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1 | US2020075646A1 |
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND CAMERA
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Publication/Patent Number: US2020075646A1 | Publication Date: 2020-03-05 | Application Number: 16/550,484 | Filing Date: 2019-08-26 | Inventor： Onuki yusuke | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A back-side illuminated imaging device includes a substrate including a photoelectric conversion region, a contact plug connecting a wiring layer and the substrate, and a capacitive element including a first metal electrode and a second metal electrode disposed between the first metal electrode and the substrate. A distance between the second metal electrode and the substrate is shorter than a length of the contact plug. The second metal electrode overlaps at least a part of the photoelectric conversion region in a planar view with respect to a main surface of the substrate. | |||
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2 | US2020176491A1 |
PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM, AND MOVING OBJECT
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Publication/Patent Number: US2020176491A1 | Publication Date: 2020-06-04 | Application Number: 16/693,114 | Filing Date: 2019-11-22 | Inventor： Ikeda, Hajime Onuki yusuke | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A photoelectric conversion apparatus includes a first semiconductor region of a first conductivity type at a first depth from a first surface, a second semiconductor region of a second conductivity type disposed at a second depth deeper than the first depth from the first surface so as to be in contact with the first semiconductor region, and a third semiconductor region of the second conductivity type extending from the first surface to a third depth shallower than the second depth and being in contact with the first semiconductor region and the second semiconductor region. The third semiconductor region has a higher impurity concentration than the second semiconductor region. A second electric potential lower than the first electric potential for a carrier of the first conductivity type is applied to the third semiconductor region. The second semiconductor region has an impurity concentration of 1×1012 [atom/cm3] or less. | |||
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3 | US2020135786A1 |
PHOTOELECTRIC CONVERSION APPARATUS HAVING METAL PORTION, IMAGING SYSTEM, MOVABLE BODY, AND SEMICONDUCTOR CHIP FOR STACKING
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Publication/Patent Number: US2020135786A1 | Publication Date: 2020-04-30 | Application Number: 16/661,903 | Filing Date: 2019-10-23 | Inventor： Onuki yusuke Inui, Fumihiro | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A photoelectric conversion apparatus includes a semiconductor substrate, a floating diffusion, an amplifying transistor, first and second contact plugs, a wire, and a metal portion. The semiconductor substrate has a first plane and a second plane to be entered by light, and includes a photoelectric conversion element. The amplifying transistor includes a first gate electrode. The first contact plug is connected to the floating diffusion. The second contact plug is connected to the first gate electrode. The wire is configured to electrically connect the first gate electrode and the floating diffusion to each other. The metal portion, which is arranged between the first plane and a third plane, covers at least a part of the photoelectric conversion element in a planar view, and has an opening over which at least a part of the wire is superimposed in a planar view. | |||
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4 | US10615205B2 |
Imaging apparatus, imaging system, and moving body
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Publication/Patent Number: US10615205B2 | Publication Date: 2020-04-07 | Application Number: 15/982,975 | Filing Date: 2018-05-17 | Inventor： Sekine, Hiroshi Onuki yusuke | Assignee: Canon Kabushiki Kaisha | IPC: H04N5/359 | Abstract: An imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and a charge holding unit configured to hold an electric charge generated in the photoelectric conversion unit, a waveguide disposed above the photoelectric conversion unit, and a light blocking unit configured to cover the charge holding unit, wherein a width of a bottom surface of the waveguide is smaller than 1.1 μm. | |||
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5 | US2020176490A1 |
PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION SYSTEM, AND MOBILE APPARATUS
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Publication/Patent Number: US2020176490A1 | Publication Date: 2020-06-04 | Application Number: 16/690,008 | Filing Date: 2019-11-20 | Inventor： Ikeda, Hajime Onuki yusuke | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A photoelectric conversion device includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The first semiconductor region is of a first conductivity type provided at a position at which a depth from a first face is a first depth. The second semiconductor region is of the second conductivity type provided at a second depth deeper than the first depth, contacting with the first semiconductor region, and applied with a first electric potential from a second face side. The third semiconductor region is of the second conductivity type extending from the first depth to a third depth shallower than the second depth, contacting with the first and second semiconductor regions. The third semiconductor region has a higher impurity concentration than the second semiconductor region, and is applied with a second electric potential lower than the first electric potential. | |||
