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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
US2021020462A1
SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD USING THE SAME
Publication/Patent Number: US2021020462A1 Publication Date: 2021-01-21 Application Number: 16/739,409 Filing Date: 2020-01-10 Inventor: Jeong, Jihoon   Park, Mihyun   Ko, Yongsun   Lee, Kwangwook   Lee, Kuntack   Jeon, Hayoung   Cho, Yongjhin   Cha, Jihoon   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L21/67 Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.
2
US10580617B2
Method and apparatus for plasma etching
Publication/Patent Number: US10580617B2 Publication Date: 2020-03-03 Application Number: 15/841,230 Filing Date: 2017-12-13 Inventor: Park, Kijong   Yang, Jun-youl   Ko, Yongsun   Kim, Kyunghyun   Kim, Taeheon   Shin, Jae Jin   Assignee: Samsung Electronics Co., Ltd.   IPC: H01J37/32 Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.
3
US2020227253A1
SUPERCRITICAL DRYING APPARATUS AND METHOD OF DRYING SUBSTRATE USING THE SAME
Publication/Patent Number: US2020227253A1 Publication Date: 2020-07-16 Application Number: 16/561,078 Filing Date: 2019-09-05 Inventor: Park, Sangjine   Cho, Byung-kwon   Jeong, Jihoon   Kim, Youngtak   Ko, Yongsun   Jeon, Seulgee   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L21/02 Abstract: A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.
4
US2020388484A1
WAFER CLEANING APPARATUS BASED ON LIGHT IRRADIATION AND WAFER CLEANING SYSTEM INCLUDING THE SAME
Publication/Patent Number: US2020388484A1 Publication Date: 2020-12-10 Application Number: 16/744,667 Filing Date: 2020-01-16 Inventor: Cho, Byungkwon   Park, Sangjine   Ko, Yongsun   Jeon, Seulgee   Jeong, Jihoon   Hong, Seongsik   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L21/02 Abstract: Provided are a wafer cleaning apparatus based on light irradiation capable of effectively cleaning residue on a wafer without damaging the wafer, and a wafer cleaning system including the cleaning apparatus. The wafer cleaning apparatus is configured to clean residue on the wafer by light irradiation and includes: a light irradiation unit configured to irradiate light onto the wafer during the light irradiation; a wafer processing unit configured accommodate the wafer and to control a position of the wafer such that the light is irradiated onto the wafer during the light irradiation; and a cooling unit configured to cool the wafer after the light irradiation has been completed. The light irradiation unit, the wafer processing unit, and the cooling unit are sequentially arranged in a vertical structure with the light irradiation unit above the wafer processing unit and the wafer processing unit above the cooling unit.
5
EP3255661B1
SUBSTRATE TREATMENT METHOD USING SUPERCRITICAL FLUID
Publication/Patent Number: EP3255661B1 Publication Date: 2020-07-01 Application Number: 17177554.7 Filing Date: 2014-03-07 Inventor: Cho, Yong-jhin   Ko, Yongsun   Kim, Kyoungseob   Kim, Kwangsu   Kim, Seokhoon   Oh, Jung-min   Lee, Kuntack   Jang, Wonho   Jun, Yongmyung   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L21/67
6
US10361100B2
Apparatus and methods for treating a substrate
Publication/Patent Number: US10361100B2 Publication Date: 2019-07-23 Application Number: 15/368,988 Filing Date: 2016-12-05 Inventor: Lee, Hyosan   Ko, Yongsun   Kim, Kyoungseob   Kim, Kwangsu   Kim, Seokhoon   Lee, Kuntack   Jun, Yongmyung   Cho, Yong-jhin   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L21/67 Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.
7
US10242880B2
Method of wet etching and method of fabricating semiconductor device using the same
Publication/Patent Number: US10242880B2 Publication Date: 2019-03-26 Application Number: 15/645,419 Filing Date: 2017-07-10 Inventor: Kim, Kwangsu   Cha, Se-ho   Ko, Yongsun   Kim, Keonyoung   Kim, Kyunghyun   Mun, Changsup   Seong, Choongkee   Song, Sunjoong   Lee, Jinwoo   Han, Hoon   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L21/311 Abstract: Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath.
