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121 | US10153203B2 |
Methods for forming metal layers in openings and apparatus for forming same
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Publication/Patent Number: US10153203B2 | Publication Date: 2018-12-11 | Application Number: 15/665,957 | Filing Date: 2017-08-01 | Inventor： Wang, Yu-sheng Lin yu ting Hsu, Hung-chang Liu, Hsiao-ping Lu, Hung Pin Lin, Yuan Wen | Assignee: Taiwan Semiconductor Manufacturing Company, Ltd. | IPC: H01L21/768 | Abstract: A method includes forming an Inter-layer Dielectric (ILD) having a portion at a same level as a metal gate of a transistor. The ILD and the metal gate are parts of a wafer. The ILD is etched to form a contact opening. The wafer is placed into a PVD tool, with a metal target in the PVD tool. The metal target has a first spacing from a magnet over the metal target, and a second spacing from the wafer. A ratio of the first spacing to the second spacing is greater than about 0.02. A metal layer is deposited on the wafer, with the metal layer having a bottom portion in the contact opening, and a sidewall portion in the contact opening. An anneal is performed to react the bottom portion of the metal layer with the source/drain region to form a silicide region. | |||
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122 | US2018315647A1 |
Semiconductor Device and Method
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Publication/Patent Number: US2018315647A1 | Publication Date: 2018-11-01 | Application Number: 15/583,789 | Filing Date: 2017-05-01 | Inventor： Wang, Yu-sheng Hung, Chi-cheng Su, Ching-hwanq Ou, Yang Liang-yueh Tsai, Ming-hsing Lin yu ting | Assignee: Taiwan Semiconductor Manufacturing Company, Ltd. | IPC: H01L21/768 | Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer. | |||
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123 | US2018151429A1 |
Methods for Forming Metal Layers in Openings and Apparatus for Forming Same
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Publication/Patent Number: US2018151429A1 | Publication Date: 2018-05-31 | Application Number: 15/665,957 | Filing Date: 2017-08-01 | Inventor： Lin, Yuan Wen Lu, Hung Pin Liu, Hsiao-ping Hsu, Hung-chang Lin yu ting Wang, Yu-sheng | Assignee: Taiwan Semiconductor Manufacturing Company, Ltd. | IPC: H01L21/285 | Abstract: A method includes forming an Inter-layer Dielectric (ILD) having a portion at a same level as a metal gate of a transistor. The ILD and the metal gate are parts of a wafer. The ILD is etched to form a contact opening. The wafer is placed into a PVD tool, with a metal target in the PVD tool. The metal target has a first spacing from a magnet over the metal target, and a second spacing from the wafer. A ratio of the first spacing to the second spacing is greater than about 0.02. A metal layer is deposited on the wafer, with the metal layer having a bottom portion in the contact opening, and a sidewall portion in the contact opening. An anneal is performed to react the bottom portion of the metal layer with the source/drain region to form a silicide region. | |||
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124 | TW201842571A |
A method of forming a semiconductor device
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Publication/Patent Number: TW201842571A | Publication Date: 2018-12-01 | Application Number: 106127450 | Filing Date: 2017-08-14 | Inventor： Lin yu ting Tsai, Ming-hsing Wang, Yu-sheng Hung, Chi-cheng Su, Ching-hwanq Ouyang, Liang-yueh | Assignee: Taiwan Semiconductor Manufacturing Co., Ltd. | IPC: H01L21/20 | Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer. | |||
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125 | US2018350924A1 |
CONTACT SILICIDE HAVING A NON-ANGULAR PROFILE
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Publication/Patent Number: US2018350924A1 | Publication Date: 2018-12-06 | Application Number: 16/042,287 | Filing Date: 2018-07-23 | Inventor： Chen, Sheng-wen Yu-shen, Shih Lo, Chia Ping Lin, Yan-hua Tan, Lun-kuang Lin yu ting | Assignee: Taiwan Semiconductor Manufacturing Company, Ltd. | IPC: H01L29/417 | Abstract: A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be a cold implantation process. | |||
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126 | US10032876B2 |
Contact silicide having a non-angular profile
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Publication/Patent Number: US10032876B2 | Publication Date: 2018-07-24 | Application Number: 14/209,374 | Filing Date: 2014-03-13 | Inventor： Lin yu ting Tan, Lun-kuang Lin, Yan-hua Lo, Chia Ping Yu-shen, Shih Chen, Sheng-wen | Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | IPC: H01L29/78 | Abstract: A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be a cold implantation process. | |||
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127 | DE102017127201A1 |
HALBLEITER-BAUELEMENT UND VERFAHREN
