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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
US2020203408A1
SOLID-STATE IMAGING UNIT, METHOD OF PRODUCING THE SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020203408A1 Publication Date: 2020-06-25 Application Number: 16/639,229 Filing Date: 2018-08-08 Inventor: Nagata, Masaya   Wakiyama, Satoru   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging unit that makes it possible to increase the number of terminals, a method of producing the same, and an electronic apparatus. A solid-state imaging unit includes: an image sensor substrate including a light receiving region in which pixels that convert incoming light to an electric signal are arranged in a matrix; a solder ball; a glass substrate opposite the image sensor substrate and the solder ball; and a through electrode that couples a wiring line pattern and the solder ball to each other by penetrating a glass adhesive resin interposed between the wiring line pattern and the solder ball. The solder ball is disposed outside the image sensor substrate in a plane direction. The wiring line pattern being formed on the glass substrate. The present disclosure is applicable, for example, to a package and the like including the image sensor substrate.
2
US10804312B2
Semiconductor device and electronic device having a chip size package (CSP)
Publication/Patent Number: US10804312B2 Publication Date: 2020-10-13 Application Number: 16/516,785 Filing Date: 2019-07-19 Inventor: Nagata, Masaya   Takimoto, Kaori   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: The present disclosure relates to a semiconductor device, an electronic device, and a manufacturing method that can maintain the mounting reliability of an underfill. A chip is formed by a circuit 5 of an imaging element being produced on a Si substrate that is a first substrate and a second substrate being produced on an adhesive formed on the circuit. In this event, a photosensitive material is formed around the chip after the chip is mounted on a mounting substrate by a solder ball or in the state of the chip, then an underfill is formed, and then only the photosensitive 10 material is dissolved. The present disclosure can be applied to, for example, a CMOS solid-state imaging sensor used for an imaging device such as a camera.
3
EP3675170A1
SOLID-STATE IMAGE CAPTURE DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: EP3675170A1 Publication Date: 2020-07-01 Application Number: 18848058.6 Filing Date: 2018-08-08 Inventor: Nagata, Masaya   Wakiyama, Satoru   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging unit that makes it possible to increase the number of terminals, a method of producing the same, and an electronic apparatus. A solid-state imaging unit includes: an image sensor substrate including a light receiving region in which pixels that each convert incoming light to an electric signal are arranged in a matrix; a solder ball that outputs the electric signal; a glass substrate disposed to be opposed to the image sensor substrate and the solder ball; and a through electrode that couples a wiring line pattern and the solder ball to each other by penetrating a glass adhesive resin interposed between the wiring line pattern and the solder ball. The solder ball is disposed outside the image sensor substrate in a plane direction. The wiring line pattern being formed on the glass substrate. The present disclosure is applicable, for example, to a package and the like including the image sensor substrate.
4
EP3540776A3
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
Publication/Patent Number: EP3540776A3 Publication Date: 2020-01-08 Application Number: 19173175.1 Filing Date: 2014-12-12 Inventor: Komai, Naoki   Sasaki, Naoto   Ogawa, Naoki   Oinoue, Takashi   Iwamoto, Hayato   Ooka, Yutaka   Nagata, Masaya   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: A semiconductor device (1) includes a first semiconductor substrate (12) in which a pixel region (21) where pixel portions performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate (11) in which a logic circuit (23) processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate (18) protecting an on-chip lens (16) is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin (17) interposed therebetween.
5
EP3706169A1
BACKSIDE IRRADIATION TYPE SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING BACKSIDE IRRADIATION TYPE SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND ELECTRONIC APPARATUS
Publication/Patent Number: EP3706169A1 Publication Date: 2020-09-09 Application Number: 18872679.8 Filing Date: 2018-10-16 Inventor: Takachi, Taizo   Yamamoto, Yuichi   Saito, Suguru   Wakiyama, Satoru   Ootsuka, Yoichi   Komai, Naoki   Takimoto, Kaori   Iijima, Tadashi   Haneda, Masaki   Nagata, Masaya   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present disclosure relates to a backside illumination type solid-state imaging device, a manufacturing method for a backside illumination type solid-state imaging device, an imaging apparatus, and electronic equipment by which the manufacturing cost can be reduced. A singulated memory circuit and a singulated logic circuit are laid out in a horizontal direction and are embedded by an oxide film and flattened, and then are stacked so as to be contained in a plane direction under a solid-state imaging element. The present disclosure can be applied to an imaging apparatus.
6
US2020258924A1
BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS AND ELECTRONIC EQUIPMENT
Publication/Patent Number: US2020258924A1 Publication Date: 2020-08-13 Application Number: 16/758,535 Filing Date: 2018-10-16 Inventor: Takachi, Taizo   Yamamoto, Yuichi   Saito, Suguru   Wakiyama, Satoru   Ootsuka, Yoichi   Komai, Naoki   Takimoto, Kaori   Iijima, Tadashi   Haneda, Masaki   Nagata, Masaya   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a backside illumination type solid-state imaging device, a manufacturing method for a backside illumination type solid-state imaging device, an imaging apparatus, and electronic equipment by which the manufacturing cost can be reduced. A singulated memory circuit and a singulated logic circuit are laid out in a horizontal direction and are embedded by an oxide film and flattened, and then are stacked so as to be contained in a plane direction under a solid-state imaging element. The present disclosure can be applied to an imaging apparatus.
7
US2020273897A1
IMAGE SENSOR HAVING IMPROVED DICING PROPERTIES, MANUFACTURING APPARATUS, AND MANUFACTURING METHOD OF THE SAME
Publication/Patent Number: US2020273897A1 Publication Date: 2020-08-27 Application Number: 16/807,049 Filing Date: 2020-03-02 Inventor: Yamamoto, Atsushi   Miyazawa, Shinji   Ooka, Yutaka   Maeda, Kensaku   Moriya, Yusuke   Ogawa, Naoki   Fujii, Nobutoshi   Furuse, Shunsuke   Nagata, Masaya   Yamamoto, Yuichi   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
8
US10608028B2
Image sensor having improved dicing properties
Publication/Patent Number: US10608028B2 Publication Date: 2020-03-31 Application Number: 16/045,973 Filing Date: 2018-07-26 Inventor: Yamamoto, Atsushi   Miyazawa, Shinji   Ooka, Yutaka   Maeda, Kensaku   Moriya, Yusuke   Ogawa, Naoki   Fujii, Nobutoshi   Furuse, Shunsuke   Nagata, Masaya   Yamamoto, Yuichi   Assignee: SONY CORPORATION   IPC: H01L27/00 Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.