Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
US2020185443A1
SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: US2020185443A1 Publication Date: 2020-06-11 Application Number: 16/336,009 Filing Date: 2017-09-28 Inventor: Itabasi, Kouichi   Nishimura yuuji   Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
2
US10847561B2
Solid-state imaging element and method for manufacturing the same, and electronic device
Publication/Patent Number: US10847561B2 Publication Date: 2020-11-24 Application Number: 16/336,009 Filing Date: 2017-09-28 Inventor: Itabasi, Kouichi   Nishimura yuuji   Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
3
US10721422B2
Imaging element, driving method, and electronic device
Publication/Patent Number: US10721422B2 Publication Date: 2020-07-21 Application Number: 16/401,853 Filing Date: 2019-05-02 Inventor: Yanagita, Takeshi   Takizawa, Masaaki   Nishimura yuuji   Arakawa, Shinichi   Nakamura, Yuugo   Chiba, Yohei   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/378 Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.
4
US2020314371A1
IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC DEVICE
Publication/Patent Number: US2020314371A1 Publication Date: 2020-10-01 Application Number: 16/903,735 Filing Date: 2020-06-17 Inventor: Yanagita, Takeshi   Takizawa, Masaaki   Nishimura yuuji   Arakawa, Shinichi   Nakamura, Yuugo   Chiba, Yohei   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/363 Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.
5
US10728475B2
Imaging element, driving method, and electronic device
Publication/Patent Number: US10728475B2 Publication Date: 2020-07-28 Application Number: 15/578,761 Filing Date: 2016-05-26 Inventor: Yanagita, Takeshi   Takizawa, Masaaki   Nishimura yuuji   Arakawa, Shinichi   Nakamura, Yuugo   Chiba, Yohei   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/378 Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.
6
US10341592B2
Imaging element, driving method, and electronic device
Publication/Patent Number: US10341592B2 Publication Date: 2019-07-02 Application Number: 15/849,448 Filing Date: 2017-12-20 Inventor: Yanagita, Takeshi   Takizawa, Masaaki   Nishimura yuuji   Arakawa, Shinichi   Nakamura, Yuugo   Chiba, Yohei   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/378 Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.
7
US2019260950A1
IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC DEVICE
Publication/Patent Number: US2019260950A1 Publication Date: 2019-08-22 Application Number: 16/401,853 Filing Date: 2019-05-02 Inventor: Arakawa, Shinichi   Nakamura, Yuugo   Chiba, Yohei   Nishimura yuuji   Takizawa, Masaaki   Yanagita, Takeshi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/3745 Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.
8
WO2018070259A1
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: WO2018070259A1 Publication Date: 2018-04-19 Application Number: 2017035190 Filing Date: 2017-09-28 Inventor: Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Itabasi, Kouichi   Nishimura yuuji   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: The present technology relates to a solid-state imaging element, a method for manufacturing same, and an electronic device, wherein the solid-state imaging element can suppress the occurrence of flares, ghosts, or color mixing, as well as the occurrence of stains caused by moisture. The solid-state imaging element has, on the surface of a microlens, a pixel in which a single-layered anti-reflective film is formed, and a pixel in which a double-layered anti-reflective film is formed. The present technology can be applied, for example, to a backside illumination-type solid-state imaging element.
9
US2018184025A1
IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC DEVICE
Publication/Patent Number: US2018184025A1 Publication Date: 2018-06-28 Application Number: 15/578,761 Filing Date: 2016-05-26 Inventor: Chiba, Yohei   Nakamura, Yuugo   Arakawa, Shinichi   Nishimura yuuji   Takizawa, Masaaki   Yanagita, Takeshi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/355 Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.
10
US2018115727A1
IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC DEVICE
Publication/Patent Number: US2018115727A1 Publication Date: 2018-04-26 Application Number: 15/849,448 Filing Date: 2017-12-20 Inventor: Chiba, Yohei   Nakamura, Yuugo   Arakawa, Shinichi   Nishimura yuuji   Takizawa, Masaaki   Yanagita, Takeshi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/378 Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.
11
KR20180016369A
촬상 소자 및 구동 방법, 및 전자 기기
Title (English): Photographic components and operating methods, and electronic equipment
Publication/Patent Number: KR20180016369A Publication Date: 2018-02-14 Application Number: 20177034702 Filing Date: 2016-05-26 Inventor: Yanagita, Takeshi   Arakawa, Shinichi   Takizawa, Masaaki   Nishimura yuuji   Chiba, Yohei   Nakamura, Yuugo   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: 본 개시는, 보다 저노이즈로 선명한 화상을 촬상할 수 있도록 하는 촬상 소자 및 구동 방법, 및 전자 기기에 관한 것이다. 입사한 광을 광전변환에 의해 전하로 변환하여 축적하는 광전변환부와, 광전변환부에서 발생한 전하를 전송하는 전하 전송부와, 전하 전송부를 통하여 전하가 전송되고, 소정의 축적 용량을 구비하는 확산층과, 확산층에 전송된 전하를 화소 신호로 변환하는 변환부와, 확산층 및 변환부를 접속하는 접속 배선을 갖는 화소를 구비한다. 그리고, 접속 배선은, 확산층이 형성되는 반도체 기판에 대해 수직 방향으로 늘어나는 콘택트 배선을 통하여 확산층 및 변환부에 접속되고, 화소 내에 마련되는 다른 배선보다도 반도체 기판측에 형성된다. 본 기술은, 예를 들면, 감시나 차량 탑재 등에 사용되는 촬상 소자에 적용할 수 있다.
