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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
US10586825B2
Self-alignment of a pad and ground in an image sensor
Publication/Patent Number: US10586825B2 Publication Date: 2020-03-10 Application Number: 16/242,924 Filing Date: 2019-01-08 Inventor: Wang, Qin   Chen, Gang   Mao duli   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/148 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.
2
US2020099878A1
CMOS IMAGE SENSOR WITH MULTIPLE STAGE TRANSFER GATE
Publication/Patent Number: US2020099878A1 Publication Date: 2020-03-26 Application Number: 16/141,584 Filing Date: 2018-09-25 Inventor: Chen, Gang   Mao duli   Tai, Dyson   Grant, Lindsay   Assignee: OmniVision Technologies, Inc.   IPC: H04N5/376 Abstract: An image sensor pixel comprises a first charge storage node configured to have a first charge storage electric potential; a second charge storage node configured to have a second charge storage electric potential and receive charge from the first charge storage node, wherein the second charge storage electric potential is greater than the first charge storage electric potential; and a transfer circuit coupled between the first and the second charge storage nodes, wherein the transfer circuit comprises at least three transfer regions, wherein: a first transfer region is proximate to the first charge storage node and configured to have a first transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; a second transfer region is coupled between the first and a third transfer region and configured to have a second transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; and the third transfer region is proximate to the third charge storage node and configured to have a third transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential. Charges are fully transferred from the first charge storage node to the second charge storage node after a plurality of transfer signal pulses.
3
US10734434B2
Vertical overflow drain combined with vertical transistor
Publication/Patent Number: US10734434B2 Publication Date: 2020-08-04 Application Number: 15/984,136 Filing Date: 2018-05-18 Inventor: Zheng, Yuanwei   Chen, Gang   Mao duli   Tai, Dyson   Grant, Lindsay   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.
4
US10559615B2
Methods for high-dynamic-range color imaging
Publication/Patent Number: US10559615B2 Publication Date: 2020-02-11 Application Number: 15/943,651 Filing Date: 2018-04-02 Inventor: Lu, Chen-wei   Yang, Dajiang   Cellek, Oray Orkun   Mao duli   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A method for manufacturing a high-dynamic-range color image sensor includes (a) depositing a color filter layer on a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, to form (i) a plurality of first color filters above a first subset of each of the plurality of first pixels and the plurality of second pixels and (ii) a plurality of second color filters above a second subset of each of the plurality of first pixels and the plurality of second pixels, wherein thickness of the second color filters exceeds thickness of the first color filters, and (b) depositing, on the color filter layer, a dynamic-range extending layer including grey filters above the second pixels to attenuate light propagating toward the second pixels, combined thickness of the color filter layer and the dynamic-range extending layer being uniform across the photosensitive pixel array.
5
US10687003B2
Linear-logarithmic image sensor
Publication/Patent Number: US10687003B2 Publication Date: 2020-06-16 Application Number: 15/228,874 Filing Date: 2016-08-04 Inventor: Mabuchi, Keiji   Tai, Dyson H.   Cellek, Oray Orkun   Mao duli   Manabe, Sohei   Assignee: OmniVision Technologies, Inc.   IPC: H04N5/355 Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.
6
US10582178B2
Systems and methods for active depth imager with background subtract
Publication/Patent Number: US10582178B2 Publication Date: 2020-03-03 Application Number: 15/341,374 Filing Date: 2016-11-02 Inventor: Yang, Zheng   Funatsu, Eiichi   Manabe, Sohei   Mabuchi, Keiji   Yang, Dajiang   Mao duli   Zhang, Bowei   Assignee: OmniVision Technologies, Inc.   IPC: H04N13/00 Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.
7
US10566377B2
Self-aligned optical grid on image sensor
Publication/Patent Number: US10566377B2 Publication Date: 2020-02-18 Application Number: 16/130,309 Filing Date: 2018-09-13 Inventor: Wang, Xin   Yang, Dajing   Wang, Qin   Mao duli   Tai, Dyson Hsin-chih   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.
8
US10566364B2
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: US10566364B2 Publication Date: 2020-02-18 Application Number: 16/276,561 Filing Date: 2019-02-14 Inventor: Zheng, Yuanwei   Chen, Gang   Mao duli   Tai, Dyson H.   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
9
US10644057B2
Source follower contact
Publication/Patent Number: US10644057B2 Publication Date: 2020-05-05 Application Number: 16/150,135 Filing Date: 2018-10-02 Inventor: Wang, Xin   Yang, Dajiang   Ma, Siguang   Mabuchi, Keiji   Phan, Bill   Mao duli   Tai, Dyson   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.
