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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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121
US10153203B2
Methods for forming metal layers in openings and apparatus for forming same
Publication/Patent Number: US10153203B2 Publication Date: 2018-12-11 Application Number: 15/665,957 Filing Date: 2017-08-01 Inventor: Wang, Yu-sheng   Lin yu ting   Hsu, Hung-chang   Liu, Hsiao-ping   Lu, Hung Pin   Lin, Yuan Wen   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L21/768 Abstract: A method includes forming an Inter-layer Dielectric (ILD) having a portion at a same level as a metal gate of a transistor. The ILD and the metal gate are parts of a wafer. The ILD is etched to form a contact opening. The wafer is placed into a PVD tool, with a metal target in the PVD tool. The metal target has a first spacing from a magnet over the metal target, and a second spacing from the wafer. A ratio of the first spacing to the second spacing is greater than about 0.02. A metal layer is deposited on the wafer, with the metal layer having a bottom portion in the contact opening, and a sidewall portion in the contact opening. An anneal is performed to react the bottom portion of the metal layer with the source/drain region to form a silicide region.
122
US2018315647A1
Semiconductor Device and Method
Publication/Patent Number: US2018315647A1 Publication Date: 2018-11-01 Application Number: 15/583,789 Filing Date: 2017-05-01 Inventor: Wang, Yu-sheng   Hung, Chi-cheng   Su, Ching-hwanq   Ou, Yang Liang-yueh   Tsai, Ming-hsing   Lin yu ting   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L21/768 Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer.
123
US2018151429A1
Methods for Forming Metal Layers in Openings and Apparatus for Forming Same
Publication/Patent Number: US2018151429A1 Publication Date: 2018-05-31 Application Number: 15/665,957 Filing Date: 2017-08-01 Inventor: Lin, Yuan Wen   Lu, Hung Pin   Liu, Hsiao-ping   Hsu, Hung-chang   Lin yu ting   Wang, Yu-sheng   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L21/285 Abstract: A method includes forming an Inter-layer Dielectric (ILD) having a portion at a same level as a metal gate of a transistor. The ILD and the metal gate are parts of a wafer. The ILD is etched to form a contact opening. The wafer is placed into a PVD tool, with a metal target in the PVD tool. The metal target has a first spacing from a magnet over the metal target, and a second spacing from the wafer. A ratio of the first spacing to the second spacing is greater than about 0.02. A metal layer is deposited on the wafer, with the metal layer having a bottom portion in the contact opening, and a sidewall portion in the contact opening. An anneal is performed to react the bottom portion of the metal layer with the source/drain region to form a silicide region.
124
TW201842571A
A method of forming a semiconductor device
Publication/Patent Number: TW201842571A Publication Date: 2018-12-01 Application Number: 106127450 Filing Date: 2017-08-14 Inventor: Lin yu ting   Tsai, Ming-hsing   Wang, Yu-sheng   Hung, Chi-cheng   Su, Ching-hwanq   Ouyang, Liang-yueh   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/20 Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer.
125
US2018350924A1
CONTACT SILICIDE HAVING A NON-ANGULAR PROFILE
Publication/Patent Number: US2018350924A1 Publication Date: 2018-12-06 Application Number: 16/042,287 Filing Date: 2018-07-23 Inventor: Chen, Sheng-wen   Yu-shen, Shih   Lo, Chia Ping   Lin, Yan-hua   Tan, Lun-kuang   Lin yu ting   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L29/417 Abstract: A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be a cold implantation process.
126
US10032876B2
Contact silicide having a non-angular profile
Publication/Patent Number: US10032876B2 Publication Date: 2018-07-24 Application Number: 14/209,374 Filing Date: 2014-03-13 Inventor: Lin yu ting   Tan, Lun-kuang   Lin, Yan-hua   Lo, Chia Ping   Yu-shen, Shih   Chen, Sheng-wen   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.   IPC: H01L29/78 Abstract: A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be a cold implantation process.
127
DE102017127201A1
HALBLEITER-BAUELEMENT UND VERFAHREN
Publication/Patent Number: DE102017127201A1 Publication Date: 2018-11-08 Application Number: 102017127201 Filing Date: 2017-11-19 Inventor: Lin yu ting   Tsai, Ming-hsing   Wang, Yu-sheng   Hung, Chi-cheng   Su, Ching-hwanq   Yang, Liang-yueh Ou   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/336 Abstract: Ein Verfahren weist die folgenden Schritte auf: Herstellen einer ersten Öffnung in einer dielektrischen Schicht über einem Substrat; Bedecken von Seitenwänden und einem Boden der ersten Öffnung mit einer leitfähigen Sperrschicht; und Abscheiden einer Keim-Schicht über der leitfähigen Sperrschicht. Das Verfahren umfasst weiterhin das Behandeln der Keim-Schicht mit einem Plasma-Prozess; und das Füllen der ersten Öffnung mit einem leitfähigen Material nach dem Behandeln der Keim-Schicht.
128
US10157785B2
Semiconductor device and method
Publication/Patent Number: US10157785B2 Publication Date: 2018-12-18 Application Number: 15/583,789 Filing Date: 2017-05-01 Inventor: Wang, Yu-sheng   Hung, Chi-cheng   Su, Ching-hwanq   Ou, Yang Liang-yueh   Tsai, Ming-hsing   Lin yu ting   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L21/768 Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer.
129
TWI615611B
Gas detector including an electrode unit electrically connected to an electrical detector, and a sensing unit
Publication/Patent Number: TWI615611B Publication Date: 2018-02-21 Application Number: 105142197 Filing Date: 2016-12-20 Inventor: Wang, Chien-lung   Lin yu ting   Zhang, Liang-you   Meng, Xin-fei   Dong, Ting-wei   Zhuang, Ming-yan   Wu, Yi-zhu   Mao, Yu-nung   Ran, Xiao-wen   Assignee: National Chiao Tung University   IPC: G01N27/403 Abstract: A gas detector is configured to be used with an electrical detector. The gas detector includes an electrode unit for being electrically connected to the electrical detector, and a sensing unit. The electrode unit includes a first electrode layer and a second electrode layer spaced from the first electrode layer. The second electrode layer includes two opposite electrode surfaces and is formed with a plurality of through holes penetrating through the electrode surfaces. The sensing unit includes a sensing layer connected to the first electrode layer and the second electrode layer and configured to interact with the gas under test. The sensing layer includes at least one sensing material having a functional group, wherein the functional group is selected from one of a fluorenyl-based group, a fluorenyl-based and triphenylamine-based group, a phenylene vinylene-based group, and a dithiophenebenzodithiophenyl-based and thioenothiophenyl -based group.
130
TW201809654A
Gas detector including an electrode unit electrically connected to an electrical detector, and a sensing unit
Publication/Patent Number: TW201809654A Publication Date: 2018-03-16 Application Number: 105142197 Filing Date: 2016-12-20 Inventor: Wang, Chien-lung   Lin yu ting   Zhang, Liang-you   Meng, Xin-fei   Dong, Ting-wei   Zhuang, Ming-yan   Wu, Yi-zhu   Mao, Yu-nung   Ran, Xiao-wen   Assignee: National Chiao Tung University   IPC: G01N27/403 Abstract: A gas detector is configured to be used with an electrical detector. The gas detector includes an electrode unit for being electrically connected to the electrical detector, and a sensing unit. The electrode unit includes a first electrode layer and a second electrode layer spaced from the first electrode layer. The second electrode layer includes two opposite electrode surfaces and is formed with a plurality of through holes penetrating through the electrode surfaces. The sensing unit includes a sensing layer connected to the first electrode layer and the second electrode layer and configured to interact with the gas under test. The sensing layer includes at least one sensing material having a functional group, wherein the functional group is selected from one of a fluorenyl-based group, a fluorenyl-based and triphenylamine-based group, a phenylene vinylene-based group, and a dithiophenebenzodithiophenyl-based and thioenothiophenyl -based group.
131
TW201725140A
Vehicle front end beam module and assembling method thereof
Publication/Patent Number: TW201725140A Publication Date: 2017-07-16 Application Number: 105100091 Filing Date: 2016-01-04 Inventor: Lin yu ting   Assignee: Metal Industries Research & Development Centre   IPC: B62D21/09 Abstract: A vehicle front end beam module includes two front end beams
132
TWM541794U
Dietary management tableware set
Publication/Patent Number: TWM541794U Publication Date: 2017-05-21 Application Number: 105216613 Filing Date: 2016-11-01 Inventor: Lin yu ting   Assignee: CHENG SHIU UNIVERSITY   IPC: A47G19/02
133
TWI571587B
Modular connector apparatus
Publication/Patent Number: TWI571587B Publication Date: 2017-02-21 Application Number: 104140576 Filing Date: 2015-12-03 Inventor: Lin yu ting   Assignee: METAL INDUSTRIES RESEARCHAND DEVELOPMENT CENTRE   IPC: B62D23/00 Abstract: A modular connector apparatus comprises a limit unit which includes a plurality of grooves
134
TW201721045A
Modular connector apparatus
Publication/Patent Number: TW201721045A Publication Date: 2017-06-16 Application Number: 104140576 Filing Date: 2015-12-03 Inventor: Lin yu ting   Assignee: METAL INDUSTRIES RESEARCHAND DEVELOPMENT CENTRE   IPC: B62D23/00 Abstract: A modular connector apparatus comprises a limit unit which includes a plurality of grooves
135
TW201720674A
Mecanum wheel apparatus
Publication/Patent Number: TW201720674A Publication Date: 2017-06-16 Application Number: 104140575 Filing Date: 2015-12-03 Inventor: Lin, Yu Ting   Yang, Kuang Shine   Jow, Yun Chen   Assignee: METAL INDUSTRIES RESEARCHAND DEVELOPMENT CENTRE   IPC: B60B19/00 Abstract: A mecanum wheel apparatus includes a drive wheel unit
136
TW201719995A
Ring structure and space frame
Publication/Patent Number: TW201719995A Publication Date: 2017-06-01 Application Number: 104137907 Filing Date: 2015-11-17 Inventor: Lin yu ting   Chiu, Chih-ming   Yang, Kuang-shine   Assignee: Metal Industries Research & Development Centre   IPC: H02G3/04 Abstract: A ring structure and a space frame are described. The ring structure is suitable to be disposed in a space frame and to position at least one wire in the space frame. The ring structure includes an elastic main body
137
TWI572105B
Ring structure and space frame
Publication/Patent Number: TWI572105B Publication Date: 2017-02-21 Application Number: 104137907 Filing Date: 2015-11-17 Inventor: Lin yu ting   Chiu, Chih-ming   Yang, Kuang-shine   Assignee: Metal Industries Research & Development Centre   IPC: H02G3/04 Abstract: A ring structure and a space frame are described. The ring structure is suitable to be disposed in a space frame and to position at least one wire in the space frame. The ring structure includes an elastic main body
138
TWI564951B
Etching device and etching method
Publication/Patent Number: TWI564951B Publication Date: 2017-01-01 Application Number: 103137682 Filing Date: 2014-10-30 Inventor: Lin yu ting   Lin, Chun-te   Wu, Chia-ming   Assignee: Mosel Vitelic Inc.   IPC: H01L21/306 Abstract: An etching device includes a tank and a waving device. The tank includes an accommodating space for loading a chemical acid and at least one wafer which is immersed in the chemical acid. The waving device is movably disposed in the tank for reciprocating motion
139
TWI580546B
Apparatus For Die Trial
Publication/Patent Number: TWI580546B Publication Date: 2017-05-01 Application Number: 105139178 Filing Date: 2016-11-29 Inventor: Lin yu ting   Hsieh, Ching-hua   Tsai, Hsing-chih   Assignee: Metal Industries Research and Development Centre   IPC: B29C33/20
140
TWI602988B
Adjustable bypass valve of Stirling engine
Publication/Patent Number: TWI602988B Publication Date: 2017-10-21 Application Number: 102116847 Filing Date: 2013-05-13 Inventor: Lin, Yu Ting   Ma, Chuang   Cheng, Chin Hsiang   Yang, Hang Suin   Ko, Yi Long   Chou, Ping Yi   Assignee: National Cheng Kung University   MARKETECH INTERNATIONAL CORP.   IPC: F02G1/053 Abstract: Provided is an adjustable bypass valve of a Stirling engine
Total 26 pages