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1 | US2021040386A1 |
SEMICONDUCTOR NANOCRYSTAL PARTICLE AND PRODUCTION METHODS THEREOF
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Publication/Patent Number: US2021040386A1 | Publication Date: 2021-02-11 | Application Number: 16/986,384 | Filing Date: 2020-08-06 | Inventor： Min, Jihyun Jang, Eun Joo Sargent, Edward H. Jang, Hyo Sook Saidaminov, Makhsud I. Hoogland, Sjoerd Jain, Ankit Johnston, Andrew Voznyy, Oleksandr | Assignee: SAMSUNG ELECTRONICS CO., LTD. The Governing Council of the University of Toronto | IPC: C09K11/75 | Abstract: A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ). Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x≤3, −1<α<1, 3+α−x>0, −1<β<1, and −1<γ<1. | |||
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2 | US10717649B2 |
Processes for synthesizing nanocrystals
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Publication/Patent Number: US10717649B2 | Publication Date: 2020-07-21 | Application Number: 16/117,394 | Filing Date: 2018-08-30 | Inventor： Jang, Hyo Sook Jun, Shin Ae Jang, Eun Joo | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/00 | Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4. | |||
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3 | US2020216755A1 |
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
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Publication/Patent Number: US2020216755A1 | Publication Date: 2020-07-09 | Application Number: 16/817,902 | Filing Date: 2020-03-13 | Inventor： Jang, Hyo Sook Won, Yuho Hwang, Sungwoo Kim, Ji Yeong Jang, Eun Joo | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/08 | Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD. | |||
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4 | US2020411784A1 |
DISPLAY DEVICE
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Publication/Patent Number: US2020411784A1 | Publication Date: 2020-12-31 | Application Number: 16/910,369 | Filing Date: 2020-06-24 | Inventor： Jang, Hyo Sook Kim, Tae Hyung Jang, Eun Joo Cho, Oul | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: H01L51/50 | Abstract: A display device including a light source; and a quantum dot emission layer disposed on the light source, wherein the quantum dot emission layer includes a first emission layer disposed in a red pixel of the display device, and a second emission layer disposed in a green pixel of the display device, the light source includes a first portion configured to supply a first incident light to the first emission layer, a second portion configured to supply a second incident light to the second emission layer, and a third portion configured to supply a third light to a blue pixel of the display device, the first emission layer includes red light emitting quantum dots and the second emission layer includes green light emitting quantum dots, and each of the first portion, the second portion, and the third portion comprises a layer comprising blue light emitting quantum dots. | |||
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5 | US10590340B2 |
Quantum dots, a composition or composite including the same, and an electronic device including the same
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Publication/Patent Number: US10590340B2 | Publication Date: 2020-03-17 | Application Number: 16/245,728 | Filing Date: 2019-01-11 | Inventor： Jang, Eun Joo Kim, Ji Yeong Hwang, Sungwoo Won, Yuho Jang, Hyo Sook | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: B82Y40/00 | Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD. | |||
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6 | US10782611B2 |
Quantum dots, a composition or composite including the same, and en electronic device including the same
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Publication/Patent Number: US10782611B2 | Publication Date: 2020-09-22 | Application Number: 15/900,519 | Filing Date: 2018-02-20 | Inventor： Yang, Hyeyeon Jang, Eun Joo Jang, Hyo Sook Jun, Shin Ae | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: G03F7/028 | Abstract: A photosensitive composition, a quantum dot polymer composite pattern prepared therefrom, and a layered structure and an electronic device including the same. The photosensitive composition includes plurality of quantum dots; a luminescent material other than a quantum dot; a carboxylic acid group containing binder; a photopolymerizable monomer having a carbon-carbon double bond; and a photoinitiator, and the luminescent material comprises a fluorophore, a nanosized inorganic phosphor, or a combination thereof. | |||
