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1
US10622397B2
Semiconductor apparatus and equipment
Publication/Patent Number: US10622397B2 Publication Date: 2020-04-14 Application Number: 16/193,998 Filing Date: 2018-11-16 Inventor: Ishino, Hideaki   Ogino takumi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A semiconductor layer includes an opening, and in a joint surface between structures, a portion between a semiconductor layer and an opening in a direction in which the semiconductor layers are stacked together includes a plurality of conductor portions and an insulator portion located between the plurality of conductor portions in a direction orthogonal to the direction.
2
US2020091218A1
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: US2020091218A1 Publication Date: 2020-03-19 Application Number: 16/558,863 Filing Date: 2019-09-03 Inventor: Ikakura, Hiroshi   Ogino takumi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.
3
US2020286943A1
SEMICONDUCTOR APPARATUS AND DEVICE
Publication/Patent Number: US2020286943A1 Publication Date: 2020-09-10 Application Number: 16/803,791 Filing Date: 2020-02-27 Inventor: Tange, Tsutomu   Ogino takumi   Kobayashi, Hiroaki   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension.
4
US2020251518A1
SEMICONDUCTOR APPARATUS AND EQUIPMENT
Publication/Patent Number: US2020251518A1 Publication Date: 2020-08-06 Application Number: 16/749,221 Filing Date: 2020-01-22 Inventor: Ogino takumi   Kobayashi, Hiroaki   Tange, Tsutomu   Shimizu, Akihiro   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A semiconductor apparatus comprising: a first semiconductor component including a first semiconductor layer and a first insulation film; and a second semiconductor component including a second semiconductor layer and a second insulation film, wherein the first semiconductor component and the second semiconductor component are bonded to each other by each of a plurality of first electric conductor portions provided in the first insulation film and each of a plurality of second electric conductor portions provided in the second insulation film, each of the plurality of first electric conductor portions is constituted by one pad surrounded by the first insulation film and N vias bonded to the one pad so as to be positioned between the one pad and the first semiconductor layer, and a volume VTR of the one pad and a total volume VTH of the N vias satisfy VTR/VTH≥N.
5
US2020083263A1
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
Publication/Patent Number: US2020083263A1 Publication Date: 2020-03-12 Application Number: 16/556,964 Filing Date: 2019-08-30 Inventor: Tanaka, Yoshiei   Hirota, Katsunori   Onuki, Yusuke   Tange, Tsutomu   Ogino takumi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd<Hb”.
6
US2020127032A1
SEMICONDUCTOR DEVICE, APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Publication/Patent Number: US2020127032A1 Publication Date: 2020-04-23 Application Number: 16/597,973 Filing Date: 2019-10-10 Inventor: Ogino takumi   Ishino, Hideaki   Shimizu, Akihiro   Hirota, Katsunori   Tange, Tsutomu   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A semiconductor device comprising: a substrate; a semiconductor layer; and a wiring structure section between the substrate and the semiconductor layer, the wiring structure section including a plurality of stacked wiring layers and a plurality of stacked insulating films, the wiring structure section including an electrode, wherein an opening for connecting a member to the electrode is formed in the semiconductor layer and the wiring structure section; the semiconductor layer has an isolation region in which an insulating film is embedded and which surrounds the opening; the wiring structure section has a ring which is formed of the plurality of wiring layers and surround the opening; and a distance between the opening and the ring closest to the opening is larger than a distance between the opening and the isolation region closest to the opening.
7
US2019371836A1
PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM, MOVING BODY, AND MANUFACTURING METHOD FOR PHOTOELECTRIC CONVERSION APPARATUS
Publication/Patent Number: US2019371836A1 Publication Date: 2019-12-05 Application Number: 16/425,190 Filing Date: 2019-05-29 Inventor: Ogino takumi   Ishino, Hideaki   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A photoelectric conversion apparatus includes, a semiconductor substrate having a photoelectric conversion unit performing photoelectric conversion on entering light and accumulating first electric charges, a first transistor electrically connected to the photoelectric conversion unit and having a first gate on a second surface, and a second transistor having a second gate shorter than the first gate on the second surface, a first fixed charge film continuously provided directly or with an insulating film in between in an area overlapping the photoelectric conversion unit on a first surface and the second transistor, the first fixed charge film having fixed charges of the first polarity, and a second fixed charge film provided directly or with an insulating film in between in an area overlapping the second transistor and the first fixed charge film, the second fixed charge film having fixed charges of a second polarity.
8
US2019165027A1
SEMICONDUCTOR APPARATUS AND EQUIPMENT
Publication/Patent Number: US2019165027A1 Publication Date: 2019-05-30 Application Number: 16/193,998 Filing Date: 2018-11-16 Inventor: Ishino, Hideaki   Ogino takumi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A semiconductor layer includes an opening, and in a joint surface between structures, a portion between a semiconductor layer and an opening in a direction in which the semiconductor layers are stacked together includes a plurality of conductor portions and an insulator portion located between the plurality of conductor portions in a direction orthogonal to the direction.