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6 | US2020194483A1 |
IMAGING APPARATUS, IMAGING SYSTEM, AND MOVING BODY
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Publication/Patent Number: US2020194483A1 | Publication Date: 2020-06-18 | Application Number: 16/803,697 | Filing Date: 2020-02-27 | Inventor： Sekine, Hiroshi Onuki yusuke | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and a charge holding unit configured to hold an electric charge generated in the photoelectric conversion unit, a waveguide disposed above the photoelectric conversion unit, and a light blocking unit configured to cover the charge holding unit, wherein a width of a bottom surface of the waveguide is smaller than 1.1 μm. | |||
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7 | US10748954B2 |
Solid-state image pickup device
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Publication/Patent Number: US10748954B2 | Publication Date: 2020-08-18 | Application Number: 16/798,179 | Filing Date: 2020-02-21 | Inventor： Kobayashi, Masahiro Onuki yusuke Koizumi, Toru | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L21/00 | Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit. | |||
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8 | US10833111B2 |
Solid-state imaging apparatus
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Publication/Patent Number: US10833111B2 | Publication Date: 2020-11-10 | Application Number: 16/258,169 | Filing Date: 2019-01-25 | Inventor： Onuki yusuke Kobayashi, Masahiro Miki, Takafumi | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor. | |||
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9 | US10805563B2 |
Solid state imaging device having a charge draining mechanism
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Publication/Patent Number: US10805563B2 | Publication Date: 2020-10-13 | Application Number: 16/040,144 | Filing Date: 2018-07-19 | Inventor： Ikeda, Hajime Kobayashi, Masahiro Sekine, Hiroshi Onuki yusuke | Assignee: CANON KABUSHIKI KAISHA | IPC: H04N5/335 | Abstract: According to an aspect of the present invention, provided is a solid state imaging device including a plurality of pixels, and each of the pixels has a charge accumulation region of a first conductivity type that accumulates signal charges corresponding to an incident light, a drain region of the first conductivity type to which a predetermined voltage is applied, a drain gate located between the drain region and the charge accumulation region in a planar view, and a semiconductor region of the first conductivity type connected to the charge accumulation region and the drain region. | |||
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10 | US10848695B2 |
Solid state imaging device, imaging system, and manufacturing method of solid state imaging device
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Publication/Patent Number: US10848695B2 | Publication Date: 2020-11-24 | Application Number: 15/872,208 | Filing Date: 2018-01-16 | Inventor： Miki, Takafumi Kobayashi, Masahiro Onuki yusuke Sekine, Hiroshi | Assignee: CANON KABUSHIKI KAISHA | IPC: H04N5/359 | Abstract: A solid state imaging device as an embodiment has a first transfer unit that includes a first gate and transfers charges from a photoelectric conversion portion to a holding portion; a second transfer unit that includes a second gate and transfers charges from the holding portion to a floating diffusion portion; and a third transfer unit that includes a third gate and drains charges from the photoelectric conversion portion to the charge draining portion. The impurity concentration of a second conductivity type in at least a part of a region under the first gate of the first transfer unit is lower than the impurity concentration of the second conductivity type in a region under the second gate of the second transfer unit and the impurity concentration of the second conductivity type in a region under the third gate of the third transfer unit. | |||
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11 | US2020328245A1 |
SOLID-STATE IMAGE PICKUP DEVICE
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Publication/Patent Number: US2020328245A1 | Publication Date: 2020-10-15 | Application Number: 16/915,181 | Filing Date: 2020-06-29 | Inventor： Kobayashi, Masahiro Onuki yusuke Koizumi, Toru | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit. | |||
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12 | US202021760A1 |
SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM
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Publication/Patent Number: US202021760A1 | Publication Date: 2020-01-16 | Application Number: 20/191,657 | Filing Date: 2019-09-23 | Inventor： Kobayashi, Masahiro Ichikawa, Takeshi Totsuka, Hirofumi Onuki yusuke | Assignee: Canon Kabushiki Kaisha | IPC: H04N5/3745 | Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region. | |||
