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1
US2020329199A1
TRACKING DEVICE AND TRACKING METHOD
Publication/Patent Number: US2020329199A1 Publication Date: 2020-10-15 Application Number: 16/816,906 Filing Date: 2020-03-12 Inventor: Nomura hirotoshi   Assignee: OLYMPUS CORPORATION   IPC: H04N5/232 Abstract: A tracking device, comprising a first image stabilization actuator that moves the image stabilization lens, a second image stabilization actuator that moves an image sensor, and a processor that has a calculation section, a determination section and a tracking control section, wherein the determination section determines whether or not a subject image exists at a specified position within an effective imaging region of the image sensor, the calculation section calculates movement direction and movement velocity for moving the subject image with respect to the image sensor, and the tracking control section performs drive control for at least one of the first image stabilization actuator and the second image stabilization actuator based on the movement direction and movement velocity that have been calculated by the calculation section, to perform tracking such that the subject image is always positioned at a specified position within the effective imaging region of the image sensor.
2
US2020027913A1
IMAGING ELEMENT AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020027913A1 Publication Date: 2020-01-23 Application Number: 16/484,985 Filing Date: 2018-02-02 Inventor: Nomura hirotoshi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion. The present technology is applicable to back-illuminated CMOS image sensors, for example.
3
US2020036929A1
SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020036929A1 Publication Date: 2020-01-30 Application Number: 16/591,279 Filing Date: 2019-10-02 Inventor: Nomura hirotoshi   Assignee: Sony Corporation   IPC: H04N5/372 Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.
4
US202027913A1
IMAGING ELEMENT AND ELECTRONIC APPARATUS
Publication/Patent Number: US202027913A1 Publication Date: 2020-01-23 Application Number: 20/181,648 Filing Date: 2018-02-02 Inventor: Nomura hirotoshi   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion. The present technology is applicable to back-illuminated CMOS image sensors, for example.
5
US202036929A1
SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS
Publication/Patent Number: US202036929A1 Publication Date: 2020-01-30 Application Number: 20/191,659 Filing Date: 2019-10-02 Inventor: Nomura hirotoshi   Assignee: Sony Corporation   IPC: H04N5/378 Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.
6
US10700114B2
Solid-state imaging element, method for manufacturing the same, and electronic apparatus
Publication/Patent Number: US10700114B2 Publication Date: 2020-06-30 Application Number: 15/737,402 Filing Date: 2017-04-11 Inventor: Honda, Hideyuki   Uchida, Tetsuya   Wakano, Toshifumi   Tanaka, Yusuke   Kudoh, Yoshiharu   Nomura hirotoshi   Hirano, Tomoyuki   Yoshida, Shinichi   Ueda, Yoichi   Nakanishi, Kosuke   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
7
US2020286937A1
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020286937A1 Publication Date: 2020-09-10 Application Number: 16/877,304 Filing Date: 2020-05-18 Inventor: Honda, Hideyuki   Uchida, Tetsuya   Wakano, Toshifumi   Tanaka, Yusuke   Kudoh, Yoshiharu   Nomura hirotoshi   Hirano, Tomoyuki   Yoshida, Shinichi   Ueda, Yoichi   Nakanishi, Kosuke   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
8
EP3593382A1
SOLID-STATE IMAGING APPARATUS AND ELECTRONIC APPARATUS
Publication/Patent Number: EP3593382A1 Publication Date: 2020-01-15 Application Number: 18710548.1 Filing Date: 2018-02-22 Inventor: Uchida, Tetsuya   Suzuki, Ryoji   Ansai, Hisahiro   Ueda, Yoichi   Yoshida, Shinichi   Takeya, Yukari   Hirano, Tomoyuki   Mori, Hiroyuki   Nomura hirotoshi   Kudoh, Yoshiharu   Ohura, Masashi   Iwabuchi, Shin   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146
9
US10237503B2
Solid-state imaging device and driving method thereof, and electronic apparatus
Publication/Patent Number: US10237503B2 Publication Date: 2019-03-19 Application Number: 15/630,735 Filing Date: 2017-06-22 Inventor: Nomura hirotoshi   Assignee: Sony Corporation   IPC: H04N5/372 Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.
10
US201974313A1
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: US201974313A1 Publication Date: 2019-03-07 Application Number: 20/181,618 Filing Date: 2018-11-06 Inventor: Nomura hirotoshi   Assignee: Sony Corporation   IPC: H04N5/378 Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
11
US2019074313A1
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: US2019074313A1 Publication Date: 2019-03-07 Application Number: 16/181,759 Filing Date: 2018-11-06 Inventor: Nomura hirotoshi   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
12
JP2019159268A
SHAKE CORRECTION DEVICE
Publication/Patent Number: JP2019159268A Publication Date: 2019-09-19 Application Number: 2018049877 Filing Date: 2018-03-16 Inventor: Nomura hirotoshi   Assignee: OLYMPUS CORP   IPC: H04N5/232 Abstract: To provide a shake correction device capable of reducing impact of high frequency noise generated from a coil.SOLUTION: A shake correction device 110 includes: a fixed part on which magnets 14, 15 are arranged; a movable part on which coils 11, 12 and an image pick-up device 1 are arranged and which moves with respect to the fixed part in a direction perpendicular to an optical axis O of the image pick-up device 1; and a conductive plate 6 preventing or reducing high frequency noise generated from the coils when current flows through the coils from affecting the image pick-up device.SELECTED DRAWING: Figure 3
13
US10403663B2
Solid-state imaging device and electronic apparatus including light shielding structures
Publication/Patent Number: US10403663B2 Publication Date: 2019-09-03 Application Number: 15/806,141 Filing Date: 2017-11-07 Inventor: Nomura hirotoshi   Assignee: Sony Corporation   IPC: H04N5/335 Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
14
US10491846B2
Solid-state imaging device and driving method thereof, and electronic apparatus
Publication/Patent Number: US10491846B2 Publication Date: 2019-11-26 Application Number: 16/265,346 Filing Date: 2019-02-01 Inventor: Nomura hirotoshi   Assignee: Sony Corporation   IPC: H04N5/372 Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.
