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1
US2020098806A1
IMAGE-SENSOR PACKAGE AND ASSOCIATED METHOD
Publication/Patent Number: US2020098806A1 Publication Date: 2020-03-26 Application Number: 16/139,019 Filing Date: 2018-09-22 Inventor: Lin wei feng   Fan, Chun-sheng   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image-sensor package includes a cover glass, an image sensor, and an integrated circuit. The cover glass has a cover-glass bottom surface, to which the image sensor is bonded. The integrated circuit is beneath the cover-glass bottom surface, adjacent to the image sensor, and electronically connected to the image sensor. A method for packaging an image sensor includes attaching an image sensor to a cover-glass bottom surface of a cover glass, a light-sensing region of the image sensor facing the cover-glass bottom surface. The method also includes attaching an integrated circuit to the cover-glass bottom surface, a top IC-surface of the integrated circuit facing the cover-glass bottom surface.
2
US2020395730A1
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Publication/Patent Number: US2020395730A1 Publication Date: 2020-12-17 Application Number: 16/440,031 Filing Date: 2019-06-13 Inventor: Fan, Chun-sheng   Lin wei feng   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01S5/022 Abstract: A semiconductor structure is provided. The semiconductor structure includes: a substrate having a cavity recessed from a top surface of the substrate toward a bottom surface of the substrate opposite to the top surface, wherein the cavity has a sidewall and a bottom surface, and the bottom surface of the cavity is substantially parallel to the top surface of the substrate; a light source structure in the cavity, and the light source structure emitting a light from a sidewall of the light source structure; and a diffractive optical element (DOE) over the top surface of the substrate; wherein the sidewall of the cavity is a sloped surface, so that when the light is incident on the sidewall, the sloped surface reflects the incident light to generate a reflected light toward the DOE. Associated semiconductor structure and manufacturing method are also disclosed.
3
US2020387002A1
DIFFRACTIVE OPTICAL ELEMENTS MADE OF CONDUCTIVE MATERIALS
Publication/Patent Number: US2020387002A1 Publication Date: 2020-12-10 Application Number: 16/430,517 Filing Date: 2019-06-04 Inventor: Fan, Chun-sheng   Lin wei feng   Assignee: OmniVision Technologies, Inc.   IPC: G02B27/09 Abstract: A diffractive optical element (DOE) comprises a first part comprising a first transparent non-conductive base and a first transparent conductive layer disposed on the first transparent non-conductive base and a second part comprising a second transparent non-conductive base and a second transparent conductive layer disposed on the second transparent non-conductive base. The first transparent conductive layer and the second transparent conductive layer have periodical patterns of thickness for diffracting light. Spacers separate the first part and the second part. The first part and the second part are positioned such that the first transparent conductive layer is facing the second transparent conductive layer. A first end of the first transparent conductive layer is electrically connected to a first terminal of a capacitance monitor, and a second end of the second transparent conductive layer is electrically connected to a second terminal of the capacitance monitor. The capacitance monitor constantly monitors the capacitance across the first transparent conductive layer and the second transparent conductive layer during an operation comprising diffracting a laser beam.
4
US2020243384A1
LASER MARKED CODE PATTERN FOR REPRESENTING TRACING NUMBER OF CHIP
Publication/Patent Number: US2020243384A1 Publication Date: 2020-07-30 Application Number: 16/257,223 Filing Date: 2019-01-25 Inventor: Lin wei feng   Huang, Chi-chih   Assignee: OmniVision Technologies, Inc.   IPC: H01L21/768 Abstract: A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern formed using laser marking on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the at least one code pattern is visible from a backside of the chip, the at least one code pattern represents a binary number having four bits; and the binary number represents a decimal number to represent a tracing number of the chip.
