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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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21
US2020286775A1
INTERCONNECT STRUCTURE AND METHOD FOR PREPARING THE SAME
Publication/Patent Number: US2020286775A1 Publication Date: 2020-09-10 Application Number: 16/291,376 Filing Date: 2019-03-04 Inventor: Wang, Mao-ying   Shih, Shing-yih   Wu, Hung-mo   Ting, Yung-te   Lin yu ting   Assignee: NANYA TECHNOLOGY CORPORATION   IPC: H01L21/768 Abstract: The present disclosure provides an interconnect structure. The interconnect structure includes a first connecting line, a second connecting line disposed over the first connecting line, and a connecting via disposed in a dielectric structure between the first connecting line and the second connecting line, and electrically connecting the first connecting line and the second connecting line. The connecting via includes a head portion and a body portion, and a width of the head portion is greater than a width of the body portion.
22
US202043781A1
Semiconductor Device and Method
Publication/Patent Number: US202043781A1 Publication Date: 2020-02-06 Application Number: 20/191,659 Filing Date: 2019-10-11 Inventor: Tsai, Ming-hsing   Wang, Yu-sheng   Hung, Chi-cheng   Su, Ching-hwanq   Lin yu ting   Ou, Yang Liang-yueh   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L29/66 Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer.
23
US10685842B2
Selective formation of titanium silicide and titanium nitride by hydrogen gas control
Publication/Patent Number: US10685842B2 Publication Date: 2020-06-16 Application Number: 15/983,216 Filing Date: 2018-05-18 Inventor: Chang, Cheng-wei   Lin, Kao-feng   Hung, Min-hsiu   Chao, Yi-hsiang   Huang, Huang-yi   Lin yu ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/285 Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.
24
US10867845B2
Semiconductor device and method
Publication/Patent Number: US10867845B2 Publication Date: 2020-12-15 Application Number: 16/599,940 Filing Date: 2019-10-11 Inventor: Wang, Yu-sheng   Hung, Chi-cheng   Su, Ching-hwanq   Ou, Yang Liang-yueh   Tsai, Ming-hsing   Lin yu ting   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L21/768 Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer.
25
US2020294807A1
SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HYDROGEN GAS CONTROL
Publication/Patent Number: US2020294807A1 Publication Date: 2020-09-17 Application Number: 16/887,218 Filing Date: 2020-05-29 Inventor: Chang, Cheng-wei   Lin, Kao-feng   Hung, Min-hsiu   Chao, Yi-hsiang   Huang, Huang-yi   Lin yu ting   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/285 Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.
26
US2020043781A1
Semiconductor Device and Method
Publication/Patent Number: US2020043781A1 Publication Date: 2020-02-06 Application Number: 16/599,940 Filing Date: 2019-10-11 Inventor: Wang, Yu-sheng   Hung, Chi-cheng   Su, Ching-hwanq   Ou, Yang Liang-yueh   Tsai, Ming-hsing   Lin yu ting   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L21/768 Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer.
27
US2020105519A1
PRE-CLEAN FOR CONTACTS
Publication/Patent Number: US2020105519A1 Publication Date: 2020-04-02 Application Number: 16/146,529 Filing Date: 2018-09-28 Inventor: Lin yu ting   Kao, Chen-yuan   Lin, Rueijer   Wang, Yu-sheng   Chen, I-li   Wu, Hong-ming   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/02 Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.
28
US2020343087A1
Pre-Clean for Contacts
Publication/Patent Number: US2020343087A1 Publication Date: 2020-10-29 Application Number: 16/927,638 Filing Date: 2020-07-13 Inventor: Lin yu ting   Kao, Chen-yuan   Lin, Rueijer   Wang, Yu-sheng   Chen, I-li   Wu, Hong-ming   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/02 Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.
29
US10714329B2
Pre-clean for contacts
Publication/Patent Number: US10714329B2 Publication Date: 2020-07-14 Application Number: 16/146,529 Filing Date: 2018-09-28 Inventor: Lin yu ting   Kao, Chen-yuan   Lin, Rueijer   Wang, Yu-sheng   Chen, I-li   Wu, Hong-ming   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/4763 Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.
30
US10846262B2
Data migration to a cloud computing system
Publication/Patent Number: US10846262B2 Publication Date: 2020-11-24 Application Number: 16/241,262 Filing Date: 2019-01-07 Inventor: Yap, Joe Keng   Thangaraju, Mahadevan   Livingston, Sean L.   Cannerozzi, Roberta   Moussa, Ghania   Estrin, Ron Shimon   Lin yu ting   Bourdages, Simon   Nguyen, Trung Duc   Cai, Wenyu   Koehne, Zachary Adam   Simek, Patrick J.   Gulati, Sukhvinder Singh   Canning, Ben   Assignee: Microsoft Technology Licensing, LLC   IPC: G06F16/11 Abstract: A cloud-based migration system exposes a source-independent application programming interface for receiving data to be migrated. The data is uploaded and stored as a single entity in a cloud-based storage system. A migration system then accesses the migration package and begins migrating the data to its destination, from the cloud-based storage system.
