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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1 US2020194486A1
PHOTODETECTING DEVICE WITH ENHANCED COLLECTION EFFICIENCY
Publication/Patent Number: US2020194486A1 Publication Date: 2020-06-18 Application Number: 16/716,114 Filing Date: 2019-12-16 Inventor: Na, Yun-chung   Assignee: ARTILUX, INC.   IPC: H01L27/146 Abstract: A photodetecting device includes a substrate, a first photosensitive layer supported by the substrate, and a second photosensitive layer supported by the substrate and adjacent to the first photosensitive layer, each of the first photosensitive layer and the second photosensitive layer being coupled to a first doped portion having a first conductivity type, and a second doped region having a second conductivity type different from the first conductivity type, wherein the first photosensitive layer is separated from the second photosensitive layer, and the first doped portion coupled to the first photosensitive layer is electrically connected to the first doped portion coupled to the second photosensitive layer. A photodetecting device includes a substrate, a first photosensitive layer supported by the substrate, and a second photosensitive layer supported by the substrate and adjacent to the first photosensitive layer, each of the first photosensitive layer and the second ...More Less
2 EP3675183A1
PHOTODETECTING DEVICE WITH ENHANCED COLLECTION EFFICIENCY
Publication/Patent Number: EP3675183A1 Publication Date: 2020-07-01 Application Number: 19217183.3 Filing Date: 2019-12-17 Inventor: Na, Yun-chung   Assignee: Artilux Inc.   IPC: H01L31/0352 Abstract: A photodetecting device (100) with enhanced collection efficiency includes a substrate (9), a first photosensitive layer (3A) supported by the substrate, and a second photosensitive layer (3B) supported by the substrate and adjacent to the first photosensitive layer, each of the first photosensitive layer (3A) and the second photosensitive layer (3B) being coupled to a first doped portion (10A, 10B) having a first conductivity type, and a second doped region (20) having a second conductivity type different from the first conductivity type, wherein the first photosensitive layer (3A) is separated from the second photosensitive layer (3B), and the first doped portion (10A) coupled to the first photosensitive layer (3A) is electrically connected to the first doped portion (10B) coupled to the second photosensitive layer (3B). A photodetecting device (100) with enhanced collection efficiency includes a substrate (9), a first photosensitive layer (3A) supported by the substrate, and a second photosensitive layer (3B) supported by the substrate and adjacent to the first photosensitive layer, each of the ...More Less
3 EP3404717B1
HIGH-SPEED LIGHT SENSING APPARATUS
Publication/Patent Number: EP3404717B1 Publication Date: 2020-01-08 Application Number: 18176031.5 Filing Date: 2016-11-04 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146
4 US10656253B2
High-speed light sensing apparatus
Publication/Patent Number: US10656253B2 Publication Date: 2020-05-19 Application Number: 16/430,019 Filing Date: 2019-06-03 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal. An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches ...More Less
5 US10677965B2
Optical apparatus for non-visible light applications
Publication/Patent Number: US10677965B2 Publication Date: 2020-06-09 Application Number: 15/975,534 Filing Date: 2018-05-09 Inventor: Chen, Shu-lu   Na, Yun-chung   Assignee: Forelux Inc.   IPC: G02F1/29 Abstract: An optical device fabrication method includes removing semiconductor material from a semiconductor substrate to form a first curved surface and a second curved surface, forming a bonding material on the first curved surface, and selectively removing semiconductor material from at least one of the first and the second curved surfaces to form one or more subwavelength structures. The semiconductor substrate has a bandgap wavelength associated with a bandgap energy of the semiconductor material. The optical device refracts certain incident electromagnetic radiation and/or filters other electromagnetic radiation. The refracted radiation includes infrared wavelengths longer than the bandgap wavelength and the filtered radiation includes wavelengths shorter than the bandgap wavelength. An optical device fabrication method includes removing semiconductor material from a semiconductor substrate to form a first curved surface and a second curved surface, forming a bonding material on the first curved surface, and selectively removing semiconductor material from ...More Less
6 EP3621113A1
HIGH-SPEED LIGHT SENSING APPARATUS
Publication/Patent Number: EP3621113A1 Publication Date: 2020-03-11 Application Number: 19203472.6 Filing Date: 2016-11-04 Inventor: Na, Yun-chung   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146 Abstract: An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal. An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches ...More Less
7 EP2866067B1
Grating based optical coupler