5
US2020357842A1
IMAGE SENSOR MODULE HAVING PROTECTIVE STRUCTURE THAT BLOCKS INCIDENT LIGHT TO ARRIVE AT BONDING WIRES AND PADS
Publication/Patent Number: US2020357842A1 Publication Date: 2020-11-12 Application Number: 16/937,759 Filing Date: 2020-07-24 Inventor: Lin wei feng   Huang, Chi-chih   Su, Yu-mei   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor module comprises: a substrate having a first side and second side, the first side being an opposite of the second side, an image sensor attached to the first side of the substrate, bonding wires to bond the image sensor to pads on the first side of the substrate, a protective structure disposed on the first side of the substrate surrounding the image sensor, the bonding wires, and the pads, the protective structure having a dam and a lid, a cover glass disposed on the protective structure, and a set of solder balls attached to the second side of the substrate.
6
US2020227394A1
SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
Publication/Patent Number: US2020227394A1 Publication Date: 2020-07-16 Application Number: 16/248,125 Filing Date: 2019-01-15 Inventor: Yeh, Chien Chan   Kuo, Ying-chih   Lin wei feng   Assignee: Omnivision Technologies, Inc.   IPC: H01L25/16 Abstract: A semiconductor device package includes a transparent substrate, a photo detector and a first conductive layer. The transparent substrate has a first surface and a first cavity underneath the first surface. The photo detector is disposed within the first cavity. The photo detector has a sensing area facing toward a bottom surface of the first cavity of the transparent substrate. The first conductive layer is disposed over the transparent substrate and electrically connected to the photo detector.
7
US10644048B2
Anti-reflective coating with high refractive index material at air interface
Publication/Patent Number: US10644048B2 Publication Date: 2020-05-05 Application Number: 15/421,879 Filing Date: 2017-02-01 Inventor: Fan, Chun-sheng   Tsai, Chen-wei   Lin wei feng   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride.
8
US2020335534A1
ANTI-REFLECTIVE COATING WITH HIGH REFRACTIVE INDEX MATERIAL AT AIR INTERFACE
Publication/Patent Number: US2020335534A1 Publication Date: 2020-10-22 Application Number: 16/816,683 Filing Date: 2020-03-12 Inventor: Fan, Chun-sheng   Tsai, Chen-wei   Lin wei feng   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride.
9
US10868945B2
Light-field camera and method using wafer-level integration process
Publication/Patent Number: US10868945B2 Publication Date: 2020-12-15 Application Number: 16/377,391 Filing Date: 2019-04-08 Inventor: Chen, Teng-sheng   Deng, Jau-jan   Chang, Chia-yang   Lin wei feng   Assignee: OmniVision Technologies, Inc.   IPC: H04N5/225 Abstract: A camera module has light-field camera(s) and high resolution camera(s), the light-field camera(s) have multiple-lens arrays above an image sensor. The light-field camera(s) have a lens element at a same level as a lens element of the high resolution camera, the lens elements bearing apertures. The multiple-lens array of the light-field camera is above the image sensor at a same level as a flat transparent plate of the high resolution camera. The cameras lens cubes are made simultaneously by bonding molded lens plates and spacer plates, the lens plates and spacer plates including an upper lens plate having upper light-field camera lens elements and upper high resolution camera lens elements with applied apertures, multiple spacer plates, a microlens plate bearing an array of microlenses in the light-field cameras, the microlens plate being flat and transparent in areas of the high resolution camera.
10
US2020052019A1
CAVITYLESS CHIP-SCALE IMAGE-SENSOR PACKAGE
Publication/Patent Number: US2020052019A1 Publication Date: 2020-02-13 Application Number: 16/100,835 Filing Date: 2018-08-10 Inventor: Yeh, Chien-chan   Kuo, Ying-chih   Lin wei feng   Fan, Chun-sheng   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A cavityless chip-scale image-sensor package includes a substrate, a microlens array, and a low-index layer. The substrate includes a plurality of pixels forming a pixel array. The microlens array includes a plurality of microlenses each (i) having a lens refractive index, (ii) being aligned to a respective one of the plurality of pixels and (iii) having a non-planar microlens surfaces facing away from the respective one of the plurality of pixels. The low-index layer has a first refractive index less than the lens refractive index. The low-index layer also includes a bottom surface, at least part of which is conformal to each non-planar microlens surface. The microlens array is between the pixel array and the low-index layer.
