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1 | US10886318B2 |
Image sensor
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Publication/Patent Number: US10886318B2 | Publication Date: 2021-01-05 | Application Number: 16/699,150 | Filing Date: 2019-11-29 | Inventor： Pyo, Junghyung Lee kyungho | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: H01L27/146 | Abstract: An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure. | |||
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2 | US2020387050A1 |
IMAGE SENSOR INCLUDING AUTO FOCUS PIXEL
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Publication/Patent Number: US2020387050A1 | Publication Date: 2020-12-10 | Application Number: 16/897,500 | Filing Date: 2020-06-10 | Inventor： Pyo, Junghyung Lee kyungho | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: G03B13/36 | Abstract: Provided is an image sensor including a pixel array including a plurality of auto focus (AF) pixels and a plurality of normal pixels, wherein each of the plurality of AF pixels comprises two sub-pixels, a light blocking member provided between the two sub-pixels, and a lens corresponding to the two sub-pixels, and wherein the light blocking member is shifted from an intermediate point of the two sub-pixels. | |||
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3 | US2020243578A1 |
IMAGE SENSOR
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Publication/Patent Number: US2020243578A1 | Publication Date: 2020-07-30 | Application Number: 16/566,943 | Filing Date: 2019-09-11 | Inventor： Pyo, Junghyung Lee kyungho | Assignee: Samsung Electronics Co., Ltd. | IPC: H01L27/146 | Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction. | |||
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4 | US2020358971A1 |
IMAGE SENSOR WITH PIXELS INCLUDING PHOTODIODES SHARING FLOATING DIFFUSION REGION
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Publication/Patent Number: US2020358971A1 | Publication Date: 2020-11-12 | Application Number: 16/852,679 | Filing Date: 2020-04-20 | Inventor： Shim, Eunsub Lee kyungho | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: H04N5/349 | Abstract: An image sensor operating in multiple resolution modes including a low resolution mode and a high resolution mode includes a pixel array including a plurality of pixels, wherein each pixel in the plurality of pixels comprises a micro-lens, a first subpixel including a first photodiode, a second subpixel including a second photodiode, and the first subpixel and the second subpixel are adjacently disposed and share a floating diffusion region. The image sensor also includes a row driver providing control signals to the pixel array to control performing of an auto focus (AF) function, such that performing the AF function includes performing the AF function according to pixel units in the high resolution mode and performing the AF function according to pixel group units in the low resolution mode. A resolution corresponding to the low resolution mode is equal to or less than ¼ times a resolution corresponding to the high resolution mode. | |||
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5 | US2020236310A1 |
IMAGE SENSOR
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Publication/Patent Number: US2020236310A1 | Publication Date: 2020-07-23 | Application Number: 16/838,517 | Filing Date: 2020-04-02 | Inventor： Shim, Eun Sub Lee kyungho | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: H04N5/355 | Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line. | |||
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6 | US2020243579A1 |
IMAGE SENSOR
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Publication/Patent Number: US2020243579A1 | Publication Date: 2020-07-30 | Application Number: 16/699,150 | Filing Date: 2019-11-29 | Inventor： Pyo, Junghyung Lee kyungho | Assignee: Samsung Electronics Co., Ltd. | IPC: H01L27/146 | Abstract: An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure. | |||
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7 | US10645315B2 |
Image sensor
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Publication/Patent Number: US10645315B2 | Publication Date: 2020-05-05 | Application Number: 15/805,368 | Filing Date: 2017-11-07 | Inventor： Shim, Eun Sub Lee kyungho | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: H04N5/355 | Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line. | |||
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8 | US2020344433A1 |
IMAGE SENSOR
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Publication/Patent Number: US2020344433A1 | Publication Date: 2020-10-29 | Application Number: 16/745,909 | Filing Date: 2020-01-17 | Inventor： Fujita, Masato Lee kyungho | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: H04N5/374 | Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate. | |||
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9 | US2020195870A1 |
IMAGE SENSOR WITH CONTROLLABLE CONVERSION GAIN
