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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
1
EP3238283B1
PHASE-CHANGE MEMORY CELL IMPLANT FOR DUMMY ARRAY LEAKAGE REDUCTION
Publication/Patent Number: EP3238283B1 Publication Date: 2020-05-06 Application Number: 15873958.1 Filing Date: 2015-11-20 Inventor: Liu, Lequn J.   Russo, Ugo   Hineman, Max F.   Assignee: Intel Corporation   IPC: H01L27/24
2
US10566364B2
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: US10566364B2 Publication Date: 2020-02-18 Application Number: 16/276,561 Filing Date: 2019-02-14 Inventor: Zheng, Yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
3
US2020312953A1
DRAM Capacitor Module
Publication/Patent Number: US2020312953A1 Publication Date: 2020-10-01 Application Number: 16/826,597 Filing Date: 2020-03-23 Inventor: Mitra, Uday   Freed, Regina   Hwang, Ho-yung David   Natarajan, Sanjay   Liu, Lequn   Assignee: Micromaterials LLC   IPC: H01L49/02 Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments relate to the formation of self-aligned DRAM capacitors. More particularly, certain embodiments relate to the formation of self-aligned DRAM capacitors utilizing the formation of self-aligned growth pillars. The pillars lead to greater capacitor heights, increase critical dimension uniformity, and self-aligned bottom and top contacts.
4
US2020251151A1
3D DRAM STRUCTURE WITH HIGH MOBILITY CHANNEL
Publication/Patent Number: US2020251151A1 Publication Date: 2020-08-06 Application Number: 16/779,830 Filing Date: 2020-02-03 Inventor: Kang, Chang Seok   Kitajima, Tomohiko   Lee, Gill Yong   Natarajan, Sanjay   Kang, Sung-kwan   Liu, Lequn   Assignee: Applied Materials, Inc.   IPC: G11C5/06 Abstract: Memory devices are described. The memory devices include a plurality of bit lines extending through a stack of alternating memory layers and dielectric layers. Each of the memory layers comprises a single crystalline-like silicon layer and includes a first word line, a second word line, a first capacitor, and a second capacitor. Methods of forming stacked memory devices are also described.
5
TW201942646A
Display device and methods of operation
Publication/Patent Number: TW201942646A Publication Date: 2019-11-01 Application Number: 108110897 Filing Date: 2019-03-28 Inventor: Liu, Lequn   Chan, Anson   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: G02B27/01 Abstract: A display system includes a display positioned to show images to a user, and a sensor positioned to monitor a gaze location of an eye of the user. A controller is coupled to the display and the sensor, and the controller includes logic that causes the display system to perform operations. For example, the controller may receive the gaze location information from the sensor, and determine the gaze location of the eye. First resolution image data is output to the display for a first region in the images. Second resolution image data is output to the display for a second region in the images. And third resolution image data is output to the display for a third region in the images.
6
US2019302881A1
DISPLAY DEVICE AND METHODS OF OPERATION
Publication/Patent Number: US2019302881A1 Publication Date: 2019-10-03 Application Number: 15/940,784 Filing Date: 2018-03-29 Inventor: Chan, Anson   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: G06F3/01 Abstract: A display system includes a display positioned to show images to a user, and a sensor positioned to monitor a gaze location of an eye of the user. A controller is coupled to the display and the sensor, and the controller includes logic that causes the display system to perform operations. For example, the controller may receive the gaze location information from the sensor, and determine the gaze location of the eye. First resolution image data is output to the display for a first region in the images. Second resolution image data is output to the display for a second region in the images. And third resolution image data is output to the display for a third region in the images.
7
US2019346604A1
Eye wear visually enhancing laser spot and laser line
Publication/Patent Number: US2019346604A1 Publication Date: 2019-11-14 Application Number: 16/501,587 Filing Date: 2019-05-04 Inventor: Jutamulia, Suganda   Liu, Lequn   Assignee: Jutamulia, Suganda   Liu, Lequn   IPC: G02B5/28 Abstract: An eye wear comprises an optical filter disposed in front of an eye. The optical filter has a transmittance function of wavelength comprising a transmittance peak having a peak transmittance and a transmittance bandwidth. A transmittance outside the transmittance peak is at a lower level transmittance, wherein a ratio of the lower level transmittance to the peak transmittance is less than unity. The transmittance peak is at a central wavelength of a laser that emits laser light forming one of a laser spot and a laser line. The transmittance bandwidth is larger than a bandwidth of the laser light emitted by the laser. The laser spot or the laser line formed by the laser light emitted by the laser is viewed through the eye wear.
8
TW201944588A
Methods and systems for displaying high dynamic range images
Publication/Patent Number: TW201944588A Publication Date: 2019-11-16 Application Number: 108113106 Filing Date: 2019-04-15 Inventor: Jutamulia, Suganda   Tsau, Guannho   Liu, Lequn   Geng, Kenny   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H04N5/355 Abstract: Methods and systems for displaying high dynamic range images are provided. A display system comprises a first display for providing a first value and a second display for providing a second value. A displayed image is a product of multiplication of the first value provided by the first display and the second value provided by the second display. The first display is a transmissive display comprising: a first glass substrate, an unpatterned ITO layer, an LC layer, a patterned ITO layer having isolated electrodes, and a second glass substrate. The second display is a reflective LCOS display comprising: a glass substrate, an unpatterned ITO layer, an LC layer, a metal electrode layer, and a silicon substrate.
9
US2019324306A1
METHODS AND SYSTEMS FOR DISPLAYING HIGH DYNAMIC RANGE IMAGES
Publication/Patent Number: US2019324306A1 Publication Date: 2019-10-24 Application Number: 15/960,376 Filing Date: 2018-04-23 Inventor: Jutamulia, Suganda   Liu, Lequn   Geng, Kenny   Tsau, Guannho   Assignee: OmniVision Technologies, Inc.   IPC: G02F1/1347 Abstract: A display system comprises a first display for providing a first value and a second display for providing a second value. The displayed image is a product of multiplication of the first value provided by the first display and the second value provided by the second display. The first display is a transmissive display comprises: a first glass substrate, an unpatterned ITO layer, a LC layer, a patterned ITO layer having isolated electrodes, and a second glass substrate. The second display is a reflective LCOS comprises: a glass substrate, an unpatterned ITO layer, a LC layer, a metal electrode layer, and a silicon substrate.
10
US10437120B1
Methods and systems for displaying high dynamic range images
Publication/Patent Number: US10437120B1 Publication Date: 2019-10-08 Application Number: 15/960,376 Filing Date: 2018-04-23 Inventor: Jutamulia, Suganda   Liu, Lequn   Geng, Kenny   Tsau, Guannho   Assignee: OmniVision Technologies, Inc.   IPC: G02F1/1347 Abstract: A display system comprises a first display for providing a first value and a second display for providing a second value. The displayed image is a product of multiplication of the first value provided by the first display and the second value provided by the second display. The first display is a transmissive display comprises: a first glass substrate, an unpatterned ITO layer, a LC layer, a patterned ITO layer having isolated electrodes, and a second glass substrate. The second display is a reflective LCOS comprises: a glass substrate, an unpatterned ITO layer, a LC layer, a metal electrode layer, and a silicon substrate.
11
US10290670B2
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: US10290670B2 Publication Date: 2019-05-14 Application Number: 15/195,926 Filing Date: 2016-06-28 Inventor: Zheng, Yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
12
US2019181173A1
RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD
Publication/Patent Number: US2019181173A1 Publication Date: 2019-06-13 Application Number: 16/276,561 Filing Date: 2019-02-14 Inventor: Zheng, Yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
13
US10317733B2
Method to make LCOS oxide alignment layer by offset print
Publication/Patent Number: US10317733B2 Publication Date: 2019-06-11 Application Number: 15/334,488 Filing Date: 2016-10-26 Inventor: Zhang, Ming   Qian, Yin   Weng, Libo   Cellek, Oray Orkun   Tai, Dyson Hsin-chih   Liu, Lequn   Massetti, Dominic   Assignee: OmniVision Technologies, Inc.   IPC: G02F1/13 Abstract: An alignment layer for a liquid crystal on silicon (LCOS) display includes a nano-particle layer. In a particular embodiment the nano-particle layer includes a lower nano-layer and an upper nano-layer, each formed onto oxide layers of the LCOS display. In a more particular embodiment, the lower nano-layer and the upper nano-layer are offset printed onto the oxide layers.
14
TW201813068A
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: TW201813068A Publication Date: 2018-04-01 Application Number: 106120973 Filing Date: 2017-06-21 Inventor: Chen, Gang   Mao, Duli   Tai, Dyson Hsinchih   Zheng, Yuanwei   Liu, Lequn   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
15
US2018113336A1
Method to Make LCOS Oxide Alignment Layer by Offset Print
Publication/Patent Number: US2018113336A1 Publication Date: 2018-04-26 Application Number: 15/334,488 Filing Date: 2016-10-26 Inventor: Massetti, Dominic   Liu, Lequn   Tai, Dyson Hsin-chih   Cellek, Oray Orkun   Weng, Libo   Qian, Yin   Zhang, Ming   Assignee: OmniVision Technologies, Inc.   IPC: G02F1/1343 Abstract: An alignment layer for a liquid crystal on silicon (LCOS) display includes a nano-particle layer. In a particular embodiment the nano-particle layer includes a lower nano-layer and an upper nano-layer, each formed onto oxide layers of the LCOS display. In a more particular embodiment, the lower nano-layer and the upper nano-layer are offset printed onto the oxide layers.
16
US2017207269A1
IMAGE SENSOR CONTACT ENHANCEMENT
Publication/Patent Number: US2017207269A1 Publication Date: 2017-07-20 Application Number: 14/995,833 Filing Date: 2016-01-14 Inventor: Liu, Lequn   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor includes a photodiode disposed in semiconductor material. The photodiode is one of a plurality of photodiodes formed in an array. The image sensor also includes a floating diffusion disposed in the semiconductor material, and the floating diffusion is disposed adjacent to the photodiode in the plurality of photodiodes. A transfer gate is disposed to transfer image charge generated in the individual photodiode into the floating diffusion. Peripheral circuitry is disposed in the semiconductor material and includes a first electrical contact to the semiconductor material. A first silicide layer is disposed on the floating diffusion, a second silicide layer is disposed on the transfer gate, and a third silicide layer is disposed on the first electrical contact to the semiconductor material.
17
US2017287966A1
Image Sensor Contact Enhancement
Publication/Patent Number: US2017287966A1 Publication Date: 2017-10-05 Application Number: 15/624,418 Filing Date: 2017-06-15 Inventor: Liu, Lequn   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A method of image sensor fabrication includes providing a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material. The method also includes providing peripheral circuitry disposed in the semiconductor material, including a first electrical contact to the semiconductor material, and forming a transfer gate disposed to transfer image charge from the photodiode to the floating diffusion. An isolation layer is deposited on a surface of the semiconductor material, and contact holes are etched in the isolation layer. A first silicide layer disposed on the floating diffusion, a second silicide layer disposed on the transfer gate, and a third silicide layer disposed on the first electrical contact to the semiconductor material are formed in the contact holes by depositing a silicon layer in the contact holes and metalizing the silicon layer.
18
TW201733102A
Image sensor and method of image sensor fabrication
Publication/Patent Number: TW201733102A Publication Date: 2017-09-16 Application Number: 105134234 Filing Date: 2016-10-24 Inventor: Liu, Lequn   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor includes a photodiode disposed in semiconductor material. The photodiode is one of a plurality of photodiodes formed in an array. The image sensor also includes a floating diffusion disposed in the semiconductor material
19
TWI596661B
Phase-change memory cell implant for dummy array leakage reduction
Publication/Patent Number: TWI596661B Publication Date: 2017-08-21 Application Number: 104138579 Filing Date: 2015-11-20 Inventor: Hineman, Max F   Russo, Ugo   Liu, Lequn J   Assignee: Intel Corporation   IPC: G11C13/00 Abstract: Embodiments of the present disclosure describe phase-change memory cell implant for dummy array leakage reduction. In an embodiment
20
EP3238283A1
PHASE-CHANGE MEMORY CELL IMPLANT FOR DUMMY ARRAY LEAKAGE REDUCTION
Publication/Patent Number: EP3238283A1 Publication Date: 2017-11-01 Application Number: 15873958.1 Filing Date: 2015-11-20 Inventor: Liu, Lequn J   Russo, Ugo   Hineman, Max F   Assignee: INTEL CORPORATION   IPC: H01L45/00