Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
US2021005656A1
IMAGING ELEMENT AND METHOD OF MANUFACTURING IMAGING ELEMENT
Publication/Patent Number: US2021005656A1 Publication Date: 2021-01-07 Application Number: 16/976,749 Filing Date: 2019-01-21 Inventor: Shibayama, Toshikazu   Moriya, Yusuke   Mitsunaga, Nobuyuki   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: To reduce reflection of incident light in an imaging element having a transparent resin arranged on a surface of a microlens. The imaging element includes a pixel, a microlens, a transparent resin layer, and a sealing glass. The pixel is formed on a semiconductor substrate and generates an image signal according to radiated light. The microlens is arranged adjacent to the pixel, collects incident light, irradiates the pixel with the incident light, and flattens a surface of the pixel. The transparent resin layer is arranged adjacent to the microlens and has a refractive index different from a refractive index of the microlens by a predetermined difference. The sealing glass is arranged adjacent to the transparent resin and seals the semiconductor substrate.
2
US10529764B2
Semiconductor device, solid state imaging element, and electronic apparatus
Publication/Patent Number: US10529764B2 Publication Date: 2020-01-07 Application Number: 15/023,481 Filing Date: 2014-10-24 Inventor: Kobayashi, Shoji   Iwabuchi, Shin   Shibayama, Toshikazu   Suzuki, Mamoru   Maruyama, Shunsuke   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example.
3
US2020111830A1
SEMICONDUCTOR DEVICE, SOLID STATE IMAGING ELEMENT, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020111830A1 Publication Date: 2020-04-09 Application Number: 16/709,539 Filing Date: 2019-12-10 Inventor: Kobayashi, Shoji   Iwabuchi, Shin   Shibayama, Toshikazu   Suzuki, Mamoru   Maruyama, Shunsuke   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example.
4
WO2019171787A1
IMAGING ELEMENT AND METHOD FOR PRODUCING IMAGING ELEMENT
Publication/Patent Number: WO2019171787A1 Publication Date: 2019-09-12 Application Number: 2019001598 Filing Date: 2019-01-21 Inventor: Shibayama, Toshikazu   Mitsunaga, Nobuyuki   Moriya, Yusuke   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: The present invention reduces reflection of incident light in an imaging element wherein a transparent resin is arranged on the surface of a microlens. An imaging element according to the present invention is provided with a pixel, a microlens, a transparent resin layer and a sealing glass. The pixel is formed on a semiconductor substrate, and produces an image signal that corresponds to the light irradiated thereon. The microlens is arranged adjacent to the pixel, and focuses incident light on the pixel, while planarizing the surface of the pixel. The transparent resin layer is arranged adjacent to the microlens, and is configured to have a refractive index that is different from the refractive index of the microlens by a predetermined value. The sealing glass is arranged adjacent to the transparent resin, and seals the semiconductor substrate.
5
KR20160082502A
SEMICONDUCTOR DEVICE
Publication/Patent Number: KR20160082502A Publication Date: 2016-07-08 Application Number: 20167006275 Filing Date: 2014-10-24 Inventor: Suzuki, Mamoru   Kobayashi, Shoji   Maruyama, Shunsuke   Shibayama, Toshikazu   Iwabushi, Shin   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: 본 개시는
6
US2016211296A1
SEMICONDUCTOR DEVICE, SOLID STATE IMAGING ELEMENT, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2016211296A1 Publication Date: 2016-07-21 Application Number: 15/023,481 Filing Date: 2014-10-24 Inventor: Kobayashi, Shoji   Iwabuchi, Shin   Shibayama, Toshikazu   Suzuki, Mamoru   Maruyama, Shunsuke   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example.
7
WO2015068589A1
SEMICONDUCTOR DEVICE
Publication/Patent Number: WO2015068589A1 Publication Date: 2015-05-14 Application Number: 2014078307 Filing Date: 2014-10-24 Inventor: Suzuki, Mamoru   Iwabuchi, Shin   Maruyama, Shunsuke   Kobayashi, Shoji   Shibayama, Toshikazu   Assignee: Sony Corporation   IPC: H01L27/14 Abstract:  The present disclosure pertains to a semiconductor device that makes it possible to minimize adverse effects caused by hot carrier emission