8
US9859432B2
Semiconductor devices having spacer protection pattern
Publication/Patent Number: US9859432B2 Publication Date: 2018-01-02 Application Number: 15/245,549 Filing Date: 2016-08-24 Inventor: Han, Jeongnam   Ko, Yongsun   Pae, Sangwoo   Yeo, Kyounghwan   Ko, Yongsun   Assignee: Samsung Electronics Co., Ltd.   Samsung Electronics, Inc.   IPC: H01L29/423 Abstract: A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair of the active patterns in a second direction crossing the first direction, gate spacers on sidewalls of the pair of the active patterns, source/drain regions on the pair active patterns between the pair of the gate electrodes, and a spacer protection pattern between the pair of the gate electrodes and between the pair of the active patterns. The spacer protection pattern may be commonly connected to the gate spacers.
9
US10084051B2
Semiconductor devices including field effect transistors and methods of fabricating the same
Publication/Patent Number: US10084051B2 Publication Date: 2018-09-25 Application Number: 15/133,424 Filing Date: 2016-04-20 Inventor: Park, Sangjine   Lee, Jae-hwan   Ko, Yongsun   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L29/78 Abstract: A semiconductor device includes a fin structure on a substrate, device isolation patterns on the substrate at opposite sides of the fin structure, a gate electrode intersecting the fin structure and the device isolation patterns, a gate dielectric pattern between the gate electrode and the fin structure and between the gate electrode and the device isolation patterns, and gate spacers on opposite sidewalls of the gate electrode, wherein, on each of the device isolation patterns, a bottom surface of the gate dielectric pattern is at a higher level than bottom surfaces of the gate spacers.
10
US10096453B2
Method and apparatus for plasma etching
Publication/Patent Number: US10096453B2 Publication Date: 2018-10-09 Application Number: 15/133,989 Filing Date: 2016-04-20 Inventor: Park, Kijong   Yang, Jun-youl   Ko, Yongsun   Kim, Kyunghyun   Kim, Taeheon   Shin, Jae Jin   Assignee: Samsung Electronics Co., Ltd.   IPC: H01J37/32 Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.
11
US9934959B2
Method and apparatus for purifying cleaning agent
Publication/Patent Number: US9934959B2 Publication Date: 2018-04-03 Application Number: 14/537,318 Filing Date: 2014-11-10 Inventor: Cho, Yong-jhin   Oh, Jung-min   Jun, Yongmyung   Ko, Yongsun   Lee, Kuntack   Lee, Hyosan   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L21/02 Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.
12
US2018102235A1
METHOD AND APPARATUS FOR PLASMA ETCHING
Publication/Patent Number: US2018102235A1 Publication Date: 2018-04-12 Application Number: 15/841,230 Filing Date: 2017-12-13 Inventor: Shin, Jae Jin   Kim, Taeheon   Kim, Kyunghyun   Ko, Yongsun   Yang, Jun-youl   Park, Kijong   Assignee: Samsung Electronics Co., Ltd.   IPC: H01J37/32 Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.
13
US10128120B2
Method of treating a layer
Publication/Patent Number: US10128120B2 Publication Date: 2018-11-13 Application Number: 15/242,190 Filing Date: 2016-08-19 Inventor: Kim, Kwangsu   Park, Byoung Jae   Ko, Yongsun   Kim, Kyunghyun   Mun, Changsup   Park, Kijong   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L21/3065 Abstract: The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.
14
US9941110B2
Manufacturing method and fluid supply system for treating substrate
Publication/Patent Number: US9941110B2 Publication Date: 2018-04-10 Application Number: 15/350,983 Filing Date: 2016-11-14 Inventor: Oh, Jung-min   Lee, Hyosan   Ko, Yongsun   Kim, Kyoungseob   Kim, Seokhoon   Lee, Kuntack   Jun, Yongmyung   Cho, Yong-jhin   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L21/67 Abstract: A method of manufacture and fluid supply system for treating a substrate is provided. The fluid supply system for treating a substrate may include a substrate dry part supplying a dry fluid to dry a rinse solution doped on a substrate; a dry fluid separation part retrieving a mixed fluid that the dry fluid and the rinse solution are mixed with each other during a dry process of the substrate from the substrate dry part and separating the dry fluid from the mixed fluid; and a dry fluid supply part resupplying the dry fluid separated from the dry fluid separation part to the substrate dry part.
