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1 | US2020185443A1 |
SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
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Publication/Patent Number: US2020185443A1 | Publication Date: 2020-06-11 | Application Number: 16/336,009 | Filing Date: 2017-09-28 | Inventor： Itabasi, Kouichi Nishimura yuuji Ishikawa, Mitsuru Seki, Yuichi Shimoji, Masaya | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element. | |||
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2 | US10847561B2 |
Solid-state imaging element and method for manufacturing the same, and electronic device
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Publication/Patent Number: US10847561B2 | Publication Date: 2020-11-24 | Application Number: 16/336,009 | Filing Date: 2017-09-28 | Inventor： Itabasi, Kouichi Nishimura yuuji Ishikawa, Mitsuru Seki, Yuichi Shimoji, Masaya | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element. | |||
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3 | US10721422B2 |
Imaging element, driving method, and electronic device
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Publication/Patent Number: US10721422B2 | Publication Date: 2020-07-21 | Application Number: 16/401,853 | Filing Date: 2019-05-02 | Inventor： Yanagita, Takeshi Takizawa, Masaaki Nishimura yuuji Arakawa, Shinichi Nakamura, Yuugo Chiba, Yohei | Assignee: Sony Semiconductor Solutions Corporation | IPC: H04N5/378 | Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel. | |||
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4 | US2020314371A1 |
IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC DEVICE
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Publication/Patent Number: US2020314371A1 | Publication Date: 2020-10-01 | Application Number: 16/903,735 | Filing Date: 2020-06-17 | Inventor： Yanagita, Takeshi Takizawa, Masaaki Nishimura yuuji Arakawa, Shinichi Nakamura, Yuugo Chiba, Yohei | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/363 | Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel. | |||
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5 | US10728475B2 |
Imaging element, driving method, and electronic device
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Publication/Patent Number: US10728475B2 | Publication Date: 2020-07-28 | Application Number: 15/578,761 | Filing Date: 2016-05-26 | Inventor： Yanagita, Takeshi Takizawa, Masaaki Nishimura yuuji Arakawa, Shinichi Nakamura, Yuugo Chiba, Yohei | Assignee: Sony Semiconductor Solutions Corporation | IPC: H04N5/378 | Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel. | |||
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6 | US10341592B2 |
Imaging element, driving method, and electronic device
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Publication/Patent Number: US10341592B2 | Publication Date: 2019-07-02 | Application Number: 15/849,448 | Filing Date: 2017-12-20 | Inventor： Yanagita, Takeshi Takizawa, Masaaki Nishimura yuuji Arakawa, Shinichi Nakamura, Yuugo Chiba, Yohei | Assignee: Sony Semiconductor Solutions Corporation | IPC: H04N5/378 | Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel. | |||
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7 | US2019260950A1 |
IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC DEVICE
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Publication/Patent Number: US2019260950A1 | Publication Date: 2019-08-22 | Application Number: 16/401,853 | Filing Date: 2019-05-02 | Inventor： Arakawa, Shinichi Nakamura, Yuugo Chiba, Yohei Nishimura yuuji Takizawa, Masaaki Yanagita, Takeshi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/3745 | Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel. | |||
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8 | WO2018070259A1 |
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
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Publication/Patent Number: WO2018070259A1 | Publication Date: 2018-04-19 | Application Number: 2017035190 | Filing Date: 2017-09-28 | Inventor： Ishikawa, Mitsuru Seki, Yuichi Shimoji, Masaya Itabasi, Kouichi Nishimura yuuji | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/369 | Abstract: The present technology relates to a solid-state imaging element, a method for manufacturing same, and an electronic device, wherein the solid-state imaging element can suppress the occurrence of flares, ghosts, or color mixing, as well as the occurrence of stains caused by moisture. The solid-state imaging element has, on the surface of a microlens, a pixel in which a single-layered anti-reflective film is formed, and a pixel in which a double-layered anti-reflective film is formed. The present technology can be applied, for example, to a backside illumination-type solid-state imaging element. | |||
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9 | US2018184025A1 |
IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC DEVICE
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Publication/Patent Number: US2018184025A1 | Publication Date: 2018-06-28 | Application Number: 15/578,761 | Filing Date: 2016-05-26 | Inventor： Chiba, Yohei Nakamura, Yuugo Arakawa, Shinichi Nishimura yuuji Takizawa, Masaaki Yanagita, Takeshi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/355 | Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel. | |||
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10 | US2018115727A1 |
IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC DEVICE
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Publication/Patent Number: US2018115727A1 | Publication Date: 2018-04-26 | Application Number: 15/849,448 | Filing Date: 2017-12-20 | Inventor： Chiba, Yohei Nakamura, Yuugo Arakawa, Shinichi Nishimura yuuji Takizawa, Masaaki Yanagita, Takeshi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/378 | Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel. | |||