15
US2019166324A1
SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2019166324A1 Publication Date: 2019-05-30 Application Number: 16/265,346 Filing Date: 2019-02-01 Inventor: Nomura hirotoshi   Assignee: Sony Corporation   IPC: H04N5/372 Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.
16
US10256269B2
Solid-state imaging element, imaging device, and electronic apparatus
Publication/Patent Number: US10256269B2 Publication Date: 2019-04-09 Application Number: 15/554,314 Filing Date: 2016-02-26 Inventor: Murase, Takuro   Nomura hirotoshi   Assignee: SONY CORPORATION   IPC: H01L31/062 Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic apparatus which enable enhancement of focusing accuracy and sensitivity and suppression of color mixing, in a high image height portion. Incident light is condensed by a main lens, and the condensed light is condensed by a plurality of on-chip lenses. The on-chip lenses are each shared by a plurality of photodiodes that receive the light condensed by the on-chip lens and that generate and accumulate electric charges corresponding to the amounts of light. The plurality of photodiodes sharing the on-chip lens are shaped, in accordance with the image height of the on-chip lens, in such a manner as to have substantially uniform light reception characteristics. The present technology is applicable to a CMOS image sensor.
17
US2019043901A1
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2019043901A1 Publication Date: 2019-02-07 Application Number: 15/737,402 Filing Date: 2017-04-11 Inventor: Honda, Hideyuki   Uchida, Tetsuya   Wakano, Toshifumi   Tanaka, Yusuke   Kudoh, Yoshiharu   Nomura hirotoshi   Hirano, Tomoyuki   Yoshida, Shinichi   Ueda, Yoichi   Nakanishi, Kosuke   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
18
US201943901A1
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: US201943901A1 Publication Date: 2019-02-07 Application Number: 20/171,573 Filing Date: 2017-04-11 Inventor: Hirano, Tomoyuki   Wakano, Toshifumi   Honda, Hideyuki   Kudoh, Yoshiharu   Ueda, Yoichi   Yoshida, Shinichi   Uchida, Tetsuya   Tanaka, Yusuke   Nomura hirotoshi   Nakanishi, Kosuke   Assignee: Sony Corporation   IPC: H04N5/378 Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
19
KR20190119029A
고체 촬상 장치, 및 전자 기기
Publication/Patent Number: KR20190119029A Publication Date: 2019-10-21 Application Number: 20197014055 Filing Date: 2018-02-22 Inventor: Mori, Hiroyuki   Suzuki, Ryoji   Yoshida, Shinichi   Iwabuchi, Shin   Kudoh, Yoshiharu   Nomura hirotoshi   Uchida, Tetsuya   Ueda, Yoichi   Hirano, Tomoyuki   Takeya, Yukari   Ansai, Hisahiro   Ohura, Masashi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: 화소마다 형성된 광전변환을 행하는 N형 영역; 반도체 기판을 깊이 방향으로 관통하고, 인접하는 화소 각각의 상기 광전변환을 행하는 N형 영역의 사이에 형성된 화소사이 차광벽; 상기 광전변환을 행하는 N형 영역과 상기 화소사이 차광벽 사이에 형성된 P형층; 및 상기 P형층에 인접하고, 상기 N형 영역과 상기 반도체 기판의 광입사면측 상의 계면 사이에 형성된 P형 영역을 포함하는 촬상 장치를 제공한다.
20
US201847775A1
SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND ELECTRONIC APPARATUS
Publication/Patent Number: US201847775A1 Publication Date: 2018-02-15 Application Number: 20/161,555 Filing Date: 2016-02-26 Inventor: Nomura hirotoshi   Nomura hirotoshi   Assignee: Sony Corporation   IPC: G01C3/06 Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic apparatus which enable enhancement of focusing accuracy and sensitivity and suppression of color mixing, in a high image height portion. Incident light is condensed by a main lens, and the condensed light is condensed by a plurality of on-chip lenses. The on-chip lenses are each shared by a plurality of photodiodes that receive the light condensed by the on-chip lens and that generate and accumulate electric charges corresponding to the amounts of light. The plurality of photodiodes sharing the on-chip lens are shaped, in accordance with the image height of the on-chip lens, in such a manner as to have substantially uniform light reception characteristics. The present technology is applicable to a CMOS image sensor.