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1
US2020185443A1
SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: US2020185443A1 Publication Date: 2020-06-11 Application Number: 16/336,009 Filing Date: 2017-09-28 Inventor: Itabasi, Kouichi   Nishimura, Yuuji   Ishikawa, Mitsuru   Seki, Yuichi   Shimoji masaya   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
2
US10847561B2
Solid-state imaging element and method for manufacturing the same, and electronic device
Publication/Patent Number: US10847561B2 Publication Date: 2020-11-24 Application Number: 16/336,009 Filing Date: 2017-09-28 Inventor: Itabasi, Kouichi   Nishimura, Yuuji   Ishikawa, Mitsuru   Seki, Yuichi   Shimoji masaya   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
3
WO2018070259A1
SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: WO2018070259A1 Publication Date: 2018-04-19 Application Number: 2017035190 Filing Date: 2017-09-28 Inventor: Ishikawa, Mitsuru   Seki, Yuichi   Shimoji masaya   Itabasi, Kouichi   Nishimura, Yuuji   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: The present technology relates to a solid-state imaging element, a method for manufacturing same, and an electronic device, wherein the solid-state imaging element can suppress the occurrence of flares, ghosts, or color mixing, as well as the occurrence of stains caused by moisture. The solid-state imaging element has, on the surface of a microlens, a pixel in which a single-layered anti-reflective film is formed, and a pixel in which a double-layered anti-reflective film is formed. The present technology can be applied, for example, to a backside illumination-type solid-state imaging element.
4
US10008529B2
Solid-state imaging device, method of manufacturing the same, and electronic apparatus
Publication/Patent Number: US10008529B2 Publication Date: 2018-06-26 Application Number: 15/512,131 Filing Date: 2015-09-17 Inventor: Nishi, Takafumi   Ootsuka, Yoichi   Shimoji masaya   Seki, Yuichi   Jinwaki, Toyomi   Ishikawa, Mitsuru   Takita, Yosuke   Chiba, Ryou   Itabasi, Kouichi   Nishimura, Yuuji   Kitano, Yoshiaki   Nakashikiryo, Takashi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
5
US2017278889A1
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2017278889A1 Publication Date: 2017-09-28 Application Number: 15/512,131 Filing Date: 2015-09-17 Inventor: Nakashikiryo, Takashi   Kitano, Yoshiaki   Nishimura, Yuuji   Itabasi, Kouichi   Chiba, Ryou   Takita, Yosuke   Ishikawa, Mitsuru   Jinwaki, Toyomi   Seki, Yuichi   Shimoji masaya   Ootsuka, Yoichi   Nishi, Takafumi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
6
WO2016052220A1
SOLID-STATE IMAGING ELEMENT
Publication/Patent Number: WO2016052220A1 Publication Date: 2016-04-07 Application Number: 2015076414 Filing Date: 2015-09-17 Inventor: Ishikawa, Mitsuru   Seki, Yuichi   Shimoji masaya   Kitano, Yoshiaki   Ootsuka, Yoichi   Nakashikiryo, Takashi   Jinwaki, Toyomi   Nishi, Takafumi   Itabasi, Kouichi   Takita, Yosuke   Chiba, Ryou   Nishimura, Yuuji   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: The present disclosure pertains to a solid-state imaging element
7
US9124822B2
Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
Publication/Patent Number: US9124822B2 Publication Date: 2015-09-01 Application Number: 13/859,873 Filing Date: 2013-04-10 Inventor: Otsuka, Youichi   Ogawa, Kazuaki   Natori, Taichi   Yamamoto, Atsushi   Koshino, Yasunori   Kamiya, Hitomi   Toumiya, Yoshinori   Dofuku, Tadayuki   Hori, Ina   Shoya, Takayuki   Sayama, Yukihiro   Shimoji masaya   Tanaka, Yoshikazu   Assignee: SONY CORPORATION   IPC: H04N5/335 Abstract: Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.
8
TWI464863B
Solid-state image pickup device
Publication/Patent Number: TWI464863B Publication Date: 2014-12-11 Application Number: 99113701 Filing Date: 2010-04-29 Inventor: Shoya, Takayuki   Shimoji masaya   Sayama, Yukihiro   Ogino, Akiko   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion.