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13 | US10608038B2 |
Solid-state image pickup device
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Publication/Patent Number: US10608038B2 | Publication Date: 2020-03-31 | Application Number: 15/876,697 | Filing Date: 2018-01-22 | Inventor： Kobayashi, Masahiro Onuki yusuke Koizumi, Toru | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L21/00 | Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit. | |||
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14 | US2020194487A1 |
SOLID-STATE IMAGE PICKUP DEVICE
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Publication/Patent Number: US2020194487A1 | Publication Date: 2020-06-18 | Application Number: 16/798,179 | Filing Date: 2020-02-21 | Inventor： Kobayashi, Masahiro Onuki yusuke Koizumi, Toru | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit. | |||
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15 | US10644049B2 |
Imaging device and imaging system
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Publication/Patent Number: US10644049B2 | Publication Date: 2020-05-05 | Application Number: 15/844,140 | Filing Date: 2017-12-15 | Inventor： Sekine, Hiroshi Onuki yusuke Kawabata, Kazunari | Assignee: CANON KABUSHIKI KAISHA | IPC: H04N5/232 | Abstract: In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction. | |||
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16 | US2020021760A1 |
SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM
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Publication/Patent Number: US2020021760A1 | Publication Date: 2020-01-16 | Application Number: 16/579,019 | Filing Date: 2019-09-23 | Inventor： Kobayashi, Masahiro Ichikawa, Takeshi Totsuka, Hirofumi Onuki yusuke | Assignee: CANON KABUSHIKI KAISHA | IPC: H04N5/361 | Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region. | |||
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17 | US10764520B2 |
Solid state imaging device
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Publication/Patent Number: US10764520B2 | Publication Date: 2020-09-01 | Application Number: 15/872,190 | Filing Date: 2018-01-16 | Inventor： Onuki yusuke Matsuno, Yasushi Miki, Takafumi | Assignee: CANON KABUSHIKI KAISHA | IPC: H04N5/365 | Abstract: A disclosed embodiment includes: semiconductor substrate including a pixel region in which a plurality of pixels are arranged, each of the pixels including a photoelectric conversion unit configured to accumulate charges generated from an incident light, a charge holding portion configured to hold the charges transferred from the photoelectric conversion unit, and an amplification unit including an input node configured to receive the charges transferred from the charge holding portion; a light-shielding portion arranged so as to cover at least the charge holding portion and extending over at least two or more of the plurality of pixels; a contact plug connected to the light-shielding portion; and a wiring connected to the contact plug to supply a fixed potential to the light-shielding portion via the contact plug. | |||
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18 | US2020227457A1 |
IMAGING DEVICE AND IMAGING SYSTEM
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Publication/Patent Number: US2020227457A1 | Publication Date: 2020-07-16 | Application Number: 16/834,735 | Filing Date: 2020-03-30 | Inventor： Sekine, Hiroshi Onuki yusuke Kawabata, Kazunari | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction. | |||
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19 | US10771718B2 |
Imaging device and imaging system
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Publication/Patent Number: US10771718B2 | Publication Date: 2020-09-08 | Application Number: 16/233,920 | Filing Date: 2018-12-27 | Inventor： Kawabata, Kazunari Ichikawa, Takeshi Kobayashi, Masahiro Onuki yusuke Sekine, Hiroshi | Assignee: CANON KABUSHIKI KAISHA | IPC: H04N5/355 | Abstract: An imaging device includes pixels including a photoelectric conversion unit, a holding unit holding charge transferred from the photoelectric conversion unit, and an amplifier unit outputting signal based on the charge. The pixels output a first signal based on charge generated in a first exposure period and a second signal based on charge generated in a second exposure period of different length. In the first exposure period, the photoelectric conversion unit accumulates the generated charge, and charge held by the holding unit is transferred to the amplifier unit. The second exposure period includes a period of accumulating the generated charge only in the photoelectric conversion unit and a period of holding the generated charge in the photoelectric conversion unit and the holding unit. In the period of accumulating the generated charge only in the photoelectric conversion unit, the charge held by the holding unit is transferred to the amplifier unit. | |||
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20 | US2020111828A1 |
IMAGING DEVICE AND IMAGING SYSTEM
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Publication/Patent Number: US2020111828A1 | Publication Date: 2020-04-09 | Application Number: 16/708,079 | Filing Date: 2019-12-09 | Inventor： Onuki yusuke Shinohara, Mahito Ikeda, Hajime Miki, Takafumi Sekine, Hiroshi | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS≤QMEM_SAT. |
3.Current Quota