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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
1 EP3033834B1
SWITCHED-CAPACITOR LOOP FILTER
Publication/Patent Number: EP3033834B1 Publication Date: 2020-02-05 Application Number: 15790809.6 Filing Date: 2015-07-31 Inventor: Liang, Che-fu   Assignee: MediaTek Inc.   IPC: H03L7/093
2 EP3404717B1
HIGH-SPEED LIGHT SENSING APPARATUS
Publication/Patent Number: EP3404717B1 Publication Date: 2020-01-08 Application Number: 18176031.5 Filing Date: 2016-11-04 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146
3 EP3621113A1
HIGH-SPEED LIGHT SENSING APPARATUS
Publication/Patent Number: EP3621113A1 Publication Date: 2020-03-11 Application Number: 19203472.6 Filing Date: 2016-11-04 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146 Abstract: An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal. An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches ...More Less
4 US10656253B2
High-speed light sensing apparatus
Publication/Patent Number: US10656253B2 Publication Date: 2020-05-19 Application Number: 16/430,019 Filing Date: 2019-06-03 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal. An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches ...More Less
5 EP3370258B1
GERMANIUM-SILICON LIGHT SENSING APPARATUS
Publication/Patent Number: EP3370258B1 Publication Date: 2020-03-25 Application Number: 18160200.4 Filing Date: 2016-08-04 Inventor: Liu, Han-din   Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Chen, Hui-wen   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146
6 EP3370259B1
GERMANIUM-SILICON LIGHT SENSING APPARATUS
Publication/Patent Number: EP3370259B1 Publication Date: 2020-03-11 Application Number: 18160205.3 Filing Date: 2016-08-04 Inventor: Liu, Han-din   Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Chen, Hui-wen   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146
7 US2020192032A1
PHOTO-DETECTING APPARATUS WITH MULTI-RESET MECHANISM CROSS-REFERENCE TO RELATED APPLICATIONS
Publication/Patent Number: US2020192032A1 Publication Date: 2020-06-18 Application Number: 16/705,240 Filing Date: 2019-12-06 Inventor: Na, Yun-chung   Liang, Che-fu   Chen, Chien-lung   Lyu, Yuan-fu   Lu, Yen-cheng   Assignee: Artilux, Inc.   IPC: G02B6/35 Abstract: A photo-detecting apparatus includes an optical-to-electric converter, having a first output terminal, configured to convert an incident light to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal and a second channel terminal, wherein the second channel terminal of the cascode transistor is coupled to the first output terminal of the optical-to-electric converter; and a reset transistor, having a control terminal, a first channel terminal and a second channel terminal, wherein the first channel terminal of the reset transistor is coupled to a supply voltage and the second channel terminal of the reset transistor is coupled to the first channel terminal of the cascode transistor. A photo-detecting apparatus includes an optical-to-electric converter, having a first output terminal, configured to convert an incident light to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal and a second channel terminal ...More Less
8 EP3667727A1
PHOTO-DETECTING APPARATUS WITH MULTI-RESET MECHANISM
Publication/Patent Number: EP3667727A1 Publication Date: 2020-06-17 Application Number: 19215415.1 Filing Date: 2019-12-11 Inventor: Na, Yun-chung   Liang, Che-fu   Chen, Chien-lung   Lyu, Yuan-fu   Lu, Yen-cheng   Assignee: Artilux Inc.   IPC: H01L27/144 Abstract: A photo-detecting apparatus (100A) includes an optical-to-electric converter (170), having a first output terminal, configured to convert an incident light (IL) to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal (120A) and a second channel terminal, wherein the second channel terminal of the cascode transistor is coupled to the first output terminal of the optical-to-electric converter (170); and a reset transistor (141A), having a control terminal, a first channel terminal and a second channel terminal, wherein the first channel terminal of the reset transistor (141A) is coupled to a supply voltage (VDDR) and the second channel terminal of the reset transistor (141A) is coupled to the first channel terminal of the cascode transistor. A photo-detecting apparatus (100A) includes an optical-to-electric converter (170), having a first output terminal, configured to convert an incident light (IL) to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal (120A) and a second ...More Less
9 US10685994B2
Germanium-silicon light sensing apparatus
Publication/Patent Number: US10685994B2 Publication Date: 2020-06-16 Application Number: 15/982,559 Filing Date: 2018-05-17 Inventor: Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Liu, Han-din   Chen, Hui-wen   Liang, Che-fu   Assignee: ARTILUX, INC.   IPC: H01L27/146 Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer. A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for ...More Less
10 US10707260B2
Circuit for operating a multi-gate VIS/IR photodiode
Publication/Patent Number: US10707260B2 Publication Date: 2020-07-07 Application Number: 15/952,088 Filing Date: 2018-04-12 Inventor: Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Liu, Han-din   Chen, Hui-wen   Liang, Che-fu   Lyu, Yuan-fu   Chen, Chien-lung   Lin, Chung-chih   Chu, Kuan-chen   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit. A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the ...More Less
11 US10622390B2
High-speed light sensing apparatus II
Publication/Patent Number: US10622390B2 Publication Date: 2020-04-14 Application Number: 15/908,447 Filing Date: 2018-02-28 Inventor: Na, Yun-chung   Liang, Che-fu   Cheng, Szu-lin   Chen, Shu-lu   Chu, Kuan-chen   Lin, Chung-chih   Liu, Han-din   Assignee: Artilux, Inc.   IPC: G01C3/08 Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal. An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a ...More Less
12 EP3590136A1
HIGH-SPEED LIGHT SENSING APPARATUS II
Publication/Patent Number: EP3590136A1 Publication Date: 2020-01-08 Application Number: 18761724.6 Filing Date: 2018-02-28 Inventor: Na, Yun-chung   Liang, Che-fu   Cheng, Szu-lin   Chen, Shu-lu   Chu, Kuan-chen   Lin, Chung-chih   Liu, Han-din   Assignee: Artilux Inc.   IPC: H01L27/146
13 US2020052016A1
HIGH-SPEED LIGHT SENSING APPARATUS II
Publication/Patent Number: US2020052016A1 Publication Date: 2020-02-13 Application Number: 16/656,963 Filing Date: 2019-10-18 Inventor: Na, Yun-chung   Liang, Che-fu   Cheng, Szu-lin   Chen, Shu-lu   Chu, Kuan-chen   Lin, Chung-chih   Liu, Han-din   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal. An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a ...More Less
14 EP3610510A1
GERMANIUM-SILICON LIGHT SENSING APPARATUS II
Publication/Patent Number: EP3610510A1 Publication Date: 2020-02-19 Application Number: 18783894.1 Filing Date: 2018-04-12 Inventor: Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Liu, Han-din   Chen, Hui-wen   Liang, Che-fu   Lyu, Yuan-fu   Chen, Chien-lung   Lin, Chung-chih   Chu, Kuan-chen   Assignee: Artilux Inc.   IPC: H01L27/146
15 US2020161364A1
GERMANIUM-SILICON LIGHT SENSING APPARATUS II
Publication/Patent Number: US2020161364A1 Publication Date: 2020-05-21 Application Number: 16/752,194 Filing Date: 2020-01-24 Inventor: Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Liu, Han-din   Chen, Hui-wen   Liang, Che-fu   Lyu, Yuan-fu   Chen, Chien-lung   Lin, Chung-chih   Chu, Kuan-chen   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit. A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the ...More Less