9
JP2019102619A
SEMICONDUCTOR DEVICE AND EQUIPMENT
Publication/Patent Number: JP2019102619A Publication Date: 2019-06-24 Application Number: 2017230988 Filing Date: 2017-11-30 Inventor: Ishino, Hideaki   Ogino takumi   Assignee: CANON INC   IPC: H04N5/369 Abstract: To improve reliability of a semiconductor device.SOLUTION: A semiconductor layer 200 has an opening 302. Of a joint surface 300 between a structural body 10 and a structural body 20, a portion 304 between a semiconductor layer 100 and the opening 302 in a direction Z in which the semiconductor layer 100 and the semiconductor layer 200 are stacked includes: a plurality of conductor portions 216; and an insulator portion positioned between the plurality of conductor portions 216 in a direction X orthogonal to the direction Z.SELECTED DRAWING: Figure 1
10
US10026774B2
Method of manufacturing solid-state image sensor and solid-state image sensor
Publication/Patent Number: US10026774B2 Publication Date: 2018-07-17 Application Number: 14/722,681 Filing Date: 2015-05-27 Inventor: Torii, Keita   Ogino takumi   Fujita, Masato   Shimotsusa, Mineo   Kakinuma, Nobuaki   Itahashi, Masatsugu   Onuki, Yusuke   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A method of manufacturing a solid-state image sensor including preparing a wafer including a pixel region where a photoelectric conversion element is provided, a peripheral circuit region where a gate electrode of a peripheral MOS transistor for constituting a peripheral circuit is provided, and a scribe region. The method includes forming an insulating film covering the pixel region, the peripheral circuit region, and the scribe region, and forming a sidewall spacer on a side surface of the gate electrode by etching the insulating film so that portions of the insulating film remains to cover the pixel region and the scribe region, and forming a metal silicide layer in the peripheral circuit region by using, as a mask for protection from silicidation, the insulating film covering the pixel region and the scribe region.
11
JP2017212371A
固体撮像装置及びその製造方法ならびにカメラ
Title (English): Solid state camera device, method of manufacture and camera
Publication/Patent Number: JP2017212371A Publication Date: 2017-11-30 Application Number: 2016105445 Filing Date: 2016-05-26 Inventor: Ogino takumi   Assignee: CANON INC   IPC: H01L21/318 Abstract: 【課題】電荷保持部の遮光性を向上することによって、得られる画像の画質の低下を抑制する技術を提供する。【解決手段】光電変換部と電荷保持部と転送トランジスタとを含む画素が配された画素領域を含む基板と光電変換部の上に配された絶縁体と画素領域の上に配され絶縁体を囲むように配された層間絶縁膜とトランジスタと接続される配線層と遮光部とを含む固体撮像装置であって、層間絶縁膜は基板に最も近い配線層と基板との間に配された第1の層間絶縁膜を含み、絶縁体は層間絶縁膜よりも屈折率が高く第1の層間絶縁膜によって囲まれる第1の絶縁体を含み、遮光部は電荷保持部の上に配される部分と第1の層間絶縁膜と第1の絶縁体の側面との間に配される第1の部分とを含み、基板の表面と平行で転送トランジスタのゲート電極の上面と接する断面において、第1の部分が第1の層間絶縁膜と第1の絶縁体との間に位置する部分を含む。【選択図】図3
12
US9769401B2
Solid-state imaging apparatus, method of manufacturing the same, and camera
Publication/Patent Number: US9769401B2 Publication Date: 2017-09-19 Application Number: 15/179,035 Filing Date: 2016-06-10 Inventor: Ogino takumi   Ikakura, Hiroshi   Hayakawa, Yukihiro   Assignee: Canon Kabushiki Kaisha   IPC: H04N5/335 Abstract: A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.
13
JP2017011037A
SOLID-STATE IMAGE PICKUP DEVICE
Publication/Patent Number: JP2017011037A Publication Date: 2017-01-12 Application Number: 2015123107 Filing Date: 2015-06-18 Inventor: Hayakawa, Yukihiro   Ikakura, Hiroshi   Ogino takumi   Assignee: CANON INC   IPC: H01L27/14 Abstract: PROBLEM TO BE SOLVED: To provide a technique that is advantageous to suppression of occurrence of noise in a solid-state image pickup device.SOLUTION: A solid-state image pickup device includes a substrate on which photoelectric conversion elements are arranged
14
JP2017011038A
METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE
Publication/Patent Number: JP2017011038A Publication Date: 2017-01-12 Application Number: 2015123108 Filing Date: 2015-06-18 Inventor: Hayakawa, Yukihiro   Ikakura, Hiroshi   Ogino takumi   Assignee: CANON INC   IPC: H01L27/14 Abstract: PROBLEM TO BE SOLVED: To provide a technique of suppressing image unevenness and color shading in a solid-state image pickup device.SOLUTION: A method for manufacturing a solid-state image pickup device includes a step of forming a first structure containing a first insulating film having plural first opening portions respectively disposed on plural photoelectric conversion elements
15
US9570506B2
Photoelectric conversion device and manufacturing method of the same
Publication/Patent Number: US9570506B2 Publication Date: 2017-02-14 Application Number: 14/700,391 Filing Date: 2015-04-30 Inventor: Endo, Nobuyuki   Hirota, Katsunori   Ogino takumi   Kusukawa, Masashi   Tamura, Seiichi   Assignee: Canon Kabushiki Kaisha   IPC: H01L27/146 Abstract: A photoelectric conversion device includes a pixel circuit section including: a first semiconductor region containing a first conductivity type impurity; a second semiconductor region formed in the first semiconductor region by using the first conductivity type impurity; a third semiconductor region formed in the second semiconductor region by using a second conductivity type impurity; and a contact plug formed on the third semiconductor region. A net concentration of the first conductivity type impurity is higher in the second semiconductor region than in the first and third semiconductor regions. In the second and third semiconductor regions, a distance between the contact plug and a position where the concentration of the second conductivity type impurity is maximum is equal to or less than a distance between the contact plug and a position where the concentration of the first conductivity type impurity is maximum.
