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1
US10763289B2
Light blocking layer for image sensor device
Publication/Patent Number: US10763289B2 Publication Date: 2020-09-01 Application Number: 16/657,469 Filing Date: 2019-10-18 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Assignee: Taiwan Semiconductor Manuracturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.
2
US10692911B2
Polarizers for image sensor devices
Publication/Patent Number: US10692911B2 Publication Date: 2020-06-23 Application Number: 16/521,181 Filing Date: 2019-07-24 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
3
US2020035734A1
INCREASED OPTICAL PATH FOR LONG WAVELENGTH LIGHT BY GRATING STRUCTURE
Publication/Patent Number: US2020035734A1 Publication Date: 2020-01-30 Application Number: 16/578,296 Filing Date: 2019-09-21 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
4
US10804307B2
Increased optical path for long wavelength light by grating structure
Publication/Patent Number: US10804307B2 Publication Date: 2020-10-13 Application Number: 16/578,296 Filing Date: 2019-09-21 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
5
US2020052022A1
Light Blocking Layer for Image Sensor Device
Publication/Patent Number: US2020052022A1 Publication Date: 2020-02-13 Application Number: 16/657,469 Filing Date: 2019-10-18 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.
6
US202052022A1
Light Blocking Layer for Image Sensor Device
Publication/Patent Number: US202052022A1 Publication Date: 2020-02-13 Application Number: 20/191,665 Filing Date: 2019-10-18 Inventor: Lee kuo cheng   Cheng, Yun-wei   Chou, Chun-hao   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.
7
US2020321379A1
POLARIZERS FOR IMAGE SENSOR DEVICES
Publication/Patent Number: US2020321379A1 Publication Date: 2020-10-08 Application Number: 16/907,788 Filing Date: 2020-06-22 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
8
US202035734A1
INCREASED OPTICAL PATH FOR LONG WAVELENGTH LIGHT BY GRATING STRUCTURE
Publication/Patent Number: US202035734A1 Publication Date: 2020-01-30 Application Number: 20/191,657 Filing Date: 2019-09-21 Inventor: Lee kuo cheng   Chou, Chun-hao   Cheng, Yun-wei   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
9
US2020066777A1
INCREASED OPTICAL PATH FOR LONG WAVELENGTH LIGHT BY GRATING STRUCTURE
Publication/Patent Number: US2020066777A1 Publication Date: 2020-02-27 Application Number: 16/672,814 Filing Date: 2019-11-04 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
10
US2020099846A1
Image Sensor for Sensing LED Light with Reduced Flickering
Publication/Patent Number: US2020099846A1 Publication Date: 2020-03-26 Application Number: 16/264,212 Filing Date: 2019-01-31 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Chen, Hsin-chi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H04N5/235 Abstract: An image sensor device has a first number of first pixels disposed in a substrate and a second number of second pixels disposed in the substrate. The first number is substantially equal to the second number. A light-blocking structure disposed over the first pixels and the second pixels. The light-blocking structure defines a plurality of first openings and second openings through which light can pass. The first openings are disposed over the first pixels. The second openings are disposed over the second pixels. The second openings are smaller than the first openings. A microcontroller is configured to turn on different ones of the second pixels at different points in time.
11
US2020135785A1
IMAGE SENSOR AND METHOD OF MAKING
Publication/Patent Number: US2020135785A1 Publication Date: 2020-04-30 Application Number: 16/595,092 Filing Date: 2019-10-07 Inventor: Chen, Po-han   Chen, Chen-chun   Chang, Fu-cheng   Lee kuo cheng   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.   IPC: H01L27/146 Abstract: An image sensor includes a substrate and a first photodiode (PD) having a first size in the substrate. The image sensor further includes a second PD having a second size in the substrate, wherein the first size is different from the second size. The image sensor further includes a first buffer layer over the substrate. The image sensor further includes a shield layer over the first buffer, wherein the first buffer layer and the shield layer define a first recess aligned with the first PD and a second recess aligned with the second PD. The image sensor further includes a flicker reduction layer in the first recess, wherein the second recess is free of the flicker reduction layer.