10
US2020105807A1
MULTI-THICKNESS GATE DIELECTRIC
Publication/Patent Number: US2020105807A1 Publication Date: 2020-04-02 Application Number: 16/149,544 Filing Date: 2018-10-02 Inventor: Chen, Gang   Zheng, Yuanwei   Wang, Qin   Yang, Cunyu   Chen, Guannan   Mao duli   Tai, Dyson   Grant, Lindsay   Webster, Eric   Hu, Sing-chung   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
11
US2020235158A1
GATE MODULATION WITH INDUCTOR
Publication/Patent Number: US2020235158A1 Publication Date: 2020-07-23 Application Number: 16/255,194 Filing Date: 2019-01-23 Inventor: Yi, Xianmin   Yao, Jingming   Cizdziel, Philip   Webster, Eric   Mao duli   Lin, Zhiqiang   Landgraf, Jens   Mabuchi, Keiji   Johnson, Kevin   Manabe, Sohei   Tai, Dyson H.   Grant, Lindsay   Fowler, Boyd   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.
12
US10462433B2
Image sensor with big and small pixels and method of manufacture
Publication/Patent Number: US10462433B2 Publication Date: 2019-10-29 Application Number: 15/967,678 Filing Date: 2018-05-01 Inventor: Chen, Gang   Mao duli   Tai, Dyson Hsin-chih   Assignee: OmniVision Technologies, Inc.   IPC: H04N9/083 Abstract: An image sensor includes a substrate, a first set of sensor pixels formed on the substrate, and a second set of sensor pixels formed on the substrate. The sensor pixels of the first set are arranged in rows and columns and are configured to detect light within a first range of wavelengths (e.g., white light). The sensor pixels of the second set are arranged in rows and columns and are each configured to detect light within one of a set of ranges of wavelengths (e.g., red, green, and blue). Each range of wavelengths of the set of ranges of wavelengths is a subrange of said first range of wavelengths, and each pixel of the second set of pixels is smaller than each pixel of the first set of pixels.
13
US2019165033A1
SELF-ALIGNMENT OF A PAD AND GROUND IN AN IMAGE SENSOR
Publication/Patent Number: US2019165033A1 Publication Date: 2019-05-30 Application Number: 16/242,924 Filing Date: 2019-01-08 Inventor: Wang, Qin   Chen, Gang   Mao duli   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.
14
US10211253B1
Self-alignment of a pad and ground in an image sensor
Publication/Patent Number: US10211253B1 Publication Date: 2019-02-19 Application Number: 15/826,276 Filing Date: 2017-11-29 Inventor: Wang, Qin   Chen, Gang   Mao duli   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.
15
TW201935678A
Image sensor
Publication/Patent Number: TW201935678A Publication Date: 2019-09-01 Application Number: 108117627 Filing Date: 2017-12-21 Inventor: Chen, Gang   Mao duli   Wang, Qin   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.
16
TW201901944A
Cmos image sensor with reduced cross talk
Publication/Patent Number: TW201901944A Publication Date: 2019-01-01 Application Number: 107101803 Filing Date: 2018-01-18 Inventor: Mabuchi, Keiji   Manabe, Sohei   Mao duli   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An imaging sensor pixel comprises a highly resistive N- doped semiconductor layer with a front side and a back side. At the front side, there are at least a light sensing region, a transfer gate adjacent to the light sensing region and a P-well region. The P-well region surrounds the light sensing region and the transfer gate region, and comprises at least a floating diffusion region and a first electrode outside of the floating diffusion region, wherein a first negative voltage is applied to the first electrode. The transfer gate couples between the light sensing region and the floating diffusion region. At the back side, there is a back side P+ doped layer comprising a second electrode formed on the back side P+ doped layer, wherein a second negative voltage is applied to the second electrode. The second negative voltage is more negative than the first negative voltage.
17
US10304891B2
Backside metal grid and metal pad simplification
Publication/Patent Number: US10304891B2 Publication Date: 2019-05-28 Application Number: 15/873,743 Filing Date: 2018-01-17 Inventor: Wang, Qin   Chen, Gang   Mao duli   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.
18
TWI647829B
Cmos image sensor with reduced cross talk
Publication/Patent Number: TWI647829B Publication Date: 2019-01-11 Application Number: 107101803 Filing Date: 2018-01-18 Inventor: Mabuchi, Keiji   Manabe, Sohei   Mao duli   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An imaging sensor pixel comprises a highly resistive N- doped semiconductor layer with a front side and a back side. At the front side, there are at least a light sensing region, a transfer gate adjacent to the light sensing region and a P-well region. The P-well region surrounds the light sensing region and the transfer gate region, and comprises at least a floating diffusion region and a first electrode outside of the floating diffusion region, wherein a first negative voltage is applied to the first electrode. The transfer gate couples between the light sensing region and the floating diffusion region. At the back side, there is a back side P+ doped layer comprising a second electrode formed on the back side P+ doped layer, wherein a second negative voltage is applied to the second electrode. The second negative voltage is more negative than the first negative voltage.
19
TWI664723B
Image senso
Publication/Patent Number: TWI664723B Publication Date: 2019-07-01 Application Number: 106145002 Filing Date: 2017-12-21 Inventor: Chen, Gang   Mao duli   Wang, Qin   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.
20
TW201933592A
Self-alignment of a pad and ground in an image sensor
Publication/Patent Number: TW201933592A Publication Date: 2019-08-16 Application Number: 107140181 Filing Date: 2018-11-13 Inventor: Chen, Gang   Mao duli   Wang, Qin   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.