9
US8902348B2
Solid-state image capture device
Publication/Patent Number: US8902348B2 Publication Date: 2014-12-02 Application Number: 20/121,371 Filing Date: 2012-12-14 Inventor: Sayama, Yukihiro   Ogino, Akiko   Shoya, Takayuki   Shimoji masaya   Tanaka, Yoshikazu   Assignee: Sony Corporation   Sony_2   IPC: G02B1/11 Abstract: A solid-state image capture device including: at least one photoelectric converter at an image capture surface of a substrate; at least one on-chip lens at the image capture surface of the substrate and above a light-receiving surface of the photoelectric converter; and an antireflection layer on an upper surface of the on-chip lens. The antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin.
10
TWI429065B
Solid-state image capture device
Publication/Patent Number: TWI429065B Publication Date: 2014-03-01 Application Number: 99111477 Filing Date: 2010-04-13 Inventor: Tanaka, Yoshikazu   Shoya, Takayuki   Shimoji masaya   Sayama, Yukihiro   Ogino, Akiko   Assignee: Sony Corporation   IPC: G02B1/11 Abstract: A solid-state image capture device includes: at least one photoelectric converter provided at an image capture surface of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to thereby generate signal charge; at least one on-chip lens provided at the image capture surface of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and an antireflection layer provided on an upper surface of the on-chip lens at the image capture surface of the substrate. The antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low-refractive-index particles having a lower refractive index than the binder resin.
11
US8546262B2
Solid-state image pickup device, method of manufacturing the same and electronic apparatus
Publication/Patent Number: US8546262B2 Publication Date: 2013-10-01 Application Number: 13/523,417 Filing Date: 2012-06-14 Inventor: Ogino, Akiko   Sayama, Yukihiro   Shoya, Takayuki   Shimoji masaya   Assignee: Sony Corporation   IPC: H01L21/311 Abstract: Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion.
12
EP2251715B1
Solid-state image capture device and manufacturing method therefor
Publication/Patent Number: EP2251715B1 Publication Date: 2013-12-11 Application Number: 10004019.5 Filing Date: 2010-04-15 Inventor: Ogino, Akiko   Sayama, Yukihiro   Shoya, Takayuki   Shimoji masaya   Tanaka, Yoshikazu   Assignee: Sony Corporation   IPC: G02B1/11 Abstract: A solid-state image capture device (1) includes: at least one photoelectric converter (21) provided at an image capture surface of a substrate (101) to receive incident light (H) at a light-receiving surface (JS) of the photoelectric converter (21) and photoelectrically convert the incident light (H) to thereby generate signal charge; at least one on-chip lens (111) provided at the image capture surface of the substrate (101) and above the light-receiving surface (JS) of the photoelectric converter (21) to focus the incident light (H) onto the light-receiving surface (JS); and an antireflection layer (112) provided on an upper surface of the on-chip lens (111) at the image capture surface of the substrate (101). The antireflection layer (112) contains a binder resin having a lower refractive index than the on-chip lens (111) and low-refractive-index particles having a lower refractive index than the binder resin.
13
US2013128095A1
SOLID-STATE IMAGE CAPTURE DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2013128095A1 Publication Date: 2013-05-23 Application Number: 13/715,384 Filing Date: 2012-12-14 Inventor: Ogino, Akiko   Sayama, Yukihiro   Shoya, Takayuki   Shimoji masaya   Tanaka, Yoshikazu   Assignee: SONY CORPORATION   IPC: H04N5/225 Abstract: A solid-state image capture device including: at least one photoelectric converter at an image capture surface of a substrate; at least one on-chip lens at the image capture surface of the substrate and above a light-receiving surface of the photoelectric converter; and an antireflection layer on an upper surface of the on-chip lens. The antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin.