31
US2020387476A1
DATA MIGRATION TO A CLOUD COMPUTING SYSTEM
Publication/Patent Number: US2020387476A1 Publication Date: 2020-12-10 Application Number: 17/002,021 Filing Date: 2020-08-25 Inventor: Yap, Joe Keng   Thangaraju, Mahadevan   Livingston, Sean L.   Cannerozzi, Roberta   Moussa, Ghania   Estrin, Ron Shimon   Lin yu ting   Bourdages, Simon   Nguyen, Trung Duc   Cai, Wenyu   Koehne, Zachary Adam   Simek, Patrick J.   Gulati, Sukhvinder Singh   Canning, Ben   Assignee: Microsoft Technology Licensing, LLC   IPC: G06F16/11 Abstract: A cloud-based migration system exposes a source-independent application programming interface for receiving data to be migrated. The data is uploaded and stored as a single entity in a cloud-based storage system. A migration system then accesses the migration package and begins migrating the data to its destination, from the cloud-based storage system.
32
TW201904603A
Use of black tomato extracts for reducing eye pressure and retina impairment caused by blue light and improving accommodative facility in eyes
Publication/Patent Number: TW201904603A Publication Date: 2019-02-01 Application Number: 106119872 Filing Date: 2017-06-14 Inventor: Lin, Yu Ting   Lin, Yung Hsiang   Assignee: TCI CO., LTD   IPC: A61P27/02 Abstract: The present invention provides uses of a black tomato extract for manufacture of composition for reducing eye pressure and retina impairment caused by blue light and improving accommodative facility in eyes. The black tomato extract is prepared by extracting black tomato using water, alcohols, or mixtures of water and alcohols as solvents. The present invention also provides uses of the black tomato extract as a scavenger of reactive oxygen species (ROS). The black tomato extract is effective in reducing ROS accumulation in retina cells exposed to blue light and may reduce oxidative impairment in retina. The black tomato extract also reduces eye pressure and improves accommodative facility in eyes, and thus it has the potential to decrease the risk of glaucoma and the incidence and deterioration of near vision.
33
KR20190050927A
MMP2 Use of Mimosa pudica extracts for manufacture of composition for inhibiting MMP2 gene expression and collagen degradation
Publication/Patent Number: KR20190050927A Publication Date: 2019-05-14 Application Number: 20180008689 Filing Date: 2018-01-24 Inventor: Lin, Yung Hsiang   Lin, Yu Ting   Assignee: TCI CO., LTD.   IPC: A61Q19/08 Abstract: The present invention provides a use of a Mimosa pudica extract for manufacturing a composition inhibiting expression of matrix metalloproteinase 2 (MMP2) gene and for manufacturing a composition inhibiting collagen degradation. The Mimosa pudica extract according to the present invention is manufactured by extracting Mimosa pudica using water, alcohols, or an alcohol-water mixture as a solvent. The Mimosa pudica extract inhibits gene expression of MMP2 in dermal fibroblasts to reduce collagen degradation in the skin, thereby improving skin elasticity and compactness, reducing the appearance of fine lines and wrinkles of skin, and delaying skin aging.
34
TWI667035B
Use of black tomato extracts for reducing eye pressure and retina impairment caused by blue light and improving accommodative facility in eyes
Publication/Patent Number: TWI667035B Publication Date: 2019-08-01 Application Number: 106119872 Filing Date: 2017-06-14 Inventor: Lin, Yu Ting   Lin, Yung Hsiang   Assignee: TCI CO., LTD   IPC: A61P27/02 Abstract: The present invention provides uses of a black tomato extract for manufacture of composition for reducing eye pressure and retina impairment caused by blue light and improving accommodative facility in eyes. The black tomato extract is prepared by extracting black tomato using water, alcohols, or mixtures of water and alcohols as solvents. The present invention also provides uses of the black tomato extract as a scavenger of reactive oxygen species (ROS). The black tomato extract is effective in reducing ROS accumulation in retina cells exposed to blue light and may reduce oxidative impairment in retina. The black tomato extract also reduces eye pressure and improves accommodative facility in eyes, and thus it has the potential to decrease the risk of glaucoma and the incidence and deterioration of near vision.
