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1 | US2020098806A1 |
IMAGE-SENSOR PACKAGE AND ASSOCIATED METHOD
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Publication/Patent Number: US2020098806A1 | Publication Date: 2020-03-26 | Application Number: 16/139,019 | Filing Date: 2018-09-22 | Inventor： Lin wei feng Fan, Chun-sheng | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: An image-sensor package includes a cover glass, an image sensor, and an integrated circuit. The cover glass has a cover-glass bottom surface, to which the image sensor is bonded. The integrated circuit is beneath the cover-glass bottom surface, adjacent to the image sensor, and electronically connected to the image sensor. A method for packaging an image sensor includes attaching an image sensor to a cover-glass bottom surface of a cover glass, a light-sensing region of the image sensor facing the cover-glass bottom surface. The method also includes attaching an integrated circuit to the cover-glass bottom surface, a top IC-surface of the integrated circuit facing the cover-glass bottom surface. | |||
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2 | US2020395730A1 |
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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Publication/Patent Number: US2020395730A1 | Publication Date: 2020-12-17 | Application Number: 16/440,031 | Filing Date: 2019-06-13 | Inventor： Fan, Chun-sheng Lin wei feng | Assignee: OMNIVISION TECHNOLOGIES, INC. | IPC: H01S5/022 | Abstract: A semiconductor structure is provided. The semiconductor structure includes: a substrate having a cavity recessed from a top surface of the substrate toward a bottom surface of the substrate opposite to the top surface, wherein the cavity has a sidewall and a bottom surface, and the bottom surface of the cavity is substantially parallel to the top surface of the substrate; a light source structure in the cavity, and the light source structure emitting a light from a sidewall of the light source structure; and a diffractive optical element (DOE) over the top surface of the substrate; wherein the sidewall of the cavity is a sloped surface, so that when the light is incident on the sidewall, the sloped surface reflects the incident light to generate a reflected light toward the DOE. Associated semiconductor structure and manufacturing method are also disclosed. | |||
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3 | US2020387002A1 |
DIFFRACTIVE OPTICAL ELEMENTS MADE OF CONDUCTIVE MATERIALS
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Publication/Patent Number: US2020387002A1 | Publication Date: 2020-12-10 | Application Number: 16/430,517 | Filing Date: 2019-06-04 | Inventor： Fan, Chun-sheng Lin wei feng | Assignee: OmniVision Technologies, Inc. | IPC: G02B27/09 | Abstract: A diffractive optical element (DOE) comprises a first part comprising a first transparent non-conductive base and a first transparent conductive layer disposed on the first transparent non-conductive base and a second part comprising a second transparent non-conductive base and a second transparent conductive layer disposed on the second transparent non-conductive base. The first transparent conductive layer and the second transparent conductive layer have periodical patterns of thickness for diffracting light. Spacers separate the first part and the second part. The first part and the second part are positioned such that the first transparent conductive layer is facing the second transparent conductive layer. A first end of the first transparent conductive layer is electrically connected to a first terminal of a capacitance monitor, and a second end of the second transparent conductive layer is electrically connected to a second terminal of the capacitance monitor. The capacitance monitor constantly monitors the capacitance across the first transparent conductive layer and the second transparent conductive layer during an operation comprising diffracting a laser beam. | |||
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4 | US2020243384A1 |
LASER MARKED CODE PATTERN FOR REPRESENTING TRACING NUMBER OF CHIP
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Publication/Patent Number: US2020243384A1 | Publication Date: 2020-07-30 | Application Number: 16/257,223 | Filing Date: 2019-01-25 | Inventor： Lin wei feng Huang, Chi-chih | Assignee: OmniVision Technologies, Inc. | IPC: H01L21/768 | Abstract: A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern formed using laser marking on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the at least one code pattern is visible from a backside of the chip, the at least one code pattern represents a binary number having four bits; and the binary number represents a decimal number to represent a tracing number of the chip. | |||
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5 | US2020357842A1 |
IMAGE SENSOR MODULE HAVING PROTECTIVE STRUCTURE THAT BLOCKS INCIDENT LIGHT TO ARRIVE AT BONDING WIRES AND PADS