14
EP2662710A1
Solid-state image capture device and manufacturing method therefor
Publication/Patent Number: EP2662710A1 Publication Date: 2013-11-13 Application Number: 13003981.1 Filing Date: 2010-04-15 Inventor: Ogino, Akiko   Sayama, Yukihiro   Shoya, Takayuki   Shimoji masaya   Tanaka, Yoshikazu   Assignee: Sony Corporation   IPC: G02B1/11 Abstract: A solid-state image capture device (1) includes: at least one photoelectric converter (21) provided at an image capture surface (PS) of a substrate (101) to receive incident light at a light-receiving surface (JS) of the photoelectric converter (21) and photoelectrically convert the incident light to thereby generate signal charge; at least one on-chip lens (111) provided at the image capture surface (PS) of the substrate (101) and above the light-receiving surface (JS) of the photoelectric converter (21) to focus the incident light onto the light-receiving surface (JS); a color filter provided between the on-chip lens (111) and the light- receiving surface (JS) of the photoelectric converter (21). In a solid-state image capture device (1) the at least one on-chip lens (111) contains a binder resin (111R) and low-refractive-index particles (111P) having a lower refractive index than the binder resin (111R), the multiple on-chip lenses (111) are formed to be integrated with each other and form a gapless layer of lens material covering the color filter (301), wherein the multiple on-chip lenses are convex lenses each having a center being thicker than its edge in a direction of incident light (H). In an embodiment the solid-state image capture device further comprises: a first antireflection layer (1121) provided on the upper surfaces of the on-chip lenses (111) and a second antireflection layer (1122) provided above the first antireflection layer (1121); wherein each of the first antireflection layer (1121) and the second antireflection layer (1122) has the low-refractive-index particles (112P) and the binder resin (112R); and the second antireflection layer (1122) contains more low-refractive-index particles (112P) than the first antireflection layer (1121).
15
US8355072B2
Solid-state image capture device, manufacturing method therefor, and electronic apparatus
Publication/Patent Number: US8355072B2 Publication Date: 2013-01-15 Application Number: 12/765,455 Filing Date: 2010-04-22 Inventor: Ogino, Akiko   Sayama, Yukihiro   Shoya, Takayuki   Shimoji masaya   Tanaka, Yoshikazu   Assignee: Sony Corporation   IPC: H04N5/225 Abstract: A solid-state image capture device includes: at least one photoelectric converter provided at an image capture surface of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to thereby generate signal charge; at least one on-chip lens provided at the image capture surface of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and an antireflection layer provided on an upper surface of the on-chip lens at the image capture surface of the substrate. The antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low-refractive-index particles having a lower refractive index than the binder resin.
16
US8432010B2
Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
Publication/Patent Number: US8432010B2 Publication Date: 2013-04-30 Application Number: 12/769,799 Filing Date: 2010-04-29 Inventor: Otsuka, Youichi   Ogawa, Kazuaki   Natori, Taichi   Yamamoto, Atsushi   Koshino, Yasunori   Kamiya, Hitomi   Toumiya, Yoshinori   Dofuku, Tadayuki   Hori, Ina   Shoya, Takayuki   Sayama, Yukihiro   Shimoji masaya   Tanaka, Yoshikazu   Assignee: Sony Corporation   IPC: H01L31/14 Abstract: Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.
17
US2013235230A1
SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS
Publication/Patent Number: US2013235230A1 Publication Date: 2013-09-12 Application Number: 13/859,873 Filing Date: 2013-04-10 Inventor: Otsuka, Youichi   Ogawa, Kazuaki   Natori, Taichi   Yamamoto, Atsushi   Koshino, Yasunori   Kamiya, Hitomi   Toumiya, Yoshinori   Dofuku, Tadayuki   Hori, Ina   Shoya, Takayuki   Sayama, Yukihiro   Shimoji masaya   Tanaka, Yoshikazu   Assignee: Sony Corporation   IPC: H04N5/335 Abstract: Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.
18
US2012258563A1
SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS
Publication/Patent Number: US2012258563A1 Publication Date: 2012-10-11 Application Number: 13/523,417 Filing Date: 2012-06-14 Inventor: Ogino, Akiko   Sayama, Yukihiro   Shoya, Takayuki   Shimoji masaya   Assignee: SONY CORPORATION   IPC: H01L31/18 Abstract: Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion.
19
US8222705B2
Solid-state image pickup device, method of manufacturing the same and electronic apparatus
Publication/Patent Number: US8222705B2 Publication Date: 2012-07-17 Application Number: 12/775,830 Filing Date: 2010-05-07 Inventor: Ogino, Akiko   Sayama, Yukihiro   Shoya, Takayuki   Shimoji masaya   Assignee: Sony Corporation   IPC: H01L29/76 Abstract: Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion.
20
TW201104848A
Solid-state image pickup device
Publication/Patent Number: TW201104848A Publication Date: 2011-02-01 Application Number: 99113701 Filing Date: 2010-04-29 Inventor: Shoya, Takayuki   Shimoji masaya   Sayama, Yukihiro   Ogino, Akiko   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion.