My View
My Keyword Group
My Searches
Analyze
Patent Alerts
All
(0)
Total 127 results Used time 0.017 s
No. | Publication Number | Title | Publication/Patent Number Publication/Patent Number |
Publication Date
Publication Date
|
Application Number Application Number |
Filing Date
Filing Date
|
Inventor Inventor | Assignee Assignee |
IPC
IPC
|
|||||
![]() |
1 | US10756130B2 |
Solid-state image sensor and electronic device
|
Publication/Patent Number: US10756130B2 | Publication Date: 2020-08-25 | Application Number: 15/912,186 | Filing Date: 2018-03-05 | Inventor: Miyazawa, Shinji Ooka yutaka | Assignee: Sony Corporation | IPC: H01L27/00 | Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate. | |||
![]() |
2 | US2020279883A1 |
SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE
|
Publication/Patent Number: US2020279883A1 | Publication Date: 2020-09-03 | Application Number: 16/874,442 | Filing Date: 2020-05-14 | Inventor: Miyazawa, Shinji Ooka yutaka | Assignee: SONY CORPORATION | IPC: H01L27/146 | Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate. | |||
![]() |
3 | EP3540776A3 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
|
Publication/Patent Number: EP3540776A3 | Publication Date: 2020-01-08 | Application Number: 19173175.1 | Filing Date: 2014-12-12 | Inventor: Komai, Naoki Sasaki, Naoto Ogawa, Naoki Oinoue, Takashi Iwamoto, Hayato Ooka yutaka Nagata, Masaya | Assignee: Sony Corporation | IPC: H01L27/146 | Abstract: A semiconductor device (1) includes a first semiconductor substrate (12) in which a pixel region (21) where pixel portions performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate (11) in which a logic circuit (23) processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate (18) protecting an on-chip lens (16) is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin (17) interposed therebetween. | |||
![]() |
4 | US10608028B2 |
Image sensor having improved dicing properties
|
Publication/Patent Number: US10608028B2 | Publication Date: 2020-03-31 | Application Number: 16/045,973 | Filing Date: 2018-07-26 | Inventor: Yamamoto, Atsushi Miyazawa, Shinji Ooka yutaka Maeda, Kensaku Moriya, Yusuke Ogawa, Naoki Fujii, Nobutoshi Furuse, Shunsuke Nagata, Masaya Yamamoto, Yuichi | Assignee: SONY CORPORATION | IPC: H01L27/00 | Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor. | |||
![]() |
5 | WO2020017205A1 |
IMAGING ELEMENT AND ELECTRONIC DEVICE
|
Publication/Patent Number: WO2020017205A1 | Publication Date: 2020-01-23 | Application Number: 2019023618 | Filing Date: 2019-06-14 | Inventor: Yoshida, Hirokazu Ishii, Wataru Matsuoka, Shinichi Kamei, Takahiro Ooka yutaka Masuda, Yoshiaki Saito, Sotetsu Sato, Naoki | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/369 | Abstract: An imaging element according to one embodiment of the present invention includes: a sensor substrate which has a light-receiving region in which a plurality of light-receiving elements is arranged and a surrounding region provided around the light-receiving region; a sealing member that is disposed facing one side of the sensor substrate; a resin layer that bonds together the sensor substrate and the sealing member; and a recessed part which is provided in the surrounding region on the one side of the sensor substrate and which has the resin layer embedded therein. The resin layer has one or a plurality of voids on the inside of the recessed part in plan view. | |||
![]() |
6 | US2020273897A1 |
IMAGE SENSOR HAVING IMPROVED DICING PROPERTIES, MANUFACTURING APPARATUS, AND MANUFACTURING METHOD OF THE SAME
|
Publication/Patent Number: US2020273897A1 | Publication Date: 2020-08-27 | Application Number: 16/807,049 | Filing Date: 2020-03-02 | Inventor: Yamamoto, Atsushi Miyazawa, Shinji Ooka yutaka Maeda, Kensaku Moriya, Yusuke Ogawa, Naoki Fujii, Nobutoshi Furuse, Shunsuke Nagata, Masaya Yamamoto, Yuichi | Assignee: SONY CORPORATION | IPC: H01L27/146 | Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor. | |||
![]() |
7 | US2019214418A1 |
SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE
|
Publication/Patent Number: US2019214418A1 | Publication Date: 2019-07-11 | Application Number: 16/328,717 | Filing Date: 2017-08-04 | Inventor: Sasaki, Naoto Ooka yutaka | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer. | |||
![]() |
8 | US10236315B2 |
Solid-state image pickup element, image pickup apparatus, electronic apparatus, and production method
|
Publication/Patent Number: US10236315B2 | Publication Date: 2019-03-19 | Application Number: 14/775,879 | Filing Date: 2014-03-14 | Inventor: Ooka yutaka Miyazawa, Shinji Maeda, Kensaku Yamamoto, Atsushi | Assignee: Sony Corporation | IPC: H01L27/14 | Abstract: Provided is a solid-state image pickup element including: a sensor unit configured to generate an electrical signal in response to incident light; a color filter covering the sensor unit; and a lens configured to concentrate the incident light into the sensor unit via the color filter and formed by a laminated film made of a predetermined lens material. The lens is formed on the color filter without providing a planarization layer for removing a difference in level in the color filter. | |||
