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21 | WO2017139008A1 |
BROADBAND VISIBLE-SHORTWAVE INFRARED SPECTROMETER
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Publication/Patent Number: WO2017139008A1 | Publication Date: 2017-08-17 | Application Number: 2016064585 | Filing Date: 2016-12-02 | Inventor： Kim, Youngsik Na, Yeul Jung, Wooshik Kang, Juhyung Lee, Jae Hyung | Assignee: STRATIO, INC. STRATIO | IPC: A61B1/06 | Abstract: An apparatus for analyzing visible and shortwave infrared light includes an input aperture for receiving light that includes a visible wavelength component and a shortwave infrared wavelength component; a first set of one or more lenses configured to relay light from the input aperture; one or more dispersive optical elements configured to disperse light from the first set of one or more lenses; a second set of one or more lenses configured to focus the dispersed light from the one or more dispersive optical elements; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals that include electrical signals indicating intensity of the visible wavelength component and electrical signals indicating intensity of the shortwave infrared wavelength component. | |||
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22 | US2017195327A1 |
PEER-TO-PEER COMMUNICATION BASED ON DEVICE IDENTIFIERS
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Publication/Patent Number: US2017195327A1 | Publication Date: 2017-07-06 | Application Number: 15/468,027 | Filing Date: 2017-03-23 | Inventor： Lee, Jae Hyung Kim, Youngsik Na, Yeul Jung, Wooshik Bhattiprolu, Seema | Assignee: STRATIO, INC. STRATIO | IPC: H04L29/06 | Abstract: A server system receives from a first electronic device a first device identifier and network information of the first electronic device; subsequent to receiving the first device identifier and the network information of the first electronic device, receives from a second electronic device a second device identifier and network information of the second electronic device; in response to receiving from the second electronic device the second device identifier and the network information of the second electronic device, determines whether the first device identifier is associated with the second device identifier; and, in accordance with a determination that the first device identifier is associated with the second device identifier, sends to the second electronic device the network information of the first electronic device and/or sends to the first electronic device the network information of the second electronic device. | |||
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23 | US2017287706A1 |
Reduction of Surface Roughness in Epitaxially Grown Germanium by Controlled Thermal Oxidation
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Publication/Patent Number: US2017287706A1 | Publication Date: 2017-10-05 | Application Number: 15/624,603 | Filing Date: 2017-06-15 | Inventor： Jung, Woo-shik Na, Yeul Kim, Youngsik Lee, Jae Hyung Lee, Jin Hyung | Assignee: Stratio, Inc. | IPC: H01L21/02 | Abstract: Methods for reducing surface roughness of germanium are described herein. In some embodiments, the surface roughness is reduced by thermal oxidation of germanium. In some embodiments, the surface roughness is further reduced by controlling a rate of the thermal oxidation. In some embodiments, the surface roughness is reduced by thermal annealing. | |||
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24 | KR20170096134A |
REDUCTION OF SURFACE ROUGHNESS IN EPITAXIALLY GROWN GERMANIUM BY CONTROLLED THERMAL OXIDATION
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Publication/Patent Number: KR20170096134A | Publication Date: 2017-08-23 | Application Number: 20177018942 | Filing Date: 2015-12-15 | Inventor： Lee, Jae Hyung Kim, Youngsik Lee, Jin Hyung Na, Yeul Jung, Woo Shik | Assignee: STRATIO, INC. | IPC: H01L21/02 | Abstract: 본원에서는 게르마늄의 표면 거칠기를 감소시키기 위한 방법들이 개시되어 있다. 몇몇 실시형태에서 | |||
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25 | US9343608B2 |
Depletion-mode field-effect transistor-based phototransistor
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Publication/Patent Number: US9343608B2 | Publication Date: 2016-05-17 | Application Number: 14/461,038 | Filing Date: 2014-08-15 | Inventor： Na, Yeul Saraswat, Krishna C | Assignee: Board of Regents, The University of Texas System | IPC: H01L31/112 | Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon. | |||
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26 | US9378950B1 |
Methods for removing nuclei formed during epitaxial growth
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Publication/Patent Number: US9378950B1 | Publication Date: 2016-06-28 | Application Number: 15/051,362 | Filing Date: 2016-02-23 | Inventor： Lee, Jae Hyung Kim, Youngsik Na, Yeul Jung, Woo-shik | Assignee: STRATIO STRATIO INC. | IPC: H01L21/336 | Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures. | |||
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27 | US2016099372A1 |
Gate-controlled Charge Modulated Device for CMOS Image Sensors
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Publication/Patent Number: US2016099372A1 | Publication Date: 2016-04-07 | Application Number: 14/967,262 | Filing Date: 2015-12-11 | Inventor： Lee, Jae Hyung Na, Yeul Kim, Youngsik Jung, Woo-shik | Assignee: Stratio Inc. | IPC: H01L31/113 | Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region. | |||
