   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.
10
EP3733814A1
CADMIUM FREE QUANTUM DOT INCLUDING LITHIUM, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: EP3733814A1 Publication Date: 2020-11-04 Application Number: 20170193.5 Filing Date: 2020-04-17 Inventor: Kim, Yong Wook   Jang, Eun Joo   Jang, Hyo Sook   Kwon, Soo Kyung   Kim, Seon-yeong   Kim, Ji-yeong   Assignee: Samsung Electronics Co., Ltd.   IPC: C09K11/88 Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.
11
US2020024512A1
QUANTUM DOTS, PRODUCTION METHOD THEREOF, AND COMPOSITE AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020024512A1 Publication Date: 2020-01-23 Application Number: 16/519,188 Filing Date: 2019-07-23 Inventor: Min, Jihyun   Kim, Seon-yeong   Jang, Eun Joo   Jang, Hyo Sook   Kwon, Soo Kyung   Kim, Yong Wook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/70 Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
12
US202024512A1
QUANTUM DOTS, PRODUCTION METHOD THEREOF, AND COMPOSITE AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US202024512A1 Publication Date: 2020-01-23 Application Number: 20/191,651 Filing Date: 2019-07-23 Inventor: Jang, Eun Joo   Kim, Yong Wook   Jang, Hyo Sook   Min, Jihyun   Kwon, Soo Kyung   Kim, Seon-yeong   Assignee: Samsung Electronics Co., Ltd.   IPC: C09K11/70 Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
13
KR20200011029A
QUANTUM DOTS PRODUCTION METHOD THEREOF COMPOSITE AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: KR20200011029A Publication Date: 2020-01-31 Application Number: 20190089161 Filing Date: 2019-07-23 Inventor: Min, Ji Hyun   Kim, Yong Wook   Jang, Hyo Sook   Jang, Eun Joo   Kim, Seon Yeong   Kwon, Soo Kyung   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: 반도체 나노결정 코어 및 상기 코어 상에 배치되고 반도체 나노결정 쉘을 포함하되, 카드뮴을 포함하지 않으며, 상기 코어는, III-V족 화합물을 포함하고, 상기 양자점은, 녹색광 파장 영역에서 최대 광발광 피크를 가지고, 상기 최대 광발광 피크의 반치폭은 50 nm 미만이고, 상기 최대 광발광 피크의 파장과 상기 양자점의 제1 흡수 피크 파장 간의 차이가 25 nm 이하인 양자점과 그 제조 방법에 대한 것이다.
14
US2020332190A1
CADMIUM FREE QUANTUM DOT INCLUDING LITHIUM, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020332190A1 Publication Date: 2020-10-22 Application Number: 16/851,520 Filing Date: 2020-04-17 Inventor: Kim, Yong Wook   Jang, Eun Joo   Jang, Hyo Sook   Kwon, Soo Kyung   Kim, Seon-yeong   Kim, Ji-yeong   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.
15
US10711193B2
Quantum dots and production methods thereof, and quantum dot polymer composites and electronic devices including the same
Publication/Patent Number: US10711193B2 Publication Date: 2020-07-14 Application Number: 16/205,323 Filing Date: 2018-11-30 Inventor: Kim, Yongwook   Hwang, Sungwoo   Kwon, Soo Kyung   Won, Yuho   Jang, Eun Joo   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: A quantum dot, a method of producing the same, a quantum dot polymer composite including the same, and an electronic device. The quantum dot includes a core including a first semiconductor nanocrystal and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a metal dopant, wherein the first semiconductor nanocrystal includes a Group II-VI compound, a Group III-V compound, or a combination thereof, the second semiconductor nanocrystal includes a Group II-VI compound, and the metal dopant includes hafnium, zirconium, titanium, or a combination thereof.
16
US10759992B2
Semiconductor nanocrystal and preparation method thereof
Publication/Patent Number: US10759992B2 Publication Date: 2020-09-01 Application Number: 15/429,816 Filing Date: 2017-02-10 Inventor: Jang, Eun-joo   Hong, Seok-hwan   Jun, Shin-ae   Jang hyo sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/62 Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.
17
US2020399532A1
SEMICONDUCTOR NANOCRYSTAL AND PREPARATION METHOD THEREOF
Publication/Patent Number: US2020399532A1 Publication Date: 2020-12-24 Application Number: 17/007,283 Filing Date: 2020-08-31 Inventor: Jang, Eun-joo   Hong, Seok-hwan   Jun, Shin-ae   Jang hyo sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/02 Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.
18
EP3715318A1
METHOD FOR PREPARATION OF A SEMICONDUCTOR NANOCRYSTAL
Publication/Patent Number: EP3715318A1 Publication Date: 2020-09-30 Application Number: 20166785.4 Filing Date: 2010-07-07 Inventor: Jang, Eun-joo   Hong, Seok-hwan   Jun, Shin-ae   Jang hyo sook   Assignee: Samsung Electronics Co., Ltd.   IPC: B82B3/00 Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.
19
US2020283680A1
QUANTUM DOT POLYMER COMPOSITES AND DEVICES INCLUDING THE SAME
Publication/Patent Number: US2020283680A1 Publication Date: 2020-09-10 Application Number: 16/883,989 Filing Date: 2020-05-26 Inventor: Jun, Shin Ae   Kim, Taekhoon   Park, Garam   Han, Yong Seok   Jang, Eun Joo   Jang, Hyo Sook   Jeong, Tae Won   Park, Shang Hyeun   Assignee: SAMSUNG ELECTRONICS CO., LTD.   Samsung SDI Co., Ltd.   Samsung Display Co., Ltd.   IPC: C09K11/02 Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
20
US2020217974A1
POPULATION OF QUANTUM DOTS AND A COMPOSITION INCLUDING THE SAME
Publication/Patent Number: US2020217974A1 Publication Date: 2020-07-09 Application Number: 16/825,293 Filing Date: 2020-03-20 Inventor: Park, Garam   Kim, Tae Gon   Won, Nayoun   Jun, Shin Ae   Kwon, Soo Kyung   Kim, Seon-yeong   Park, Shang Hyeun   Ahn, Jooyeon   Won, Yuho   Jang, Eun Joo   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   SAMSUNG DISPLAY CO., LTD.   SAMSUNG SDI CO., LTD.   IPC: G01T7/00 Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
Total 12 pages