11
US2020322507A1
LIGHT-FIELD CAMERA AND METHOD USING WAFER-LEVEL INTEGRATION PROCESS
Publication/Patent Number: US2020322507A1 Publication Date: 2020-10-08 Application Number: 16/377,391 Filing Date: 2019-04-08 Inventor: Chen, Teng-sheng   Deng, Jau-jan   Chang, Chia-yang   Lin wei feng   Assignee: OmniVision Technologies, Inc.   IPC: H04N5/225 Abstract: A camera module has light-field camera(s) and high resolution camera(s), the light-field camera(s) have multiple-lens arrays above an image sensor. The light-field camera(s) have a lens element at a same level as a lens element of the high resolution camera, the lens elements bearing apertures. The multiple-lens array of the light-field camera is above the image sensor at a same level as a flat transparent plate of the high resolution camera. The cameras lens cubes are made simultaneously by bonding molded lens plates and spacer plates, the lens plates and spacer plates including an upper lens plate having upper light-field camera lens elements and upper high resolution camera lens elements with applied apertures, multiple spacer plates, a microlens plate bearing an array of microlenses in the light-field cameras, the microlens plate being flat and transparent in areas of the high resolution camera.
12
US202052019A1
CAVITYLESS CHIP-SCALE IMAGE-SENSOR PACKAGE
Publication/Patent Number: US202052019A1 Publication Date: 2020-02-13 Application Number: 20/181,610 Filing Date: 2018-08-10 Inventor: Lin wei feng   Fan, Chun-sheng   Yeh, Chien-chan   Kuo, Ying-chih   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A cavityless chip-scale image-sensor package includes a substrate, a microlens array, and a low-index layer. The substrate includes a plurality of pixels forming a pixel array. The microlens array includes a plurality of microlenses each (i) having a lens refractive index, (ii) being aligned to a respective one of the plurality of pixels and (iii) having a non-planar microlens surfaces facing away from the respective one of the plurality of pixels. The low-index layer has a first refractive index less than the lens refractive index. The low-index layer also includes a bottom surface, at least part of which is conformal to each non-planar microlens surface. The microlens array is between the pixel array and the low-index layer.
13
TWI663721B
Chip-scale image sensor package and associated method of making
Publication/Patent Number: TWI663721B Publication Date: 2019-06-21 Application Number: 107109297 Filing Date: 2018-03-19 Inventor: Lin wei feng   Tsai, Chen Wei   Fan, Chun Sheng   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A chip-scale image sensor package includes a semiconductor substrate, a transparent substrate, a thin film, and a plurality of conductive pads. The semiconductor substrate has (i) a pixel array, and (ii) a peripheral region surrounding the pixel array. The transparent substrate covers the pixel array, has a bottom substrate surface proximate the pixel array, and a top substrate surface opposite the bottom substrate surface. The thin film is on a region of the top substrate surface directly above both (i) the entire pixel array and (ii) a portion of the peripheral region adjacent to the pixel array. Each of the plurality of conductive pads is located within the peripheral region, and is electrically connected to the pixel array. A portion of each of the plurality of conductive pads is not directly beneath the thin film.
14
US10312276B2
Image sensor package to limit package height and reduce edge flare
Publication/Patent Number: US10312276B2 Publication Date: 2019-06-04 Application Number: 15/666,901 Filing Date: 2017-08-02 Inventor: Chien, Wei-chih   Lin wei feng   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate; a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; at least one solder ball that is electrically coupled to the RDL; and a cover glass that is coupled to the RDL. No part of the RDL is located directly above or below the image sensor pixel array. No part of the at least one solder ball is located directly above or below the silicon substrate. A dark material layer is implemented to prevent an edge flare effect of the image sensor pixel array.
15
TW201911555A
Image sensor package to limit package height and reduce edge flare
Publication/Patent Number: TW201911555A Publication Date: 2019-03-16 Application Number: 107120640 Filing Date: 2018-06-15 Inventor: Lin wei feng   Chien, Wei-chih   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate; a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; at least one solder ball that is electrically coupled to the RDL; and a cover glass that is coupled to the RDL. No part of the RDL is located directly above or below the image sensor pixel array. No part of the at least one solder ball is located directly above or below the silicon substrate. A dark material layer is implemented to prevent an edge flare effect of the image sensor pixel array.
