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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
US9659886B2
Method of fabricating semiconductor device having voids between top metal layers of metal interconnects
Publication/Patent Number: US9659886B2 Publication Date: 2017-05-23 Application Number: 15/193,117 Filing Date: 2016-06-27 Inventor: Lin chung hsin   Wu, Ping-heng   Lay, Chao-wen   Wu, Hung-mo   Chuang, Ying-cheng   Assignee: NANYA TECHNOLOGY CORPORATION   IPC: H01L23/528 Abstract: The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof. The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
2
TWI532136B
Semiconductor device and method of fabricating the same
Publication/Patent Number: TWI532136B Publication Date: 2016-05-01 Application Number: 102142675 Filing Date: 2013-11-22 Inventor: Wu, Hung Mo   Chuang, Ying Cheng   Wu, Ping Heng   Lay, Chao Wen   Lin, Chung Hsin   Assignee: Nanya Technology Corporation   IPC: H01L21/60 Abstract: The invention provides a semiconductor device including a substrate
3
US2016307859A1
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Publication/Patent Number: US2016307859A1 Publication Date: 2016-10-20 Application Number: 15/193,117 Filing Date: 2016-06-27 Inventor: Lin chung hsin   Wu, Ping-heng   Lay, Chao-wen   Wu, Hung-mo   Chuang, Ying-cheng   Assignee: NANYA TECHNOLOGY CORPORATION   IPC: H01L23/00 Abstract: The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof. The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
4
US9418949B2
Semiconductor device having voids between top metal layers of metal interconnects
Publication/Patent Number: US9418949B2 Publication Date: 2016-08-16 Application Number: 14/028,554 Filing Date: 2013-09-17 Inventor: Lin chung hsin   Wu, Ping-heng   Lay, Chao-wen   Wu, Hung-mo   Chuang, Ying-cheng   Assignee: NANYA TECHNOLOGY CORPORATION   IPC: H01L23/528 Abstract: The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof. The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
5
TW201513284A
Semiconductor device and method of fabricating the same
Publication/Patent Number: TW201513284A Publication Date: 2015-04-01 Application Number: 102142675 Filing Date: 2013-11-22 Inventor: Wu, Hung Mo   Chuang, Ying Cheng   Wu, Ping Heng   Lay, Chao Wen   Lin, Chung Hsin   Assignee: Nanya Technology Corporation   IPC: H01L21/60 Abstract: The invention provides a semiconductor device including a substrate
6
US2015076698A1
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Publication/Patent Number: US2015076698A1 Publication Date: 2015-03-19 Application Number: 14/028,554 Filing Date: 2013-09-17 Inventor: Lin chung hsin   Wu, Ping-heng   Lay, Chao-wen   Wu, Hung-mo   Chuang, Ying-cheng   Assignee: NANYA TECHNOLOGY CORPORATION   IPC: H01L23/00 Abstract: The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
7
TWI425659B
Light-emitting diode device
Publication/Patent Number: TWI425659B Publication Date: 2014-02-01 Application Number: 99123426 Filing Date: 2010-07-16 Inventor: Lu, Tsung Hung   Chiang, Tsung Ju   Lin, Chung Hsin   Wang, Chien Jen   Assignee: CHI MEI LIGHTING TECHNOLOGY CORPORATION   IPC: H01L33/00 Abstract: A light-emitting diode (LED) device includes a substrate and an epitaxial layer. The substrate has a first face and a second face disposed oppositely
8
TW201409738A
Manufacturing method of LED
Publication/Patent Number: TW201409738A Publication Date: 2014-03-01 Application Number: 101129805 Filing Date: 2012-08-16 Inventor: Lin chung hsin   Wu, Chi-lung   Chu, Chang-hsin   Chang, Jui-chun   Chiou, Shin-jia   Assignee: CHI MEI LIGHTING TECHNOLOGY CORPORATION   IPC: H01L33/02 Abstract: A manufacturing method of LED (light emitting diode) includes the steps of forming an epitaxial structure on an epitaxial substrate
9
TW201324843A
Manufacturing method of LED
Publication/Patent Number: TW201324843A Publication Date: 2013-06-16 Application Number: 100145605 Filing Date: 2011-12-09 Inventor: Lin chung hsin   Assignee: CHI MEI LIGHTING TECHNOLOGY CORPORATION   IPC: H01L33/02 Abstract: A manufacturing method of LED (light emitting diode) includes the steps of forming an epitaxial structure on a first side of an epitaxial substrate
10
US2013092955A1
LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF
Publication/Patent Number: US2013092955A1 Publication Date: 2013-04-18 Application Number: 13/403,734 Filing Date: 2012-02-23 Inventor: Chiou, Shin-jia   Lin, Chung Hsin   Wu, Chi-lung   Chang, Jui-chun   Assignee: CHI MEI LIGHTING TECHNOLOGY CORP.   IPC: H01L33/06 Abstract: A light-emitting diode (LED) and fabricating method thereof. The method includes: providing a first substrate and forming an epitaxial portion on the first substrate; forming at least one reflection layer on the epitaxial portion; forming a metal barrier portion on the reflection layer; etching the epitaxial portion and the barrier portion by a first etching process, so as to form a plurality of epitaxial layers and a plurality of metal barrier layers, an etch channel is formed between adjacent epitaxial layers, and each metal barrier layer enwraps a corresponding reflection layer and covers all of a surface of a corresponding epitaxial layer; forming a first bonding layer on the metal barrier layer; and forming a second substrate on the first bonding layer and removing the first substrate.
