| No. | Publication Number | Title | Publication/Patent Number Publication/Patent Number |
Publication Date
Publication Date
|
Application Number Application Number |
Filing Date
Filing Date
|
Inventor Inventor | Assignee Assignee |
IPC
IPC
|
|||||
|
1 | US2021005656A1 |
IMAGING ELEMENT AND METHOD OF MANUFACTURING IMAGING ELEMENT
|
Publication/Patent Number: US2021005656A1 | Publication Date: 2021-01-07 | Application Number: 16/976,749 | Filing Date: 2019-01-21 | Inventor： Shibayama, Toshikazu Moriya, Yusuke Mitsunaga, Nobuyuki | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/146 | Abstract: To reduce reflection of incident light in an imaging element having a transparent resin arranged on a surface of a microlens. The imaging element includes a pixel, a microlens, a transparent resin layer, and a sealing glass. The pixel is formed on a semiconductor substrate and generates an image signal according to radiated light. The microlens is arranged adjacent to the pixel, collects incident light, irradiates the pixel with the incident light, and flattens a surface of the pixel. The transparent resin layer is arranged adjacent to the microlens and has a refractive index different from a refractive index of the microlens by a predetermined difference. The sealing glass is arranged adjacent to the transparent resin and seals the semiconductor substrate. | |||
|
|
2 | US10529764B2 |
Semiconductor device, solid state imaging element, and electronic apparatus
|
Publication/Patent Number: US10529764B2 | Publication Date: 2020-01-07 | Application Number: 15/023,481 | Filing Date: 2014-10-24 | Inventor： Kobayashi, Shoji Iwabuchi, Shin Shibayama, Toshikazu Suzuki, Mamoru Maruyama, Shunsuke | Assignee: Sony Corporation | IPC: H01L27/146 | Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example. | |||
|
|
3 | US2020111830A1 |
SEMICONDUCTOR DEVICE, SOLID STATE IMAGING ELEMENT, AND ELECTRONIC APPARATUS
|
Publication/Patent Number: US2020111830A1 | Publication Date: 2020-04-09 | Application Number: 16/709,539 | Filing Date: 2019-12-10 | Inventor： Kobayashi, Shoji Iwabuchi, Shin Shibayama, Toshikazu Suzuki, Mamoru Maruyama, Shunsuke | Assignee: SONY CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example. | |||
|
4 | WO2019171787A1 |
IMAGING ELEMENT AND METHOD FOR PRODUCING IMAGING ELEMENT
|
Publication/Patent Number: WO2019171787A1 | Publication Date: 2019-09-12 | Application Number: 2019001598 | Filing Date: 2019-01-21 | Inventor： Shibayama, Toshikazu Mitsunaga, Nobuyuki Moriya, Yusuke | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/369 | Abstract: The present invention reduces reflection of incident light in an imaging element wherein a transparent resin is arranged on the surface of a microlens. An imaging element according to the present invention is provided with a pixel, a microlens, a transparent resin layer and a sealing glass. The pixel is formed on a semiconductor substrate, and produces an image signal that corresponds to the light irradiated thereon. The microlens is arranged adjacent to the pixel, and focuses incident light on the pixel, while planarizing the surface of the pixel. The transparent resin layer is arranged adjacent to the microlens, and is configured to have a refractive index that is different from the refractive index of the microlens by a predetermined value. The sealing glass is arranged adjacent to the transparent resin, and seals the semiconductor substrate. | |||
|
|
5 | KR20160082502A |
SEMICONDUCTOR DEVICE
|
Publication/Patent Number: KR20160082502A | Publication Date: 2016-07-08 | Application Number: 20167006275 | Filing Date: 2014-10-24 | Inventor： Suzuki, Mamoru Kobayashi, Shoji Maruyama, Shunsuke Shibayama, Toshikazu Iwabushi, Shin | Assignee: Sony Corporation | IPC: H01L27/146 | Abstract: 본 개시는 | |||
|
|
6 | US2016211296A1 |
SEMICONDUCTOR DEVICE, SOLID STATE IMAGING ELEMENT, AND ELECTRONIC APPARATUS
|
Publication/Patent Number: US2016211296A1 | Publication Date: 2016-07-21 | Application Number: 15/023,481 | Filing Date: 2014-10-24 | Inventor： Kobayashi, Shoji Iwabuchi, Shin Shibayama, Toshikazu Suzuki, Mamoru Maruyama, Shunsuke | Assignee: SONY CORPORATION | IPC: H01L27/146 | Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example. | |||
|
|
7 | WO2015068589A1 |
SEMICONDUCTOR DEVICE
|
Publication/Patent Number: WO2015068589A1 | Publication Date: 2015-05-14 | Application Number: 2014078307 | Filing Date: 2014-10-24 | Inventor： Suzuki, Mamoru Iwabuchi, Shin Maruyama, Shunsuke Kobayashi, Shoji Shibayama, Toshikazu | Assignee: Sony Corporation | IPC: H01L27/14 | Abstract: The present disclosure pertains to a semiconductor device that makes it possible to minimize adverse effects caused by hot carrier emission |
3.Current Quota