Publication/Patent Number: EP2866067B1 Publication Date: 2020-07-29 Application Number: 14189392.5 Filing Date: 2014-10-17 Inventor: Chen, Shu-lu   Na, Yun-chung   Assignee: Forelux Inc.   IPC: G02B6/30
8 US10539719B2
Photonic apparatus with periodic structures
Publication/Patent Number: US10539719B2 Publication Date: 2020-01-21 Application Number: 15/496,643 Filing Date: 2017-04-25 Inventor: Chen, Shu-lu   Na, Yun-chung   Assignee: Forelux Inc.   IPC: G02B3/08 Abstract: An optical apparatus including a substrate and a refractive element formed above the substrate. The refractive element including a surface with a predetermined radius of curvature, and a group of periodic structures formed on the surface configured to refract or to filter one or more wavelengths of an incident light. An optical apparatus including a substrate and a refractive element formed above the substrate. The refractive element including a surface with a predetermined radius of curvature, and a group of periodic structures formed on the surface configured to refract or to filter one or ...More Less
9 US10564718B2
Eye gesture tracking
Publication/Patent Number: US10564718B2 Publication Date: 2020-02-18 Application Number: 16/118,312 Filing Date: 2018-08-30 Inventor: Na, Yun-chung   Chen, Chien-lung   Liu, Han-din   Chen, Shu-lu   Assignee: Artilux, Inc.   IPC: G06F3/00 Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from an eye and determining a depth map of the eye based on phase differences between the electrical signal generated by the photodetector and a reference signal. Further, the method includes determining gaze information that represents a gaze of the eye based on the depth map and providing output data representing the gaze information. Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from ...More Less
10 EP3667743A3
SEMICONDUCTOR DEVICE WITH LOW DARK NOISE
Publication/Patent Number: EP3667743A3 Publication Date: 2020-06-24 Application Number: 19215416.9 Filing Date: 2019-12-11 Inventor: Na, Yun-chung   Lu, Yen-cheng   Yang, Ming-jay   Cheng, Szu-lin   Assignee: Artilux Inc.   IPC: H01L31/103 Abstract: A semiconductor device with low dark noise is provided. The semiconductor device includes a photo-detecting device, including an absorption layer (310, 610) comprising germanium; a first switch (330, 630) comprising a first doped region (331, 631) in the absorption layer and of a first conductivity type; a second switch (340, 640) comprising a second doped region (341, 641) in the absorption layer and physically separated from the first doped region (331, 631), wherein the second doped region (341, 641) is of a second conductivity type the same as the first conductivity type; a first counter-doped region (350, 650) adjacent to the first doped region and of a third conductivity type different from the first conductivity type; and a second counter-doped region (351, 651) and adjacent to the second doped region (341, 641) and of a fourth conductivity type different from the second conductivity type. A semiconductor device with low dark noise is provided. The semiconductor device includes a photo-detecting device, including an absorption layer (310, 610) comprising germanium; a first switch (330, 630) comprising a first doped region (331, 631) in the absorption layer and of ...More Less
11 US2020194480A1
SEMICONDUCTOR DEVICE WITH LOW DARK NOISE
Publication/Patent Number: US2020194480A1 Publication Date: 2020-06-18 Application Number: 16/709,848 Filing Date: 2019-12-10 Inventor: Na, Yun-chung   Lu, Yen-cheng   Yang, Ming-jay   Cheng, Szu-lin   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: A semiconductor device includes a germanium region, a doped region in the germanium region, wherein the doped region is of a first conductivity type; and a counter-doped region in the germanium region and adjacent to the doped region, wherein the counter-doped region is of a second conductivity type different from the first conductivity type. A semiconductor device includes a germanium region, a doped region in the germanium region, wherein the doped region is of a first conductivity type; and a counter-doped region in the germanium region and adjacent to the doped region, wherein the counter-doped region is of a ...More Less
12 EP3667743A2
SEMICONDUCTOR DEVICE WITH LOW DARK NOISE
Publication/Patent Number: EP3667743A2 Publication Date: 2020-06-17 Application Number: 19215416.9 Filing Date: 2019-12-11 Inventor: Na, Yun-chung   Lu, Yen-cheng   Yang, Ming-jay   Cheng, Szu-lin   Assignee: Artilux Inc.   IPC: H01L31/103 Abstract: A semiconductor device with low dark noise is provided. The semiconductor device includes a photo-detecting device, including an absorption layer (310, 610) comprising germanium; a first switch (330, 630) comprising a first doped region (331, 631) in the absorption layer and of a first conductivity type; a second switch (340, 640) comprising a second doped region (341, 641) in the absorption layer and physically separated from the first doped region (331, 631), wherein the second doped region (341, 641) is of a second conductivity type the same as the first conductivity type; a first counter-doped region (350, 650) adjacent to the first doped region and of a third conductivity type different from the first conductivity type; and a second counter-doped region (351, 651) and adjacent to the second doped region (341, 641) and of a fourth conductivity type different from the second conductivity type. A semiconductor device with low dark noise is provided. The semiconductor device includes a photo-detecting device, including an absorption layer (310, 610) comprising germanium; a first switch (330, 630) comprising a first doped region (331, 631) in the absorption layer and of ...More Less