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Publication/Patent Number: DE102017127201A1 | Publication Date: 2018-11-08 | Application Number: 102017127201 | Filing Date: 2017-11-19 | Inventor： Lin yu ting Tsai, Ming-hsing Wang, Yu-sheng Hung, Chi-cheng Su, Ching-hwanq Yang, Liang-yueh Ou | Assignee: Taiwan Semiconductor Manufacturing Co., Ltd. | IPC: H01L21/336 | Abstract: Ein Verfahren weist die folgenden Schritte auf: Herstellen einer ersten Öffnung in einer dielektrischen Schicht über einem Substrat; Bedecken von Seitenwänden und einem Boden der ersten Öffnung mit einer leitfähigen Sperrschicht; und Abscheiden einer Keim-Schicht über der leitfähigen Sperrschicht. Das Verfahren umfasst weiterhin das Behandeln der Keim-Schicht mit einem Plasma-Prozess; und das Füllen der ersten Öffnung mit einem leitfähigen Material nach dem Behandeln der Keim-Schicht. | |||
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128 | US10157785B2 |
Semiconductor device and method
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Publication/Patent Number: US10157785B2 | Publication Date: 2018-12-18 | Application Number: 15/583,789 | Filing Date: 2017-05-01 | Inventor： Wang, Yu-sheng Hung, Chi-cheng Su, Ching-hwanq Ou, Yang Liang-yueh Tsai, Ming-hsing Lin yu ting | Assignee: Taiwan Semiconductor Manufacturing Company, Ltd. | IPC: H01L21/768 | Abstract: A method includes forming a first opening in a dielectric layer over a substrate, lining sidewalls and a bottom of the first opening with a conductive barrier layer, and depositing a seed layer over the conductive barrier layer. The method further includes treating the seed layer with a plasma process, and filling the first opening with a conductive material after the treating the seed layer. | |||
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129 | TWI615611B |
Gas detector including an electrode unit electrically connected to an electrical detector, and a sensing unit
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Publication/Patent Number: TWI615611B | Publication Date: 2018-02-21 | Application Number: 105142197 | Filing Date: 2016-12-20 | Inventor： Wang, Chien-lung Lin yu ting Zhang, Liang-you Meng, Xin-fei Dong, Ting-wei Zhuang, Ming-yan Wu, Yi-zhu Mao, Yu-nung Ran, Xiao-wen | Assignee: National Chiao Tung University | IPC: G01N27/403 | Abstract: A gas detector is configured to be used with an electrical detector. The gas detector includes an electrode unit for being electrically connected to the electrical detector, and a sensing unit. The electrode unit includes a first electrode layer and a second electrode layer spaced from the first electrode layer. The second electrode layer includes two opposite electrode surfaces and is formed with a plurality of through holes penetrating through the electrode surfaces. The sensing unit includes a sensing layer connected to the first electrode layer and the second electrode layer and configured to interact with the gas under test. The sensing layer includes at least one sensing material having a functional group, wherein the functional group is selected from one of a fluorenyl-based group, a fluorenyl-based and triphenylamine-based group, a phenylene vinylene-based group, and a dithiophenebenzodithiophenyl-based and thioenothiophenyl -based group. | |||
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130 | TW201809654A |
Gas detector including an electrode unit electrically connected to an electrical detector, and a sensing unit
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Publication/Patent Number: TW201809654A | Publication Date: 2018-03-16 | Application Number: 105142197 | Filing Date: 2016-12-20 | Inventor： Wang, Chien-lung Lin yu ting Zhang, Liang-you Meng, Xin-fei Dong, Ting-wei Zhuang, Ming-yan Wu, Yi-zhu Mao, Yu-nung Ran, Xiao-wen | Assignee: National Chiao Tung University | IPC: G01N27/403 | Abstract: A gas detector is configured to be used with an electrical detector. The gas detector includes an electrode unit for being electrically connected to the electrical detector, and a sensing unit. The electrode unit includes a first electrode layer and a second electrode layer spaced from the first electrode layer. The second electrode layer includes two opposite electrode surfaces and is formed with a plurality of through holes penetrating through the electrode surfaces. The sensing unit includes a sensing layer connected to the first electrode layer and the second electrode layer and configured to interact with the gas under test. The sensing layer includes at least one sensing material having a functional group, wherein the functional group is selected from one of a fluorenyl-based group, a fluorenyl-based and triphenylamine-based group, a phenylene vinylene-based group, and a dithiophenebenzodithiophenyl-based and thioenothiophenyl -based group. | |||
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131 | TW201725140A |
Vehicle front end beam module and assembling method thereof