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Publication/Patent Number: US2020357842A1 | Publication Date: 2020-11-12 | Application Number: 16/937,759 | Filing Date: 2020-07-24 | Inventor： Lin wei feng Huang, Chi-chih Su, Yu-mei | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: An image sensor module comprises: a substrate having a first side and second side, the first side being an opposite of the second side, an image sensor attached to the first side of the substrate, bonding wires to bond the image sensor to pads on the first side of the substrate, a protective structure disposed on the first side of the substrate surrounding the image sensor, the bonding wires, and the pads, the protective structure having a dam and a lid, a cover glass disposed on the protective structure, and a set of solder balls attached to the second side of the substrate. | |||
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6 | US2020227394A1 |
SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
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Publication/Patent Number: US2020227394A1 | Publication Date: 2020-07-16 | Application Number: 16/248,125 | Filing Date: 2019-01-15 | Inventor： Yeh, Chien Chan Kuo, Ying-chih Lin wei feng | Assignee: Omnivision Technologies, Inc. | IPC: H01L25/16 | Abstract: A semiconductor device package includes a transparent substrate, a photo detector and a first conductive layer. The transparent substrate has a first surface and a first cavity underneath the first surface. The photo detector is disposed within the first cavity. The photo detector has a sensing area facing toward a bottom surface of the first cavity of the transparent substrate. The first conductive layer is disposed over the transparent substrate and electrically connected to the photo detector. | |||
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7 | US10644048B2 |
Anti-reflective coating with high refractive index material at air interface
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Publication/Patent Number: US10644048B2 | Publication Date: 2020-05-05 | Application Number: 15/421,879 | Filing Date: 2017-02-01 | Inventor： Fan, Chun-sheng Tsai, Chen-wei Lin wei feng | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride. | |||
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8 | US2020335534A1 |
ANTI-REFLECTIVE COATING WITH HIGH REFRACTIVE INDEX MATERIAL AT AIR INTERFACE
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Publication/Patent Number: US2020335534A1 | Publication Date: 2020-10-22 | Application Number: 16/816,683 | Filing Date: 2020-03-12 | Inventor： Fan, Chun-sheng Tsai, Chen-wei Lin wei feng | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride. | |||
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9 | US10868945B2 |
Light-field camera and method using wafer-level integration process
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Publication/Patent Number: US10868945B2 | Publication Date: 2020-12-15 | Application Number: 16/377,391 | Filing Date: 2019-04-08 | Inventor： Chen, Teng-sheng Deng, Jau-jan Chang, Chia-yang Lin wei feng | Assignee: OmniVision Technologies, Inc. | IPC: H04N5/225 | Abstract: A camera module has light-field camera(s) and high resolution camera(s), the light-field camera(s) have multiple-lens arrays above an image sensor. The light-field camera(s) have a lens element at a same level as a lens element of the high resolution camera, the lens elements bearing apertures. The multiple-lens array of the light-field camera is above the image sensor at a same level as a flat transparent plate of the high resolution camera. The cameras lens cubes are made simultaneously by bonding molded lens plates and spacer plates, the lens plates and spacer plates including an upper lens plate having upper light-field camera lens elements and upper high resolution camera lens elements with applied apertures, multiple spacer plates, a microlens plate bearing an array of microlenses in the light-field cameras, the microlens plate being flat and transparent in areas of the high resolution camera. | |||
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10 | US2020052019A1 |
CAVITYLESS CHIP-SCALE IMAGE-SENSOR PACKAGE
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Publication/Patent Number: US2020052019A1 | Publication Date: 2020-02-13 | Application Number: 16/100,835 | Filing Date: 2018-08-10 | Inventor： Yeh, Chien-chan Kuo, Ying-chih Lin wei feng Fan, Chun-sheng | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: A cavityless chip-scale image-sensor package includes a substrate, a microlens array, and a low-index layer. The substrate includes a plurality of pixels forming a pixel array. The microlens array includes a plurality of microlenses each (i) having a lens refractive index, (ii) being aligned to a respective one of the plurality of pixels and (iii) having a non-planar microlens surfaces facing away from the respective one of the plurality of pixels. The low-index layer has a first refractive index less than the lens refractive index. The low-index layer also includes a bottom surface, at least part of which is conformal to each non-planar microlens surface. The microlens array is between the pixel array and the low-index layer. | |||
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11 | US2020322507A1 |
LIGHT-FIELD CAMERA AND METHOD USING WAFER-LEVEL INTEGRATION PROCESS
