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1 | US10784300B1 |
Solid-state imaging devices
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Publication/Patent Number: US10784300B1 | Publication Date: 2020-09-22 | Application Number: 16/385,463 | Filing Date: 2019-04-16 | Inventor： Lin chi han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: H01L27/146 | Abstract: The solid-state imaging device includes a first set of units disposed in a substrate and including a first pixel unit, a second pixel unit and a third pixel unit. The first pixel unit, the second pixel unit and the third pixel unit are sequentially arranged and include respective photoelectric conversion elements. The solid-state imaging device also includes a metal grid structure disposed over the first set of units and including a first portion and a second portion. The first portion is disposed between the first pixel unit and the second pixel unit and has a first width. The second portion is disposed between the second pixel unit and the third pixel unit and has a second width that is greater than the first width. | |||
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2 | US10566365B2 |
Image sensor
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Publication/Patent Number: US10566365B2 | Publication Date: 2020-02-18 | Application Number: 14/722,730 | Filing Date: 2015-05-27 | Inventor： Chen, Li-wei Lin chi han Tu, Zong-ru | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: H01L27/146 | Abstract: An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses. | |||
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3 | US10675657B2 |
Optical elements and method for fabricating the same
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Publication/Patent Number: US10675657B2 | Publication Date: 2020-06-09 | Application Number: 16/031,277 | Filing Date: 2018-07-10 | Inventor： Cheng, Sheng-chuan Chen, Huang-jen Lin chi han Wu, Han-lin | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: B05D3/10 | Abstract: A method for fabricating an optical element is provided. The fabrication method includes the following steps. A substrate is provided. A plurality of metal grids are formed on the substrate. A first organic layer is formed on the substrate between the plurality of metal grids. A second organic layer is formed on the first organic layer and the plurality of metal grids. The second organic layer and the first organic layer are etched to leave the plurality of metal grids and a plurality of patterned second organic layers on the plurality of metal grids. An optical element fabricated by the method is also provided. | |||
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4 | US2020254485A1 |
OPTICAL ELEMENTS
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Publication/Patent Number: US2020254485A1 | Publication Date: 2020-08-13 | Application Number: 16/863,196 | Filing Date: 2020-04-30 | Inventor： Cheng, Sheng-chuan Chen, Huang-jen Lin chi han Wu, Han-lin | Assignee: VisEra Technologies Company Limited | IPC: B05D5/06 | Abstract: An optical element is provided. The optical element includes a substrate; a plurality of metal grids formed on the substrate; an oxide layer formed on the substrate between the plurality of metal grids; and a plurality of organic layers formed on the plurality of metal grids, wherein the width of the organic layer is greater than the width of the metal grid, and there is at least one gap between the organic layer and the oxide layer. | |||
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5 | US2020016628A1 |
OPTICAL ELEMENTS AND METHOD FOR FABRICATING THE SAME
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Publication/Patent Number: US2020016628A1 | Publication Date: 2020-01-16 | Application Number: 16/031,277 | Filing Date: 2018-07-10 | Inventor： Cheng, Sheng-chuan Chen, Huang-jen Lin chi han Wu, Han-lin | Assignee: VisEra Technologies Company Limited | IPC: B05D5/06 | Abstract: A method for fabricating an optical element is provided. The fabrication method includes the following steps. A substrate is provided. A plurality of metal grids are formed on the substrate. A first organic layer is formed on the substrate between the plurality of metal grids. A second organic layer is formed on the first organic layer and the plurality of metal grids. The second organic layer and the first organic layer are etched to leave the plurality of metal grids and a plurality of patterned second organic layers on the plurality of metal grids. An optical element fabricated by the method is also provided. | |||
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6 | US2020108573A1 |
OPTICAL ELEMENTS AND METHOD FOR FABRICATING THE SAME
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Publication/Patent Number: US2020108573A1 | Publication Date: 2020-04-09 | Application Number: 16/150,804 | Filing Date: 2018-10-03 | Inventor： Cheng, Sheng-chuan Chen, Hao-min Lin chi han Wu, Han-lin | Assignee: VisEra Technologies Company Limited | IPC: B29D11/00 | Abstract: A method for fabricating an optical element is provided. A substrate is provided. A plurality of metal grids are formed on the substrate. An organic layer is formed on the substrate and the metal grids. The organic layer is etched to form a first patterned organic layer including a plurality of first protrusion portions and a plurality of first trenches surrounded by the first protrusion portions. The first patterned organic layer is etched to form a second patterned organic layer including a plurality of second protrusion portions and a plurality of second trenches surrounded by the second protrusion portions. Each second protrusion portion covers one metal grid. There is a distance between the center axis of one second protrusion portion of the second patterned organic layer and the center axis of one metal grid covered by the one second protrusion portion of the second patterned organic layer. | |||
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7 | US10850462B2 |
Optical elements and method for fabricating the same