15
US10155903B2
Metal etchant compositions and methods of fabricating a semiconductor device using the same
Publication/Patent Number: US10155903B2 Publication Date: 2018-12-18 Application Number: 15/075,709 Filing Date: 2016-03-21 Inventor: Lee, Hyosan   Ko, Yongsun   Kim, Kyoungseob   Lee, Kuntack   Jeong, Jihoon   Lin, Chen   Ober, Christopher K.   Assignee: Samsung Electronics Co., Ltd.   Cornell University   IPC: B44C1/22 Abstract: The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
16
US2018102254A1
Method of Wet Etching and Method of Fabricating Semiconductor Device Using the Same
Publication/Patent Number: US2018102254A1 Publication Date: 2018-04-12 Application Number: 15/645,419 Filing Date: 2017-07-10 Inventor: Han, Hoon   Lee, Jinwoo   Song, Sunjoong   Seong, Choongkee   Mun, Changsup   Kim, Kyunghyun   Kim, Keonyoung   Ko, Yongsun   Cha, Se-ho   Kim, Kwangsu   Assignee: HAN, Hoon   LEE, Jinwoo   SONG, Sunjoong   SEONG, Choongkee   MUN, ChangSup   KIM, Kyunghyun   KIM, Keonyoung   KO, Yongsun   CHA, Se-Ho   Kim, Kwangsu   IPC: H01L27/11582 Abstract: Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath,
17
DE102016119492A1
Halbleitervorrichtungen
Title (English): semiconductor device
Publication/Patent Number: DE102016119492A1 Publication Date: 2017-06-01 Application Number: 102016119492 Filing Date: 2016-10-13 Inventor: Ko, Yongsun   Han, Jeongnam   Cho, Hagju   Park, Byungjae   Park, Sangjine   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L21/8234 Abstract: Eine Halbleitervorrichtung kann ein Paar von aktiven Strukturen (AP) beabstandet voneinander in einer ersten Richtung (D1) aufweisen
18
US2017154991A1
Semiconductor Devices
Publication/Patent Number: US2017154991A1 Publication Date: 2017-06-01 Application Number: 15/245,549 Filing Date: 2016-08-24 Inventor: Ko, Yongsun   Park, Sangjine   Cho, Hagju   Park, Byungjae   Han, Jeongnam   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L29/78 Abstract: A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair of the active patterns in a second direction crossing the first direction, gate spacers on sidewalls of the pair of the active patterns, source/drain regions on the pair active patterns between the pair of the gate electrodes, and a spacer protection pattern between the pair of the gate electrodes and between the pair of the active patterns. The spacer protection pattern may be commonly connected to the gate spacers.
19
US9589901B2
Semiconductor wafers including indications of crystal orientation and methods of forming the same
Publication/Patent Number: US9589901B2 Publication Date: 2017-03-07 Application Number: 14/519,788 Filing Date: 2014-10-21 Inventor: Koo, Tae-hyoung   Choi, Samjong   Lee, Dongjun   Ko, Yongsun   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L23/544 Abstract: A wafer can be provided to include a single crystalline semiconductor material with a predetermined crystal orientation. The wafer can include a laser mark at a determined position on a front surface or on a back surface of the wafer, where the determined position is configured to indicate the predetermined crystal orientation of the single crystalline semiconductor material.
20
US9595434B2
Apparatus and methods for manufacturing semiconductor devices and treating substrates
Publication/Patent Number: US9595434B2 Publication Date: 2017-03-14 Application Number: 14/704,912 Filing Date: 2015-05-05 Inventor: Kim, Kyoungseob   Ko, Yongsun   Kim, Kyoung Hwan   Kim, Seokhoon   Lee, Kuntack   Lee, Hyosan   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L21/00 Abstract: A method of manufacturing a semiconductor device includes: forming a pattern on a surface of a semiconductor substrate; placing the substrate on a platform of a substrate treatment apparatus; rotating the wafer while applying a cleaning liquid from a first nozzle and a wetting liquid from a second nozzle to treat a first region on the surface of the substrate; vertically changing the distance of the second nozzle together with the first nozzle with respect to the platform; after the vertical change, rotating the wafer while applying the cleaning liquid from the first nozzle and the wetting liquid from the second nozzle to treat a second region on the surface of the substrate; and forming a semiconductor device from the treated substrate.
Total 4 pages