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1 | US2020329199A1 |
TRACKING DEVICE AND TRACKING METHOD
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Publication/Patent Number: US2020329199A1 | Publication Date: 2020-10-15 | Application Number: 16/816,906 | Filing Date: 2020-03-12 | Inventor： Nomura hirotoshi | Assignee: OLYMPUS CORPORATION | IPC: H04N5/232 | Abstract: A tracking device, comprising a first image stabilization actuator that moves the image stabilization lens, a second image stabilization actuator that moves an image sensor, and a processor that has a calculation section, a determination section and a tracking control section, wherein the determination section determines whether or not a subject image exists at a specified position within an effective imaging region of the image sensor, the calculation section calculates movement direction and movement velocity for moving the subject image with respect to the image sensor, and the tracking control section performs drive control for at least one of the first image stabilization actuator and the second image stabilization actuator based on the movement direction and movement velocity that have been calculated by the calculation section, to perform tracking such that the subject image is always positioned at a specified position within the effective imaging region of the image sensor. | |||
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2 | US2020027913A1 |
IMAGING ELEMENT AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2020027913A1 | Publication Date: 2020-01-23 | Application Number: 16/484,985 | Filing Date: 2018-02-02 | Inventor： Nomura hirotoshi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion. The present technology is applicable to back-illuminated CMOS image sensors, for example. | |||
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3 | US2020036929A1 |
SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2020036929A1 | Publication Date: 2020-01-30 | Application Number: 16/591,279 | Filing Date: 2019-10-02 | Inventor： Nomura hirotoshi | Assignee: Sony Corporation | IPC: H04N5/372 | Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor. | |||
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4 | US202027913A1 |
IMAGING ELEMENT AND ELECTRONIC APPARATUS
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Publication/Patent Number: US202027913A1 | Publication Date: 2020-01-23 | Application Number: 20/181,648 | Filing Date: 2018-02-02 | Inventor： Nomura hirotoshi | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion. The present technology is applicable to back-illuminated CMOS image sensors, for example. | |||
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5 | US202036929A1 |
SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US202036929A1 | Publication Date: 2020-01-30 | Application Number: 20/191,659 | Filing Date: 2019-10-02 | Inventor： Nomura hirotoshi | Assignee: Sony Corporation | IPC: H04N5/378 | Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor. | |||
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6 | US10700114B2 |
Solid-state imaging element, method for manufacturing the same, and electronic apparatus
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Publication/Patent Number: US10700114B2 | Publication Date: 2020-06-30 | Application Number: 15/737,402 | Filing Date: 2017-04-11 | Inventor： Honda, Hideyuki Uchida, Tetsuya Wakano, Toshifumi Tanaka, Yusuke Kudoh, Yoshiharu Nomura hirotoshi Hirano, Tomoyuki Yoshida, Shinichi Ueda, Yoichi Nakanishi, Kosuke | Assignee: Sony Corporation | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object. | |||
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7 | US2020286937A1 |
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2020286937A1 | Publication Date: 2020-09-10 | Application Number: 16/877,304 | Filing Date: 2020-05-18 | Inventor： Honda, Hideyuki Uchida, Tetsuya Wakano, Toshifumi Tanaka, Yusuke Kudoh, Yoshiharu Nomura hirotoshi Hirano, Tomoyuki Yoshida, Shinichi Ueda, Yoichi Nakanishi, Kosuke | Assignee: SONY CORPORATION | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object. | |||
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8 | EP3593382A1 |
SOLID-STATE IMAGING APPARATUS AND ELECTRONIC APPARATUS
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Publication/Patent Number: EP3593382A1 | Publication Date: 2020-01-15 | Application Number: 18710548.1 | Filing Date: 2018-02-22 | Inventor： Uchida, Tetsuya Suzuki, Ryoji Ansai, Hisahiro Ueda, Yoichi Yoshida, Shinichi Takeya, Yukari Hirano, Tomoyuki Mori, Hiroyuki Nomura hirotoshi Kudoh, Yoshiharu Ohura, Masashi Iwabuchi, Shin | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | ||||
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9 | US10237503B2 |
Solid-state imaging device and driving method thereof, and electronic apparatus
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Publication/Patent Number: US10237503B2 | Publication Date: 2019-03-19 | Application Number: 15/630,735 | Filing Date: 2017-06-22 | Inventor： Nomura hirotoshi | Assignee: Sony Corporation | IPC: H04N5/372 | Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor. | |||
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10 | US201974313A1 |
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
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Publication/Patent Number: US201974313A1 | Publication Date: 2019-03-07 | Application Number: 20/181,618 | Filing Date: 2018-11-06 | Inventor： Nomura hirotoshi | Assignee: Sony Corporation | IPC: H04N5/378 | Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other. | |||
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11 | US2019074313A1 |
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2019074313A1 | Publication Date: 2019-03-07 | Application Number: 16/181,759 | Filing Date: 2018-11-06 | Inventor： Nomura hirotoshi | Assignee: Sony Corporation | IPC: H01L27/146 | Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other. | |||
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12 | JP2019159268A |
SHAKE CORRECTION DEVICE