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Publication/Patent Number: US10850462B2 | Publication Date: 2020-12-01 | Application Number: 16/150,804 | Filing Date: 2018-10-03 | Inventor： Cheng, Sheng-chuan Chen, Hao-min Lin chi han Wu, Han-lin | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: G02B3/00 | Abstract: A method for fabricating an optical element is provided. A substrate is provided. A plurality of metal grids are formed on the substrate. An organic layer is formed on the substrate and the metal grids. The organic layer is etched to form a first patterned organic layer including a plurality of first protrusion portions and a plurality of first trenches surrounded by the first protrusion portions. The first patterned organic layer is etched to form a second patterned organic layer including a plurality of second protrusion portions and a plurality of second trenches surrounded by the second protrusion portions. Each second protrusion portion covers one metal grid. There is a distance between the center axis of one second protrusion portion of the second patterned organic layer and the center axis of one metal grid covered by the one second protrusion portion of the second patterned organic layer. | |||
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8 | US202016628A1 |
OPTICAL ELEMENTS AND METHOD FOR FABRICATING THE SAME
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Publication/Patent Number: US202016628A1 | Publication Date: 2020-01-16 | Application Number: 20/181,603 | Filing Date: 2018-07-10 | Inventor： Lin chi han Chen, Huang-jen Wu, Han-lin Cheng, Sheng-chuan | Assignee: VisEra Technologies Company Limited | IPC: B05D7/14 | Abstract: A method for fabricating an optical element is provided. The fabrication method includes the following steps. A substrate is provided. A plurality of metal grids are formed on the substrate. A first organic layer is formed on the substrate between the plurality of metal grids. A second organic layer is formed on the first organic layer and the plurality of metal grids. The second organic layer and the first organic layer are etched to leave the plurality of metal grids and a plurality of patterned second organic layers on the plurality of metal grids. An optical element fabricated by the method is also provided. | |||
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9 | US10462431B2 |
Image sensors
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Publication/Patent Number: US10462431B2 | Publication Date: 2019-10-29 | Application Number: 14/683,792 | Filing Date: 2015-04-10 | Inventor： Huang, Tzu-wei Lin chi han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: H01L27/146 | Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter array is disposed above the semiconductor substrate. The color filter array includes a first color filter, a second color filter and a third color filter. The image sensor further includes an isolated partition disposed in the color filter array to surround one of the first, second and third color filters. The isolated partition has a refractive index that is lower than the refractive indexes of the first, second and third color filters. | |||
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10 | US10170511B1 |
Solid-state imaging devices having a microlens layer with dummy structures
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Publication/Patent Number: US10170511B1 | Publication Date: 2019-01-01 | Application Number: 15/616,390 | Filing Date: 2017-06-07 | Inventor： Huang, Tzu-wei Lin chi han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: H04N5/335 | Abstract: A solid-state imaging device has a sensing region, a pad region and a peripheral region between the sensing region and the pad region. The solid-state imaging device includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and disposed in the sensing region, and a bond pad disposed on the semiconductor substrate and in the pad region. The solid-state imaging device further includes a microlens layer disposed above the semiconductor substrate. The microlens layer includes a microlens array in the sensing region and a first dummy structure in the pad region. The first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad. Moreover, the solid-state imaging device includes a passivation film conformally formed on a top surface of the microlens layer. | |||
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11 | TW201904041A |
Solid-state imaging devices
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Publication/Patent Number: TW201904041A | Publication Date: 2019-01-16 | Application Number: 106138299 | Filing Date: 2017-11-06 | Inventor： Huang, Tzu-wei Lin chi han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: G02B3/00 | Abstract: A solid-state imaging device has a sensing region, a pad region and a peripheral region between the sensing region and the pad region. The solid-state imaging device includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and disposed in the sensing region, and a bond pad disposed on the semiconductor substrate and in the pad region. The solid-state imaging device further includes a microlens layer disposed above the semiconductor substrate. The microlens layer includes a microlens array in the sensing region and a first dummy structure in the pad region. The first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad. Moreover, the solid-state imaging device includes a passivation film conformally formed on a top surface of the microlens layer. | |||
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12 | US2018358396A1 |
SOLID-STATE IMAGING DEVICES HAVING A MICROLENS LAYER WITH DUMMY STRUCTURES
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Publication/Patent Number: US2018358396A1 | Publication Date: 2018-12-13 | Application Number: 15/616,390 | Filing Date: 2017-06-07 | Inventor： Huang, Tzu-wei Lin chi han | Assignee: VisEra Technologies Company Limited | IPC: H01L27/146 | Abstract: A solid-state imaging device has a sensing region, a pad region and a peripheral region between the sensing region and the pad region. The solid-state imaging device includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and disposed in the sensing region, and a bond pad disposed on the semiconductor substrate and in the pad region. The solid-state imaging device further includes a microlens layer disposed above the semiconductor substrate. The microlens layer includes a microlens array in the sensing region and a first dummy structure in the pad region. The first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad. Moreover, the solid-state imaging device includes a passivation film conformally formed on a top surface of the microlens layer. | |||
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13 | JP2018207086A |
SOLID-STATE IMAGING ELEMENT INCLUDING MICROLENS LAYER WITH DUMMY STRUCTURE