![]() |
9 | WO2019065294A1 |
IMAGING ELEMENT, METHOD FOR MANUFACTURING IMAGING ELEMENT, AND ELECTRONIC DEVICE
|
Publication/Patent Number: WO2019065294A1 | Publication Date: 2019-04-04 | Application Number: 2018034126 | Filing Date: 2018-09-14 | Inventor: Ooka yutaka Yamamoto, Atsushi Takimoto, Kaori | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: G03B17/02 | Abstract: The present technology pertains to: an imaging element configured so as to be capable of precisely controlling the installation height of a lens; a method for manufacturing the imaging element; and an electronic device. The imaging element comprises: a laminated lens structure in which lens-attached substrates each having a lens disposed inside a through hole formed in the substrate are pasted together by direct bonding such that a plurality of lenses are laminated in the optical axis direction; an imaging unit which photoelectrically converts incident light condensed by the plurality of lenses of the laminated lens structure; a protective substrate which protects the imaging unit; and a spacer which is disposed between the protective substrate and the laminated lens structure. The present technology can be applied to a camera module or the like, for example. | |||
![]() |
10 | JP2019067868A |
IMAGE SENSOR, MANUFACTURING METHOD OF IMAGE SENSOR, AND ELECTRONIC DEVICE
|
Publication/Patent Number: JP2019067868A | Publication Date: 2019-04-25 | Application Number: 2017190421 | Filing Date: 2017-09-29 | Inventor: Ooka yutaka Takimoto, Kaori Yamamoto, Atsushi | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORP | IPC: G02B1/115 | Abstract: To control lens installation height with high precision.SOLUTION: An image sensor includes a laminated lens structure in which lens-equipped substrates in which lenses are arranged inside through holes formed on a substrate are directly bonded to each other and the plurality of lenses are laminated in the optical axis direction, an imaging unit that photoelectrically converts incident light collected by the plurality of lenses of the laminated lens structure, a protection substrate that protects the imaging unit, and a spacer disposed between the protection substrate and the laminated lens structure. The present technology can be applied to, for example, a camera module and the like.SELECTED DRAWING: Figure 143 | |||
![]() |
11 | EP2980849B1 |
SEMICONDUCTOR IMAGE PICKUP ELEMENT, IMAGE PICKUP APPARATUS, ELECTRONIC APPARATUS, AND MANUFACTURING METHOD
|
Publication/Patent Number: EP2980849B1 | Publication Date: 2019-09-11 | Application Number: 14773969.2 | Filing Date: 2014-03-14 | Inventor: Ooka yutaka Miyazawa, Shinji Maeda, Kensaku Yamamoto, Atsushi | Assignee: Sony Corporation | IPC: H01L27/146 | ||||
![]() |
12 | TW201933599A |
Solid-state image pickup element, image pickup apparatus, electronic apparatus, and manufacturing method
|
Publication/Patent Number: TW201933599A | Publication Date: 2019-08-16 | Application Number: 108116424 | Filing Date: 2014-03-03 | Inventor: Maeda, Kensaku Yamamoto, Atsushi Miyazawa, Shinji Ooka yutaka | Assignee: Sony Corporation | IPC: H01L27/146 | Abstract: The present disclosure relates to: a solid-state image pickup element wherein sensitivity deterioration of the solid-state image pickup element is suppressed; an image pickup apparatus; an electronic apparatus; and a manufacturing method. According to one aspect of the present disclosure, a solid-state image pickup element is provided with: a sensor section that generates electric signals corresponding to inputted light; a color filter with which the sensor section is covered; and a lens for collecting the inputted light to the sensor section through the color filter, said lens being formed of a laminated film that is formed of a predetermined lens material. The lens is formed on an upper layer of the color filter without being provided with a planarizing layer for eliminating a step of the color filter. The present disclosure is applicable to solid-state image pickup elements, and also to image pickup apparatuses, and electronic apparatuses having an image pickup section. | |||
![]() |
13 | EP3084831B1 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
|
Publication/Patent Number: EP3084831B1 | Publication Date: 2019-05-08 | Application Number: 14821306.9 | Filing Date: 2014-12-12 | Inventor: Komai, Naoki Sasaki, Naoto Ogawa, Naoki Oinoue, Takashi Iwamoto, Hayato Ooka yutaka Nagata, Masaya | Assignee: Sony Corporation | IPC: H01L27/146 |