12
US10770501B2
Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters
Publication/Patent Number: US10770501B2 Publication Date: 2020-09-08 Application Number: 15/785,595 Filing Date: 2017-10-17 Inventor: Lee kuo cheng   Cheng, Yun-wei   Hsu, Yung-lung   Chen, Hsin-chi   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.   IPC: H01L27/146 Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
13
US2020395395A1
Back Side Illuminated Image Sensor with Deep Trench Isolation Structures and Self-Aligned Color Filters
Publication/Patent Number: US2020395395A1 Publication Date: 2020-12-17 Application Number: 17/007,684 Filing Date: 2020-08-31 Inventor: Lee kuo cheng   Cheng, Yun-wei   Hsu, Yung-lung   Chen, Hsin-chi   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L27/146 Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
14
US10872921B2
Image sensor and method for fabricating the image sensor
Publication/Patent Number: US10872921B2 Publication Date: 2020-12-22 Application Number: 16/118,335 Filing Date: 2018-08-30 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Chen, Hsin-chi   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L27/146 Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.
15
US2020035732A1
IMAGE SENSOR DEVICE
Publication/Patent Number: US2020035732A1 Publication Date: 2020-01-30 Application Number: 16/595,729 Filing Date: 2019-10-08 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Huang, Hsun-ying   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure includes a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, the etch stop layer is between the first insulating layer and the substrate, and the etch stop layer, the first insulating layer, and the substrate are made of different materials. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure is in direct contact with the etch stop layer, the second isolation structure surrounds the light-sensing region, and the second isolation structure includes a light-blocking structure.
16
US10854530B1
Heat dissipation structures
Publication/Patent Number: US10854530B1 Publication Date: 2020-12-01 Application Number: 16/528,207 Filing Date: 2019-07-31 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Chen, Ying-hao   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L23/367 Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.
17
US2020075661A1
IMAGE SENSOR AND METHOD FOR FABRICATING THE IMAGE SENSOR
Publication/Patent Number: US2020075661A1 Publication Date: 2020-03-05 Application Number: 16/118,335 Filing Date: 2018-08-30 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Chen, Hsin-chi   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L27/146 Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.
18
US2020177830A1
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Publication/Patent Number: US2020177830A1 Publication Date: 2020-06-04 Application Number: 16/429,403 Filing Date: 2019-06-03 Inventor: Cheng, Yun-wei   Chun-wei, Chia   Chou, Chun-hao   Lee kuo cheng   Assignee: Taiwan Semiconductor Manufacturing Company Limited   IPC: H04N5/378 Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.
19
US2020135787A1
METHOD FOR FORMING LIGHT-SENSING DEVICE
Publication/Patent Number: US2020135787A1 Publication Date: 2020-04-30 Application Number: 16/728,568 Filing Date: 2019-12-27 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee kuo cheng   Huang, Hsun-ying   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L27/146 Abstract: A method for forming a light-sensing device is provided. The method includes forming a light-sensing region in a semiconductor substrate. The semiconductor substrate has a front surface and a light-receiving surface opposite to the front surface. The method also includes forming a first dielectric layer over the front surface and forming a second dielectric layer over the first dielectric layer. The second dielectric layer has a different refractive index than that of the first dielectric layer, and the first dielectric layer and the second dielectric layer together form a (or a part of a) light-reflective element. The method further includes partially removing the first dielectric layer and the second dielectric layer to form a contact opening. In addition, the method includes forming a conductive contact to partially (or completely) fill the contact opening.
20
US202035732A1
IMAGE SENSOR DEVICE
Publication/Patent Number: US202035732A1 Publication Date: 2020-01-30 Application Number: 20/191,659 Filing Date: 2019-10-08 Inventor: Huang, Hsun-ying   Lee kuo cheng   Chou, Chun-hao   Cheng, Yun-wei   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure includes a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, the etch stop layer is between the first insulating layer and the substrate, and the etch stop layer, the first insulating layer, and the substrate are made of different materials. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure is in direct contact with the etch stop layer, the second isolation structure surrounds the light-sensing region, and the second isolation structure includes a light-blocking structure.