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Publication/Patent Number: JP2019159268A | Publication Date: 2019-09-19 | Application Number: 2018049877 | Filing Date: 2018-03-16 | Inventor： Nomura hirotoshi | Assignee: OLYMPUS CORP | IPC: H04N5/232 | Abstract: To provide a shake correction device capable of reducing impact of high frequency noise generated from a coil.SOLUTION: A shake correction device 110 includes: a fixed part on which magnets 14, 15 are arranged; a movable part on which coils 11, 12 and an image pick-up device 1 are arranged and which moves with respect to the fixed part in a direction perpendicular to an optical axis O of the image pick-up device 1; and a conductive plate 6 preventing or reducing high frequency noise generated from the coils when current flows through the coils from affecting the image pick-up device.SELECTED DRAWING: Figure 3 | |||
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13 | US10403663B2 |
Solid-state imaging device and electronic apparatus including light shielding structures
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Publication/Patent Number: US10403663B2 | Publication Date: 2019-09-03 | Application Number: 15/806,141 | Filing Date: 2017-11-07 | Inventor： Nomura hirotoshi | Assignee: Sony Corporation | IPC: H04N5/335 | Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other. | |||
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14 | US10491846B2 |
Solid-state imaging device and driving method thereof, and electronic apparatus
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Publication/Patent Number: US10491846B2 | Publication Date: 2019-11-26 | Application Number: 16/265,346 | Filing Date: 2019-02-01 | Inventor： Nomura hirotoshi | Assignee: Sony Corporation | IPC: H04N5/372 | Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor. | |||
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15 | US2019166324A1 |
SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2019166324A1 | Publication Date: 2019-05-30 | Application Number: 16/265,346 | Filing Date: 2019-02-01 | Inventor： Nomura hirotoshi | Assignee: Sony Corporation | IPC: H04N5/372 | Abstract: A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor. | |||
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16 | US10256269B2 |
Solid-state imaging element, imaging device, and electronic apparatus
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Publication/Patent Number: US10256269B2 | Publication Date: 2019-04-09 | Application Number: 15/554,314 | Filing Date: 2016-02-26 | Inventor： Murase, Takuro Nomura hirotoshi | Assignee: SONY CORPORATION | IPC: H01L31/062 | Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic apparatus which enable enhancement of focusing accuracy and sensitivity and suppression of color mixing, in a high image height portion. Incident light is condensed by a main lens, and the condensed light is condensed by a plurality of on-chip lenses. The on-chip lenses are each shared by a plurality of photodiodes that receive the light condensed by the on-chip lens and that generate and accumulate electric charges corresponding to the amounts of light. The plurality of photodiodes sharing the on-chip lens are shaped, in accordance with the image height of the on-chip lens, in such a manner as to have substantially uniform light reception characteristics. The present technology is applicable to a CMOS image sensor. | |||
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17 | US2019043901A1 |
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US2019043901A1 | Publication Date: 2019-02-07 | Application Number: 15/737,402 | Filing Date: 2017-04-11 | Inventor： Honda, Hideyuki Uchida, Tetsuya Wakano, Toshifumi Tanaka, Yusuke Kudoh, Yoshiharu Nomura hirotoshi Hirano, Tomoyuki Yoshida, Shinichi Ueda, Yoichi Nakanishi, Kosuke | Assignee: SONY CORPORATION | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object. | |||
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18 | US201943901A1 |
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US201943901A1 | Publication Date: 2019-02-07 | Application Number: 20/171,573 | Filing Date: 2017-04-11 | Inventor： Hirano, Tomoyuki Wakano, Toshifumi Honda, Hideyuki Kudoh, Yoshiharu Ueda, Yoichi Yoshida, Shinichi Uchida, Tetsuya Tanaka, Yusuke Nomura hirotoshi Nakanishi, Kosuke | Assignee: Sony Corporation | IPC: H04N5/378 | Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object. | |||
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19 | KR20190119029A |
고체 촬상 장치, 및 전자 기기
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Publication/Patent Number: KR20190119029A | Publication Date: 2019-10-21 | Application Number: 20197014055 | Filing Date: 2018-02-22 | Inventor： Mori, Hiroyuki Suzuki, Ryoji Yoshida, Shinichi Iwabuchi, Shin Kudoh, Yoshiharu Nomura hirotoshi Uchida, Tetsuya Ueda, Yoichi Hirano, Tomoyuki Takeya, Yukari Ansai, Hisahiro Ohura, Masashi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: 화소마다 형성된 광전변환을 행하는 N형 영역; 반도체 기판을 깊이 방향으로 관통하고, 인접하는 화소 각각의 상기 광전변환을 행하는 N형 영역의 사이에 형성된 화소사이 차광벽; 상기 광전변환을 행하는 N형 영역과 상기 화소사이 차광벽 사이에 형성된 P형층; 및 상기 P형층에 인접하고, 상기 N형 영역과 상기 반도체 기판의 광입사면측 상의 계면 사이에 형성된 P형 영역을 포함하는 촬상 장치를 제공한다. | |||
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20 | US201847775A1 |
SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND ELECTRONIC APPARATUS
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Publication/Patent Number: US201847775A1 | Publication Date: 2018-02-15 | Application Number: 20/161,555 | Filing Date: 2016-02-26 | Inventor： Nomura hirotoshi Nomura hirotoshi | Assignee: Sony Corporation | IPC: G01C3/06 | Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic apparatus which enable enhancement of focusing accuracy and sensitivity and suppression of color mixing, in a high image height portion. Incident light is condensed by a main lens, and the condensed light is condensed by a plurality of on-chip lenses. The on-chip lenses are each shared by a plurality of photodiodes that receive the light condensed by the on-chip lens and that generate and accumulate electric charges corresponding to the amounts of light. The plurality of photodiodes sharing the on-chip lens are shaped, in accordance with the image height of the on-chip lens, in such a manner as to have substantially uniform light reception characteristics. The present technology is applicable to a CMOS image sensor. |
3.Current Quota