Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
US2020294807A1
SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HYDROGEN GAS CONTROL
Publication/Patent Number: US2020294807A1 Publication Date: 2020-09-17 Application Number: 16/887,218 Filing Date: 2020-05-29 Inventor: Chang, Cheng-wei   Lin kao feng   Hung, Min-hsiu   Chao, Yi-hsiang   Huang, Huang-yi   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/285 Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.
2
US10685842B2
Selective formation of titanium silicide and titanium nitride by hydrogen gas control
Publication/Patent Number: US10685842B2 Publication Date: 2020-06-16 Application Number: 15/983,216 Filing Date: 2018-05-18 Inventor: Chang, Cheng-wei   Lin kao feng   Hung, Min-hsiu   Chao, Yi-hsiang   Huang, Huang-yi   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/285 Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.
3
US2019355585A1
SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HYDROGEN GAS CONTROL
Publication/Patent Number: US2019355585A1 Publication Date: 2019-11-21 Application Number: 15/983,216 Filing Date: 2018-05-18 Inventor: Chang, Cheng-wei   Lin kao feng   Hung, Min-hsiu   Chao, Yi-hsiang   Huang, Huang-yi   Lin, Yu-ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/285 Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.
4
US9580814B2
Chemical conversion coating and method of fabricating the same
Publication/Patent Number: US9580814B2 Publication Date: 2017-02-28 Application Number: 14/197,231 Filing Date: 2014-03-05 Inventor: Jian, Shun-yi   Lin kao feng   Chu, Yu-ren   Lin, Chao-sung   Assignee: National Taiwan University   IPC: C23C22/18 Abstract: A chemical conversion coating is provided. The chemical conversion coating is disposed on a surface of a magnesium alloy substrate. The chemical conversion coating includes a first protecting layer. The first protecting layer contains manganese, magnesium and oxygen, and a manganese content of the first protecting layer is between 10 at. % to 20 at. %.
5
TW201527594A
Chemical conversion coating and method of fabricating the same
Publication/Patent Number: TW201527594A Publication Date: 2015-07-16 Application Number: 103100417 Filing Date: 2014-01-06 Inventor: Lin, Chao-sung   Chu, Yu-ren   Jian, Shun-yi   Lin kao feng   Assignee: National Taiwan University   IPC: C23C22/57 Abstract: A chemical conversion coating is provided. The chemical conversion coating is disposed on a surface of a magnesium alloy substrate. The chemical conversion coating includes a first protecting layer. The first protecting layer contains manganese
6
US2015191826A1
CHEMICAL CONVERSION COATING AND METHOD OF FABRICATING THE SAME
Publication/Patent Number: US2015191826A1 Publication Date: 2015-07-09 Application Number: 14/197,231 Filing Date: 2014-03-05 Inventor: Jian, Shun-yi   Lin kao feng   Chu, Yu-ren   Lin, Chao-sung   Assignee: National Taiwan University   IPC: C23C22/57 Abstract: A chemical conversion coating is provided. The chemical conversion coating is disposed on a surface of a magnesium alloy substrate. The chemical conversion coating includes a first protecting layer. The first protecting layer contains manganese, magnesium and oxygen, and a manganese content of the first protecting layer is between 10 at. % to 20 at. %.
7
TWI487809B
Chemical conversion coating and method of fabricating the same
Publication/Patent Number: TWI487809B Publication Date: 2015-06-11 Application Number: 103100417 Filing Date: 2014-01-06 Inventor: Lin, Chao-sung   Chu, Yu-ren   Jian, Shun-yi   Lin kao feng   Assignee: National Taiwan University   IPC: C23C22/57 Abstract: A chemical conversion coating is provided. The chemical conversion coating is disposed on a surface of a magnesium alloy substrate. The chemical conversion coating includes a first protecting layer. The first protecting layer contains manganese