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Publication/Patent Number: US2020195870A1 | Publication Date: 2020-06-18 | Application Number: 16/511,159 | Filing Date: 2019-07-15 | Inventor： Shim, Eun Sub Lee kyungho | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: H04N5/378 | Abstract: An image sensor includes a pixel that includes a photoelectric conversion element converting an incident light to an electrical signal, a switch adjusting a capacitance of a floating diffusion (FD) node at which charges corresponding to the electrical signal are stored, and a readout circuit outputting an output voltage based on the FD node. An A/D converter may sample the output voltage transferred from the readout circuit through an output line respectively at a first time and a second time and generate a digital code based on a difference therebetween. A conversion gain controller may generate a conversion gain control signal by comparing the output voltage transferred from the readout circuit through the output line with a threshold voltage at a third time between the first and second times and provide the conversion gain control signal to the switch to set conversion gain of the pixel. | |||
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10 | US10608032B2 |
CMOS image sensors
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Publication/Patent Number: US10608032B2 | Publication Date: 2020-03-31 | Application Number: 15/405,451 | Filing Date: 2017-01-13 | Inventor： Yun, Jung Bin Lee kyungho Choi, Sung-ho | Assignee: Samsung Electronics Co., Ltd. | IPC: H01L27/146 | Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate. | |||
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11 | US2020279885A1 |
IMAGE SENSORS WITH LIGHT CHANNELING REFLECTIVE LAYERS THEREIN
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Publication/Patent Number: US2020279885A1 | Publication Date: 2020-09-03 | Application Number: 16/878,208 | Filing Date: 2020-05-19 | Inventor： Lee kyungho An, Hyuk Choi, Hyuk Soon | Assignee: Samsung Electronics Co., Ltd. | IPC: H01L27/146 | Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region. | |||
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12 | EP3708838A1 |
COMPRESSOR
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Publication/Patent Number: EP3708838A1 | Publication Date: 2020-09-16 | Application Number: 20162350.1 | Filing Date: 2020-03-11 | Inventor： Lee kyungho Park, Sangbaek Kim, Cheolhwan | Assignee: LG Electronics Inc. | IPC: F04C18/02 | Abstract: Disclosed is a scroll type compressor having an Oldham's ring having an asymmetrical structure with respect to a long or minor axis thereof. | |||
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13 | US10612744B2 |
Vehicle lamp using semiconductor light emitting device
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Publication/Patent Number: US10612744B2 | Publication Date: 2020-04-07 | Application Number: 16/028,018 | Filing Date: 2018-07-05 | Inventor： Lee, Sungwhan Song, Hooyoung Lee kyungho | Assignee: LG ELECTRONICS INC. | IPC: H01L33/36 | Abstract: The present invention relates to a vehicle lamp using a semiconductor light emitting device, and the vehicle lamp includes a light source unit to emit light. The light source unit includes a substrate having a reflective film, a semiconductor light emitting device coupled to the substrate, an insulating layer stacked on the reflective film to surround the semiconductor light emitting device, a first electrode and a second electrode disposed on an upper surface of the insulating layer, and light-transmitting connection electrodes extending from the first and second electrodes, respectively, electrically connected to the semiconductor light-emitting device, and covering an upper surface of the semiconductor light-emitting device. | |||
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14 | KR20200005097A |
LAMP USING SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
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Publication/Patent Number: KR20200005097A | Publication Date: 2020-01-15 | Application Number: 20180078341 | Filing Date: 2018-07-05 | Inventor： Joe, Jinhyoun Song, Hooyoung Lee kyungho | Assignee: LG ELECTRONICS INC. | IPC: F21S41/141 | Abstract: 본 발명은 반도체 발광소자를 이용한 램프 관한 것으로 특히, 광 균일도가 높은 램프에 관한 것이다. 본 발명에 따른 램프는, 배선기판, 상기 배선기판 위에 일 방향을 따라 형성되는 버스 전극, 상기 배선기판 위에 형성되며, 상기 버스 전극으로부터 연장되어 형성되며 일 끝단을 구비하는 복수의 전극라인들, 상기 전극라인들이 형성되는 방향을 따라 나란하게 배치되고, 인접한 전극라인과 소정 간격을 두고 배치되는 복수의 반도체 발광소자들, 상기 전극라인들과 상기 반도체 발광소자들을 전기적으로 연결시키는 복수의 투명전극들, 상기 버스 전극과 나란하게 상기 일 방향을 따라 형성되는 전류 주입부 및 상기 버스 전극 및 전류 주입부 사이에 상기 일 방향을 따라 이격 배치되며, 상기 버스 전극 및 전류 주입부를 전기적으로 연결시키는 복수의 연결 전극들을 포함하고, 상기 연결 전극들 중 일부의 저항값은 나머지의 저항값과 다른 것을 특징으로 하는 램프를 제공한다. | |||
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15 | US2020291779A1 |
COMPRESSOR
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Publication/Patent Number: US2020291779A1 | Publication Date: 2020-09-17 | Application Number: 16/817,041 | Filing Date: 2020-03-12 | Inventor： Lee kyungho Park, Sangbaek Kim, Cheolhwan | Assignee: LG Electronics Inc. | IPC: F01C17/06 | Abstract: Disclosed is a scroll type compressor having an Oldham's ring having an asymmetrical structure with respect to a long or minor axis thereof. | |||
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16 | US10658411B2 |
Image sensors including shifted isolation structures
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Publication/Patent Number: US10658411B2 | Publication Date: 2020-05-19 | Application Number: 16/275,405 | Filing Date: 2019-02-14 | Inventor： Pyo, Junghyung Kim, Bumsuk Lee kyungho | Assignee: Samsung Electronics Co., Ltd. | IPC: H01L27/146 | Abstract: Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region. |