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11 | KR20180016369A |
촬상 소자 및 구동 방법, 및 전자 기기
Title (English):
Photographic components and operating methods, and electronic equipment
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Publication/Patent Number: KR20180016369A | Publication Date: 2018-02-14 | Application Number: 20177034702 | Filing Date: 2016-05-26 | Inventor： Yanagita, Takeshi Arakawa, Shinichi Takizawa, Masaaki Nishimura yuuji Chiba, Yohei Nakamura, Yuugo | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/369 | Abstract: 본 개시는, 보다 저노이즈로 선명한 화상을 촬상할 수 있도록 하는 촬상 소자 및 구동 방법, 및 전자 기기에 관한 것이다. 입사한 광을 광전변환에 의해 전하로 변환하여 축적하는 광전변환부와, 광전변환부에서 발생한 전하를 전송하는 전하 전송부와, 전하 전송부를 통하여 전하가 전송되고, 소정의 축적 용량을 구비하는 확산층과, 확산층에 전송된 전하를 화소 신호로 변환하는 변환부와, 확산층 및 변환부를 접속하는 접속 배선을 갖는 화소를 구비한다. 그리고, 접속 배선은, 확산층이 형성되는 반도체 기판에 대해 수직 방향으로 늘어나는 콘택트 배선을 통하여 확산층 및 변환부에 접속되고, 화소 내에 마련되는 다른 배선보다도 반도체 기판측에 형성된다. 본 기술은, 예를 들면, 감시나 차량 탑재 등에 사용되는 촬상 소자에 적용할 수 있다. | |||
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12 | US10008529B2 |
Solid-state imaging device, method of manufacturing the same, and electronic apparatus
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Publication/Patent Number: US10008529B2 | Publication Date: 2018-06-26 | Application Number: 15/512,131 | Filing Date: 2015-09-17 | Inventor： Nishi, Takafumi Ootsuka, Yoichi Shimoji, Masaya Seki, Yuichi Jinwaki, Toyomi Ishikawa, Mitsuru Takita, Yosuke Chiba, Ryou Itabasi, Kouichi Nishimura yuuji Kitano, Yoshiaki Nakashikiryo, Takashi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example. | |||
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13 | US2017278889A1 |
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2017278889A1 | Publication Date: 2017-09-28 | Application Number: 15/512,131 | Filing Date: 2015-09-17 | Inventor： Nakashikiryo, Takashi Kitano, Yoshiaki Nishimura yuuji Itabasi, Kouichi Chiba, Ryou Takita, Yosuke Ishikawa, Mitsuru Jinwaki, Toyomi Seki, Yuichi Shimoji, Masaya Ootsuka, Yoichi Nishi, Takafumi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example. | |||
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14 | TW201644043A |
Imaging element
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Publication/Patent Number: TW201644043A | Publication Date: 2016-12-16 | Application Number: 105111895 | Filing Date: 2016-04-15 | Inventor： Takizawa, Masaaki Arakawa, Shinichi Yanagita, Takeshi Nishimura yuuji Chiba, Yohei Nakamura, Yuugo | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to an imaging element | |||
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15 | WO2016199588A1 |
IMAGING ELEMENT
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Publication/Patent Number: WO2016199588A1 | Publication Date: 2016-12-15 | Application Number: 2016065591 | Filing Date: 2016-05-26 | Inventor： Arakawa, Shinichi Nishimura yuuji Takizawa, Masaaki Chiba, Yohei Yanagita, Takeshi Nakamura, Yuugo | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to an imaging element | |||
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16 | WO2016052220A1 |
SOLID-STATE IMAGING ELEMENT
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Publication/Patent Number: WO2016052220A1 | Publication Date: 2016-04-07 | Application Number: 2015076414 | Filing Date: 2015-09-17 | Inventor： Ishikawa, Mitsuru Seki, Yuichi Shimoji, Masaya Kitano, Yoshiaki Ootsuka, Yoichi Nakashikiryo, Takashi Jinwaki, Toyomi Nishi, Takafumi Itabasi, Kouichi Takita, Yosuke Chiba, Ryou Nishimura yuuji | Assignee: Sony Corporation | IPC: H01L27/14 | Abstract: The present disclosure pertains to a solid-state imaging element | |||
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17 | US9099534B2 |
Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
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Publication/Patent Number: US9099534B2 | Publication Date: 2015-08-04 | Application Number: 14/319,178 | Filing Date: 2014-06-30 | Inventor： Watanabe, Kazuto Matsushita, Atsushi Horikoshi, Hiroshi Sugiura, Iwao Nishimura yuuji Yamabata, Syota | Assignee: Sony Corporation | IPC: H01L23/48 | Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer. | |||
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18 | TWI503960B |
Manufacturing method of semiconductor device
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Publication/Patent Number: TWI503960B | Publication Date: 2015-10-11 | Application Number: 101101494 | Filing Date: 2012-01-13 | Inventor： Horikoshi, Hiroshi Sugiura, Iwao Matsushita, Atsushi Watanabe, Kazuto Nishimura yuuji Yamabata, Syota | Assignee: Sony Corporation | IPC: H01L21/28 | Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials | |||
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19 | US2014329353A1 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2014329353A1 | Publication Date: 2014-11-06 | Application Number: 14/319,178 | Filing Date: 2014-06-30 | Inventor： Watanabe, Kazuto Matsushita, Atsushi Horikoshi, Hiroshi Sugiura, Iwao Nishimura yuuji Yamabata, Syota | Assignee: SONY CORPORATION | IPC: H01L21/768 | Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer. | |||
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20 | US8786089B2 |
Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
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Publication/Patent Number: US8786089B2 | Publication Date: 2014-07-22 | Application Number: 13/359,075 | Filing Date: 2012-01-26 | Inventor： Watanabe, Kazuto Matsushita, Atsushi Horikoshi, Hiroshi Sugiura, Iwao Nishimura yuuji Yamabata, Syota | Assignee: Sony Corporation | IPC: H01L23/48 | Abstract: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer. |
3.Current Quota