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28 | KR20160021289A |
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS SENSORS
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Publication/Patent Number: KR20160021289A | Publication Date: 2016-02-24 | Application Number: 20167001437 | Filing Date: 2014-06-20 | Inventor： Lee, Jae Hyung Kim, Youngsik Na, Yeul Jung, Woo Shik | Assignee: STRATIO, INC. | IPC: H01L27/146 | Abstract: 광을 감지하는 디바이스는 제 1 타입의 도펀트로 도핑된 제 1 반도체 영역 및 제 2 타입의 도펀트로 도핑된 제 2 반도체 영역을 포함한다. 제 2 반도체 영역은 제 1 반도체 영역 위에 배치된다. 디바이스는 게이트 절연 층; 게이트 | |||
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29 | WO2016191371A1 |
METHODS FOR REMOVING NUCLEI FORMED DURING EPITAXIAL GROWTH
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Publication/Patent Number: WO2016191371A1 | Publication Date: 2016-12-01 | Application Number: 2016033783 | Filing Date: 2016-05-23 | Inventor： Jung, Woo-shik Kim, Youngsik Lee, Jae Hyung Na, Yeul | Assignee: STRATIO STRATIO, INC. | IPC: H01L21/02 | Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes | |||
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30 | EP3011594A2 |
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS IMAGE SENSORS
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Publication/Patent Number: EP3011594A2 | Publication Date: 2016-04-27 | Application Number: 14814462.9 | Filing Date: 2014-06-20 | Inventor： Lee, Jae Hyung Na, Yeul Kim, Youngsik Jung, Woo-shik | Assignee: Stratio, Inc. | IPC: H01L27/14 | ||||
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31 | WO2016100373A1 |
REDUCTION OF SURFACE ROUGHNESS IN EPITAXIALLY GROWN GERMANIUM BY CONTROLLED THERMAL OXIDATION
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Publication/Patent Number: WO2016100373A1 | Publication Date: 2016-06-23 | Application Number: 2015065869 | Filing Date: 2015-12-15 | Inventor： Jung, Woo-shik Lee, Jin Hyung Kim, Youngsik Na, Yeul Lee, Jae Hyung | Assignee: STRATIO, INC. | IPC: H01L21/02 | Abstract: Methods for reducing surface roughness of germanium are described herein. In some embodiments | |||
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32 | WO2016049558A1 |
PEER-TO-PEER COMMUNICATION BASED ON DEVICE IDENTIFIERS
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Publication/Patent Number: WO2016049558A1 | Publication Date: 2016-03-31 | Application Number: 2015052410 | Filing Date: 2015-09-25 | Inventor： Kim, Youngsik Na, Yeul Lee, Jae Hyung Jung, Wooshik Bhattiprolu, Seema | Assignee: STRATIO, INC. STRATIO | IPC: H04L9/32 | Abstract: A server system receives from a first electronic device a first device identifier and network information of the first electronic device; subsequent to receiving the first device identifier and the network information of the first electronic device | |||
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33 | WO2014205353A3 |
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS SENSORS
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Publication/Patent Number: WO2014205353A3 | Publication Date: 2015-02-19 | Application Number: 2014043421 | Filing Date: 2014-06-20 | Inventor： Jung, Woo-shik Kim, Youngsik Na, Yeul Lee, Jae Hyung | Assignee: STRATIO, INC. | IPC: H01L27/14 | Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate | |||
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34 | US2014363917A1 |
DEPLETION-MODE FIELD-EFFECT TRANSISTOR-BASED PHOTOTRANSISTOR
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Publication/Patent Number: US2014363917A1 | Publication Date: 2014-12-11 | Application Number: 14/461,038 | Filing Date: 2014-08-15 | Inventor： Na, Yeul Saraswat, Krishna C. | Assignee: The Board of Trustees of the Leland Stanford Junior University | IPC: H01L31/112 | Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon. | |||
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35 | US8896083B2 |
Depletion-mode field-effect transistor-based phototransitor
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Publication/Patent Number: US8896083B2 | Publication Date: 2014-11-25 | Application Number: 13/835,662 | Filing Date: 2013-03-15 | Inventor： Na, Yeul Saraswat, Krishna C. | Assignee: Board of Regents, The University of Texas System | IPC: H01L31/06 | Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon. | |||
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36 | US2014264501A1 |
DEPLETION-MODE FIELD-EFFECT TRANSISTOR-BASED PHOTOTRANSITOR
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Publication/Patent Number: US2014264501A1 | Publication Date: 2014-09-18 | Application Number: 13/835,662 | Filing Date: 2013-03-15 | Inventor： Na, Yeul Saraswat, Krishna C. | Assignee: SEMICONDUCTOR RESEARCH CORPORATION | IPC: H01L31/062 | Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon. | |||
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37 | WO2014205353A2 |
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS SENSORS
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Publication/Patent Number: WO2014205353A2 | Publication Date: 2014-12-24 | Application Number: 2014043421 | Filing Date: 2014-06-20 | Inventor： Jung, Woo-shik Kim, Youngsik Na, Yeul Lee, Jae Hyung | Assignee: STRATIO, INC. | IPC: H01L27/14 | Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate |
3.Current Quota