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Publication/Patent Number: US2020322507A1 | Publication Date: 2020-10-08 | Application Number: 16/377,391 | Filing Date: 2019-04-08 | Inventor： Chen, Teng-sheng Deng, Jau-jan Chang, Chia-yang Lin wei feng | Assignee: OmniVision Technologies, Inc. | IPC: H04N5/225 | Abstract: A camera module has light-field camera(s) and high resolution camera(s), the light-field camera(s) have multiple-lens arrays above an image sensor. The light-field camera(s) have a lens element at a same level as a lens element of the high resolution camera, the lens elements bearing apertures. The multiple-lens array of the light-field camera is above the image sensor at a same level as a flat transparent plate of the high resolution camera. The cameras lens cubes are made simultaneously by bonding molded lens plates and spacer plates, the lens plates and spacer plates including an upper lens plate having upper light-field camera lens elements and upper high resolution camera lens elements with applied apertures, multiple spacer plates, a microlens plate bearing an array of microlenses in the light-field cameras, the microlens plate being flat and transparent in areas of the high resolution camera. | |||
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12 | US202052019A1 |
CAVITYLESS CHIP-SCALE IMAGE-SENSOR PACKAGE
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Publication/Patent Number: US202052019A1 | Publication Date: 2020-02-13 | Application Number: 20/181,610 | Filing Date: 2018-08-10 | Inventor： Lin wei feng Fan, Chun-sheng Yeh, Chien-chan Kuo, Ying-chih | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: A cavityless chip-scale image-sensor package includes a substrate, a microlens array, and a low-index layer. The substrate includes a plurality of pixels forming a pixel array. The microlens array includes a plurality of microlenses each (i) having a lens refractive index, (ii) being aligned to a respective one of the plurality of pixels and (iii) having a non-planar microlens surfaces facing away from the respective one of the plurality of pixels. The low-index layer has a first refractive index less than the lens refractive index. The low-index layer also includes a bottom surface, at least part of which is conformal to each non-planar microlens surface. The microlens array is between the pixel array and the low-index layer. | |||
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13 | TWI663721B |
Chip-scale image sensor package and associated method of making
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Publication/Patent Number: TWI663721B | Publication Date: 2019-06-21 | Application Number: 107109297 | Filing Date: 2018-03-19 | Inventor： Lin wei feng Tsai, Chen Wei Fan, Chun Sheng | Assignee: OMNIVISION TECHNOLOGIES, INC. | IPC: H01L27/146 | Abstract: A chip-scale image sensor package includes a semiconductor substrate, a transparent substrate, a thin film, and a plurality of conductive pads. The semiconductor substrate has (i) a pixel array, and (ii) a peripheral region surrounding the pixel array. The transparent substrate covers the pixel array, has a bottom substrate surface proximate the pixel array, and a top substrate surface opposite the bottom substrate surface. The thin film is on a region of the top substrate surface directly above both (i) the entire pixel array and (ii) a portion of the peripheral region adjacent to the pixel array. Each of the plurality of conductive pads is located within the peripheral region, and is electrically connected to the pixel array. A portion of each of the plurality of conductive pads is not directly beneath the thin film. | |||
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14 | US10312276B2 |
Image sensor package to limit package height and reduce edge flare
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Publication/Patent Number: US10312276B2 | Publication Date: 2019-06-04 | Application Number: 15/666,901 | Filing Date: 2017-08-02 | Inventor： Chien, Wei-chih Lin wei feng | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate; a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; at least one solder ball that is electrically coupled to the RDL; and a cover glass that is coupled to the RDL. No part of the RDL is located directly above or below the image sensor pixel array. No part of the at least one solder ball is located directly above or below the silicon substrate. A dark material layer is implemented to prevent an edge flare effect of the image sensor pixel array. | |||
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15 | TW201911555A |
Image sensor package to limit package height and reduce edge flare
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Publication/Patent Number: TW201911555A | Publication Date: 2019-03-16 | Application Number: 107120640 | Filing Date: 2018-06-15 | Inventor： Lin wei feng Chien, Wei-chih | Assignee: OMNIVISION TECHNOLOGIES, INC. | IPC: H01L27/146 | Abstract: An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate; a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; at least one solder ball that is electrically coupled to the RDL; and a cover glass that is coupled to the RDL. No part of the RDL is located directly above or below the image sensor pixel array. No part of the at least one solder ball is located directly above or below the silicon substrate. A dark material layer is implemented to prevent an edge flare effect of the image sensor pixel array. | |||
