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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
21
WO2017139008A1
BROADBAND VISIBLE-SHORTWAVE INFRARED SPECTROMETER
Publication/Patent Number: WO2017139008A1 Publication Date: 2017-08-17 Application Number: 2016064585 Filing Date: 2016-12-02 Inventor: Kim, Youngsik   Na, Yeul   Jung, Wooshik   Kang, Juhyung   Lee, Jae Hyung   Assignee: STRATIO, INC.   STRATIO   IPC: A61B1/06 Abstract: An apparatus for analyzing visible and shortwave infrared light includes an input aperture for receiving light that includes a visible wavelength component and a shortwave infrared wavelength component; a first set of one or more lenses configured to relay light from the input aperture; one or more dispersive optical elements configured to disperse light from the first set of one or more lenses; a second set of one or more lenses configured to focus the dispersed light from the one or more dispersive optical elements; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals that include electrical signals indicating intensity of the visible wavelength component and electrical signals indicating intensity of the shortwave infrared wavelength component.
22
US2017195327A1
PEER-TO-PEER COMMUNICATION BASED ON DEVICE IDENTIFIERS
Publication/Patent Number: US2017195327A1 Publication Date: 2017-07-06 Application Number: 15/468,027 Filing Date: 2017-03-23 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Jung, Wooshik   Bhattiprolu, Seema   Assignee: STRATIO, INC.   STRATIO   IPC: H04L29/06 Abstract: A server system receives from a first electronic device a first device identifier and network information of the first electronic device; subsequent to receiving the first device identifier and the network information of the first electronic device, receives from a second electronic device a second device identifier and network information of the second electronic device; in response to receiving from the second electronic device the second device identifier and the network information of the second electronic device, determines whether the first device identifier is associated with the second device identifier; and, in accordance with a determination that the first device identifier is associated with the second device identifier, sends to the second electronic device the network information of the first electronic device and/or sends to the first electronic device the network information of the second electronic device.
23
US2017287706A1
Reduction of Surface Roughness in Epitaxially Grown Germanium by Controlled Thermal Oxidation
Publication/Patent Number: US2017287706A1 Publication Date: 2017-10-05 Application Number: 15/624,603 Filing Date: 2017-06-15 Inventor: Jung, Woo-shik   Na, Yeul   Kim, Youngsik   Lee, Jae Hyung   Lee, Jin Hyung   Assignee: Stratio, Inc.   IPC: H01L21/02 Abstract: Methods for reducing surface roughness of germanium are described herein. In some embodiments, the surface roughness is reduced by thermal oxidation of germanium. In some embodiments, the surface roughness is further reduced by controlling a rate of the thermal oxidation. In some embodiments, the surface roughness is reduced by thermal annealing.
24
KR20170096134A
REDUCTION OF SURFACE ROUGHNESS IN EPITAXIALLY GROWN GERMANIUM BY CONTROLLED THERMAL OXIDATION
Publication/Patent Number: KR20170096134A Publication Date: 2017-08-23 Application Number: 20177018942 Filing Date: 2015-12-15 Inventor: Lee, Jae Hyung   Kim, Youngsik   Lee, Jin Hyung   Na, Yeul   Jung, Woo Shik   Assignee: STRATIO, INC.   IPC: H01L21/02 Abstract: 본원에서는 게르마늄의 표면 거칠기를 감소시키기 위한 방법들이 개시되어 있다. 몇몇 실시형태에서
25
US9343608B2
Depletion-mode field-effect transistor-based phototransistor
Publication/Patent Number: US9343608B2 Publication Date: 2016-05-17 Application Number: 14/461,038 Filing Date: 2014-08-15 Inventor: Na, Yeul   Saraswat, Krishna C   Assignee: Board of Regents, The University of Texas System   IPC: H01L31/112 Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon.
26
US9378950B1
Methods for removing nuclei formed during epitaxial growth
Publication/Patent Number: US9378950B1 Publication Date: 2016-06-28 Application Number: 15/051,362 Filing Date: 2016-02-23 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Jung, Woo-shik   Assignee: STRATIO   STRATIO INC.   IPC: H01L21/336 Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.
27
US2016099372A1
Gate-controlled Charge Modulated Device for CMOS Image Sensors
Publication/Patent Number: US2016099372A1 Publication Date: 2016-04-07 Application Number: 14/967,262 Filing Date: 2015-12-11 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio Inc.   IPC: H01L31/113 Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.