16
US9716126B2
Method of manufacturing solid-state image sensor
Publication/Patent Number: US9716126B2 Publication Date: 2017-07-25 Application Number: 14/726,769 Filing Date: 2015-06-01 Inventor: Itahashi, Masatsugu   Kakinuma, Nobuaki   Shimotsusa, Mineo   Fujita, Masato   Onuki, Yusuke   Ogino takumi   Torii, Keita   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A method of manufacturing a solid-state image sensor includes forming a first element isolation and a first active region of a pixel area, and a second isolation and a second active region of a peripheral circuit area, forming a gate electrode film covering the first element isolation, the first active region, the second element isolation and the second active region, implanting an n-type impurity selectively into at least a part of the gate electrode film corresponding to the pixel area, and forming, after the implanting of the n-type impurity, a first gate electrode of the pixel area and a second gate electrode of the peripheral circuit area by patterning the gate electrode film. The part of the gate electrode film includes a portion located above a boundary between the first element isolation and the first active region.
17
US2016373665A1
SOLID-STATE IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND CAMERA
Publication/Patent Number: US2016373665A1 Publication Date: 2016-12-22 Application Number: 15/179,035 Filing Date: 2016-06-10 Inventor: Ogino takumi   Ikakura, Hiroshi   Hayakawa, Yukihiro   Assignee: CANON KABUSHIKI KAISHA   IPC: H04N5/357 Abstract: A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.
18
JP2016004838A
METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE
Publication/Patent Number: JP2016004838A Publication Date: 2016-01-12 Application Number: 2014122747 Filing Date: 2014-06-13 Inventor: Shimotsusa, Mineo   Fujita, Masato   Kakinuma, Nobuaki   Itabashi, Masaji   Torii, Keita   Onuki, Yusuke   Ogino takumi   Assignee: CANON INC   IPC: H01L27/146 Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging device capable of suppressing deterioration of characteristics of a solid-state imaging element in which a metal silicide layer is formed.SOLUTION: A method includes the following steps of: preparing a wafer that has a pixel region 111
19
JP2016001709A
SOLID STATE IMAGE PICKUP DEVICE MANUFACTURING METHOD
Publication/Patent Number: JP2016001709A Publication Date: 2016-01-07 Application Number: 2014121849 Filing Date: 2014-06-12 Inventor: Shimotsusa, Mineo   Fujita, Masato   Kakinuma, Nobuaki   Itabashi, Masaji   Torii, Keita   Onuki, Yusuke   Ogino takumi   Assignee: CANON INC   IPC: H01L27/146 Abstract: PROBLEM TO BE SOLVED: To reduce potential occurrence of an etching residue when patterning a gate electrode film of a pixel part.SOLUTION: A manufacturing method of a solid state image pickup device having a pixel part and a peripheral circuit part comprises: a process of forming on a semiconductor substrate
20
JP2015005665A
IMAGING APPARATUS AND DESIGN METHOD AND MANUFACTURING METHOD FOR THE SAME
Publication/Patent Number: JP2015005665A Publication Date: 2015-01-08 Application Number: 2013131056 Filing Date: 2013-06-21 Inventor: Ogino takumi   Assignee: CANON INC   IPC: H01L27/14 Abstract: PROBLEM TO BE SOLVED: To provide a technique for further improving sensitivity of pixels in an imaging apparatus including pixels of a plurality of sorts.SOLUTION: The imaging apparatus including pixels of a plurality of sorts is provided. Each of the pixels of the plurality of sorts includes a conversion element for converting light into electric charge and a filter of any one sort out of a plurality of sorts of filters respectively capable of transmitting light beams of mutually different wavelength bands. A pixel of a first sort out of the pixels of the plurality of sorts further includes an optical waveguide for guiding incident light on the pixel to the conversion element. A pixel of a second sort out of the pixels of the plurality of sorts does not have a structure corresponding to the optical waveguide.