35
TWI657820B
Herba ecliptae extract having functionality to inhibit the gene expression of melanocortin 1-receptor and microphthalamia-associated transcription factor
Publication/Patent Number: TWI657820B Publication Date: 2019-05-01 Application Number: 106112060 Filing Date: 2017-04-11 Inventor: Lin, Yu Ting   Lin, Yung Hsiang   Chen, I Hui   Assignee: TCI CO., LTD   IPC: A61Q19/02 Abstract: The present invention provides a Herba Ecliptae extract, which can inhibit the activity of tyrosinase in the melanoma cells, the secretion of prostaglandin E2 in the keratinocyte, and finally can achieve the effect of reducing melanin formation by inhibition gene expression of melanocortin 1-receptor and microphthalamia-associated transcription factor.
36
US10510851B2
Low resistance contact method and structure
Publication/Patent Number: US10510851B2 Publication Date: 2019-12-17 Application Number: 15/583,570 Filing Date: 2017-05-01 Inventor: Wang, Yu-sheng   Lin yu ting   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L29/417 Abstract: A device includes a metal-silicide region formed in a semiconductor material in a contact opening. A concentration of a material, including chlorine, fluorine, or a combination thereof is in the metal-silicide region near an uppermost surface of the metal-silicide region. The presence of chlorine or fluorine results from a physical bombarding of the chlorine or fluorine in the contact opening. As a result of the physical bombard, the opening becomes wider at the bottom of the opening and the sidewalls of the opening are thinned. A capping layer is over the metal-silicide region and over sidewalls of a contact plug opening. A contact plug is formed over the capping layer, filling the contact plug opening. Before the contact plug is formed, a silicidation occurs to form the metal-silicide and the metal-silicide is wider than the bottom of the opening.
37
US2019134134A1
METHOD FOR REDUCING THE CONTENT OF HEAVY METALS IN BLOOD AND IMPROVING THE PULMONARY FUNCTION USING GREEN PEAR FRUITLET EXTRACT
Publication/Patent Number: US2019134134A1 Publication Date: 2019-05-09 Application Number: 16/174,573 Filing Date: 2018-10-30 Inventor: Lin, Yung-hsiang   Lin yu ting   Assignee: TCI CO., LTD.   IPC: A61K36/73 Abstract: The present invention provides a method for reducing the content of heavy metals in blood and improving the pulmonary function using green pear fruitlet extract. The green pear fruitlet extract can effectively reduce the content of harmful heavy metals in human body to prevent the harmful effects of heavy metals, and improve forced vital capacity and the peak expiratory flow of humans to reduce the respiratory resistance and increase the expiratory flow. The green pear fruitlet extract is prepared by extracting green pear fruitlet using water, alcohol, or a mixture of water and alcohol as a solvent.
38
US2019358284A1
METHOD FOR PROMOTING HAIR GROWTH USING BANANA STAMEN EXTRACT
Publication/Patent Number: US2019358284A1 Publication Date: 2019-11-28 Application Number: 16/174,948 Filing Date: 2018-10-30 Inventor: Lin, Yung-hsiang   Lin yu ting   Assignee: TCI CO., LTD.   IPC: A61K36/88 Abstract: The present invention relates to a use of a banana stamen extract for promoting hair growth. The banana stamen extract according to the present invention promotes gene expression of VEGF and IGF1 to enhance the proliferation level of hair follicles, so that the density of hairs grown is increased. In addition, the banana stamen extract also inhibits gene expression of SRD5A1, SRDA2 and AR to decrease hair loss, and promote the gene expression of KROX20 so as to significantly enhance hair growth.
39
TW201907942A
Use of Mimosa pudica extracts for manufacture of composition for inhibiting MMP2 gene expression and collagen degradation
Publication/Patent Number: TW201907942A Publication Date: 2019-03-01 Application Number: 106124594 Filing Date: 2017-07-21 Inventor: Lin yu ting   Lin, Yung-hsiang   Assignee: TCI CO., LTD.   IPC: A61P43/00 Abstract: The present invention provides uses of a Mimosa pudica extract for manufacture of composition for inhibiting MMP2 gene expression and collagen degradation. The Mimosa pudica extract is prepared by extraction of Mimosa pudica using water, alcohols, or mixtures of water and alcohols as solvents. The Mimosa pudica extract can reduce collagen degradation via inhibiting MMP2 gene expression in skin fibroblasts, and thus contributes to improving skin elasticity and firmness, reducing fine lines wrinkles, and retarding skin aging.
40
US201983384A1
METHOD FOR CONDITIONING SKIN BY USING EARTHWORM PROTEIN
Publication/Patent Number: US201983384A1 Publication Date: 2019-03-21 Application Number: 20/171,585 Filing Date: 2017-12-22 Inventor: Lin yu ting   Lin, Yung-hsiang   Assignee: TCI Co., Ltd.   IPC: A61Q19/00 Abstract: A method for conditioning skin is provided, which comprises applying to a subject in need an effective amount of a composition, wherein the composition comprises earthworm protein. The method is especially for reducing the concentration of erythema on skin and/or decreasing the size of pores on skin.
Total 26 pages