28
KR20160021289A
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS SENSORS
Publication/Patent Number: KR20160021289A Publication Date: 2016-02-24 Application Number: 20167001437 Filing Date: 2014-06-20 Inventor: Lee, Jae Hyung   Kim, Youngsik   Na, Yeul   Jung, Woo Shik   Assignee: STRATIO, INC.   IPC: H01L27/146 Abstract: 광을 감지하는 디바이스는 제 1 타입의 도펀트로 도핑된 제 1 반도체 영역 및 제 2 타입의 도펀트로 도핑된 제 2 반도체 영역을 포함한다. 제 2 반도체 영역은 제 1 반도체 영역 위에 배치된다. 디바이스는 게이트 절연 층; 게이트
29
WO2016191371A1
METHODS FOR REMOVING NUCLEI FORMED DURING EPITAXIAL GROWTH
Publication/Patent Number: WO2016191371A1 Publication Date: 2016-12-01 Application Number: 2016033783 Filing Date: 2016-05-23 Inventor: Jung, Woo-shik   Kim, Youngsik   Lee, Jae Hyung   Na, Yeul   Assignee: STRATIO   STRATIO, INC.   IPC: H01L21/02 Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes
30
EP3011594A2
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS IMAGE SENSORS
Publication/Patent Number: EP3011594A2 Publication Date: 2016-04-27 Application Number: 14814462.9 Filing Date: 2014-06-20 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio, Inc.   IPC: H01L27/14
31
WO2016100373A1
REDUCTION OF SURFACE ROUGHNESS IN EPITAXIALLY GROWN GERMANIUM BY CONTROLLED THERMAL OXIDATION
Publication/Patent Number: WO2016100373A1 Publication Date: 2016-06-23 Application Number: 2015065869 Filing Date: 2015-12-15 Inventor: Jung, Woo-shik   Lee, Jin Hyung   Kim, Youngsik   Na, Yeul   Lee, Jae Hyung   Assignee: STRATIO, INC.   IPC: H01L21/02 Abstract: Methods for reducing surface roughness of germanium are described herein. In some embodiments
32
WO2016049558A1
PEER-TO-PEER COMMUNICATION BASED ON DEVICE IDENTIFIERS
Publication/Patent Number: WO2016049558A1 Publication Date: 2016-03-31 Application Number: 2015052410 Filing Date: 2015-09-25 Inventor: Kim, Youngsik   Na, Yeul   Lee, Jae Hyung   Jung, Wooshik   Bhattiprolu, Seema   Assignee: STRATIO, INC.   STRATIO   IPC: H04L9/32 Abstract: A server system receives from a first electronic device a first device identifier and network information of the first electronic device; subsequent to receiving the first device identifier and the network information of the first electronic device
33
WO2014205353A3
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS SENSORS
Publication/Patent Number: WO2014205353A3 Publication Date: 2015-02-19 Application Number: 2014043421 Filing Date: 2014-06-20 Inventor: Jung, Woo-shik   Kim, Youngsik   Na, Yeul   Lee, Jae Hyung   Assignee: STRATIO, INC.   IPC: H01L27/14 Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate
34
US2014363917A1
DEPLETION-MODE FIELD-EFFECT TRANSISTOR-BASED PHOTOTRANSISTOR
Publication/Patent Number: US2014363917A1 Publication Date: 2014-12-11 Application Number: 14/461,038 Filing Date: 2014-08-15 Inventor: Na, Yeul   Saraswat, Krishna C.   Assignee: The Board of Trustees of the Leland Stanford Junior University   IPC: H01L31/112 Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon.
35
US8896083B2
Depletion-mode field-effect transistor-based phototransitor
Publication/Patent Number: US8896083B2 Publication Date: 2014-11-25 Application Number: 13/835,662 Filing Date: 2013-03-15 Inventor: Na, Yeul   Saraswat, Krishna C.   Assignee: Board of Regents, The University of Texas System   IPC: H01L31/06 Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon.
36
US2014264501A1
DEPLETION-MODE FIELD-EFFECT TRANSISTOR-BASED PHOTOTRANSITOR
Publication/Patent Number: US2014264501A1 Publication Date: 2014-09-18 Application Number: 13/835,662 Filing Date: 2013-03-15 Inventor: Na, Yeul   Saraswat, Krishna C.   Assignee: SEMICONDUCTOR RESEARCH CORPORATION   IPC: H01L31/062 Abstract: A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon.
37
WO2014205353A2
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS SENSORS
Publication/Patent Number: WO2014205353A2 Publication Date: 2014-12-24 Application Number: 2014043421 Filing Date: 2014-06-20 Inventor: Jung, Woo-shik   Kim, Youngsik   Na, Yeul   Lee, Jae Hyung   Assignee: STRATIO, INC.   IPC: H01L27/14 Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate
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