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Publication/Patent Number: JP2018207086A | Publication Date: 2018-12-27 | Application Number: 2017157805 | Filing Date: 2017-08-18 | Inventor： Lin chi han Huang, Tzu-wei | Assignee: VISERA TECHNOLOGIES COMPANY LTD | IPC: H04N5/335 | Abstract: To provide a solid-state imaging element including a microlens layer with a dummy structure.SOLUTION: A solid-state imaging element comprises a sensing region, a pad region, and a peripheral region arranged between the sensing region and the pad region. The solid-state imaging element includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and arranged in the sensing region, and a bond pad arranged on the semiconductor substrate and in the pad region. The solid-state imaging element further includes a microlens layer arranged on the semiconductor substrate. The microlens layer includes a microlens array arranged in the sensing region and a first dummy structure arranged in the pad region. The first dummy structure includes a plurality of first microlens elements arranged so as to surround a bond pad region. Moreover, the solid-state imaging element includes a protection film conformally formed on an upper surface of the microlens layer.SELECTED DRAWING: Figure 1 | |||
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14 | TWI629776B |
Solid-state imaging devices
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Publication/Patent Number: TWI629776B | Publication Date: 2018-07-11 | Application Number: 106138299 | Filing Date: 2017-11-06 | Inventor： Huang, Tzu-wei Lin chi han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: G02B3/00 | Abstract: A solid-state imaging device has a sensing region, a pad region and a peripheral region between the sensing region and the pad region. The solid-state imaging device includes a plurality of photoelectric conversion elements formed in a semiconductor substrate and disposed in the sensing region, and a bond pad disposed on the semiconductor substrate and in the pad region. The solid-state imaging device further includes a microlens layer disposed above the semiconductor substrate. The microlens layer includes a microlens array in the sensing region and a first dummy structure in the pad region. The first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad. Moreover, the solid-state imaging device includes a passivation film conformally formed on a top surface of the microlens layer. | |||
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15 | TW201712855A |
Solid-state imaging devices
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Publication/Patent Number: TW201712855A | Publication Date: 2017-04-01 | Application Number: 105103239 | Filing Date: 2016-02-02 | Inventor： Chang, Chih Chieh Lin, Chi Han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: H01L27/146 | Abstract: A solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements arranged into a pixel array. A color filter layer including a plurality of color filter segments is disposed above the photoelectric conversion elements. A partition grid includes a plurality of partitions | |||
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16 | TWI595784B |
Image sensors
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Publication/Patent Number: TWI595784B | Publication Date: 2017-08-11 | Application Number: 104132796 | Filing Date: 2015-10-06 | Inventor： Huang, Tzu Wei Lin, Chi Han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: H04N5/335 | Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter array is disposed above the semiconductor substrate. The color filter array includes a first color filter | |||
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17 | TWI591811B |
Solid-state imaging devices
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Publication/Patent Number: TWI591811B | Publication Date: 2017-07-11 | Application Number: 105103239 | Filing Date: 2016-02-02 | Inventor： Chang, Chih Chieh Lin, Chi Han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: H01L27/146 | Abstract: A solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements arranged into a pixel array. A color filter layer including a plurality of color filter segments is disposed above the photoelectric conversion elements. A partition grid includes a plurality of partitions | |||
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18 | TWI567961B |
IMAGE SENSOR
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Publication/Patent Number: TWI567961B | Publication Date: 2017-01-21 | Application Number: 104138011 | Filing Date: 2015-11-18 | Inventor： Chen, Li Wei Tu, Zong Ru Lin, Chi Han | Assignee: VISERA TECHNOLOGIES COMPANY LIMITED | IPC: H01L27/146 | Abstract: An image sensor includes a sensing layer | |||
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19 | JP6242022B2 |
IMAGE SENSOR
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Publication/Patent Number: JP6242022B2 | Publication Date: 2017-12-06 | Application Number: 2015182771 | Filing Date: 2015-09-16 | Inventor： Huang, Tzu-wei Lin chi han | Assignee: VISERA TECHNOLOGIES COMPANY LTD | IPC: G02B5/20 | Abstract: PROBLEM TO BE SOLVED: To provide an image sensor which is improved in quantum efficiency of a pixel and suitable for high dynamic range application.SOLUTION: An image sensor comprises: a semiconductor substrate including a plurality of photoelectric conversion elements; a color filter array which is arranged on the semiconductor substrate and includes a first color filter 113-1 | |||
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20 | US9634049B2 |
Solid-state imaging devices with enhanced angular response
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Publication/Patent Number: US9634049B2 | Publication Date: 2017-04-25 | Application Number: 14/861,378 | Filing Date: 2015-09-22 | Inventor： Chang, Chih-chieh Lin chi han | Assignee: Visera Technologies Company Limited | IPC: H01L27/146 | Abstract: A solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements arranged into a pixel array. A color filter layer including a plurality of color filter segments is disposed above the photoelectric conversion elements. A partition grid includes a plurality of partitions, and each of the partitions is disposed between two adjacent color filter segments. The color filter layer and the partition grid are disposed in the same layer. In addition, the partitions include a first partition disposed at a center line of the pixel array and a second partition disposed at an edge of the pixel array. The second partition has a top width that is larger than the top width of the first partition. |
3.Current Quota