16
US2019043904A1
IMAGE SENSOR PACKAGE TO LIMIT PACKAGE HEIGHT AND REDUCE EDGE FLARE
Publication/Patent Number: US2019043904A1 Publication Date: 2019-02-07 Application Number: 15/666,901 Filing Date: 2017-08-02 Inventor: Chien, Wei-chih   Lin wei feng   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate; a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; at least one solder ball that is electrically coupled to the RDL; and a cover glass that is coupled to the RDL. No part of the RDL is located directly above or below the image sensor pixel array. No part of the at least one solder ball is located directly above or below the silicon substrate. A dark material layer is implemented to prevent an edge flare effect of the image sensor pixel array.
17
TW201909402A
Image sensor module having protective structure, method for making the same and camera module
Publication/Patent Number: TW201909402A Publication Date: 2019-03-01 Application Number: 107124859 Filing Date: 2018-07-18 Inventor: Lin wei feng   Huang, Chi-chih   Su, Yu-mei   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor module, a method for making the same and a camera module are provided. The image sensor module comprises: a substrate having a first side and second side, the first side being an opposite of the second side, an image sensor attached to the first side of the substrate, bonding wires to bond the image sensor to pads on the first side of the substrate, a protective structure disposed on the first side of the substrate surrounding the image sensor, the bonding wires, and the pads, the protective structure having a dam and a lid, a cover glass disposed on the protective structure, and a set of solder balls attached to the second side of the substrate.
18
TWI665794B
System-in-package image sensor
Publication/Patent Number: TWI665794B Publication Date: 2019-07-11 Application Number: 106141083 Filing Date: 2017-11-27 Inventor: Lin wei feng   Huang, Chi-chih   Li, En-chi   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor package includes a ceramic substrate with a cavity disposed in the ceramic substrate. A glass layer is adhered to the ceramic substrate and encloses the cavity in the ceramic substrate. An image sensor is disposed in the cavity between the glass layer and the ceramic substrate to electrically isolate the image sensor. An image sensor processor is disposed in the cavity and electrically coupled to the image sensor to receive image data from the image sensor.
19
US2019027531A1
IMAGE SENSOR MODULE HAVING PROTECTIVE STRUCTURE
Publication/Patent Number: US2019027531A1 Publication Date: 2019-01-24 Application Number: 15/654,271 Filing Date: 2017-07-19 Inventor: Lin wei feng   Huang, Chi-chih   Su, Yu-mei   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor module comprises: a substrate having a first side and second side, the first side being an opposite of the second side, an image sensor attached to the first side of the substrate, bonding wires to bond the image sensor to pads on the first side of the substrate, a protective structure disposed on the first side of the substrate surrounding the image sensor, the bonding wires, and the pads, the protective structure having a dam and a lid, a cover glass disposed on the protective structure, and a set of solder balls attached to the second side of the substrate.
20
US10256266B2
Chip-scale image sensor package and associated method of making
Publication/Patent Number: US10256266B2 Publication Date: 2019-04-09 Application Number: 15/480,131 Filing Date: 2017-04-05 Inventor: Tsai, Chen-wei   Fan, Chun-sheng   Lin wei feng   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A chip-scale image sensor package includes a semiconductor substrate, a transparent substrate, a thin film, and a plurality of conductive pads. The semiconductor substrate has (i) a pixel array, and (ii) a peripheral region surrounding the pixel array. The transparent substrate covers the pixel array, has a bottom substrate surface proximate the pixel array, and a top substrate surface opposite the bottom substrate surface. The thin film is on a region of the top substrate surface directly above both (i) the entire pixel array and (ii) a portion of the peripheral region adjacent to the pixel array. Each of the plurality of conductive pads is located within the peripheral region, and is electrically connected to the pixel array. A portion of each of the plurality of conductive pads is not directly beneath the thin film.