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16 | US2019043904A1 |
IMAGE SENSOR PACKAGE TO LIMIT PACKAGE HEIGHT AND REDUCE EDGE FLARE
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Publication/Patent Number: US2019043904A1 | Publication Date: 2019-02-07 | Application Number: 15/666,901 | Filing Date: 2017-08-02 | Inventor： Chien, Wei-chih Lin wei feng | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate; a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; at least one solder ball that is electrically coupled to the RDL; and a cover glass that is coupled to the RDL. No part of the RDL is located directly above or below the image sensor pixel array. No part of the at least one solder ball is located directly above or below the silicon substrate. A dark material layer is implemented to prevent an edge flare effect of the image sensor pixel array. | |||
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17 | TW201909402A |
Image sensor module having protective structure, method for making the same and camera module
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Publication/Patent Number: TW201909402A | Publication Date: 2019-03-01 | Application Number: 107124859 | Filing Date: 2018-07-18 | Inventor： Lin wei feng Huang, Chi-chih Su, Yu-mei | Assignee: OMNIVISION TECHNOLOGIES, INC. | IPC: H01L27/146 | Abstract: An image sensor module, a method for making the same and a camera module are provided. The image sensor module comprises: a substrate having a first side and second side, the first side being an opposite of the second side, an image sensor attached to the first side of the substrate, bonding wires to bond the image sensor to pads on the first side of the substrate, a protective structure disposed on the first side of the substrate surrounding the image sensor, the bonding wires, and the pads, the protective structure having a dam and a lid, a cover glass disposed on the protective structure, and a set of solder balls attached to the second side of the substrate. | |||
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18 | TWI665794B |
System-in-package image sensor
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Publication/Patent Number: TWI665794B | Publication Date: 2019-07-11 | Application Number: 106141083 | Filing Date: 2017-11-27 | Inventor： Lin wei feng Huang, Chi-chih Li, En-chi | Assignee: OMNIVISION TECHNOLOGIES, INC. | IPC: H01L27/146 | Abstract: An image sensor package includes a ceramic substrate with a cavity disposed in the ceramic substrate. A glass layer is adhered to the ceramic substrate and encloses the cavity in the ceramic substrate. An image sensor is disposed in the cavity between the glass layer and the ceramic substrate to electrically isolate the image sensor. An image sensor processor is disposed in the cavity and electrically coupled to the image sensor to receive image data from the image sensor. | |||
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19 | US2019027531A1 |
IMAGE SENSOR MODULE HAVING PROTECTIVE STRUCTURE
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Publication/Patent Number: US2019027531A1 | Publication Date: 2019-01-24 | Application Number: 15/654,271 | Filing Date: 2017-07-19 | Inventor： Lin wei feng Huang, Chi-chih Su, Yu-mei | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: An image sensor module comprises: a substrate having a first side and second side, the first side being an opposite of the second side, an image sensor attached to the first side of the substrate, bonding wires to bond the image sensor to pads on the first side of the substrate, a protective structure disposed on the first side of the substrate surrounding the image sensor, the bonding wires, and the pads, the protective structure having a dam and a lid, a cover glass disposed on the protective structure, and a set of solder balls attached to the second side of the substrate. | |||
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20 | US10256266B2 |
Chip-scale image sensor package and associated method of making
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Publication/Patent Number: US10256266B2 | Publication Date: 2019-04-09 | Application Number: 15/480,131 | Filing Date: 2017-04-05 | Inventor： Tsai, Chen-wei Fan, Chun-sheng Lin wei feng | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: A chip-scale image sensor package includes a semiconductor substrate, a transparent substrate, a thin film, and a plurality of conductive pads. The semiconductor substrate has (i) a pixel array, and (ii) a peripheral region surrounding the pixel array. The transparent substrate covers the pixel array, has a bottom substrate surface proximate the pixel array, and a top substrate surface opposite the bottom substrate surface. The thin film is on a region of the top substrate surface directly above both (i) the entire pixel array and (ii) a portion of the peripheral region adjacent to the pixel array. Each of the plurality of conductive pads is located within the peripheral region, and is electrically connected to the pixel array. A portion of each of the plurality of conductive pads is not directly beneath the thin film. |
3.Current Quota