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1 | US2020203408A1 |
SOLID-STATE IMAGING UNIT, METHOD OF PRODUCING THE SAME, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2020203408A1 | Publication Date: 2020-06-25 | Application Number: 16/639,229 | Filing Date: 2018-08-08 | Inventor： Nagata, Masaya Wakiyama, Satoru | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging unit that makes it possible to increase the number of terminals, a method of producing the same, and an electronic apparatus. A solid-state imaging unit includes: an image sensor substrate including a light receiving region in which pixels that convert incoming light to an electric signal are arranged in a matrix; a solder ball; a glass substrate opposite the image sensor substrate and the solder ball; and a through electrode that couples a wiring line pattern and the solder ball to each other by penetrating a glass adhesive resin interposed between the wiring line pattern and the solder ball. The solder ball is disposed outside the image sensor substrate in a plane direction. The wiring line pattern being formed on the glass substrate. The present disclosure is applicable, for example, to a package and the like including the image sensor substrate. | |||
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2 | US10804312B2 |
Semiconductor device and electronic device having a chip size package (CSP)
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Publication/Patent Number: US10804312B2 | Publication Date: 2020-10-13 | Application Number: 16/516,785 | Filing Date: 2019-07-19 | Inventor： Nagata, Masaya Takimoto, Kaori | Assignee: Sony Corporation | IPC: H01L27/14 | Abstract: The present disclosure relates to a semiconductor device, an electronic device, and a manufacturing method that can maintain the mounting reliability of an underfill. A chip is formed by a circuit 5 of an imaging element being produced on a Si substrate that is a first substrate and a second substrate being produced on an adhesive formed on the circuit. In this event, a photosensitive material is formed around the chip after the chip is mounted on a mounting substrate by a solder ball or in the state of the chip, then an underfill is formed, and then only the photosensitive 10 material is dissolved. The present disclosure can be applied to, for example, a CMOS solid-state imaging sensor used for an imaging device such as a camera. | |||
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3 | EP3675170A1 |
SOLID-STATE IMAGE CAPTURE DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC APPARATUS
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Publication/Patent Number: EP3675170A1 | Publication Date: 2020-07-01 | Application Number: 18848058.6 | Filing Date: 2018-08-08 | Inventor： Nagata, Masaya Wakiyama, Satoru | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging unit that makes it possible to increase the number of terminals, a method of producing the same, and an electronic apparatus. A solid-state imaging unit includes: an image sensor substrate including a light receiving region in which pixels that each convert incoming light to an electric signal are arranged in a matrix; a solder ball that outputs the electric signal; a glass substrate disposed to be opposed to the image sensor substrate and the solder ball; and a through electrode that couples a wiring line pattern and the solder ball to each other by penetrating a glass adhesive resin interposed between the wiring line pattern and the solder ball. The solder ball is disposed outside the image sensor substrate in a plane direction. The wiring line pattern being formed on the glass substrate. The present disclosure is applicable, for example, to a package and the like including the image sensor substrate. | |||
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4 | EP3540776A3 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
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Publication/Patent Number: EP3540776A3 | Publication Date: 2020-01-08 | Application Number: 19173175.1 | Filing Date: 2014-12-12 | Inventor： Komai, Naoki Sasaki, Naoto Ogawa, Naoki Oinoue, Takashi Iwamoto, Hayato Ooka, Yutaka Nagata, Masaya | Assignee: Sony Corporation | IPC: H01L27/146 | Abstract: A semiconductor device (1) includes a first semiconductor substrate (12) in which a pixel region (21) where pixel portions performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate (11) in which a logic circuit (23) processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate (18) protecting an on-chip lens (16) is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin (17) interposed therebetween. | |||
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5 | EP3706169A1 |
BACKSIDE IRRADIATION TYPE SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING BACKSIDE IRRADIATION TYPE SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND ELECTRONIC APPARATUS
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Publication/Patent Number: EP3706169A1 | Publication Date: 2020-09-09 | Application Number: 18872679.8 | Filing Date: 2018-10-16 | Inventor： Takachi, Taizo Yamamoto, Yuichi Saito, Suguru Wakiyama, Satoru Ootsuka, Yoichi Komai, Naoki Takimoto, Kaori Iijima, Tadashi Haneda, Masaki Nagata, Masaya | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: The present disclosure relates to a backside illumination type solid-state imaging device, a manufacturing method for a backside illumination type solid-state imaging device, an imaging apparatus, and electronic equipment by which the manufacturing cost can be reduced. A singulated memory circuit and a singulated logic circuit are laid out in a horizontal direction and are embedded by an oxide film and flattened, and then are stacked so as to be contained in a plane direction under a solid-state imaging element. The present disclosure can be applied to an imaging apparatus. | |||
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6 | US2020258924A1 |
BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS AND ELECTRONIC EQUIPMENT
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Publication/Patent Number: US2020258924A1 | Publication Date: 2020-08-13 | Application Number: 16/758,535 | Filing Date: 2018-10-16 | Inventor： Takachi, Taizo Yamamoto, Yuichi Saito, Suguru Wakiyama, Satoru Ootsuka, Yoichi Komai, Naoki Takimoto, Kaori Iijima, Tadashi Haneda, Masaki Nagata, Masaya | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to a backside illumination type solid-state imaging device, a manufacturing method for a backside illumination type solid-state imaging device, an imaging apparatus, and electronic equipment by which the manufacturing cost can be reduced. A singulated memory circuit and a singulated logic circuit are laid out in a horizontal direction and are embedded by an oxide film and flattened, and then are stacked so as to be contained in a plane direction under a solid-state imaging element. The present disclosure can be applied to an imaging apparatus. | |||
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7 | US2020273897A1 |
IMAGE SENSOR HAVING IMPROVED DICING PROPERTIES, MANUFACTURING APPARATUS, AND MANUFACTURING METHOD OF THE SAME
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Publication/Patent Number: US2020273897A1 | Publication Date: 2020-08-27 | Application Number: 16/807,049 | Filing Date: 2020-03-02 | Inventor： Yamamoto, Atsushi Miyazawa, Shinji Ooka, Yutaka Maeda, Kensaku Moriya, Yusuke Ogawa, Naoki Fujii, Nobutoshi Furuse, Shunsuke Nagata, Masaya Yamamoto, Yuichi | Assignee: SONY CORPORATION | IPC: H01L27/146 | Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor. | |||
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8 | US10608028B2 |
Image sensor having improved dicing properties
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Publication/Patent Number: US10608028B2 | Publication Date: 2020-03-31 | Application Number: 16/045,973 | Filing Date: 2018-07-26 | Inventor： Yamamoto, Atsushi Miyazawa, Shinji Ooka, Yutaka Maeda, Kensaku Moriya, Yusuke Ogawa, Naoki Fujii, Nobutoshi Furuse, Shunsuke Nagata, Masaya Yamamoto, Yuichi | Assignee: SONY CORPORATION | IPC: H01L27/00 | Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor. |