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Publication/Patent Number: TW201725140A | Publication Date: 2017-07-16 | Application Number: 105100091 | Filing Date: 2016-01-04 | Inventor： Lin yu ting | Assignee: Metal Industries Research & Development Centre | IPC: B62D21/09 | Abstract: A vehicle front end beam module includes two front end beams | |||
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132 | TWM541794U |
Dietary management tableware set
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Publication/Patent Number: TWM541794U | Publication Date: 2017-05-21 | Application Number: 105216613 | Filing Date: 2016-11-01 | Inventor： Lin yu ting | Assignee: CHENG SHIU UNIVERSITY | IPC: A47G19/02 | ||||
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133 | TWI571587B |
Modular connector apparatus
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Publication/Patent Number: TWI571587B | Publication Date: 2017-02-21 | Application Number: 104140576 | Filing Date: 2015-12-03 | Inventor： Lin yu ting | Assignee: METAL INDUSTRIES RESEARCHAND DEVELOPMENT CENTRE | IPC: B62D23/00 | Abstract: A modular connector apparatus comprises a limit unit which includes a plurality of grooves | |||
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134 | TW201721045A |
Modular connector apparatus
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Publication/Patent Number: TW201721045A | Publication Date: 2017-06-16 | Application Number: 104140576 | Filing Date: 2015-12-03 | Inventor： Lin yu ting | Assignee: METAL INDUSTRIES RESEARCHAND DEVELOPMENT CENTRE | IPC: B62D23/00 | Abstract: A modular connector apparatus comprises a limit unit which includes a plurality of grooves | |||
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135 | TW201720674A |
Mecanum wheel apparatus
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Publication/Patent Number: TW201720674A | Publication Date: 2017-06-16 | Application Number: 104140575 | Filing Date: 2015-12-03 | Inventor： Lin, Yu Ting Yang, Kuang Shine Jow, Yun Chen | Assignee: METAL INDUSTRIES RESEARCHAND DEVELOPMENT CENTRE | IPC: B60B19/00 | Abstract: A mecanum wheel apparatus includes a drive wheel unit | |||
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136 | TW201719995A |
Ring structure and space frame
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Publication/Patent Number: TW201719995A | Publication Date: 2017-06-01 | Application Number: 104137907 | Filing Date: 2015-11-17 | Inventor： Lin yu ting Chiu, Chih-ming Yang, Kuang-shine | Assignee: Metal Industries Research & Development Centre | IPC: H02G3/04 | Abstract: A ring structure and a space frame are described. The ring structure is suitable to be disposed in a space frame and to position at least one wire in the space frame. The ring structure includes an elastic main body | |||
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137 | TWI572105B |
Ring structure and space frame
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Publication/Patent Number: TWI572105B | Publication Date: 2017-02-21 | Application Number: 104137907 | Filing Date: 2015-11-17 | Inventor： Lin yu ting Chiu, Chih-ming Yang, Kuang-shine | Assignee: Metal Industries Research & Development Centre | IPC: H02G3/04 | Abstract: A ring structure and a space frame are described. The ring structure is suitable to be disposed in a space frame and to position at least one wire in the space frame. The ring structure includes an elastic main body | |||
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138 | TWI564951B |
Etching device and etching method
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Publication/Patent Number: TWI564951B | Publication Date: 2017-01-01 | Application Number: 103137682 | Filing Date: 2014-10-30 | Inventor： Lin yu ting Lin, Chun-te Wu, Chia-ming | Assignee: Mosel Vitelic Inc. | IPC: H01L21/306 | Abstract: An etching device includes a tank and a waving device. The tank includes an accommodating space for loading a chemical acid and at least one wafer which is immersed in the chemical acid. The waving device is movably disposed in the tank for reciprocating motion | |||
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139 | TWI580546B |
Apparatus For Die Trial
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Publication/Patent Number: TWI580546B | Publication Date: 2017-05-01 | Application Number: 105139178 | Filing Date: 2016-11-29 | Inventor： Lin yu ting Hsieh, Ching-hua Tsai, Hsing-chih | Assignee: Metal Industries Research and Development Centre | IPC: B29C33/20 | ||||
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140 | TWI602988B |
Adjustable bypass valve of Stirling engine
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Publication/Patent Number: TWI602988B | Publication Date: 2017-10-21 | Application Number: 102116847 | Filing Date: 2013-05-13 | Inventor： Lin, Yu Ting Ma, Chuang Cheng, Chin Hsiang Yang, Hang Suin Ko, Yi Long Chou, Ping Yi | Assignee: National Cheng Kung University MARKETECH INTERNATIONAL CORP. | IPC: F02G1/053 | Abstract: Provided is an adjustable bypass valve of a Stirling engine |
3.Current Quota