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7 | US10739634B2 |
Backlight unit and liquid crystal display including same
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Publication/Patent Number: US10739634B2 | Publication Date: 2020-08-11 | Application Number: 15/670,399 | Filing Date: 2017-08-07 | Inventor： Kang, Hyun A Jang, Eun Joo Jang, Hyo Sook Jun, Shin Ae | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: G02F1/1335 | Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer. | |||
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8 | US2020371396A1 |
BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME
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Publication/Patent Number: US2020371396A1 | Publication Date: 2020-11-26 | Application Number: 16/989,794 | Filing Date: 2020-08-10 | Inventor： Kang, Hyun A. Jang, Eun Joo Jang, Hyo Sook Jun, Shin Ae | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: G02F1/1335 | Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer. | |||
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9 | US2020224094A1 |
CORE SHELL QUANTUM DOT AND ELECTRONIC DEVICE INCLUDING THE SAME
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Publication/Patent Number: US2020224094A1 | Publication Date: 2020-07-16 | Application Number: 16/739,595 | Filing Date: 2020-01-10 | Inventor： Won, Yuho Kim, Yong Wook Jang, Eun Joo Jang, Hyo Sook | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/88 | Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same. | |||
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10 | EP3733814A1 |
CADMIUM FREE QUANTUM DOT INCLUDING LITHIUM, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE SAME
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Publication/Patent Number: EP3733814A1 | Publication Date: 2020-11-04 | Application Number: 20170193.5 | Filing Date: 2020-04-17 | Inventor： Kim, Yong Wook Jang, Eun Joo Jang, Hyo Sook Kwon, Soo Kyung Kim, Seon-yeong Kim, Ji-yeong | Assignee: Samsung Electronics Co., Ltd. | IPC: C09K11/88 | Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%. | |||
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11 | US2020024512A1 |
QUANTUM DOTS, PRODUCTION METHOD THEREOF, AND COMPOSITE AND ELECTRONIC DEVICE INCLUDING THE SAME
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Publication/Patent Number: US2020024512A1 | Publication Date: 2020-01-23 | Application Number: 16/519,188 | Filing Date: 2019-07-23 | Inventor： Min, Jihyun Kim, Seon-yeong Jang, Eun Joo Jang, Hyo Sook Kwon, Soo Kyung Kim, Yong Wook | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/70 | Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof. | |||
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12 | US202024512A1 |
QUANTUM DOTS, PRODUCTION METHOD THEREOF, AND COMPOSITE AND ELECTRONIC DEVICE INCLUDING THE SAME
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Publication/Patent Number: US202024512A1 | Publication Date: 2020-01-23 | Application Number: 20/191,651 | Filing Date: 2019-07-23 | Inventor： Jang, Eun Joo Kim, Yong Wook Jang, Hyo Sook Min, Jihyun Kwon, Soo Kyung Kim, Seon-yeong | Assignee: Samsung Electronics Co., Ltd. | IPC: C09K11/70 | Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof. | |||
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13 | KR20200011029A |
QUANTUM DOTS PRODUCTION METHOD THEREOF COMPOSITE AND ELECTRONIC DEVICE INCLUDING THE SAME
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Publication/Patent Number: KR20200011029A | Publication Date: 2020-01-31 | Application Number: 20190089161 | Filing Date: 2019-07-23 | Inventor： Min, Ji Hyun Kim, Yong Wook Jang, Hyo Sook Jang, Eun Joo Kim, Seon Yeong Kwon, Soo Kyung | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/88 | Abstract: 반도체 나노결정 코어 및 상기 코어 상에 배치되고 반도체 나노결정 쉘을 포함하되, 카드뮴을 포함하지 않으며, 상기 코어는, III-V족 화합물을 포함하고, 상기 양자점은, 녹색광 파장 영역에서 최대 광발광 피크를 가지고, 상기 최대 광발광 피크의 반치폭은 50 nm 미만이고, 상기 최대 광발광 피크의 파장과 상기 양자점의 제1 흡수 피크 파장 간의 차이가 25 nm 이하인 양자점과 그 제조 방법에 대한 것이다. | |||
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14 | US2020332190A1 |