11
TW201318215A
Light emitting diode and fabricating method thereof
Publication/Patent Number: TW201318215A Publication Date: 2013-05-01 Application Number: 100137779 Filing Date: 2011-10-18 Inventor: Lin chung hsin   Wu, Chi-lung   Chang, Jui-chun   Chiou, Shin-jia   Assignee: CHI MEI LIGHTING TECHNOLOGY CORP.   IPC: H01L33/44 Abstract: The present invention relates to a light-emitting diode (LED) and fabricating method thereof. The method comprises: providing a first substrate and forming an epitaxy part on the first substrate; forming at least one reflection layer on the epitaxy part; forming a metal barrier part on the reflection layer; using an etching process to etch the epitaxy part and the barrier part so as to form at least one epitaxy layer and at least one metal barrier layer
12
TW201324839A
Light-emitting diode device
Publication/Patent Number: TW201324839A Publication Date: 2013-06-16 Application Number: 100145606 Filing Date: 2011-12-09 Inventor: Lin chung hsin   Wu, Chi-lung   Chu, Chang-hsin   Chang, Jui-chun   Chiou, Shin-jia   Assignee: CHI MEI LIGHTING TECHNOLOGY CORPORATION   IPC: H01L33/00 Abstract: A light-emitting diode device includes a substrate
13
US2013146934A1
LIGHT-EMITTING DIODE DEVICE
Publication/Patent Number: US2013146934A1 Publication Date: 2013-06-13 Application Number: 13/710,142 Filing Date: 2012-12-10 Inventor: Lin chung hsin   Chiou, Shin-jia   Wu, Chi-lung   Chang, Jui-chun   Chu, Chang-shin   Assignee: Chi Mei Lighting Technology Corp.   IPC: H01L33/38 Abstract: A light-emitting diode device includes a substrate, an epitaxial layer and a first electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed on the epitaxial layer and includes a connecting portion and a conductive finger. The conductive finger has a first end and a second end, and the first end is connected to the connecting portion. At least one portion of the conductive finger is tapered along an extending direction of the conductive finger.
14
TWM423975U
Driving circuit of light emitting diode series
Publication/Patent Number: TWM423975U Publication Date: 2012-03-01 Application Number: 100209206 Filing Date: 2011-05-23 Inventor: Lin chung hsin   Tang, Chung-heng   Assignee: Darfon Electronics Corp.   IPC: H05B33/08 Abstract: A driving circuit of light emitting diode series includes a switching power supply circuit
15
TW201205855A
Light-emitting diode device
Publication/Patent Number: TW201205855A Publication Date: 2012-02-01 Application Number: 99123426 Filing Date: 2010-07-16 Inventor: Lu, Tsung Hung   Chiang, Tsung Ju   Lin, Chung Hsin   Wang, Chien Jen   Assignee: CHI MEI LIGHTING TECHNOLOGY CORPORATION   IPC: H01L33/00 Abstract: A light-emitting diode (LED) device includes a substrate and an epitaxial layer. The substrate has a first face and a second face disposed oppositely
16
US2012305959A1
LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US2012305959A1 Publication Date: 2012-12-06 Application Number: 13/241,667 Filing Date: 2011-09-23 Inventor: Yu, Kuo-hui   Chu, Chang-hsin   Wu, Chi-lung   Chiou, Shin-jia   Lin chung hsin   Chang, Jui-chun   Assignee: CHI MEI LIGHTING TECHNOLOGY CORP.   IPC: H01L33/58 Abstract: A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.
17
TW201248945A
Light-emitting diode device and method for manufacturing the same
Publication/Patent Number: TW201248945A Publication Date: 2012-12-01 Application Number: 100119074 Filing Date: 2011-05-31 Inventor: Yu, Kuo-hui   Lin chung hsin   Wu, Chi-lung   Chu, Chang-hsin   Chang, Jui-chun   Chiou, Shin-jia   Assignee: CHI MEI LIGHTING TECHNOLOGY CORP.   IPC: H01L33/02 Abstract: A light-emitting diode device and a method for manufacturing the same are described. The light-emitting diode device includes a substrate
18
TWM414032U
Power supply with multiple outputs
Publication/Patent Number: TWM414032U Publication Date: 2011-10-11 Application Number: 100209204 Filing Date: 2011-05-23 Inventor: Lin chung hsin   Tang, Chung-heng   Assignee: Darfon Electronics Corp.   IPC: H02M7/12 Abstract: A power supply includes a switching power supply circuit
19
DE102006019424B4
Herstellungsverfahren für eine integrierte Halbleiterkontaktstruktur mit einer verbesserten Aluminiumfüllung
Title (English): Using improved calcium carbonate filling method to realize the production process of integrated semiconductor contact structure
Publication/Patent Number: DE102006019424B4 Publication Date: 2011-06-22 Application Number: 102006019424 Filing Date: 2006-04-26 Inventor: Weber, Detlef   Hahn, Jens   Richter, Tom   Lin chung hsin   Assignee: Nanya Technology Corporation   Qimonda AG   IPC: C23C14/34 Abstract: Herstellungsverfahren für eine integrierte Halbleiterkontaktstruktur mit folgenden Schritten: Bilden von Kontaktlöchern in einer Isolationsschicht
20
TWM335707U
Multi-lamp driving circuit
Publication/Patent Number: TWM335707U Publication Date: 2008-07-01 Application Number: 97201111 Filing Date: 2008-01-18 Inventor: Lin chung hsin   Ku, Pi-kuang   Assignee: Darfon Electronics Corp.   IPC: G02F1/1335 Abstract: The invention discloses a multi-lamp driving circuit
Total 2 pages