13 EP3370258B1
GERMANIUM-SILICON LIGHT SENSING APPARATUS
Publication/Patent Number: EP3370258B1 Publication Date: 2020-03-25 Application Number: 18160200.4 Filing Date: 2016-08-04 Inventor: Liu, Han-din   Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Chen, Hui-wen   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146
14 EP3370259B1
GERMANIUM-SILICON LIGHT SENSING APPARATUS
Publication/Patent Number: EP3370259B1 Publication Date: 2020-03-11 Application Number: 18160205.3 Filing Date: 2016-08-04 Inventor: Liu, Han-din   Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Chen, Hui-wen   Liang, Che-fu   Assignee: Artilux Inc.   IPC: H01L27/146
15 US2020192032A1
PHOTO-DETECTING APPARATUS WITH MULTI-RESET MECHANISM CROSS-REFERENCE TO RELATED APPLICATIONS
Publication/Patent Number: US2020192032A1 Publication Date: 2020-06-18 Application Number: 16/705,240 Filing Date: 2019-12-06 Inventor: Na, Yun-chung   Liang, Che-fu   Chen, Chien-lung   Lyu, Yuan-fu   Lu, Yen-cheng   Assignee: Artilux, Inc.   IPC: G02B6/35 Abstract: A photo-detecting apparatus includes an optical-to-electric converter, having a first output terminal, configured to convert an incident light to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal and a second channel terminal, wherein the second channel terminal of the cascode transistor is coupled to the first output terminal of the optical-to-electric converter; and a reset transistor, having a control terminal, a first channel terminal and a second channel terminal, wherein the first channel terminal of the reset transistor is coupled to a supply voltage and the second channel terminal of the reset transistor is coupled to the first channel terminal of the cascode transistor. A photo-detecting apparatus includes an optical-to-electric converter, having a first output terminal, configured to convert an incident light to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal and a second channel terminal ...More Less
16 US2020194490A1
HIGH EFFICIENCY WIDE SPECTRUM SENSOR
Publication/Patent Number: US2020194490A1 Publication Date: 2020-06-18 Application Number: 16/801,946 Filing Date: 2020-02-26 Inventor: Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Liu, Han-din   Chen, Hui-wen   Assignee: Artilux, Inc.   IPC: H01L27/146 Abstract: A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and silicon; and forming, over the graded material layer, a second material layer comprising a second alloy of germanium and silicon having a second germanium composition. The first germanium composition is lower than the second germanium composition and a germanium composition of the graded material layer is between the first germanium composition and the second germanium composition and varies along a direction perpendicular to the substrate. A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and ...More Less
17 EP3667727A1
PHOTO-DETECTING APPARATUS WITH MULTI-RESET MECHANISM
Publication/Patent Number: EP3667727A1 Publication Date: 2020-06-17 Application Number: 19215415.1 Filing Date: 2019-12-11 Inventor: Na, Yun-chung   Liang, Che-fu   Chen, Chien-lung   Lyu, Yuan-fu   Lu, Yen-cheng   Assignee: Artilux Inc.   IPC: H01L27/144 Abstract: A photo-detecting apparatus (100A) includes an optical-to-electric converter (170), having a first output terminal, configured to convert an incident light (IL) to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal (120A) and a second channel terminal, wherein the second channel terminal of the cascode transistor is coupled to the first output terminal of the optical-to-electric converter (170); and a reset transistor (141A), having a control terminal, a first channel terminal and a second channel terminal, wherein the first channel terminal of the reset transistor (141A) is coupled to a supply voltage (VDDR) and the second channel terminal of the reset transistor (141A) is coupled to the first channel terminal of the cascode transistor. A photo-detecting apparatus (100A) includes an optical-to-electric converter (170), having a first output terminal, configured to convert an incident light (IL) to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal (120A) and a second ...More Less
18 EP3363050B1
HIGH EFFICIENCY WIDE SPECTRUM SENSOR
Publication/Patent Number: EP3363050B1 Publication Date: 2020-07-08 Application Number: 16828622.7 Filing Date: 2016-07-22 Inventor: Liu, Han-din   Na, Yun-chung   Cheng, Szu-lin   Chen, Shu-lu   Chen, Hui-wen   Assignee: Artilux Inc.   IPC: H01L27/146