CADMIUM FREE QUANTUM DOT INCLUDING LITHIUM, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE SAME
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Publication/Patent Number: US2020332190A1 | Publication Date: 2020-10-22 | Application Number: 16/851,520 | Filing Date: 2020-04-17 | Inventor： Kim, Yong Wook Jang, Eun Joo Jang, Hyo Sook Kwon, Soo Kyung Kim, Seon-yeong Kim, Ji-yeong | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/88 | Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%. | |||
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15 | US10711193B2 |
Quantum dots and production methods thereof, and quantum dot polymer composites and electronic devices including the same
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Publication/Patent Number: US10711193B2 | Publication Date: 2020-07-14 | Application Number: 16/205,323 | Filing Date: 2018-11-30 | Inventor： Kim, Yongwook Hwang, Sungwoo Kwon, Soo Kyung Won, Yuho Jang, Eun Joo Jang, Hyo Sook | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/88 | Abstract: A quantum dot, a method of producing the same, a quantum dot polymer composite including the same, and an electronic device. The quantum dot includes a core including a first semiconductor nanocrystal and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a metal dopant, wherein the first semiconductor nanocrystal includes a Group II-VI compound, a Group III-V compound, or a combination thereof, the second semiconductor nanocrystal includes a Group II-VI compound, and the metal dopant includes hafnium, zirconium, titanium, or a combination thereof. | |||
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16 | US10759992B2 |
Semiconductor nanocrystal and preparation method thereof
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Publication/Patent Number: US10759992B2 | Publication Date: 2020-09-01 | Application Number: 15/429,816 | Filing Date: 2017-02-10 | Inventor： Jang, Eun-joo Hong, Seok-hwan Jun, Shin-ae Jang hyo sook | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/62 | Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal. | |||
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17 | US2020399532A1 |
SEMICONDUCTOR NANOCRYSTAL AND PREPARATION METHOD THEREOF
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Publication/Patent Number: US2020399532A1 | Publication Date: 2020-12-24 | Application Number: 17/007,283 | Filing Date: 2020-08-31 | Inventor： Jang, Eun-joo Hong, Seok-hwan Jun, Shin-ae Jang hyo sook | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: C09K11/02 | Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal. | |||
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18 | EP3715318A1 |
METHOD FOR PREPARATION OF A SEMICONDUCTOR NANOCRYSTAL
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Publication/Patent Number: EP3715318A1 | Publication Date: 2020-09-30 | Application Number: 20166785.4 | Filing Date: 2010-07-07 | Inventor： Jang, Eun-joo Hong, Seok-hwan Jun, Shin-ae Jang hyo sook | Assignee: Samsung Electronics Co., Ltd. | IPC: B82B3/00 | Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal. | |||
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19 | US2020283680A1 |
QUANTUM DOT POLYMER COMPOSITES AND DEVICES INCLUDING THE SAME
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Publication/Patent Number: US2020283680A1 | Publication Date: 2020-09-10 | Application Number: 16/883,989 | Filing Date: 2020-05-26 | Inventor： Jun, Shin Ae Kim, Taekhoon Park, Garam Han, Yong Seok Jang, Eun Joo Jang, Hyo Sook Jeong, Tae Won Park, Shang Hyeun | Assignee: SAMSUNG ELECTRONICS CO., LTD. Samsung SDI Co., Ltd. Samsung Display Co., Ltd. | IPC: C09K11/02 | Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core. | |||
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20 | US2020217974A1 |
POPULATION OF QUANTUM DOTS AND A COMPOSITION INCLUDING THE SAME
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Publication/Patent Number: US2020217974A1 | Publication Date: 2020-07-09 | Application Number: 16/825,293 | Filing Date: 2020-03-20 | Inventor： Park, Garam Kim, Tae Gon Won, Nayoun Jun, Shin Ae Kwon, Soo Kyung Kim, Seon-yeong Park, Shang Hyeun Ahn, Jooyeon Won, Yuho Jang, Eun Joo Jang, Hyo Sook | Assignee: SAMSUNG ELECTRONICS CO., LTD. SAMSUNG DISPLAY CO., LTD. SAMSUNG SDI CO., LTD. | IPC: G01T7/00 | Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85. |
3.Current Quota