12
US10008529B2
Solid-state imaging device, method of manufacturing the same, and electronic apparatus
Publication/Patent Number: US10008529B2 Publication Date: 2018-06-26 Application Number: 15/512,131 Filing Date: 2015-09-17 Inventor: Nishi, Takafumi   Ootsuka, Yoichi   Shimoji, Masaya   Seki, Yuichi   Jinwaki, Toyomi   Ishikawa, Mitsuru   Takita, Yosuke   Chiba, Ryou   Itabasi, Kouichi   Nishimura yuuji   Kitano, Yoshiaki   Nakashikiryo, Takashi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
13
US2017278889A1
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2017278889A1 Publication Date: 2017-09-28 Application Number: 15/512,131 Filing Date: 2015-09-17 Inventor: Nakashikiryo, Takashi   Kitano, Yoshiaki   Nishimura yuuji   Itabasi, Kouichi   Chiba, Ryou   Takita, Yosuke   Ishikawa, Mitsuru   Jinwaki, Toyomi   Seki, Yuichi   Shimoji, Masaya   Ootsuka, Yoichi   Nishi, Takafumi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
14
TW201644043A
Imaging element
Publication/Patent Number: TW201644043A Publication Date: 2016-12-16 Application Number: 105111895 Filing Date: 2016-04-15 Inventor: Takizawa, Masaaki   Arakawa, Shinichi   Yanagita, Takeshi   Nishimura yuuji   Chiba, Yohei   Nakamura, Yuugo   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to an imaging element
15
WO2016199588A1
IMAGING ELEMENT
Publication/Patent Number: WO2016199588A1 Publication Date: 2016-12-15 Application Number: 2016065591 Filing Date: 2016-05-26 Inventor: Arakawa, Shinichi   Nishimura yuuji   Takizawa, Masaaki   Chiba, Yohei   Yanagita, Takeshi   Nakamura, Yuugo   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to an imaging element
16
WO2016052220A1
SOLID-STATE IMAGING ELEMENT
Publication/Patent Number: WO2016052220A1 Publication Date: 2016-04-07 Application Number: 2015076414 Filing Date: 2015-09-17 Inventor: Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Kitano, Yoshiaki   Ootsuka, Yoichi   Nakashikiryo, Takashi   Jinwaki, Toyomi   Nishi, Takafumi   Itabasi, Kouichi   Takita, Yosuke   Chiba, Ryou   Nishimura yuuji   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: The present disclosure pertains to a solid-state imaging element
17
US9099534B2
Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
Publication/Patent Number: US9099534B2 Publication Date: 2015-08-04 Application Number: 14/319,178 Filing Date: 2014-06-30 Inventor: Watanabe, Kazuto   Matsushita, Atsushi   Horikoshi, Hiroshi   Sugiura, Iwao   Nishimura yuuji   Yamabata, Syota   Assignee: Sony Corporation   IPC: H01L23/48 Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.
18
TWI503960B
Manufacturing method of semiconductor device
Publication/Patent Number: TWI503960B Publication Date: 2015-10-11 Application Number: 101101494 Filing Date: 2012-01-13 Inventor: Horikoshi, Hiroshi   Sugiura, Iwao   Matsushita, Atsushi   Watanabe, Kazuto   Nishimura yuuji   Yamabata, Syota   Assignee: Sony Corporation   IPC: H01L21/28 Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials
19
US2014329353A1
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: US2014329353A1 Publication Date: 2014-11-06 Application Number: 14/319,178 Filing Date: 2014-06-30 Inventor: Watanabe, Kazuto   Matsushita, Atsushi   Horikoshi, Hiroshi   Sugiura, Iwao   Nishimura yuuji   Yamabata, Syota   Assignee: SONY CORPORATION   IPC: H01L21/768 Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.
20
US8786089B2
Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
Publication/Patent Number: US8786089B2 Publication Date: 2014-07-22 Application Number: 13/359,075 Filing Date: 2012-01-26 Inventor: Watanabe, Kazuto   Matsushita, Atsushi   Horikoshi, Hiroshi   Sugiura, Iwao   Nishimura yuuji   Yamabata, Syota   Assignee: Sony Corporation   IPC: H01L23/48 Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.